1000MP
0.5 Watts, 20 Volts
Linear to 1000 MHz
GENERAL DESCRIPTION
The 1000MP is a COMMON EMITTER transistor capable of providing 0.5
Watt of Class A, RF output power to 1000 MHz. This transistor is specifically
designed for general Class A amplifier applications. It utilizes gold metalization
and diffused ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25°C 5.3 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 45 V
Emitter to Base Voltage (BVebo) 3.5 V
Collector Current (Ic) 300 mA
Maximum Temperatures
Storage Temperature -40 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Output F = 1000 MHz 0.5 0.8 W
Pin Power Input Ic = 140 mA 0.1 W
Pg Power Gain Vcc = 20 Volts 7.0 9.0 dB
Ft Transition Frequency 3.4 3.7 GHz
VSWR Load Mismatch Tolerance
30:1
FUNCTIONAL CHARACTERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 1 mA 3.5 V
BVces Collector to Emitter Breakdown Ic = 10 mA 45 V
BVceo Collector to Emitter Breakdown Ic = 10 mA 22 V
hFE DC – Current Gain Vce = 5V, Ic = 100 mA 20
Cob Capacitance Vcb = 28V, f =1 MHz 2.0 3.0 pF
θjc1 Thermal Resistance 33 °C/W
Note 1: At rated output power
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
Advanced Power Technology reserves the right to change, without notice, the specifications and information
contained herein. Visit our web site at www.advancedpower.com or contact our factory direct.
1000MP
