IXFX32N50Q - Zilog - Datasheet.Live

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 500 V

VDGR TJ= 25°C to 150°C; RGS = 1 MΩ 500 V

VGS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C 32 A

IDM TC= 25°C, 120 A

pulse width limited by TJM

IAR TC= 25°C 32 A

EAR TC= 25°C 45 mJ

EAS 1500 m J

dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns

TJ ≤ 150°C, RG = 2 Ω

PDTC= 25°C 416 W

TJ-55 ... + 150 °C

TJM 150 °C

Tstg -55 ... + 150 °C

TL1.6 mm (0.063 in) from case for 10 s 300 °C

MdMounting torque 1.13/10 Nm/lb.in.

Weight TO-247 6 g

TO-268 4 g

N-Channel Enhancement Mode

Avalanche Rated, Low Qg,

High dv/dt

Features

zIXYS advanced low Qg process

zLow gate charge and capacitances

- easier to drive

- faster switching

zInternational standard packages

zLow RDS (on)

zUnclamped Inductive Switching (UIS)

rated

zMolding epoxies meet UL 94 V-0

flammability classification

Advantages

zPLUS 247TM package for clip or spring

mounting

zSpace savings

zHigh power density

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

VDSS VGS = 0 V, ID = 250 uA 500 V

VGS(th) VDS = VGS, ID = 4 mA 2.5 4.5 V

IGSS VGS = ±20 VDC, VDS = 0 ±100 nA

IDSS VDS = VDSS TJ = 25°C 100 µA

VGS = 0 V TJ = 125°C1mA

RDS(on) VGS = 10 V, ID = 0.5 ID25 0.16 Ω

Note 1

HiPerFETTM

Power MOSFETs

Q-Class

PLUS 247TM

(IXFX)

GD

(TAB)

G = Gate D = Drain

S = Source TAB = Drain

S

G

D(TAB)

TO-264 AA (IXFK)

DS98604E(01/04)

VDSS ID25 RDS(on)

500 V 32 A 0.16 ΩΩ

ΩΩ

Ω

500 V 32 A 0.16 ΩΩ

ΩΩ

Ω

trr ≤ ≤

≤ ≤

≤ 250 ns

IXFK 32N50Q

IXFX 32N50Q

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505

Symbol Test Conditions Characteristic Values

(TJ = 25°C, unless otherwise specified)

min. typ. max.

gfs VDS = 10 V; ID = 0.5 • ID25 Note 1 18 28 S

Ciss 3950 pF

Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 640 pF

Crss 210 pF

td(on) 35 ns

trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 42 ns

td(off) RG = 2 Ω (External), 75 ns

tf20 ns

Qg(on) 150 nC

Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 26 nC

Qgd 85 nC

RthJC 0.3 K/W

RthCK 0.15 K/W

Source-Drain Diode Characteristic Values

(TJ = 25°C, unless otherwise specified)

Symbol Test Conditions min. typ. max.

ISVGS = 0 V 32 A

ISM Repetitive; 128 A

pulse width limited by TJM

VSD IF = IS, VGS = 0 V, Note 1 1.5 V

trr 250 ns

QRM 0.75 µC

IRM 7.5 A

IF = 25A, -di/dt = 100 A/µs, VR = 100 V

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 247TM Outline

Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

IXFK 32N50Q

IXFX 32N50Q

TO-264 AA Outline

Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

Dim.

TC - Degrees C

-50 -25 0 25 50 75 100 125 150

ID - Amperes

0

8

16

24

32

40

VGS - Volts

23456

ID - Amperes

0

10

20

30

40

50

TJ - Degrees C

25 50 75 100 125 150

RDS(ON) - Normalized

0.8

1.2

1.6

2.0

2.4

2.8

ID = 16A

VDS - Volts

0 4 8 12 16 20

ID - Amperes

0

10

20

30

40

50

VDS - Volts

048121620

ID - Amperes

0

10

20

30

40

50

60

70

80

5V

TJ = 125OC

VGS = 10V

TJ = 25OC

TJ = 125oC

6V

5V

6V

VGS=10V

9V

8V

7V

VGS= 9V

8V

7V

ID = 32A

TJ = 25oC

ID - Amperes

0 102030405060

RDS(ON) - Normalized

0.8

1.2

1.6

2.0

2.4

2.8

Tj=1250 C

Tj=250 C

VGS = 10V

4V

Figure 3. RDS(on) normalized to 15A/25OC vs. ID

Figure 5. Drain Current vs. Case Temperature Figure 6. Admittance Curves

Figure 1. Output Characteristics at 25OCFigure 2. Output Characteristics at 125OC

Figure 4. RDS(on) normalized to 15A/25OC vs. TJ

IXFK 32N50Q

IXFX 32N50Q

IXYS reserves the right to change limits, test conditions, and dimensions.

IXYS MOSFETs and IGBTs are covered by one or more

of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505

Pulse Width - Seconds

10-3 10-2 10-1 100101

R(th)JC - K/W

0.02

0.04

0.06

0.08

0.20

0.40

0.01

0.10

VDS - Volts

0 5 10 15 20 25

Capacitance - pF

100

1000

10000

VSD - Volts

0.4 0.6 0.8 1.0 1.2

ID - Amperes

0

20

40

60

80

100

TJ=125OC

TJ=25OC

Gate Charge - nC

0 50 100 150 200 250

VGS - Volts

0

2

4

6

8

10

12

14

F = 1MHz

VGS= 0V

TJ=25OC

Vds=300V

ID=16A

IG=10mA

F = 1MHz

Ciss

Coss

Crss

Figure 7. Gate Charge Figure 8. Capacitance Curves

Figure 9. Forward Voltage Drop of the

Intrinsic Diode

Figure 10. Transient Thermal Resistance

IXFK 32N50Q

IXFX 32N50Q