Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor's system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMA1028NZ Dual N-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package x 3.7 A, 20V. RDS(ON) = 68 m: @ VGS = 4.5V RDS(ON) = 86 m: @ VGS = 2.5V solution for dual switching requirements in cellular handset and other ultra-portable applications. x Low profile - 0.8 mm maximum - in the new package It low on-state resistance for minimum conduction losses. MicroFET 2x2 mm x HBM ESD protection level > 2kV (Note 3) The MicroFET 2x2 package offers exceptional thermal x RoHS Compliant performance for its physical size and is well suited to Free from halogenated compounds and antimony oxides features two independent N-Channel MOSFETs with linear mode applications. PIN 1 S1 G1 D1 D2 D2 S1 1 6 D1 G1 2 5 G2 D2 3 4 S2 D1 G2 S2 MicroFET 2x2 Absolute Maximum Ratings Symbol VDS o TA=25 C unless otherwise noted Parameter Drain-Source Voltage VGS Gate-Source Voltage Drain Current ID - Continuous V r12 V A 3.7 (Note 1a) 1.4 (Note 1b) 0.7 6 Power Dissipation for Single Operation TJ, TSTG Units 20 (Note 1a) - Pulsed PD Ratings Operating and Storage Junction Temperature Range -55 to +150 W qC Thermal Characteristics RTJA Thermal Resistance, Junction-to-Ambient (Note 1a) 86 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1b) 173 (Single Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1c) 69 (Dual Operation) RTJA Thermal Resistance, Junction-to-Ambient (Note 1d) 151 (Dual Operation) qC/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 028 FDMA1028NZ 7'' 8mm 3000 units 20 3 Fairchild Semiconductor Corporation FDMA1028NZ Rev B7 FDMA1028NZ Dual N-Channel PowerTrench MOSFET July 2014 Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 PA VGS = 0 V, ID = 250 PA, Referenced to 25qC 20 V mV/qC 15 Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 PA Gate-Body Leakage VGS = 12 V, VDS = 0 V 10 PA On Characteristics (Note 2) VGS(th) 'VGS(th) 'TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance gFS Forward Transconductance ID = 250 PA VDS = VGS, ID = 250 PA, Referenced to 25qC 0.6 1.0 1.5 V mV/qC -4 VGS = 4.5 V, ID = 3.7 A VGS = 2.5 V, ID = 3.3 A VGS= 4.5 V, ID = 3.7 A, TJ=125qC 37 50 53 VDS = 10 V, ID = 3.7 A 16 S VDS = 10 V, f = 1.0 MHz V GS = 0 V, 340 pF 80 pF 68 86 90 m: Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 60 pF 25 8 16 ns 8 16 ns 14 26 ns 3 6 ns 4 6 (Note 2) VDD = 10 V, VGS = 4.5 V, VDS = 10 V, VGS = 4.5 V ID = 1 A, RGEN = 6 : ID = 3.7 A, nC 0.7 nC 1.1 nC FDMA1028NZ Rev B7 FDMA1028NZ Dual N-Channel PowerTrench MOSFET Electrical Characteristics Notes: 1. RJA is determined with the device mounted on a 1 in2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RJA is determined by the user's board design. (a) RJA = 86 C/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For single operation. (b) RJA = 173 C/W when mounted on a minimum pad of 2 oz copper. For single operation. (c) RJA = 69 oC/W when mounted on a 1 in2 pad of 2 oz copper, 1.5 " x 1.5 " x 0.062 " thick PCB. For dual operation. (d) RJA = 151 oC/W when mounted on a minimum pad of 2 oz copper. For dual operation. a. 86 C/W when mounted on a 1 in2 pad of 2 oz copper b. 173 C/W when mounted on a minimum pad of 2 oz copper c. 69 C/W when mounted on a 1 in2 pad of 2 oz copper d. 151 C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test : Pulse Width < 300 us, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDMA1028NZ Rev B7 FDMA1028NZ Dual N-Channel PowerTrench MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted 6 2 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.5V VGS = 4.5V ID, DRAIN CURRENT (A) 5 3.5V 3.0V 4 3 2 1 1.5V 0 0.2 0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V) 1 1.4 2.5V 1.2 3.0V 3.5V 4.0V 1 1.2 0 Figure 1. On-Region Characteristics. 4.5V 1 2 3 4 ID, DRAIN CURRENT (A) 5 6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.13 1.6 ID = 3.7A VGS = 4.5V 1.5 ID = 1.85A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 0.8 0 1.4 1.3 1.2 1.1 1 0.9 0.8 0.11 0.09 o 0.07 TA = 125 C 0.05 o TA = 25 C 0.7 0.6 0.03 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 0 Figure 3. On-Resistance Variation with Temperature. 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 6 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 5 ID, DRAIN CURRENT (A) VGS = 2.0V 1.8 4 3 2 o TA = 125 C -55oC 1 o 10 1 0.1 TA = 125oC 0.01 o 25 C o 0.001 -55 C 25 C 0.0001 0 0.5 1 1.5 2 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDMA1028NZ Rev B7 FDMA1028NZ Dual N-Channel PowerTrench MOSFET Typical Characteristics 10 500 VDS = 5V VGS, GATE-SOURCE VOLTAGE (V) ID = 3.7A f = 1MHz VGS = 0 V 15V 8 400 CAPACITANCE (pF) 10V 6 4 300 200 Coss 2 100 0 0 Crss 0 2 4 6 Qg, GATE CHARGE (nC) 8 10 0 Figure 7. Gate Charge Characteristics. RDS(ON) LIMIT 100us 1ms 10ms 100ms 1s 10s DC 1 VGS = 4.5V SINGLE PULSE RTJA = 173C/W TA = 25C 0.1 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RTJA = 173C/W TA = 25C 40 30 20 10 0.01 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 20 50 P(pk), PEAK TRANSIENT POWER (W) 10 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics. 100 ID, DRAIN CURRENT (A) Ciss 0 0.0001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RTJA(t) = r(t) * RTJA RTJA =173 C/W 0.2 0.1 P(pk) 0.1 0.05 t1 0.02 0.01 t2 TJ - TA = P * RTJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.01 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDMA1028NZ Rev B7 FDMA1028NZ Dual N-Channel PowerTrench MOSFET Typical Characteristics FDMA1028NZ Dual N-Channel PowerTrench MOSFET Dimensional Outline and Pad Layout Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor's online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_MLDEB-X06 FDMA1028NZ Rev B7 tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Fairchild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 FDMA1028NZ Rev B7 FDMA1028NZ Dual N-Channel PowerTrench MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPowerTM F-PFSTM (R)* (R) AX-CAP(R)* FRFET(R) (R) SM BitSiCTM Global Power Resource PowerTrench TinyBoost(R) GreenBridgeTM PowerXSTM Build it NowTM TinyBuck(R) Programmable Active DroopTM CorePLUSTM Green FPSTM TinyCalcTM (R) QFET CorePOWERTM Green FPSTM e-SeriesTM TinyLogic(R) CROSSVOLTTM QSTM GmaxTM TINYOPTOTM CTLTM Quiet SeriesTM GTOTM TinyPowerTM Current Transfer LogicTM RapidConfigureTM IntelliMAXTM TinyPWMTM DEUXPEED(R) ISOPLANARTM TM TinyWireTM Dual CoolTM Marking Small Speakers Sound Louder TranSiCTM Saving our world, 1mW/W/kW at a timeTM EcoSPARK(R) and BetterTM TriFault DetectTM SignalWiseTM EfficentMaxTM MegaBuckTM TRUECURRENT(R)* SmartMaxTM ESBCTM MICROCOUPLERTM SerDesTM SMART STARTTM MicroFETTM (R) Solutions for Your SuccessTM MicroPakTM SPM(R) MicroPak2TM Fairchild(R) UHC(R) STEALTHTM MillerDriveTM Fairchild Semiconductor(R) Ultra FRFETTM SuperFET(R) MotionMaxTM FACT Quiet SeriesTM UniFETTM SuperSOTTM-3 mWSaver(R) FACT(R) (R) VCXTM OptoHiTTM SuperSOTTM-6 FAST (R) VisualMaxTM OPTOLOGIC SuperSOTTM-8 FastvCoreTM (R) (R) VoltagePlusTM OPTOPLANAR SupreMOS FETBenchTM SyncFETTM XSTM FPSTM Sync-LockTM TM ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com (c) Semiconductor Components Industries, LLC N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 1 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com