IRFB41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFSL41N15DPbF HEXFET(R) Power MOSFET Applications High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Lead-Free S D G IRFB41N15DPbF IRFSL41N15DPbF IRFIB41N15DPbF TO-220 TO-262 TO-220 Full-Pak IRFS41N15DPbF D2-Pak Absolute Maximum Ratings Symbol RDS(on) max 0.045 ID 41A D S S D G G G D2 Pak IRFS41N15DPbF TO-220 Full-Pak IRFB41N15DPbF G Gate Package Type 150V D TO-220AB IRFB41N15DPbF Base part number VDSS D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 S D TO-262 Pak IRFSL41N15DPbF S Source Orderable Part Number IRFB41N15DPbF IRFSL41N15DPbF IRFIB41N15DPbF IRFS41N15DPbF IRFS41N15DTRLPbF Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 41 ID @ TC = 100C IDM PD @TA = 25C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation D2-Pak 29 164 3.1 A PD @TC = 25C Maximum Power Dissipation TO-220 200 W PD @TC = 25C Maximum Power Dissipation TO-220 Full-Pak Linear Derating FactorTO-220 Linear Derating FactorTO-220 Full-Pak Gate-to-Source Voltage 48 1.3 0.32 30 W/C Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw 2.7 V/ns VGS dv/dt TJ TSTG Thermal Resistance Symbol RJC RJC RCS RJA RJA RJA 1 Parameter Junction-to-Case Junction-to-Case, TO-220 Full-Pak Case-to-Sink, Flat, Greased Surface Junction-to-Ambient,TO-220 Junction-to-Ambient,D2-Pak Junction-to-Ambient, TO-220 Full-Pak V -55 to + 175 C 300 10 lbf*in (1.1N*m) Typ. Max. Units --- --- 0.50 --- --- --- 0.75 3.14 --- 62 40 65 C/W 2017-04-27 IRFB/IB/S/SL41N15DPbF Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Dynamic @ TJ = 25C (unless otherwise specified) gfs Forward Trans conductance Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance Coss Output Capacitance Coss eff. Effective Output Capacitance Min. 150 --- --- 3.0 --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = 250A 0.17 --- V/C Reference to 25C, ID = 1mA --- 0.045 VGS = 10V, ID = 25A --- 5.5 V VDS = VGS, ID = 250A --- 25 VDS = 150 V, VGS = 0V A --- 250 VDS = 120V,VGS = 0V,TJ =150C --- 100 VGS = 30V nA -100 VGS = -30V 18 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 72 21 35 16 63 25 14 2520 510 110 3090 230 250 --- 110 31 52 --- --- --- --- --- --- --- --- --- --- S VDS = 50V, ID = 25A ID = 25A nC VDS = 120V VGS = 10V VDD = 75V ID = 25A ns RG= 2.5 VGS = 10V VGS = 0V VDS = 25V = 1.0MHz pF VGS = 0V, VDS = 1.0V = 1.0MHz VGS = 0V, VDS = 120V = 1.0MHz VGS = 0V, VDS = 0V to 120V Avalanche Characteristics Parameter EAS IAR EAR Typ. --- --- --- Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ton Forward Turn-On Time Min. Typ. --- --- 41 --- --- 164 --- --- --- --- 170 1.3 1.3 260 1.9 Max. 470 25 20 Units mJ A mJ Max. Units Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 25A,VGS = 0V ns TJ = 25C ,IF = 25A C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. starting TJ = 25C, L = 1.5mH, RG = 25, IAS = 25A. ISD 25A, di/dt 340A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. This is only applied to TO-220AB package. This is applied to D2Pak, when mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 2017-04-27 IRFB/IB/S/SL41N15DPbF I D , Drain-to-Source Current (A) TOP BOTTOM 100 1000 VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V 6.0V TOP I D , Drain-to-Source Current (A) 1000 10 1 10 BOTTOM 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 100 TJ = 175 C TJ = 25 C V DS= 25V 20s PULSE WIDTH 7 8 9 10 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 10 100 Fig. 2 Typical Output Characteristics 1000 6 1 VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 1 20s PULSE WIDTH TJ = 175 C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 10 6.0V 10 20s PULSE WIDTH TJ = 25 C 6.0V 1 0.1 100 VGS 15V 10V 9.0V 8.0V 7.5V 7.0V 6.5V 6.0V 11 ID = 41A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ, Junction Temperature ( C) Fig. 4 Normalized On-Resistance vs. Temperature 2017-04-27 IRFB/IB/S/SL41N15DPbF 20 VGS = 0V, f = 1 MHZ C iss = C gs + C gd , C ds C rss = C gd C oss = C ds + C gd 10000 Ciss 1000 Coss 100 Crss 10 100 VDS = 120V VDS = 75V VDS = 30V 12 8 4 0 1 ID = 25A 16 10 1000 FOR TEST CIRCUIT SEE FIGURE 13 0 20 Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 60 80 100 120 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ID , Drain Current (A) 100 TJ = 175 C 10us 100 10 TJ = 25 C 100us 10 1ms 1 0.1 0.2 V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 40 QG, Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) C, Capacitance(pF) SHORTED VGS , Gate-to-Source Voltage (V) 100000 1 1.8 10ms TC = 25 C TJ = 175 C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2017-04-27 IRFB/IB/S/SL41N15DPbF 50 ID , Drain Current (A) 40 30 20 Fig 10a. Switching Time Test Circuit 10 0 25 50 75 100 125 TC , Case Temperature 150 175 ( C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.1 0.01 0.00001 PDM 0.10 t1 0.05 0.02 0.01 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.0001 0.001 0.01 0.1 1 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2017-04-27 IRFB/IB/S/SL41N15DPbF EAS , Single Pulse Avalanche Energy (mJ) 1200 15V 1000 L VDS DRIVER D.U.T RG + V - DD IAS 20V tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS ID 10A 21A 25A TOP BOTTOM 800 600 400 200 0 25 50 75 100 125 150 Starting T ,J Junction Temperature 175 ( C) tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2017-04-27 IRFB/IB/S/SL41N15DPbF Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 7 2017-04-27 IRFB/IB/S/SL41N15DPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to website at http://www.irf.com/package/ 8 2017-04-27 IRFB/IB/S/SL41N15DPbF TO-220 Full-Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak Part Marking Information TO-220AB Full-Pak packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to website at http://www.irf.com/package/ 9 2017-04-27 IRFB/IB/S/SL41N15DPbF (Dimensions are D2-Pak (TO-263AB) Package Outline shown in millimeters (inches)) D2-Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L ASSEMBLY LOT CODE OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to website at http://www.irf.com/package/ 10 2017-04-27 IRFB/IB/S/SL41N15DPbF TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW19, 1997 IN THE ASSEMBLYLINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to website at http://www.irf.com/package/ 11 2017-04-27 IRFB/IB/S/SL41N15DPbF D2-Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 2017-04-27 IRFB/IB/S/SL41N15DPbF Qualification Information Industrial (per JEDEC JESD47F) Qualification Level TO-220AB N/A TO-220 Full-Pak Moisture Sensitivity Level TO-262 MSL1 (per JEDEC J-STD-020D) Yes D2-Pak RoHS Compliant Applicable version of JEDEC standard at the time of product release. Revision History Date 04/27/2017 Comments Changed datasheet with Infineon logo - all pages. Corrected Package Outline on page 8,9,10,11. Added disclaimer on last page. Trademarks of Infineon Technologies AG HVICTM, IPMTM, PFCTM, AU-ConvertIRTM, AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM, CoolDPTM, CoolGaNTM, COOLiRTM, CoolMOSTM, CoolSETTM, CoolSiCTM, DAVETM, DI-POLTM, DirectFETTM, DrBladeTM, EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, eupecTM, FCOSTM, GaNpowIRTM, HEXFETTM, HITFETTM, HybridPACKTM, iMOTIONTM, IRAMTM, ISOFACETM, IsoPACKTM, LEDrivIRTM, LITIXTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM, OPTIGATM, OptiMOSTM, ORIGATM, PowIRaudioTM, PowIRStageTM, PrimePACKTM, PrimeSTACKTM, PROFETTM, PRO-SILTM, RASICTM, REAL3TM, SmartLEWISTM, SOLID FLASHTM, SPOCTM, StrongIRFETTM, SupIRBuckTM, TEMPFETTM, TRENCHSTOPTM, TriCoreTM, UHVICTM, XHPTM, XMCTM Trademarks updated November 2015 Other Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2016-04-19 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2016 Infineon Technologies AG. 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