www.ti.com
FEATURES
Operational Amplifier
+
−
−10
0
10
20
30
40
50
60
70
80
90
100
110
120
f − Frequency − Hz
10 1k 10M10k 100k100 1M
150
120
90
60
30
0
−30
−60
−90
Phase Margin − °
DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE
vs
FREQUENCY
− Differential Voltage Amplification − dBAVD
Gain
Phase
180
VDD = 2.7 V and 5 V
RL= 2 kΩ
CL = 10 pF
TA = 25° C
DESCRIPTION
TLV2620, TLV2621TLV2622, TLV2623TLV2624, TLV2625
SLOS251D – DECEMBER 2000 – REVISED JANUARY 2005
FAMILY OF LOW-POWER WIDE BANDWIDTH SINGLE SUPPLYOPERATIONAL AMPLIFIERS WITH SHUTDOWN
•CMOS Rail-To-Rail Output•V
ICR
Includes Positive Rail•Wide Bandwidth . . . 11 MHz•Slew Rate . . . 10 V/µs•Supply Current . . . 800 µA/Channel•Input Noise Voltage . . . 27 nV/ √Hz•Ultralow Power-Down Mode:I
DD(SHDN
) = 4 µA/Channel•Supply Voltage Range . . . 2.7 V to 5.5 V•Specified Temperature Range:-40 °C to 125 °C . . . Industrial Grade•Ultrasmall Packaging:
5 or 6 Pin SOT-23 (TLV2620/1)8 or 10 Pin MSOP (TLV2622/3)•Universal Opamp EVM (See SLOU060 for MoreInformation)
The TLV262x single supply operational amplifiers provide rail-to-rail output with an input range that includes thepositive rail. The TLV262x takes the minimum operating supply voltage down to 2.7 V over the extendedindustrial temperature range (-40 °C to 125 °C) while adding the rail-to-rail output swing feature. The TLV262xalso provides 11-MHz bandwidth from only 800 µA of supply current. The maximum recommended supplyvoltage is 5.5 V, which, when coupled with a 2.7-V minimum, allows the devices to be operated from lithium ioncells. The combination of wide bandwidth, low noise, and low distortion makes it ideal for high speed and highresolution data converter applications. The positive input range allows it to directly interface to positive railreferred systems. All members are available in PDIP and SOIC with the singles in the small SOT-23 package,duals in the MSOP, and quads in the TSSOP package.
The 2.7-V operation makes it compatible with Li-Ion powered systems and the operating supply voltage range ofmany micro-power micro-controllers available today including TI's MSP430.
AMPLIFIER SELECTION TABLE
V
DD
I
DD
/ch V
IO
I
IB
V
ICR
GBW SLEW RATE V
n,
1 kHz I
O
SHUT-DEVICE
[V] [µA] [µV] [pA] [V] [MHz] [V/µs] [nV/ √Hz] [mA] DOWN
TLV262x 2.7-5.5 750 250 1 1 V to V
DD
+ 0.2 11 10 27 28 YTLV263x 2.7-5.5 750 250 1 GND to V
DD
- 0.8 10 9 27 28 YTLV278x 1.8-3.6 650 250 2.5 -0.2 to V
DD
+ 0.2 8 5 9 10 YTLC07x 4.5 - 16 1900 60 1.5 0.5 to V
DD
- 0.8 10 19 7 55 YTLC08x 4.5 - 16 1900 60 3 GND to V
DD
- 1 10 19 8.5 55 Y
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of TexasInstruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PRODUCTION DATA information is current as of publication date.
Copyright © 2000–2005, Texas Instruments IncorporatedProducts conform to specifications per the terms of the TexasInstruments standard warranty. Production processing does notnecessarily include testing of all parameters.
www.ti.com
TLV2620, TLV2621TLV2622, TLV2623TLV2624, TLV2625
SLOS251D – DECEMBER 2000 – REVISED JANUARY 2005
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integratedcircuits be handled with appropriate precautions. Failure to observe proper handling and installationprocedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precisionintegrated circuits may be more susceptible to damage because very small parametric changes couldcause the device not to meet its published specifications.
TLV2620 AND TLV2621 AVAILABLE OPTIONS
(1)
PACKAGED DEVICESV
IO
max ATT
A
SOT-23SMALL OUTLINE25 °C
PLASTIC DIP (P)(D)
(2)
(DBV)
(3)
SYMBOL
TLV2620ID TLV2620IDBV VBAI TLV2620IP-40 °C to 125 °C 3500 µV
TLV2621ID TLV2621IDBV VBBI TLV2621IP
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com .(2) This package is available taped and reeled. To order this packaging option, add an Rsuffix to the part number (e.g., TLV2620IDR).(3) The SOT23 package devices are only available taped and reeled. The RSuffix denotes quantities (3,000 pieces per reel). For smallerquantities (250 pieces per mini-reel), add a Tsuffix to the part number (e.g. TLV2620IDBVT).
TLV2622 AND TLV2623 AVAILABLE OPTIONS
(1)
PACKAGED DEVICESV
IO
max AT
SMALL MSOP PLASTICT
A
PLASTIC25 °C
OUTLINE
(2)
DIPDIP (N)(DGK)
(2)
SYMBOL (DGS)
(2)
SYMBOL(D) (P)
TLV2622ID TLV2622IDGK xxTIAKM — — — TLV2622IP-40 °C to 125 °C 3500 µV
TLV2623ID — — TLV2623IDGS xxTIALC TLV2623IN —
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TIwebsite at www.ti.com .(2) This package is available taped and reeled. To order this packaging option, add an Rsuffix to the part number (e.g., TLV2622IDR).
TLV2624 AND TLV2625 AVAILABLE OPTIONS
(1)
PACKAGED DEVICESV
IO
maxT
A
SMALL OUTLINE PLASTIC DIP TSSOPAT 25 °C
(D)
(2)
(N) (PW)
TLV2624ID TLV2624IN TLV2624IPW-40 °C to 125 °C 3500 µV
TLV2625ID TLV2625IN TLV2625IPW
(1) For the most current package and ordering information, see the Package Option Addendum at theend of this document, or see the TI website at www.ti.com .(2) This package is available taped and reeled. To order this packaging option, add an Rsuffix to thepart number (e.g., TLV2624IDR).
2
www.ti.com
TLV262X PACKAGE PINOUTS
(1)
3
2
4
5
(TOP VIEW)
1
OUT
GND
IN+
VDD
IN−
TLV2621
DBV PACKAGE
1
2
3
4
5
10
9
8
7
6
1OUT
1IN−
1IN+
GND
1SHDN
VDD
2OUT
2IN−
2IN+
2SHDN
3
2
4
6
(TOP VIEW)
1
OUT
GND
IN+
VDD
IN−
TLV2620
DBV PACKAGE
5SHDN
TLV2623
DGS PACKAGE
(TOP VIEW)
NC − No internal connection
1
2
3
4
8
7
6
5
NC
IN−
IN+
GND
SHDN
VDD
OUT
NC
TLV2620
D OR P PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
NC
IN−
IN+
GND
NC
VDD
OUT
NC
TLV2621
D OR P PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN−
1IN+
GND
NC
1SHDN
NC
VDD
2OUT
2IN−
2IN+
NC
2SHDN
NC
(TOP VIEW)
TLV2623
D OR N PACKAGE
1
2
3
4
5
6
7
14
13
12
11
10
9
8
1OUT
1IN−
1IN+
VDD
2IN+
2IN−
2OUT
4OUT
4IN−
4IN+
GND
3IN+
3IN−
3OUT
(TOP VIEW)
TLV2624
D, N, OR PW PACKAGE
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1OUT
1IN−
1IN+
VDD
2IN+
2IN−
2OUT
1/2SHDN
4OUT
4IN−
4IN+
GND
3IN+
3IN−
3OUT
3/4SHDN
(TOP VIEW)
TLV2625
D, N, OR PW PACKAGE
1
2
3
4
8
7
6
5
1OUT
1IN−
1IN+
GND
VDD
2OUT
2IN−
2IN+
TLV2622
D, DGK, OR P PACKAGE
(TOP VIEW)
1/2SHDN Pin (8) controls amplifiers 1 and 2.
3/4SHDN Pin (9) controls amplifiers 3 and 4.
Printed or
Molded Dot Bevel Edges
Pin 1
Molded ”U” Shape
Pin 1
Stripe Pin 1 Pin 1
TLV2620, TLV2621TLV2622, TLV2623TLV2624, TLV2625
SLOS251D – DECEMBER 2000 – REVISED JANUARY 2005
(1) SOT-23 may or may not be indicated.
TYPICAL PIN 1 INDICATORS
NOTE:
If there is not a Pin 1 indicator, turn device to enable reading the symbol from left toright. Pin 1 is at the lower left corner of the device.
3
www.ti.com
ABSOLUTE MAXIMUM RATINGS
DISSIPATION RATING TABLE
RECOMMENDED OPERATING CONDITIONS
TLV2620, TLV2621TLV2622, TLV2623TLV2624, TLV2625
SLOS251D – DECEMBER 2000 – REVISED JANUARY 2005
over operating free-air temperature range (unless otherwise noted)
(1)
V
DD
Supply voltage
(2)
6 VV
ID
Differential input voltage ±V
DD
V
I
Input voltage range
(2)
+1 to V
DD
+ 0.2 VI
I
Input current (any input) ±10 mAI
O
Output current ±40 mAContinuous total power dissipation See Dissipation Rating TableT
A
Operating free-air temperature range: I-suffix -40 °C to 125 °CT
J
Maximum junction temperature 150 °CT
stg
Storage temperature range -65 °C to 150 °CLead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 °C
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functional operation of the device at these or any other conditions beyond those indicated under recommended operatingconditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.(2) All voltage values, except differential voltages, are with respect to GND.
θ
JC
θ
JA
T
A
≤25 °C T
A
= 125 °CPACKAGE
(°C/W) ( °C/W)
POWER RATING POWER RATING
D (8) 38.3 176 710 mW 142 mWD (14) 26.9 122.3 1022 mW 204.4 mWD (16) 25.7 114.7 1090 mW 218 mWDBV (5) 55 324.1 385 mW 77.1 mWDBV (6) 55 294.3 425 mW 85 mWDGK (8) 54.2 259.9 481 mW 96.1 mWDGS (10) 54.1 259.7 485 mW 97 mWN (14, 16) 32 78 1600 mW 320.5 mWP (8) 41 104 1200 mW 240.4 mWPW (14) 29.3 173.6 720 mW 144 mWPW (16) 28.7 161.4 774 mW 154.9 mW
MIN MAX UNIT
Single supply 2.7 5.5V
DD
Supply voltage VSplit supply ±1.35 ±2.75V
ICR
Common-mode input voltage range 1 V
DD
+0.2 VT
A
Operating free-air temperature I-suffix -40 125 °CV
IL
0.4Shutdown on/off voltage level
(1)
VV
IH
2
(1) Relative to GND.
4
www.ti.com
ELECTRICAL CHARACTERISTICS
TLV2620, TLV2621TLV2622, TLV2623TLV2624, TLV2625
SLOS251D – DECEMBER 2000 – REVISED JANUARY 2005
at specified free-air temperature, V
DD
= 2.7 V, 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS T
A
(1)
MIN TYP MAX UNIT
DC PERFORMANCE
25 °C 250 3500V
IO
Input offset voltage µVV
IC
= V
DD
/2, V
O
= V
DD
/2, Full range 4500R
S
= 50 ΩTemperature coefficient ofα
VIO
25 °C 3 µV/ °Cinput offset voltage
25 °C 77 98V
DD
= 2.7 V
Full range 63V
IC
= 1 to V
DD
,CMRR Common-mode rejection ratio dBR
S
= 50 Ω
25 °C 78 99V
DD
= 5 V
Full range 7525 °C 90 100V
DD
= 2.7 V, R
L
= 2 k Ω,V
O(PP)
= 1.7 V
Full range 82Large-signal differential voltageA
VD
dBamplification
25 °C 95 100V
DD
= 5 V, R
L
= 2 k Ω,V
O(PP)
= 4 V
Full range 90
INPUT CHARACTERISTICS
25 °C 2 50I
IO
Input offset current
Full Range 100V
IC
= V
DD
/2, V
O
= V
DD
/2,
pAR
S
= 50 Ω
25 °C 2 50I
IB
Input bias current
Full Range 200r
i(d)
Differential input resistance 25 °C 100 G ΩCommon-mode inputC
i(c)
f = 1 kHz 25 °C 8 pFcapacitance
OUTPUT CHARACTERISTICS
25 °C 2.6 2.67V
DD
= 2.7 V
Full range 2.55V
IC
= V
DD
/2,I
OH
= -1 mA
25 °C 4.95 4.98V
DD
= 5 V
Full range 4.9V
OH
High-level output voltage V25 °C 2.3 2.43V
DD
= 2.7 V
Full range 2.2V
IC
= V
DD
/2,I
OH
= -10 mA
25 °C 4.7 4.8V
DD
= 5 V
Full range 4.625 °C 0.03 0.1V
DD
= 2.7 V
Full range 0.15V
IC
= V
DD
/2,I
OL
= 1 mA
25 °C 0.025 0.05V
DD
= 5 V
Full range 0.1V
OL
Low-level output voltage V25 °C 0.26 0.4V
DD
= 2.7 V
Full range 0.45V
IC
= V
DD
/2,I
OL
= 10 mA
25 °C 0.2 0.25V
DD
= 5 V
Full range 0.35Sourcing 14V
DD
= 2.7 V,V
O
= 0.5 V from rail
Sinking 19I
O
Output current 25 °C mASourcing 28V
DD
= 5 V,V
O
= 0.5 V from rail
Sinking 28V
DD
= 2.7 V 50Sourcing
V
DD
= 5 V 95I
OS
Short-circuit output current 25 °C mAV
DD
= 2.7 V 50Sinking
V
DD
= 5 V 95
(1) Full range is -40 °C to 125 °C for the I-suffix.
5
www.ti.com
TLV2620, TLV2621TLV2622, TLV2623TLV2624, TLV2625
SLOS251D – DECEMBER 2000 – REVISED JANUARY 2005
ELECTRICAL CHARACTERISTICS (continued)at specified free-air temperature, V
DD
= 2.7 V, 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS T
A
(1)
MIN TYP MAX UNIT
POWER SUPPLY
25 °C 800 1000I
DD
Supply current (per channel) V
O
= V
DD
/2, SHDN = V
DD
µAFull range 130025 °C 80 98V
DD
= 2.7 V to 3.3 V,V
IC
= V
DD
/2
Full range 75Supply voltage rejection ratioPSRR No load dB(∆V
DD
/∆V
IO
)
25 °C 75 90V
DD
= 2.7 V to 5 V,V
IC
= V
DD
/2
Full range 70
DYNAMIC PERFORMANCE
UGBW Unity gain bandwidth R
L
= 2 k Ω, C
L
= 10 pF 25 °C 11 MHz25 °C 3.5 4.5V
DD
= 2.7 V,V
O(PP)
= 1.7 V
Full range 2.7SR+ Positive slew rate at unity gain R
L
= 2 k Ω, C
L
= 50 pF V/µs25 °C 5.4 7V
DD
= 5 V,V
O(PP)
= 3.5 V
Full range 3.425 °C 2.7 5V
DD
= 2.7 V,V
O(PP)
= 1.7 V
Full range 2.3SR- Negative slew rate at unity gain R
L
= 2 k Ω, C
L
= 50 pF V/µs25 °C 4.5 6V
DD
= 5 V,V
O(PP)
= 3.5 V
Full range 3.2φ
m
Phase margin 63 °R
L
= 2 k Ω, C
L
= 10 pF 25 °CGain margin 8 dB
NOISE/DISTORTION PERFORMANCE
A
V
= 1 0.002%Total harmonic distortion plus V
O(PP)
= V
DD
/2,THD + N A
V
= 10 0.019%noise R
L
= 2 k Ω, f = 10 kHz
A
V
= 100 0.095%25 °Cf = 1 kHz 53V
n
Equivalent input noise voltage nV/ √Hzf = 10 kHz 27I
n
Equivalent input noise current f = 1 kHz 0.9 fA/ √Hz
SHUTDOWN CHARACTERISTICS
Supply current, per channel in 25 °C 4 11I
DD(SHDN)
shutdown mode (TLV2620, SHDN = 0.4 V µAFull range 13TLV2623, TLV2625)
V
DD
= 2.7 V 4.5t
(on)
Amplifier turnon time
(2)
R
L
= 2 k ΩµsV
DD
= 5 V 25 °C 1.5t
(off)
Amplifier turnoff time
(2)
R
L
= 2 k Ω200 ns
(2) Disable time and enable time are defined as the interval between application of the logic signal to SHDN and the point at which thesupply current has reached half its final value.
6
www.ti.com
TYPICAL CHARACTERISTICS
TABLE OF GRAPHS
0
10
20
30
40
50
60
70
80
90
100
110
120 VDD = 2.7 V and 5 V
TA = 25° C
f − Frequency − Hz
CMRR − Common-Mode Rejection Ratio − dB
10 1k 1M10k 100k100
−100
−50
0
50
100
150
200
250
300
350
400
450
500
0.0 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
VDD = 2.7 V
TA = 25° C
IO
VInput Offset Voltage −− Vµ
VICR − Common-Mode Input Voltage − V
−100
−50
0
50
100
150
200
250
300
350
400
450
500
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDD = 5 V
TA = 25° C
IO
VInput Offset Voltage −− Vµ
VICR − Common-Mode Input Voltage − V
TLV2620, TLV2621TLV2622, TLV2623TLV2624, TLV2625
SLOS251D – DECEMBER 2000 – REVISED JANUARY 2005
FIGURE
V
IO
Input offset voltage vs Common-mode input voltage 1, 2CMRR Common-mode rejection ratio vs Frequency 3V
OH
High-level output voltage vs High-level output current 4, 6V
OL
Low-level output voltage vs Low-level output current 5, 7I
DD
Supply current vs Supply voltage 8I
DD
Supply current vs Free-air temperature 9PSRR Power supply rejection ratio vs Frequency 10A
VD
Differential voltage amplification & phase vs Frequency 11Gain-bandwidth product vs Free-air temperature 12vs Supply voltage 13SR Slew rate
vs Free-air temperature 14, 15φ
m
Phase margin vs Load capacitance 16V
n
Equivalent input noise voltage vs Frequency 17Voltage-follower large-signal pulse response 18Voltage-follower small-signal pulse response 19Crosstalk vs Frequency 20I
DD(SHDN)
Shutdown supply current vs Free-air temperature 21I
DD(SHDN)
Shutdown supply current vs Supply voltage 22I
DD(SHDN)
Shutdown supply current/output voltage vs Time 23
INPUT OFFSET VOLTAGE INPUT OFFSET VOLTAGE COMMON-MODE REJECTION RATIOvs vs vsCOMMON-MODE INPUT VOLTAGE COMMON-MODE INPUT VOLTAGE FREQUENCY
Figure 1. Figure 2. Figure 3.
7
www.ti.com
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0 5 10 15 20 25 30 35 40 45
VDD = 2.7 V
TA = 25°C
TA = 0°C
TA = −40°C
TA = 125°C
TA = 70°C
IOL − Low-Level Output Current − mA
OL
V− Low-Level Output Voltage − V
0.0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
0 5 10 15 20 25 30 35 40 45
VDD = 2.7 V
VOH − High-Level Output Voltage − V
IOH − High-Level Output Current − mA
TA = 25°C
TA = 0°C
TA = −40°C
TA = 125°C
TA = 70°C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 10 20 30 40 50 60 70 80 90 100
VDD = 5 V
IOL − Low-Level Output Current − mA
OL
V− Low-Level Output Voltage − V
TA = 125°C
TA = 70°C
TA = 25°C
TA = 0°C
TA = −40°C
0
100
200
300
400
500
600
700
800
900
1000
−40−25−10 5 20 35 50 65 80 95 110 125
AV= 1
VIC = VDD/2
TA − Free-Air Temperature − °C
VDD = 5 V
VDD = 2.7 V
DD
ISupply Current − − A/chµ
0
100
200
300
400
500
600
700
800
900
1000
1100
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
AV= 1
VIC = VDD/2
VDD − Supply Voltage − V
DD
ISupply Current − − A/chµ
TA = −40°C
TA = 0°C
TA = 125°C
TA = 70°C
TA = 25°C
0 1 2 3 4 5 6
−10
0
10
20
30
40
50
60
70
80
90
100
110
120
f − Frequency − Hz
10 1k 10M10k 100k100 1M
150
120
90
60
30
0
−30
−60
−90
Phase Margin − °
− Differential Voltage Amplification − dBAVD
Gain
Phase
180
VDD = 2.7 V and 5 V
RL= 2 kΩ
CL = 10 pF
TA = 25° C
0
10
20
30
40
50
60
70
80
90
100 VDD = 2.7 V and 5 V
TA = 25° C
f − Frequency − Hz
10 1k 10M10k 100k100
− Power Supply Rejection Ratio − dBPSRR
PSSR
+
PSSR−
1M
0
1
2
3
4
5
6
7
8
9
10
11
12
−40−25−10 5 20 35 50 65 80 95 110 125
TA − Free-Air Temperature − °C
Gain-Bandwidth Product − MHz
VDD = 5 V
VDD = 2.7 V
RL = 2 kΩ
CL = 10 pF
f = 10 kHz
TLV2620, TLV2621TLV2622, TLV2623TLV2624, TLV2625
SLOS251D – DECEMBER 2000 – REVISED JANUARY 2005
HIGH-LEVEL OUTPUT VOLTAGE LOW-LEVEL OUTPUT VOLTAGE HIGH-LEVEL OUTPUT VOLTAGEvs vs vsHIGH-LEVEL OUTPUT CURRENT LOW-LEVEL OUTPUT CURRENT HIGH-LEVEL OUTPUT CURRENT
Figure 4. Figure 5. Figure 6.
LOW-LEVEL OUTPUT VOLTAGE SUPPLY CURRENT SUPPLY CURRENTvs vs vsLOW-LEVEL OUTPUT CURRENT SUPPLY VOLTAGE FREE-AIR TEMPERATURE
Figure 7. Figure 8. Figure 9.
DIFFERENTIAL VOLTAGEPOWER SUPPLY REJECTION RATIO AMPLIFICATION AND PHASE GAIN-BANDWIDTH PRODUCTvs vs vsFREQUENCY FREQUENCY FREE-AIR TEMPERATURE
Figure 10. Figure 11. Figure 12.
8
www.ti.com
0
1
2
3
4
5
6
7
8
9
10
11
12
2.7 3.0 3.3 3.6 3.9 4.2 4.5 4.8 5.1 5.4 5.7 6.0
VDD − Supply Voltage − V
SR−
SR+
SR − Slew Rate − V/µs
AV = 1
V(step) = 1 V to 2 V
TA = 25° C
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
CL − Load Capacitance − pF
10 300100
VDD = 2.7 V and 5 V
RL = 2 kΩ
AV = 1
TA = 25°C
Rnull = 100 Ω
Rnull = 0 Ω
φm− Phase Margin − °
Rnull = 20 Ω
0
50
100
150
200
250
300
350
400
450
500 VDD = 2.7 V and 5 V
TA = 25° C
f − Frequency − Hz
10 1k 100k10k100
nV/ Hz− Equivalent Input Noise Voltage −Vn
0
1
2
3
4
5
6
7
8
9
−0.10.00.10.20.30.40.50.60.70.80.91.01.11.21.31.4
1
2
3
4
5
t − Time − µs
− Common-Mode Input Voltage − VVIC
− Output Voltage − VVO
0
VDD = 5 V
VIC = 3.5 V
RL = 2 kΩ
CL = 10 pF
AV = 1
TA = 25°C
VO
VIC
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
2.40
2.45
2.50
2.55
2.60
2.65
2.70
2.75
2.80
−0.10.00.10.20.30.40.5 0.60.70.80.91.01.11.2
2.40
2.45
2.50
2.55
2.60
t − Time − µs
VDD = 5 V
VIC = 100 mV
RL = 2 kΩ
CL = 10 pF
AV = 1
TA = 25°C
VO
VIC
− Output Voltage − VVO
− Common-Mode Input Voltage − VVIC
0.0 0.2 0.4 0.6 0.8 1.0 1.2
TLV2620, TLV2621TLV2622, TLV2623TLV2624, TLV2625
SLOS251D – DECEMBER 2000 – REVISED JANUARY 2005
SLEW RATE SLEW RATE SLEW RATEvs vs vsSUPPLY VOLTAGE FREE-AIR TEMPERATURE FREE-AIR TEMPERATURE
Figure 13. Figure 14. Figure 15.
EQUIVALENT INPUT NOISEPHASE MARGIN VOLTAGEvs vsLOAD CAPACITANCE FREQUENCY
Figure 16. Figure 17.
VOLTAGE-FOLLOWER LARGE-SIGNAL VOLTAGE-FOLLOWER SMALL-SIGNALPULSE RESPONSE PULSE RESPONSE
Figure 18. Figure 19.
9
www.ti.com
−140
−120
−100
−80
−60
−40
−20
0
f − Frequency − Hz
10 1k 100k10k100
Crosstalk − dB
Shutdown Crosstalk
VDD = 2.7 V and 5 V
RL = 2 kΩ
CL = 10 pF
AV = 1
VO(PP) = VDD/2
TA = 25°C
All Channels
Crosstalk
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
−40−25−10 5 20 35 50 65 80 95 110 125
TA − Free-Air Temperature − °C
VDD = 5 V
VDD = 2.7 V
Shutdown = 0
V
AV = 1
VIC = VDD/2
VDD = 3.6 V
DD(SD)
IShutdown Supply Current −− A/chµ
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VDD − Supply Voltage − V
Shutdown = 0
V
AV = 1
VIC = VDD/2
TA = 70°C
TA = 25°C
TA = 125°C
TA = 0°C
TA = −40°C
DD(SD)
IShutdown Supply Current −− A/chµ
0 1 2 3 4 5 6
0 1 2 3 4 5 6 7 8
SD − Shutdown Pulse − V
9
t − Time − µs
0.0
1.0
2.0
3.0
4.0
5.0
− Output Voltage − mVVO
0.0
0.5
1.0
1.5
2.0
2.5
1.0
0.5
0.0
1.5
SD
IDD(SD)
VO
DD(SD)
IShutdown Supply Current −− Aµ
2.0
VDD = 5 V
AV = 1
RL = 2 kΩ
CL = 10 pF
VIC = VDD/2
TA = 25° C
TLV2620, TLV2621TLV2622, TLV2623TLV2624, TLV2625
SLOS251D – DECEMBER 2000 – REVISED JANUARY 2005
CROSSTALK SHUTDOWN SUPPLY CURRENT SHUTDOWN SUPPLY CURRENTvs vs vsFREQUENCY FREE-AIR TEMPERATURE SUPPLY VOLTAGE
Figure 20. Figure 21. Figure 22.
SHUTDOWN SUPPLY CURRENT/OUTPUT VOLTAGEvs
TIME
Figure 23.
10
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TLV2620IDBVR ACTIVE SOT-23 DBV 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2620IDBVRG4 ACTIVE SOT-23 DBV 6 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2620IDBVT ACTIVE SOT-23 DBV 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2620IDBVTG4 ACTIVE SOT-23 DBV 6 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2620IDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2620IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2621IDBVR ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2621IDBVRG4 ACTIVE SOT-23 DBV 5 3000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2621IDBVT ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2621IDBVTG4 ACTIVE SOT-23 DBV 5 250 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2621IDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2621IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2622ID ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2622IDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2622IDGK ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2622IDGKG4 ACTIVE VSSOP DGK 8 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2622IDGKR ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 2
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TLV2622IDGKRG4 ACTIVE VSSOP DGK 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2622IDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2622IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2623IDGS ACTIVE MSOP DGS 10 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2623IDGSG4 ACTIVE MSOP DGS 10 80 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2623IDGSR ACTIVE MSOP DGS 10 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2623IDGSRG4 ACTIVE MSOP DGS 10 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2623IDR ACTIVE SOIC D 14 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2623IDRG4 ACTIVE SOIC D 14 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2624ID ACTIVE SOIC D 14 50 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2624IDG4 ACTIVE SOIC D 14 50 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2624IDR ACTIVE SOIC D 14 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2624IDRG4 ACTIVE SOIC D 14 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2624IPW ACTIVE TSSOP PW 14 90 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2624IPWG4 ACTIVE TSSOP PW 14 90 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2624IPWR ACTIVE TSSOP PW 14 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2624IPWRG4 ACTIVE TSSOP PW 14 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2625IDR ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
PACKAGE OPTION ADDENDUM
www.ti.com 16-Aug-2012
Addendum-Page 3
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TLV2625IDRG4 ACTIVE SOIC D 16 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TLV2620IDBVR SOT-23 DBV 6 3000 180.0 9.0 3.15 3.2 1.4 4.0 8.0 Q3
TLV2620IDBVT SOT-23 DBV 6 250 180.0 9.0 3.15 3.2 1.4 4.0 8.0 Q3
TLV2620IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
TLV2621IDBVR SOT-23 DBV 5 3000 180.0 9.0 3.15 3.2 1.4 4.0 8.0 Q3
TLV2621IDBVT SOT-23 DBV 5 250 180.0 9.0 3.15 3.2 1.4 4.0 8.0 Q3
TLV2621IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
TLV2622IDGKR VSSOP DGK 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
TLV2622IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
TLV2623IDGSR MSOP DGS 10 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
TLV2623IDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
TLV2624IDR SOIC D 14 2500 330.0 16.4 6.5 9.0 2.1 8.0 16.0 Q1
TLV2624IPWR TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
TLV2624IPWRG4 TSSOP PW 14 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1
TLV2625IDR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 16-Aug-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TLV2620IDBVR SOT-23 DBV 6 3000 182.0 182.0 20.0
TLV2620IDBVT SOT-23 DBV 6 250 182.0 182.0 20.0
TLV2620IDR SOIC D 8 2500 340.5 338.1 20.6
TLV2621IDBVR SOT-23 DBV 5 3000 182.0 182.0 20.0
TLV2621IDBVT SOT-23 DBV 5 250 182.0 182.0 20.0
TLV2621IDR SOIC D 8 2500 340.5 338.1 20.6
TLV2622IDGKR VSSOP DGK 8 2500 358.0 335.0 35.0
TLV2622IDR SOIC D 8 2500 340.5 338.1 20.6
TLV2623IDGSR MSOP DGS 10 2500 358.0 335.0 35.0
TLV2623IDR SOIC D 14 2500 333.2 345.9 28.6
TLV2624IDR SOIC D 14 2500 333.2 345.9 28.6
TLV2624IPWR TSSOP PW 14 2000 367.0 367.0 35.0
TLV2624IPWRG4 TSSOP PW 14 2000 367.0 367.0 35.0
TLV2625IDR SOIC D 16 2500 333.2 345.9 28.6
PACKAGE MATERIALS INFORMATION
www.ti.com 16-Aug-2012
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other
changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. Buyers should
obtain the latest relevant information before placing orders and should verify that such information is current and complete. All
semiconductor products (also referred to herein as “components”) are sold subject to TI’s terms and conditions of sale supplied at the time
of order acknowledgment.
TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms
and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary
to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily
performed.
TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and
applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or
other intellectual property right relating to any combination, machine, or process in which TI components or services are used. Information
published by TI regarding third-party products or services does not constitute a license to use such products or services or a warranty or
endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual property of the
third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of significant portions of TI information in TI data books or data sheets is permissible only if reproduction is without alteration
and is accompanied by all associated warranties, conditions, limitations, and notices. TI is not responsible or liable for such altered
documentation. Information of third parties may be subject to additional restrictions.
Resale of TI components or services with statements different from or beyond the parameters stated by TI for that component or service
voids all express and any implied warranties for the associated TI component or service and is an unfair and deceptive business practice.
TI is not responsible or liable for any such statements.
Buyer acknowledges and agrees that it is solely responsible for compliance with all legal, regulatory and safety-related requirements
concerning its products, and any use of TI components in its applications, notwithstanding any applications-related information or support
that may be provided by TI. Buyer represents and agrees that it has all the necessary expertise to create and implement safeguards which
anticipate dangerous consequences of failures, monitor failures and their consequences, lessen the likelihood of failures that might cause
harm and take appropriate remedial actions. Buyer will fully indemnify TI and its representatives against any damages arising out of the use
of any TI components in safety-critical applications.
In some cases, TI components may be promoted specifically to facilitate safety-related applications. With such components, TI’s goal is to
help enable customers to design and create their own end-product solutions that meet applicable functional safety standards and
requirements. Nonetheless, such components are subject to these terms.
No TI components are authorized for use in FDA Class III (or similar life-critical medical equipment) unless authorized officers of the parties
have executed a special agreement specifically governing such use.
Only those TI components which TI has specifically designated as military grade or “enhanced plastic” are designed and intended for use in
military/aerospace applications or environments. Buyer acknowledges and agrees that any military or aerospace use of TI components
which have not been so designated is solely at the Buyer's risk, and that Buyer is solely responsible for compliance with all legal and
regulatory requirements in connection with such use.
TI has specifically designated certain components which meet ISO/TS16949 requirements, mainly for automotive use. Components which
have not been so designated are neither designed nor intended for automotive use; and TI will not be responsible for any failure of such
components to meet such requirements.
Products Applications
Audio www.ti.com/audio Automotive and Transportation www.ti.com/automotive
Amplifiers amplifier.ti.com Communications and Telecom www.ti.com/communications
Data Converters dataconverter.ti.com Computers and Peripherals www.ti.com/computers
DLP® Products www.dlp.com Consumer Electronics www.ti.com/consumer-apps
DSP dsp.ti.com Energy and Lighting www.ti.com/energy
Clocks and Timers www.ti.com/clocks Industrial www.ti.com/industrial
Interface interface.ti.com Medical www.ti.com/medical
Logic logic.ti.com Security www.ti.com/security
Power Mgmt power.ti.com Space, Avionics and Defense www.ti.com/space-avionics-defense
Microcontrollers microcontroller.ti.com Video and Imaging www.ti.com/video
RFID www.ti-rfid.com
OMAP Mobile Processors www.ti.com/omap TI E2E Community e2e.ti.com
Wireless Connectivity www.ti.com/wirelessconnectivity
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2012, Texas Instruments Incorporated