1000MP 0.5 Watts, 20 Volts Linear to 1000 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1000MP is a COMMON EMITTER transistor capable of providing 0.5 Watt of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C 5.3 Maximum Voltage and Current 45 Collector to Base Voltage (BVces) Emitter to Base Voltage (BVebo) 3.5 Collector Current (Ic) 300 Maximum Temperatures Storage Temperature -40 to +150 Operating Junction Temperature +200 W V V mA C C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL CHARACTERISTICS Pout Pin Pg Ft Power Output Power Input Power Gain Transition Frequency VSWR Load Mismatch Tolerance TEST CONDITIONS MIN TYP F = 1000 MHz Ic = 140 mA Vcc = 20 Volts 0.5 0.8 MAX 0.1 7.0 3.4 9.0 3.7 UNITS W W dB GHz 30:1 FUNCTIONAL CHARACTERISTICS @ 25C BVebo BVces BVceo hFE Cob jc1 Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Breakdown DC - Current Gain Capacitance Thermal Resistance Ie = 1 mA Ic = 10 mA Ic = 10 mA Vce = 5V, Ic = 100 mA Vcb = 28V, f =1 MHz 3.5 45 22 20 V V V 2.0 3.0 33 pF C/W Note 1: At rated output power Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. 1000MP Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.