© 2007 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 1.0 A
IDM TC= 25°C, pulse width limited by TJM 1.8 A
IATC= 25°C 1.0 A
EAR TC= 25°C10mJ
EAS TC= 25°C 100 mJ
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C63W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.50 g
TO-220 3.00 g
DS99870 (08/07)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1200 V
VGS(th) VDS = VGS, ID = 50μA 2.5 4.5 V
IGSS VGS = ±20V, VDS = 0V ±50 nA
IDSS VDS = VDSS 5 μA
VGS = 0V TJ = 125°C 200 μA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 15.5 20 Ω
Polar VHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA1N120P
IXTP1N120P
VDSS = 1200V
ID25 = 1.0A
RDS(on) ≤≤
≤≤
≤ 20ΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source TAB = Drain
Features
zInternational standard packages
zUnclamped Inductive Switching
(UIS) rated
zLow package inductance
- easy to drive and to protect
Advantages
zEasy to mount
zSpace savings
zHigh power density
TO-263 (IXTA)
TO-220 (IXTP)
D(TAB)
G
S
GS
(TAB)
Applications:
zSwitched-mode and resonant-mode
power supplies
zDC-DC Converters
zLaser Drivers
zAC and DC motor controls
zRobotics and servo controls
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA1N120P
IXTP1N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS= 30V, ID = 0.5 • ID25, Note 1 0.55 0.92 S
Ciss 550 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 25 pF
Crss 5.4 pF
td(on) Resistive Switching Times 20 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 28 ns
td(off) RG = 30Ω (External) 54 ns
tf 27 ns
Qg(on) 17.6 nC
Qgs VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 3.5 nC
Qgd 10.6 nC
RthJC 2.0 °C/W
RthCS (TO-220) 0.5 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 1.0 A
ISM Repetitive 3.0 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr IF = 1.0A, -di/dt = 100A/μs, 900 ns
VR = 100V, VGS = 0V
Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Pins: 1 - Gate 2 - Drain
TO-220 (IXTP) Outline
TO-263 (IXTA) Outline
© 2007 IXYS CORPORATION, All rights reserved
IXTA1N120P
IXTP1N120P
Fi g . 1. Ou tp u t C h ar acter i sti cs @ 25ºC
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0 5 10 15 20 25 30 35
V
DS
- Vo lts
I
D
- A m p ere s
V
GS
= 10V
7V
6V
5V
Fi g . 2. Output Ch ar acter i sti cs @ 125ºC
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0 5 10 15 20 25 30 35 40
V
DS
- Vo lts
I
D
- A m p ere s
V
GS
= 10V
6V
5V
Fig. 3. R
DS(on)
Normalized to I
D
= 0.5A Value
vs. Junction Temperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrad e
R
DS(on)
- N orma liz ed
V
GS
= 10V
I
D
= 1A
I
D
= 0. 5A
Fig. 4. R
DS(on)
Normalized to I
D
= 0.5A Valu e
vs. D r ai n C u r r en t
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
0 0.2 0.4 0.6 0.8 1 1.2 1.4
I
D
- Amperes
R
DS(on)
- N orma liz ed
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 6. I nput Admittan ce
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 4.8 5 5.2 5.4 5.6 5.8
V
GS
- Volt s
I
D
- Am peres
T
J
= 125ºC
25ºC
-40ºC
Fi g . 5. Maxi mu m Dr ai n C u r r en t vs.
Case Temper atu r e
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Cen tigrad e
I
D
- A mp e res
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA1N120P
IXTP1N120P
IXYS REF: T_1N120P(2A-245)10-27-06
Fig. 7. Transconductance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
ID - A mperes
g
f s
- Siemen s
T
J
= - 40ºC
25ºC
125ºC
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VSD - Vol ts
IS - A mp ere s
T
J
= 125ºC
T
J
= 25ºC
Fig. 9. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
024681012141618
QG - NanoCoulom bs
VGS - V o lt s
V
DS
= 600V
I
D
= 0. 5A
I
G
= 10mA
Fig. 10. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
VDS - Vol ts
Capacitance - P icoFa rads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 11 . Maximu m Tr a n sient Thermal I mp e d an ce
0.0
0.1
1.0
10.0
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
