MJD200T4 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data



  

NPN/PNP Silicon DPAK For Surface Mount

Applications

. . . designed for low voltage, low–power, high–gain audio amplifier applications.

•Collector–Emitter Sustaining Voltage —

VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc

•High DC Current Gain — hFE = 70 (Min) @ IC = 500 mAdc

= 45 (Min) @ IC = 2 Adc

= 10 (Min) @ IC = 5 Adc

•Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (“–1” Suffix)

•Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc

= 0.75 Vdc (Max) @ IC = 2.0 Adc

•High Current–Gain — Bandwidth Product — fT = 65 MHz (Min) @ IC = 100 mAdc

•Annular Construction for Low Leakage — ICBO = 100 nAdc @ Rated VCB

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Value

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎ

12.5

0.1

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎ

1.4

0.011

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient*

ÎÎÎÎ

RθJC

RθJA

ÎÎÎÎÎÎ

89.3

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 10 mAdc, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

ÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0)

(VCB = 40 Vdc, IE = 0, TJ = 125

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎ

100

ÎÎÎ

nAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VBE = 8 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎ

100

ÎÎÎ

nAdc

*When surface mounted on minimum pad sizes recommended. (continued)

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

[

2%.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJD200/D

 Motorola, Inc. 1995





CASE 369A–13

SILICON

POWER TRANSISTORS

5 AMPERES

25 VOLTS

12.5 WATTS

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.243

6.172

0.063

1.6

0.118

3.0

0.07

1.8 0.165

4.191

0.190

4.826

inches





REV 1

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS — continued (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 500 mAdc, VCE = 1 Vdc)

(IC = 2 Adc, VCE = 1 Vdc)

(IC = 5 Adc, VCE = 2 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

180

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 2 Adc, IB = 200 mAdc)

(IC = 5 Adc, IB = 1 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.3

0.75

1.8

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1) (IC = 5 Adc, IB = 1 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (1) (IC = 2 Adc, VCE = 1 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.6

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (2)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance MJD200

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz) MJD210

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

120

ÎÎÎ

(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle

[

2%.

(2) fT = hfe• ftest.

Figure 1. Power Derating

T, TEMPERATURE (

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Test Circuit

10K

IC, COLLECTOR CURRENT (AMPS)

500

300

200

100

IC, COLLECTOR CURRENT (AMPS)

VCC = 30 V

IC/IB = 10

TJ = 25

t, TIME (ns)

500

300

200

100

2.5

1.5

0.5

0.01 0.03 0.05 0.50.2

0.02 0.1 0.3 10

Figure 3. Turn–On Time Figure 4. Turn–Off Time

+11 V 25

–9 V

–4 V

SCOPE

VCC

+30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1%

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

TA (SURFACE MOUNT)

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

FOR PNP TEST CIRCUIT,

REVERSE ALL POLARITIES

t, TIME (ns)

521 3

MJD200

MJD210

0.01 0.03 0.05 0.50.2

0.02 0.1 0.3 10521 3

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25

MJD200

MJD210

 

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMP)

IC, COLLECTOR CURRENT (AMP)IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

Figure 5. DC Current Gain

Figure 6. “On” Voltage

IC, COLLECTOR CURRENT (AMP)

200

400

0.07 0.1 0.3 50.05

100

0.2

IC, COLLECTOR CURRENT (AMP)

Figure 7. Temperature Coefficients

20 0.7 1 320.5

TJ = 150

–55

0.05 IC, COLLECTOR CURRENT (AMP) 5

1.6

1.2

0.8

0.4

0320.07 0.20.1 0.50.3 10.7

TJ = 25

V, VOLTAGE (VOLTS)

NPN

MJD200 PNP

MJD210

VCE = 1 V

VCE = 2 V

50.05 3

200

400

100

hFE, DC CURRENT GAIN

TJ = 150

–55

VCE = 1 V

VCE = 2 V

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1 V

VC for VCE(sat)

VB for VBE

0.05

1.6

1.2

0.8

0.4

0320.07 0.20.1 0.50.3 10.7

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 1 V

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+2.5

+1.5

–0.5

–1

–1.5

–2

+0.5

–2.5 0.07 0.1 0.3 50.05 0.2 0.7 1 320.5

*APPLIES FOR IC/IB

≤

hFE/3

C to 150

–55

C to 25

C to 150

–55

C to 25

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+2.5

+1.5

–0.5

–1

–1.5

–2

+0.5

–2.5 0.07 0.1 0.3 50.05 0.2 0.7 1 320.5

0.07 0.1 0.30.2 0.7 1 20.5

*APPLIES FOR IC/IB

≤

hFE/3

VC for VCE(sat)

VB for VBE

C to 150

–55

C to 25

C to 150

–55

C to 25

 

4 Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

0.01

0.02 0.05 1 2 5 10 20 50 100 2000.1 0.50.2

0.2

0.1

0.05

r(t), TRANSIENT THERMAL

JC(t) = r(t)

JC = 10

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.2

0 (SINGLE PULSE)

RESISTANCE (NORMALIZED)

Figure 8. Thermal Response

0.5 D = 0.5

0.05

0.3

0.7

0.07

0.03

0.02

0.1

0.02

0.01

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.01 30

0.1 BONDING WIRE LIMITED

THERMALLY LIMITED @ TC = 25

(SINGLE PULSE)

SECOND BREAKDOWN LIMITED

CURVES APPLY BELOW

RATED VCEO

Figure 9. Active Region Safe Operating Area

500

31 ms

2010753210.3

100

TJ = 150

IC, COLLECTOR CURRENT (AMP)

5 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 9 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in Fig-

ure 8. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

Case 369–05 may be ordered by adding a “–1” suffix to the

device title (i.e. MJD200–1)

200

VR, REVERSE VOLTAGE (VOLTS)

20 40

100

Figure 10. Capacitance

201064210.4

C, CAPACITANCE (pF)

0.6

TJ = 25

MJD200 (NPN)

MJD210 (PNP)

Cob

Cib

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 369A–13

ISSUE W

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

123

–T–

SEATING

PLANE

GD3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.175 0.215 4.45 5.46

S0.050 0.090 1.27 2.28

V0.030 0.050 0.77 1.27

CASE 369–07

ISSUE K

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2 PL

0.13 (0.005) T

–T–

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.180 BSC 4.58 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.102 0.114 2.60 2.89

L0.090 BSC 2.29 BSC

R0.175 0.215 4.45 5.46

S0.020 0.050 0.51 1.27

U0.020 ––– 0.51 –––

V0.030 0.050 0.77 1.27

Z0.138 ––– 3.51 –––

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

 

6 Motorola Bipolar Power Transistor Device Data

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MJD200/D

*MJD200/D*

◊