SOT89 NPN SILICON PLANAR FCX5550 HIGH VOLTAGE TRANSISTOR FEATURES * HIGH Vceo=140V. * LOW Vcesary=0.25V. * COMPLEMENTARY TYPE - FCX5401 PARTMARKING DETAILS - N9 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE | UNIT | Collector-Base Voltage Vego 160 Vv Collector-Emitter Voltage . Vceo 140 Vv Emitter-Base Voltage Veso 6 | Vv Continuous Collector Current Ic 600 mA Power Dissipation @ Tamp=25'c Prot 1 WwW Operating And Storage Temperature Range tj:tstg -65 TO +150 c ELECTRICAL CHARACTERISTICS (at T,mp=25 C unless otherwise stated) PARAMETER SYMBOL MIN. | MAX.| UNIT | CONDITIONS. Collector-Base Breakdown Voltage | Visaycso 160 Vv Ic=100nA Collector-Emitter Breakdown ViBriceo 140 Vv lc=I1MA Voltage Emitter-Base Breakdown Voltage = Visrieso 6 Vv le=10nA Collector Cut-Off Current IcBo 100 nA Vecp=100V ; ; 100 WA Vep=100V, Ta= 100C Collector-Emitter Saturation VceIsaT) 0.15 Vv Ic=10mA, Ip=1MA Voltage 0.25 v Ic=50mMA, Ip=5mA Base-Emitter Saturation VBE(SAT) 1.0 Vv Ic=10mA, Ip=1MA Voltage | 12 |v Ic=50mMA, la=5MA Static Forward Current here 60 Cy Ic= TMA, Vce=5V Transfer Ratio 60 250 Ic=10MA, Vce=5V po . oo 20 Ic=50mA, Vce=5V Transition Frequency fr 100 300 MHz | Ic=10MA, Vce=10V, po oe | =100MHz Small Signal Current Gain Hee 50 200 lc=1 ma. Vce=10V f=1KHz Output Capacitance 6 pF | Vce=10V, f= MHz. Noise Figure Ne | 10 dB Ic=250uA, Vce=5V, RS=1KQ, f=10Hz to 15.7KHz * Measured under pulsed conditions. Pulse width=300us. Duty cycle=s2% DS155