1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 12 Vdc
Collector–Base Voltage VCBO 20 Vdc
Emitter–Base Voltage VEBO 2.5 Vdc
Collector Current — Continuous IC50 mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°CPD200
1.14 mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°CPD300
1.71 mW
mW/°C
Storage Temperature Range Tstg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 3.0 mAdc, IB = 0) VCEO(sus) 12 — Vdc
Collector–Base Breakdown Voltage
(IC = 0.001 mAdc, IE = 0) V(BR)CBO 20 — Vdc
Emitter–Base Breakdown Voltage
(IE = 0.01 mAdc, IC = 0) V(BR)EBO 2.5 — Vdc
Collector Cutoff Current
(VCB = 15 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0, TA = 150°C)
ICBO —
—0.02
1.0
µAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 3.0 mAdc, VCE = 1.0 Vdc) hFE 25 250 —
Collector–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — 0.4 Vdc
Base–Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) — 1.0 Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by MPS5179/D
SEMICONDUCTOR TECHNICAL DATA
Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
123
Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
MPS5179
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(1)
(IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 100 MHz) fT900 2000 MHz
Collector–Base Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 to 1.0 MHz) Ccb — 1.0 pF
Small Signal Current Gain
(IC = 2.0 mAdc, VCE = 6.0 Vdc, f = 1.0 kHz) hfe 25 300 —
Collector Base Time Constant
(IE = 2.0 mAdc, VCB = 6.0 Vdc, f = 31.9 MHz) rb′Cc3.0 14 ps
Noise Figure (See Figure 1)
(IC = 1.5 mAdc, VCE = 6.0 Vdc, RS = 50 ohms, f = 200 MHz) NF — 5.0 dB
Common–Emitter Amplifier Power Gain (See Figure 1)
(VCE = 6.0 Vdc, IC = 5.0 mAdc, f = 200 MHz) Gpe 15 — dB
1. fT is defined as the frequency at which |hfe| extrapolates to unity.
DC
COMMON
TYPE
1N3195
TYPE
1N3195
1200
91
FROM 50
Ω
SOURCE
1.0 – 5.0
L3
EXTERNAL
SHIELD L2
2.0 – 10
C7 TO 50
Ω
LOAD
2.0 – 10
C6
0.1
µ
F
0.001
µ
FRFC
1.0
µ
H
0.1
µ
F1200 +VCC
10 k
1200
–VEE
Cin
3.0 – 35 C2
2.0 – 10
L1
0.02
µ
F
Figure 1. 200 MHz Amplifier Power Gain
and Noise Figure Circuit
L1 1–3/4 Turns, #18 AWG, 0.5″ L, 0.5″ Diameter
L2 2 Turns, #16 AWG, 0.5″ L, 0.5″ Diameter
L3 2 Turns, #13 AWG, 0.25″ L, 0.5″ Diameter (Position 1/4″ from L2)
Q
MPS5179
3
Motorola Small–Signal Transistors, FETs and Diodes Device Data
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
A
P
J
L
F
B
K
G
HSECTION X–X
C
V
D
N
N
X X
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.022 0.41 0.55
F0.016 0.019 0.41 0.48
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 ––– 12.70 –––
L0.250 ––– 6.35 –––
N0.080 0.105 2.04 2.66
P––– 0.100 ––– 2.54
R0.115 ––– 2.93 –––
V0.135 ––– 3.43 –––
1
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
CASE 029–04
(TO–226AA)
ISSUE AD
MPS5179
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data
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MPS5179/D
*MPS5179/D*
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