1
Dual-In-Line, SOIC-8 and MSOP-8
SD
NC V-
GND IN
V+ VL
2
3
4
8
7
6
5
Top View
1
Dual-In-Line, SOIC-8 and MSOP-8
D S2
S1V-
GND IN
V+ VL
2
3
4
8
7
6
5
Top View
DG417B
DG419B
DG417B/418B/419B
Vishay Siliconix
New Product
Document Number: 72107
S-31538—Rev. B, 11-Aug-03 www.vishay.com
1
Precision CMOS Analog Switches
FEATURES BENEFITS APPLICATIONS
D"15-V Analog Signal Range
DOn-Resistance—rDS(on): 15
DFast Switching Action—tON: 100 ns
DTTL and CMOS Compatible
DMSOP-8 and SOIC-8 Packaging
DWide Dynamic Range
DLow Signal Errors and Distortion
DBreak-Before-Make Switching Action
DSimple Interfacing
DReduced Board Space
DImproved Reliability
DPrecision Test Equipment
DPrecision Instrumentation
DBattery Powered Systems
DSample-and-Hold Circuits
DMilitary Radios
DGuidance and Control Systems
DHard Disk Drives
DESCRIPTION
The DG417B/418B/419B monolithic CMOS analog switches
were designed to provide high performance switching of
analog signals. Combining low power, low leakages, high
speed, low on-resistance and small physical size, the DG417B
series is ideally suited for portable and battery
powered industrial and military applications requiring high
performance and efficient use of board space.
To achieve high-voltage ratings and superior switching
performance, the DG417B series is built on Vishay Siliconix’s
high voltage silicon gate (HVSG) process. Break-before-make
is guaranteed for the DG419B, which is an SPDT
configuration. An epitaxial layer prevents latchup.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
The DG417B and DG418B respond to opposite control logic
levels as shown in the Truth Table.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
Logic DG417B DG418B
0 ON OFF
1 OFF ON
Logic “0” = v 0.8 V, Logic “1” = w 2.4 V
TRUTH TABLEDG419B
Logic SW1SW2
0 ON OFF
1 OFF ON
Logic “0” = v 0.8 V, Logic “1” = w 2.4 V
DG417B/418B/419B
Vishay Siliconix New Product
www.vishay.com
2Document Number: 72107
S-31538—Rev. B, 11-Aug-03
ORDERING INFORMATION
Temp Range Package Part Number
DG417B/418B
8 Pin Plastic MiniDIP
DG417BDJ
8-Pin Plastic MiniDIP DG418BDJ
40 to 85
_
C
8 Pin Narrow SOIC
DG417BDY
-40 to 85_C8-Pin Narrow SOIC DG418BDY
8 Pin MSOP
DG417BDQ
8-Pin MSOP DG418BDQ
55 to 125
_
C
8 Pin CerDIP
DG417BAK, DG417BAK/883
-55 to 125_C8-Pin CerDIP DG418BAK, DG418BAK/883
DG419B
8-Pin Plastic MiniDIP DG419BDJ
-40 to 85_C8-Pin Narrow SOIC DG419BDY
8-Pin MSOP DG419BDQ
-55 to 125_C8-Pin CerDIP DG419BAK, DG419BAK/883
NOTE: SMD product is dual marked with /883 number.
ABSOLUTE MAXIMUM RATINGS
V- -20 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V+ 20 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GND 25 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL(GND -0.3 V) to (V+) + 0.3 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Digital Inputsa VS, VD (V-) -2 V to (V+) + 2 V. . . . . . . . . . . . . . . . . . . . . . . . . .
or 30 mA, whichever occurs first
Current, (Any Terminal) Continuous 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current (S or D) Pulsed 1 ms, 10% duty cycle 100 mA. . . . . . . . . . . . . . . . . .
Storage Temperature -65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation (Package)b
8-Pin Plastic MiniDIPc400 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8-Pin Narrow SOICc400 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8-Pin MSOPd400 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8-Pin CerDIPe600 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 5.3 mW/_C above 75_C
d. Derate 4 mW/_C above 70_C
e. Derate 8 mW/_C above 75_C
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
FIGURE 1.
Level
Shift/
Drive
VIN
VL
S
V+
GND
V-
D
V-
V+
DG417B/418B/419B
Vishay Siliconix
New Product
Document Number: 72107
S-31538—Rev. B, 11-Aug-03 www.vishay.com
3
SPECIFICATIONSa
Test Conditions
Unless Otherwise Specified A Suffix
-55 to 125_CD Suffix
-40 to 85_C
Parameter Symbol V+ = 15 V, V- = -15 V
VL = 5 V, VIN = 2.4 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full -15 15 -15 15 V
Drain-Source
On-Resistance rDS(on) IS = -10 mA, VD = "12.5 V
V+ = 13.5 V, V- = -13.5 V Room
Full 15 25
34 25
29
IS(off)
V 16 5 V V 16 5 V
Room
Full -0.1 -0.25
-20 0.25
20 -0.25
-5 0.25
5
Switch Off
Leakage Current
ID( ff)
V+ = 16.5 V, V- = -16.5 V
VD = #15.5 V
V
S
= "15.5 V
DG417B
DG418B Room
Full -0.1 -0.25
-20 0.25
20 -0.25
-5 0.25
5
g
ID(off)
V
S
=
"15
.
5 V
DG419B Room
Full -0.1 -0.75
-60 0.75
60 -0.75
-12 0.75
12 nA
Channel On
ID( )
V+ = 16.5 V, V- = -16.5 V DG417B
DG418B Room
Full -0.4 -0.4
-40 0.4
40 -0.4
-10 0.4
10
Channel On
Leakage Current ID(on)
V+ = 16
.
5 V
,
V- = -16
.
5 V
VS = VD = "15.5 V DG419B Room
Full -0.4 -0.75
-60 0.75
60 -0.75
-12 0.75
12
Digital Control
Input Current VIN Low IIL Full -0.5 0.5 -0.5 0.5
A
Input Current VIN High IIH Full -0.5 0.5 -0.5 0.5 A
Dynamic Characteristics
Turn-On Time tON RL = 300 , CL = 35 pF
VS = "10 V DG417B
DG418B Room
Full 62 89
106 89
99
Turn-Off Time tOFF
VS = "10 V
See Switching Time
Test Circuit DG417B
DG418B Room
Full 53 80
88 80
86
Transition Time tTRANS RL = 300 , CL = 35 pF
VS1 = "10 V, VS2 = #10 V DG419B Room
Full 60 87
96 87
93
ns
Break-Before-Make
Time Delay tDRL = 300 , CL = 35 pF
VS1 = VS2 = "10 V DG419B Room 16 3 3
Charge Injection QCL = 10 nF, Vgen = 0 V, Rgen = 0 Room 4 pC
Off-IsolationeOIRR RL = 50 , CL = 5 nF f = 1 MHz Room -86
Channel-To-Channel
CrosstalkeXTALK DG419B Room -87 dB
Source Off Capacitance CS(off) Room 12
Drain Off Capacitance CD(off) f = 1 MHz, VS = 0 V DG417B
DG418B Room 12
pF
Channel On
Capacitance
CD(on) f = 1 MHz, V
S
= 0 V DG417B
DG418B Room 50 pF
Capacitance
f = 1 MHz
,
VS = 0 V
DG419B Room 57
Power Supplies
Positive Supply
Current I+ Room
Full 0.001 1
51
5
Negative Supply
Current I-
V+ = 16 5 V V = 16 5 V
Room
Full -0.001 -1
-5 -1
-5
Logic Supply Current IL
V+ = 16.5 V, V- = -16.5 V
VIN = 0 or 5 V Room
Full 0.001 1
51
5A
Ground Current IGND Room
Full -0.000
1-1
-5 -1
-5
DG417B/418B/419B
Vishay Siliconix New Product
www.vishay.com
4Document Number: 72107
S-31538—Rev. B, 11-Aug-03
SPECIFICATIONSa FOR UNIPOLAR SUPPLIES
Test Conditions
Unless Otherwise Specified A Suffix
-55 to 125_CD Suffix
-40 to 85_C
Parameter Symbol V+ = 12 V, V- = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full 0 12 0 12 V
Drain-Source
On-Resistance rDS(on) IS = -10 mA, VD = 3.8 V
V+ = 10.8 V Room
Full 26 35
52 35
45
Dynamic Characteristics
Turn-On Time tON R
L
= 300 , C
L
= 35
p
F, V
S
= 8 V Room
Full 100 125
155 125
143
Turn-Off Time tOFF
RL = 300
,
CL = 35 pF
,
VS = 8 V
See Switching Time Test Circuit Room
Full 38 66
73 66
69
ns
Break-Before-Make
Time Delay tDRL = 300 , CL = 35 pF DG419B Room 62 25 25 ns
Transition Time tRANS RL = 300 , CL = 35 pF
VS1 = 0 V, 8 V, VS2 = 8 V, 0 V Room
Full 95 119
153 119
141
Charge Injection QCL = 10 nF, Vgen = 0 V, Rgen = 0 Room 3 pC
Power Supplies
Positive Supply
Current I+ Room
Full 0.001 1
51
5
Negative Supply
Current I- V+ = 13.2 V, VL = 5.25 V Room -0.001 -1
-5 -1
-5
A
Logic Supply Current IL
V+ = 13
.
2 V
,
VL = 5
.
25 V
VIN = 0 or 5 V Room 0.001 1
51
5
A
Ground Current IGND Room -0.001 -1
-5 -1
-5
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG417B/418B/419B
Vishay Siliconix
New Product
Document Number: 72107
S-31538—Rev. B, 11-Aug-03 www.vishay.com
5
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
5
10
15
20
25
30
-15 -10 -5 0 5 10 15
0
50
100
150
200
250
300
0 4 8 12 16 20
V+ = 3.0 V
VL = 3 V
Supply Current vs. Input Switching Frequency
Input Switching Frequency (Hz)
V+ = 5.0 V
5
10
15
20
25
30
35
40
-20 -15 -10 -5 0 5 10 15 20
-55_C
V" = "15 V
VL = 5 V
TA = 25_C
VL = 5 V
On-Resistance vs. VD and Temperature
25_C
85_C
10 100 1 K 10 K 100 K 1 M 10 M
1 00 p
10 n
100 n
1 m
100 m
1
10
100
Supply Current (nA)I+ -
On-Resistance vs. VD and Unipolar Supply Voltage
rDS(on) - Drain-Source On-Resistance ()
VD - Drain Voltage (V)
V+ = 8.0 V
V+ = 12.0 V
V+ = 15.0 V
V+ = 20.0 V
On-Resistance vs. VD and Dual Supply Voltage
rDS(on) - Drain-Source On-Resistance ()
VD - Drain Voltage (V)
TA = 25_C
" 5 V
" 8 V
" 10 V
" 12 V
" 15 V
" 20 V
rDS(on) - Drain-Source On-Resistance ()
VD - Drain Voltage (V)
125_C
5
10
15
20
25
30
35
40
45
50
024681012
-55_C
On-Resistance vs. VD and Temperature
25_C
85_C
rDS(on) - Drain-Source On-Resistance ()
VD - Drain Voltage (V)
125_C
V+ = 12 V
v- = 0 V
VL = 5 V
-100
-80
-60
-40
-20
0
20
40
60
80
100
-15 -10 -5 0 5 10 15
Leakage vs. Analog Voltage
VD or VS - Drain or Source Voltage (V)
ID(off)
V" = "15 V
VL = 5 V
TA = 25_C
ID, IS (pA)
ID(on)
IS(off)
10 m
1 n
V" = "15 V
VL = 5 V
I+, I-
IL
DG417B/418B/419B
Vishay Siliconix New Product
www.vishay.com
6Document Number: 72107
S-31538—Rev. B, 11-Aug-03
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4 6 8 10 12 14 16 18 20
- Switching Threshold (V)
TALK
(ns)
20
40
60
80
100
120
140
-55 -35 -15 5 25 45 65 85 105 125
-30
-25
-20
-15
-10
-5
0
5
10
15
20
25
30
-15 -12 -9 -6 -3 0 3 6 9 12 15
Switching Time vs. Temperature
VS - Analog Voltage (V)V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage Charge Injection vs. Analog Voltage
Q - Charge Injection (pC)
V = "15 V
tON, tOFF
Temperature (_C)
tON V = "15 V
tON V = 12 V
tOFF V = 12 V
100 k
-110 1 M
-30
10
-70
-50
100 M 1 G
Frequency (Hz)
-90
Insertion Loss, Off -Isolation
Crosstalk vs. Frequency
Loss
10 M
-10
Loss, OIRR, X (dB)
V+ = 3 V
V- = 0 V
RL = 50
VT
VL = 5 V
V+ = 12 V
20
40
60
80
100
120
140
-55 -35 -15 5 25 45 65 85 105 125
Transition Time vs. Temperature
Temperature (_C)
VL = 5 V
tOFF V = "15 V
20
30
40
50
60
70
80
90
100
-55 -35 -15 5 25 45 65 85 105 125
Transition Time vs. Temperature
Temperature (_C)
tTRANS-
V" = "15 V
VL = 5 V
tTRANS+
(ns)tON, tOFF
(ns)tON, tOFF
V+ = 12 V
v- = 0 V
VL = 5 V
tTRANS-
tTRANS+
OIRR
XTALK
C = 10 nF
DG417B/418B/419B
Vishay Siliconix
New Product
Document Number: 72107
S-31538—Rev. B, 11-Aug-03 www.vishay.com
7
TEST CIRCUITS
FIGURE 2. Switching Time (DG417B/418B)
FIGURE 3. Break-Before-Make (DG419B)
CL (includes fixture and stray capacitance)
RL
RL + rDS(on)
VO = VS
V-
IN
SD
CL
35 pF
-15 V
VL
GND
VO
"10 V
V+
RL
300
+15 V+5 V
VO is the steady state output with the switch on.
0 V
Logic
Input
Switch
Input
Switch
Output
3 V
50%
0 V
VO
VS
tr <5 ns
tf <5 ns
tOFF
tON
90%
Note: Logic input waveform is inverted for switches that have the
opposite logic sense.
IN
VL
VS1 D
V-
VS2 S2
V+
S1
-15 V
GND
+15 V+5 V
CL
35 pF
VO
RL
300
CL (includes fixture and stray capacitance)
0 V
3 V
0 V
Logic
Input
Switch
Output
VO
VS1 = VS2
tr <5 ns
tf <5 ns
90%
tDtD
FIGURE 4. Transition Time (DG419B)
CL (includes fixture and stray capacitance)
VL
RL
RL + rDS(on)
VO = VS
V-
V+
IN
CL
35 pF
RL
300
DVO
S2
S1
VS2
VS1
-15 V
GND
+15 V+5 V
0 V
3 V
50%
Logic
Input
Switch
Output
VS1
tr <5 ns
tf <5 ns
10%
tTRANS
90%
V01
VS2 V02
tTRANS
DG417B/418B/419B
Vishay Siliconix New Product
www.vishay.com
8Document Number: 72107
S-31538—Rev. B, 11-Aug-03
TEST CIRCUITS
FIGURE 5. Charge Injection
FIGURE 6. Crosstalk (DG419B)
CL
10 nF
D
RgVO
V+
S
V-
3 V IN
VL
-15 V
GND
+15 V+5 V
OFFONOFF
VO
VO
INX
Q = VO x CL
Rg = 50
IN
0.8 V
VLV+
V-
XTALK Isolation = 20 log VO
VS
GND
S2
VS
VO
S1
RL
D
C = RF bypass
50
+15 V
-15 V
C
C+5 V C
V+
SVL
Rg = 50
D
-15 V
VS
GND V- C
RL
IN
VO
0V, 2.4 V
Off Isolation = 20 log VO
VS
+5 V
C
+15 V
C
FIGURE 7. Off Isolation
FIGURE 8. Insertion Loss
S
VSVO
0V, 2.4 V IN RL
VLD
Rg = 50
+5 V
-15 V
GND V- C
C+15 V
V+
C
DG417B/418B/419B
Vishay Siliconix
New Product
Document Number: 72107
S-31538—Rev. B, 11-Aug-03 www.vishay.com
9
TEST CIRCUITS
FIGURE 9. Source/Drain Capacitances
VL
IN
S
V+
D
f = 1 MHz
-15 V
GND V- C
0 V, 2.4 V Meter
HP4192A
Impedance
Analyzer
or Equivalent
+5 V
C
+15 V
C
D2D1
S1
f = 1 MHz
+15 V
IN
S2
NC
-15 V
GND
V+
V- C
C
0 V, 2.4 V Meter
HP4192A
Impedance
Analyzer
or Equivalent
DG417B/418B
DG419B
VL
IN
S
V+
D
f = 1 MHz
-15 V
GND V- C
0 V, 2.4 V
+5 V
C
+15 V
C
D2D1
S1
f = 1 MHz
+15 V
IN
S2
NC
-15 V
GND
V+
V- C
C
0 V, 2.4 V Meter
HP4192A
Impedance
Analyzer
or Equivalent
