LT8580 Boost/SEPIC/Inverting DC/DC Converter with 1A, 65V Switch, Soft-Start and Synchronization FEATURES DESCRIPTION 1A, 65V Power Switch nn Adjustable Switching Frequency nn Single Feedback Resistor Sets V OUT nn Synchronizable to External Clock nn High Gain SHDN Pin Accepts Slowly Varying Input Signals nn Wide Input Voltage Range: 2.55V to 40V nn Low V CESAT Switch: 400mV at 0.75A (Typical) nn Integrated Soft-Start Function nn Easily Configurable as a Boost, SEPIC, or Inverting Converter nn User Configurable Undervoltage Lockout (UVLO) nn Pin Compatible with LT3580 nn Tiny Thermally Enhanced 8-Lead 3mm x 3mm DFN and 8-Lead MSOP Packages nn AEC-Q100 Qualification in Progress The LT(R)8580 is a PWM DC/DC converter containing an internal 1A, 65V switch. The LT8580 can be configured as either a boost, SEPIC or inverting converter. APPLICATIONS All registered trademarks and trademarks are the property of their respective owners. nn The LT8580 has an adjustable oscillator, set by a resistor from the RT pin to ground. Additionally, the LT8580 can be synchronized to an external clock. The switching frequency of the part may be free running or synchronized, and can be set between 200kHz and 1.5MHz. The LT8580 also features innovative SHDN pin circuitry that allows for slowly varying input signals and an adjustable undervoltage lockout function. Additional features such as frequency foldback and soft-start are integrated. The LT8580 is available in tiny thermally enhanced 3mm x 3mm 8-lead DFN and 8-lead MSOP packages. VFD Bias Supplies TFT-LCD Bias Supplies nn GPS Receivers nn DSL Modems nn Local Power Supply nn nn TYPICAL APPLICATION 1.5MHz, 5V to 12V Boost Converter 15H VOUT 12V 200mA 10k SW SHDN FBX 130k 4.7F LT8580 2.2F SYNC RT VC GND 56.2k 6.04k SS 47pF 0.22F 100 480 90 420 80 360 70 300 60 240 50 180 40 120 EFFICIENCY POWER LOSS 30 3.3nF 8580 TA01a 20 0 50 150 100 LOAD CURRENT (mA) POWER LOSS (mW) VIN EFFICIENCY (%) VIN 5V Efficiency and Power Loss 60 0 200 8580 TA01b Rev. B Document Feedback For more information www.analog.com 1 LT8580 ABSOLUTE MAXIMUM RATINGS (Note 1) VIN Voltage.................................................. -0.3V to 40V SW Voltage................................................. -0.4V to 65V RT Voltage.................................................... -0.3V to 5V SS Voltage................................................. -0.3V to 2.5V FBX Voltage..................................................................5V FBX Current.............................................................-1mA VC Voltage.................................................... -0.3V to 2V SHDN Voltage............................................. -0.3V to 40V SYNC Voltage............................................. -0.3V to 5.5V Operating Junction Temperature Range LT8580E (Notes 2, 5).......................... -40C to 125C LT8580I (Notes 2, 5)........................... -40C to 125C LT8580H (Notes 2, 5)......................... -40C to 150C Storage Temperature Range...................-65C to 150C PIN CONFIGURATION TOP VIEW FBX 1 VC 2 VIN 3 TOP VIEW 8 SYNC 9 GND SW 4 FBX VC VIN SW 7 SS 6 RT 5 SHDN 1 2 3 4 9 GND 8 7 6 5 SYNC SS RT SHDN MS8E PACKAGE 8-LEAD PLASTIC MSOP DD PACKAGE 8-LEAD (3mm x 3mm) PLASTIC DFN JA = 35C/W TO 40C/W EXPOSED PAD (PIN 9) IS GND, MUST BE SOLDERED TO PCB JA = 43C/W EXPOSED PAD (PIN 9) IS GND, MUST BE SOLDERED TO PCB ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING* PACKAGE DESCRIPTION TEMPERATURE RANGE LT8580EDD#PBF LT8580EDD#TRPBF LGKH 8-Lead (3mm x 3mm) Plastic DFN - 40C to 125C LT8580IDD#PBF LT8580IDD#TRPBF LGKH 8-Lead (3mm x 3mm) Plastic DFN - 40C to 125C LT8580HDD#PBF LT8580HDD#TRPBF LGKH 8-Lead (3mm x 3mm) Plastic DFN - 40C to 150C LT8580EMS8E#PBF LT8580EMS8E#TRPBF LTGKJ 8-Lead Plastic MSOP - 40C to 125C LT8580IMS8E#PBF LT8580IMS8E#TRPBF LTGKJ 8-Lead Plastic MSOP - 40C to 125C LT8580HMS8E#PBF LT8580HMS8E#TRPBF LTGKJ 8-Lead Plastic MSOP - 40C to 150C AUTOMOTIVE PRODUCTS** LT8580EMS8E#WPBF LT8580EMS8E#WTRPBF LTGKJ 8-Lead Plastic MSOP - 40C to 125C LT8580IMS8E#WPBF LT8580IMS8E#WTRPBF LTGKJ 8-Lead Plastic MSOP - 40C to 125C LT8580HMS8E#WPBF LT8580HMS8E#WTRPBF LTGKJ 8-Lead Plastic MSOP - 40C to 150C Contact the factory for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container. Tape and reel specifications. Some packages are available in 500 unit reels through designated sales channels with #TRMPBF suffix. **Versions of this part are available with controlled manufacturing to support the quality and reliability requirements of automotive applications. These models are designated with a #W suffix. Only the automotive grade products shown are available for use in automotive applications. Contact your local Analog Devices account representative for specific product ordering information and to obtain the specific Automotive Reliability reports for thesemodels. Rev. B 2 For more information www.analog.com LT8580 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25C. VIN = 5V, VSHDN = VIN unless otherwise noted. (Note 2) PARAMETER CONDITIONS Operating Voltage Range LT8580E, LT8580I LT8580H Positive Feedback Voltage Negative Feedback Voltage Positive FBX Pin Bias Current Negative FBX Pin Bias Current MIN l l l l VFBX = Positive Feedback Voltage, Current Into Pin VFBX = Negative Feedback Voltage, Current Out of Pin l l 2.55 2.9 1.185 -3 81 81 Error Amplifier Transconductance Error Amplifier Voltage Gain Quiescent Current Quiescent Current in Shutdown Reference Line Regulation Switching Frequency, fOSC Switching Frequency in Foldback Switching Frequency Set Range SYNC High Level for Synchronization SYNC Low Level for Synchronization SYNC Clock Pulse Duty Cycle Recommended Minimum SYNC Ratio fSYNC/fOSC Minimum Off-Time Minimum On-Time Switch Current Limit Switch VCESAT Switch Leakage Current Soft-Start Charging Current SHDN Minimum Input Voltage High SHDN Input Voltage Low SHDN Pin Bias Current TYP MAX UNITS 1.204 3 83.3 83.3 40 40 1.220 12 85 86 V V V mV A A 200 VSHDN = 2.5V, Not Switching VSHDN = 0V 2.5V VIN 40V RT = 56.2k RT = 422k Compared to Normal fOSC SYNCing or Free Running l l 1.23 165 l 200 1.3 l 60 1.2 0 0.01 1.5 200 1/6 0.4 65 35 Minimum Duty Cycle (Note 3) Maximum Duty Cycle (Notes 3, 4), fOSC = 1.5MHz Maximum Duty Cycle (Notes 3, 4), fOSC = 200kHz ISW = 0.75A VSW = 5V VSS = 0.5V Active Mode, SHDN Rising Active Mode, SHDN Falling Shutdown Mode VSHDN = 3V VSHDN = 1.3V VSHDN = 0V SHDN Hysteresis Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: The LT8580E is guaranteed to meet performance specifications from 0C to 125C junction temperature. Specifications over the -40C to 125C operating junction temperature range are assured by design, characterization and correlation with statistical process controls. The LT8580I is guaranteed over the full -40C to 125C operating junction temperature range. The LT8580H is guaranteed over the full -40C to 150C operating junction temperature range. Operating lifetime is derated at junction temperatures greater than 125C. l l l 1.2 0.6 0.4 l 4 1.23 1.21 l l 3/4 100 120 1.5 1 0.8 400 0.01 6 1.31 1.27 l 9 1.7 1 0.05 1.77 235 1500 l VSYNC = 0V to 2V mhos 44 12 0 40 1.8 1.5 1.4 1 8 1.4 1.33 0.3 56 15 0.1 V/V mA A %/V MHz kHz Ratio kHz V V % ns ns A A A mV A A V V V A A A mV Note 3: Current limit guaranteed by design and/or correlation to static test. Note 4: Current limit measured at equivalent of listed switching frequency. Note 5: This IC includes overtemperature protection that is intended to protect the device during momentary overload conditions. Junction temperature will exceed 150C when overtemperature protection is active. Continuous operation above the specified maximum operating junction temperature may impair device reliability. Rev. B For more information www.analog.com 3 LT8580 TYPICAL PERFORMANCE CHARACTERISTICS 1.75 600 1.25 1.00 0.75 0.50 500 400 300 200 1.5 1.0 0.5 100 0.25 0 2.0 SWITCH CURRENT (A) 700 1.50 Commanded Switch Current vs SS Switch Saturation Voltage 2.00 SATURATION VOLTAGE (mV) SWITCH CURRENT LIMIT (A) Switch Current Limit vs Duty Cycle TA = 25C, unless otherwise specified 10 20 30 40 50 60 70 DUTY CYCLE (%) 80 90 0 0 0.25 1 0.5 0.75 1.25 SWITCH CURRENT (A) Switch Current Limit vs Temperature POSITIVE FBX VOLTAGE (V) 1.5 1.0 0.5 1.220 30 1.215 25 1.210 20 1.205 15 1.200 10 1.195 5 1.190 0 1.185 -5 1.180 -10 1.175 -15 1.170 -50 -25 25 50 75 100 125 150 TEMPERATURE (C) 1.2 0 -20 25 50 75 100 125 150 TEMPERATURE (C) Oscillator Frequency 86 85 85 84 84 83 83 82 82 81 81 80 25 50 75 100 125 150 TEMPERATURE (C) 1.8 RT = 56.2k 1.6 1.4 FREQUENCY (MHz) 86 NEGATIVE FBX CURRENT OUT OF PIN (A) POSITIVE FBX CURRENT INTO PIN (A) 1 8580 G05 Positive and Negative FBX Current at Output Voltage Regulation 0 0.4 0.6 0.8 SS VOLTAGE (V) 8580 G03 8580 G04 80 -50 -25 0.2 NEGATIVE FBX VOLTAGE (mV) SWITCH CURRENT LIMIT (A) 0 Positive and Negative Output Voltage Regulation 2.0 0 0 8580 G02 8580 G01 0 -50 -25 1.5 1.2 1.0 0.8 0.6 0.4 RT = 422k 0.2 0 -50 -25 8580 G06 0 25 50 75 100 125 150 TEMPERATURE (C) 8580 G07 Rev. B 4 For more information www.analog.com LT8580 TYPICAL PERFORMANCE CHARACTERISTICS Internal UVLO 1/2 0 INVERTING CONFIGURATIONS 0.2 0 1 2.6 25 2.5 2.4 2.3 2.2 NONINVERTING CONFIGURATIONS 0.4 0.6 0.8 FBX VOLTAGE (V) 30 2.1 -50 -25 1.2 0 SHDN VOLTAGE (V) SHDN PIN CURRENT (A) 350 150 100 1.34 1.32 SHDN RISING 1.30 1.28 1.26 SHDN FALLING 1.24 50 10 15 20 25 30 35 40 SHDN VOLTAGE (V) 1.20 -50 -25 0 25 50 75 100 125 150 TEMPERATURE (C) 8580 G11 8580 G12 RECOMMENDED MINIMUM ON TIME 300 250 200 150 100 50 1.22 5 2 400 1.36 200 0.25 0.5 0.75 1 1.25 1.5 1.75 SHDN VOLTAGE (V) Minimum On Time vs Temperature 1.38 250 0 8580 G10 1.40 125C 25C -40C 0 10 Active/Lockout Threshold 300 0 15 8580 G09 SHDN Pin Current 350 20 0 25 50 75 100 125 150 TEMPERATURE (C) 8580 G08 400 125C 25C -40C 5 MINIMUM ON TIME (NS) 1/3 1/4 1/5 1/6 SHDN Pin Current 2.7 SHDN PIN CURRENT (A) 1 VIN VOLTAGE (V) NORMALIZED OSCILLATOR FREQUENCY (F/FNOM) Oscillator Frequency During Soft-Start TA = 25C, unless otherwise specified MEASURED MINIMUM ON TIME 0 -50 -25 0 25 50 75 100 125 150 TEMPERATURE (C) 8580 G13 Rev. B For more information www.analog.com 5 LT8580 PIN FUNCTIONS FBX (Pin 1): Positive and Negative Feedback Pin. For a noninverting or inverting converter, tie a resistor from the FBX pin to VOUT according to the following equations: sequence. Drive below 1.21V to disable the chip. Drive above 1.40V to activate the chip and restart the soft-start sequence. Do not float this pin. RFBX = ( VOUT - 1.204V ) ; Noninverting Converter RFBX = ( VOUT + 3mV ) ; Inverting Converter RT (Pin 6): Timing Resistor Pin. Adjusts the switching frequency. Place a resistor from this pin to ground to set the frequency to a fixed free running level. Do not float this pin. 83.3A 83.3A SS (Pin 7): Soft-Start Pin. Place a soft-start capacitor here. Upon start-up, the SS pin will be charged by a (nominally) 280k resistor to about 2.1V. VC (Pin 2): Error Amplifier Output Pin. Tie external compensation network to this pin. SYNC (Pin 8): To synchronize the switching frequency to an outside clock, simply drive this pin with a clock. The high voltage level of the clock needs to exceed 1.3V, and the low level should be less 0.4V. Drive this pin to less than 0.4V to revert to the internal free-running clock. See the Applications Information section for more information. VIN (Pin 3): Input Supply Pin. Must be locally bypassed. SW (Pin 4): Switch Pin. This is the collector of the internal NPN Power switch. Minimize the metal trace area connec ted to this pin to minimize EMI. SHDN (Pin 5): Shutdown Pin. In conjunction with the UVLO (undervoltage lockout) circuit, this pin is used to enable/disable the chip and restart the soft-start GND (Exposed Pad Pin 9): Ground. Exposed pad must be soldered directly to local ground plane. BLOCK DIAGRAM RC VIN CSS 7 50k SHDN 5 1.3V - + VIN VC L1 SOFTSTART R 3 ILIMIT COMPARATOR - Q2 A3 + R 4 SR1 S DRIVER + A1 A4 - FBX + 14.5k RFBX 0.02 - SLOPE COMPENSATION 1 VOUT C1 Q1 Q + 14.5k D1 SW VC S 1.204V REFERENCE CIN 280k SR2 Q 2 SS DISCHARGE DETECT UVLO CC A2 FREQUENCY FOLDBACK GND 9 /N ADJUSTABLE OSCILLATOR - SYNC BLOCK SYNC 8 6 RT RT 8580 BD Rev. B 6 For more information www.analog.com LT8580 OPERATION The LT8580 uses a constant-frequency, current mode control scheme to provide excellent line and load regulation. Refer to the Block Diagram for the following description of the part's operation. At the start of each oscillator cycle, the SR latch (SR1) is set, which turns on the power switch, Q1. The switch current flows through the internal current sense resistor, generating a voltage proportional to the switch current. This voltage (amplified by A4) is added to a stabilizing ramp and the resulting sum is fed into the positive terminal of the PWM comparator A3. When this voltage exceeds the level at the negative input of A3, the SR latch is reset, turning off the power switch. The level at the negative input of A3 (VC pin) is set by the error amplifier A1 (or A2) and is simply an amplified version of the difference between the feedback voltage (FBX pin) and the reference voltage (1.204V or 3mV, depending on the configuration). In this manner, the error amplifier sets the correct peak current level to keep the output in regulation. The LT8580 has an FBX pin architecture that can be used for either noninverting or inverting configurations. When configured as a noninverting converter, the FBX pin is pulled up to the internal bias voltage of 1.204V by the RFBX resistor connected from VOUT to FBX. Amplifier A2 becomes inactive and amplifier A1 performs the inverting amplification from FBX to VC. When the LT8580 is in VIN > VOUT OR VIN = VOUT OR VIN < VOUT + C2 L1 * D1 VOUT VIN SW SHUTDOWN FBX RT GND SYNC RT * SHDN SS SEPIC Topology As shown in Figure 1, the LT8580 can be configured as a SEPIC (single-ended primary inductance converter). This topology allows for the input to be higher, equal, or lower than the desired output voltage. Output disconnect is inherently built into the SEPIC topology, meaning no DC path exists between the input and output. This is useful for applications requiring the output to be disconnected from the input source when the circuit is in shutdown. Inverting Topology The LT8580 can also work in a dual inductor inverting topology, as shown in Figure 2. The part's unique feedback pin allows for the inverting topology to be built by simply changing the connection of external components. This solution results in very low output voltage ripple due to the inductor L2 in series with the output. Abrupt changes in output capacitor current are eliminated because the output inductor delivers current to the output during both the off-time and the on-time of the LT8580 switch. + R1 VIN + C3 SW SHDN FBX RT GND SYNC RC CSS RT CC 8580 F01 Figure 1. SEPIC Topology Allows for the Input to Span the Output Voltage. Coupled or Uncoupled Inductors Can Be Used. Follow Noted Phasing if Coupled L2 SS * R1 VC + RC CSS VOUT D1 LT8580 C1 SHUTDOWN VC C2 L1 * VIN L2 LT8580 C1 an inverting configuration, the FBX pin is pulled down to 3mV by the RFBX resistor connected from VOUT to FBX. Amplifier A1 becomes inactive and amplifier A2 performs the noninverting amplification from FBX to VC. C3 CC 8580 F02 Figure 2. Dual Inductor Inverting Topology Results in Low Output Ripple. Coupled or Uncoupled Inductors Can Be Used. Follow Noted Phasing if Coupled Rev. B For more information www.analog.com 7 LT8580 OPERATION Start-Up Operation Several functions are provided to enable a very clean start-up for the LT8580. * First, the SHDN pin voltage is monitored by an internal voltage reference to give a precise turn-on voltage level. An external resistor (or resistor divider) can be connected from the input power supply to the SHDN pin to provide a user-programmable undervoltage lockout function. * Second, the soft-start circuitry provides for a gradual ramp-up of the switch current. When the part is brought out of shutdown, the external SS capacitor is first discharged (providing protection against SHDN pin glitches and slow ramping), then an integrated 280k resistor pulls the SS pin up to ~2.1V. By connecting an external capacitor to the SS pin, the voltage ramp rate on the pin can be set. Typical values for the soft-start capacitor range from 100nF to 1F. * Finally, the frequency foldback circuit reduces the switching frequency when the FBX pin is in a nominal range of 300mV to 920mV. This feature reduces the minimum duty cycle that the part can achieve thus allowing better control of the switch current during start-up. When the FBX voltage is pulled outside of this range, the switching frequency returns to normal. Current Limit and Thermal Shutdown Operation The LT8580 has a current limit circuit not shown in the Block Diagram. The switch current is constantly monitored and not allowed to exceed the maximum switch current at a given duty cycle (see the Electrical Characteristics table). If the switch current reaches this value, the SR latch (SR1) is reset regardless of the state of the comparator (A1/ A2). Also, not shown in the Block Diagram is the thermal shutdown circuit. If the temperature of the part exceeds approximately 165C, the SR2 latch is set regardless of the state of the amplifier (A1/A2). When the part temperature falls below approximately 160C, a full soft-start cycle will then be initiated. The current limit and thermal shutdown circuits protect the power switch as well as the external components connected to the LT8580. Rev. B 8 For more information www.analog.com LT8580 APPLICATIONS INFORMATION Setting Output Voltage The output voltage is set by connecting a resistor (RFBX) from VOUT to the FBX pin. RFBX is determined from the following equation: |V - VFBX | RFBX = OUT 83.3A where VFBX is 1.204V (typical) for noninverting topologies (i.e., boost and SEPIC regulators) and 3mV (typical) for inverting topologies (see the Electrical Characteristics). Power Switch Duty Cycle In order to maintain loop stability and deliver adequate current to the load, the power NPN (Q1 in the Block Diagram) cannot remain "on" for 100% of each clock cycle. The maximum allowable duty cycle is given by: DCMAX = (TP - Min Off Time) TP * 100% where TP is the clock period and Min Off Time (found in the Electrical Characteristics) is typically 100ns. The application should be designed so that the operating duty cycle does not exceed DCMAX. The minimum allowable duty cycle is given by: DCMIN = Min On Time TP * 100% where TP is the clock period and Minimum On Time is as shown in the Typical Performance Characteristics. The application should be designed so that the operating duty cycle is at least DCMIN. Duty cycle equations for several common topologies are given below, where VD is the diode forward voltage drop and VCESAT is typically 400mV at 0.75A. For the boost topology: DC VOUT - VIN + VD VOUT + VD - VCESAT For the SEPIC or dual inductor inverting topology (see Figure 1 and Figure 2): DC VD + |VOUT | VIN + |VOUT | + VD - VCESAT The LT8580 can be used in configurations where the duty cycle is higher than DCMAX, but it must be operated in the discontinuous conduction mode so that the effective duty cycle is reduced. Inductor Selection General Guidelines: The high frequency operation of the LT8580 allows for the use of small surface mount inductors. For high efficiency, choose inductors with high frequency core material, such as ferrite, to reduce core losses. To improve efficiency, choose inductors with more volume for a given inductance. The inductor should have low DCR (copper wire resistance) to reduce I2R losses, and must be able to handle the peak inductor current without saturating. Note that in some applications, the current handling requirements of the inductor can be lower, such as in the SEPIC topology, where each inductor only carries a fraction of the total switch current. Multilayer or chip inductors usually do not have enough core area to support peak inductor currents in the 1A to 2A range. To minimize radiated noise, use a toroidal or shielded inductor. Note that the inductance of shielded types will drop more as current increases, and will saturate more easily. See Table 1 for a list of inductor manufacturers. Thorough lab evaluation is recommended to verify that the following guidelines properly suit the final application. Table 1. Inductor Manufacturers Coilcraft XAL5050, MSD7342, MSS7341 and LPS4018 Series www.coilcraft.com Coiltronics DR, DRQ, LD and CD Series www.coiltronics.com Sumida CDRH8D58/LD, CDRH64B, and CDRH70D430MN Series www.sumida.com Wurth WE-PD, WE-DD, WE-TPC, WE-LHMI and WE-LQS Series www.we-online.com Minimum Inductance : Although there can be a trade-off with efficiency, it is often desirable to minimize board space by choosing smaller inductors. When choosing Rev. B For more information www.analog.com 9 LT8580 APPLICATIONS INFORMATION an inductor, there are two conditions that limit the minimum inductance: (1) providing adequate load current, and (2) avoiding subharmonic oscillation. Choose an inductance that is high enough to meet both of these requirements. Adequate Load Current : Small value inductors result in increased ripple currents and thus, due to the limited peak switch current, decrease the average current that can be provided to a load (IOUT). In order to provide adequate load current, L should be at least: L BOOST > VIN 2 DC - 1 L MIN > 1.25 * (DC - 300ns * f) * f 1- DC LMIN = L1 for boost topologies (see Figure 15) LMIN = L1 = L2 for coupled dual inductor topologies (see Figure 16 and Figure 17) DC * VIN |V | * I 2(f) I LIM - OUT OUT VIN * h LMIN = L1||L2 for uncoupled dual inductor topologies (see Figure 16 and Figure 17) for boost, topologies, or: L DUAL > Avoiding Subharmonic Oscillations: The LT8580's internal slope compensation circuit can prevent subharmonic oscillations that can occur when the duty cycle is greater than 50%, provided that the inductance exceeds a minimum value. In applications that operate with duty cycles greater than 50%, the inductance must be at least: Maximum Inductance: Excessive inductance can reduce current ripple to levels that are difficult for the current comparator (A3 in the Block Diagram) to cleanly discriminate, thus causing duty cycle jitter and/or poor regulation. The maximum inductance can be calculated by: DC * VIN V *I 2(f) I LIM- OUT OUT - IOUT VIN * h for the SEPIC and inverting topologies. where: LBOOST = L1 for boost topologies (see Figure 15) LDUAL = L1 = L2 for coupled dual inductor topologies (see Figure 16 and Figure 17) V -V DC L MAX = IN CESAT * IMIN-RIPPLE f where LMIN = L1 for boost topologies (see Figure 15) LMIN = L1 = L2 for coupled dual inductor topologies (see Figure 16 and Figure 17) LDUAL = L1||L2 for uncoupled dual inductor topologies (see Figure 16 and Figure 17) LMIN = L1||L2 for uncoupled dual inductor topologies (see Figure 16 and Figure 17) DC = switch duty cycle (see previous section) ILIM = switch current limit, typically about 1.2A at 50% duty cycle (see the Typical Performance Characteristics section). h = power conversion efficiency (typically 85% for boost and 83% for dual inductor topologies at high currents). f = switching frequency IMIN(RIPPLE) = typically 80mA Current Rating: Finally, the inductor(s) must have a rating greater than its peak operating current to prevent inductor saturation resulting in efficiency loss. In steady state, the peak input inductor current (continuous conduction mode only) is given by: IOUT = maximum load current Negative values of L indicate that the output load current IOUT exceeds the switch current limit capability of the LT8580. I L1-PEAK = |VOUT * IOUT | VIN * DC + VIN * h 2 * L1* f for the boost, SEPIC and dual inductor inverting topologies. Rev. B 10 For more information www.analog.com LT8580 APPLICATIONS INFORMATION For dual dual inductor topologies, the peak output inductor current is given by: I L2-PEAK = IOUT + VOUT * (1- DC ) 2 * L2 * f For the dual inductor topologies, the total peak current is: V * DC V I L-PEAK = IOUT 1+ OUT + IN h * VIN 2 * L * f Note: Peak inductor current is limited by the switch current limit. Refer to the Electrical Characteristics table and to the Switch Current Limit vs Duty Cycle plot in the Typical Performance Characteristics. Capacitor Selection Low ESR (equivalent series resistance) capacitors should be used at the output to minimize the output ripple voltage. Multilayer ceramic capacitors are an excellent choice, as they have an extremely low ESR and are available in very small packages. X5R or X7R dielectrics are preferred, as these materials retain their capacitance over wider voltage and temperature ranges. A 0.47F to 10F output capacitor is sufficient for most applications. Always use a capacitor with a sufficient voltage rating. Many ceramic capacitors, particularly 0805 or 0603 case sizes, have greatly reduced capacitance at the desired output voltage. Solid tantalum or OS-CON capacitors can be used, but they will occupy more board area than a ceramic and will have a higher ESR with greater output ripple. Ceramic capacitors also make a good choice for the input decoupling capacitor, which should be placed as closely as possible to the VIN pin of the LT8580 as well as to the inductor connected to the input of the power path. If it is not possible to optimally place a single input capacitor, then use one at the VIN pin of the chip (CVIN) and one at the input of the power path (CPWR). See equations in Table 4, Table 5 and Table 6 for sizing information. A 1F to 2.2F input capacitor is sufficient for most applications. Table 2 shows a list of several ceramic capacitor manufacturers. Consult the manufacturers for detailed information on their entire selection of ceramic parts. Table 2. Ceramic Capacitor Manufacturers Kemet www.kemet.com Murata www.murata.com Taiyo Yuden www.t-yuden.com TDK www.tdk.com Compensation--Adjustment To compensate the feedback loop of the LT8580, a series resistor-capacitor network in parallel with a single capacitor should be connected from the VC pin to GND. For most applications, the series capacitor should be in the range of 470pF to 2.2nF with 1nF being a good starting value. The parallel capacitor should range in value from 10pF to 100pF with 47pF a good starting value. The compensation resistor, RC , is usually in the range of 5k to 50k. A good technique to compensate a new application is to use a 100k potentiometer in place of series resistor RC. With the series capacitor and parallel capacitor at 1nF and 47pF respectively, adjust the potentiometer while observing the transient response and the optimum value for RC can be found. Figure 3 (3a to 3c) illustrates this process for the circuit of Figure 4 with a load current stepped between 60mA and 160mA. Figure 3a shows the transient response with RC equal to 2k. The phase margin is poor, as evidenced by the excessive ringing in the output voltage and inductor current. In Figure 3b, the value of RC is increased to 3k, which results in a more damped response. Figure 3c shows the results when RC is increased further to 6.04k. The transient response is nicely damped and the compensation procedure is complete. Compensation--Theory Like all other current mode switching regulators, the LT8580 needs to be compensated for stable and efficient operation. Two feedback loops are used in the LT8580-- a fast current loop which does not require compensation, and a slower voltage loop which does. Standard bode plot analysis can be used to understand and adjust the voltage feedback loop. Rev. B For more information www.analog.com 11 LT8580 APPLICATIONS INFORMATION ISTEP 100mA/DIV ISTEP 100mA/DIV VOUT 500mV/DIV AC-COUPLED VOUT 500mV/DIV AC-COUPLED IL1 200mA/DIV IL1 200mA/DIV 100s/DIV 100s/DIV 8580 F03a (3a) Transient Response Shows Excessive Ringing 8580 F03b (3b) Transient Response Is Better ISTEP 100mA/DIV VOUT 500mV/DIV AC-COUPLED IL1 200mA/DIV 100s/DIV 8580 F03c (3c) Transient Response Is Well Damped Figure 3. Transient Response L1 15H VIN 5V D1 VOUT 12V 200mA 10k VIN CIN 2.2F SW SHDN FBX RFBX 130k COUT 4.7F LT8580 SYNC RT VC GND RT 56.2k RC 6.04k SS CSS 0.22F CC 3.3nF CF 47pF 8580 F04 Figure 4. 1.5MHz, 5V to 12V Boost Converter Rev. B 12 For more information www.analog.com LT8580 APPLICATIONS INFORMATION As with any feedback loop, identifying the gain and phase contribution of the various elements in the loop is critical. Figure 5 shows the key equivalent elements of a boost converter. Because of the fast current control loop, the power stage of the IC, inductor and diode have been replaced by a combination of the equivalent transconductance amplifier gmp and the current controlled current source which converts IVIN to (VIN/VOUT) * IVIN. gmp acts as a current source where the peak input current, IVIN, is proportional to the VC voltage. is the efficiency of the switching regulator, and is typically about 85%. From Figure 5, the DC gain, poles and zeros can be calculated as follows: Output Pole: P1= 2 2 * * RL * COUT Error Amp Pole: P2 = Error Amp Zero: A DC = A OL (0) = VC * VIN *IVIN VOUT VC CF RC CC RO + gma RESR CPL 1.204V REFERENCE R2 - Z2 = RHP Zero: Z3 = RL COUT R1 FBX VOUT IVIN * VFBX VOUT = 1 2 * * RESR * COUT 2 VIN * RL 2 4 * * VOUT *L f High Frequency Pole: P3 > S 3 8580 F05 Phase Lead Zero: R2 CC: COMPENSATION CAPACITOR COUT: OUTPUT CAPACITOR CPL: PHASE LEAD CAPACITOR CF: HIGH FREQUENCY FILTER CAPACITOR gma: TRANSCONDUCTANCE AMPLIFIER INSIDE IC gmp: POWER STAGE TRANSCONDUCTANCE AMPLIFIER RC: COMPENSATION RESISTOR RL: OUTPUT RESISTANCE DEFINED AS VOUT DIVIDED BY ILOAD(MAX) RO: OUTPUT RESISTANCE OF gma R1, R2: FEEDBACK RESISTOR DIVIDER NETWORK RESR: OUTPUT CAPACITOR ESR : CONVERTER EFFICIENCY (~85% AT HIGHER CURRENTS) Figure 5. Boost Converter Equivalent Model VC * VIN ESR Zero: IVIN 0.5R2 R * L* VOUT 2 R1+ 0.5R2 VOUT * VFBX - + 2 * * R C * CC (Breaking Loop at FBX Pin) ( gma * R 0 ) * gmp * h * IVIN 1 Z1= DC Gain: Note that the maximum output currents of gmp and gma are finite. The limits for gmp are in the Electrical Characteristics section (switch current limit), and gma is nominally limited to about +15A and -17A. gmp 1 2 * * [R O + R C ] * C C Z4 = Phase Lead Pole: P4 = 1 2 * * R1 * CPL 1 R2 2 *C 2** PL R2 R1+ 2 R1 * Error Amp Filter Pole: P5 = 2** 1 RC * RO RC + RO C , CF < C 10 * CF The current mode zero (Z3) is a right-half plane zero which can be an issue in feedback control design, but is manageable with proper external component selection. Rev. B For more information www.analog.com 13 LT8580 APPLICATIONS INFORMATION Using the circuit in Figure 4 as an example, Table 3 shows the parameters used to generate the bode plot shown in Figure 6. 140 0 120 -90 80 -135 60 -180 54 AT 14kHz GAIN -225 20 -270 0 -315 -20 10 100 1k 10k FREQUENCY (Hz) 100k PHASE (DEG) GAIN (dB) 100 40 Diode Selection -45 PHASE -360 1M 8580 F06 Figure 6. Bode Plot for Example Boost Converter Table 3. Bode Plot Parameters PARAMETER In Figure 6, the phase is -126 when the gain reaches 0dB giving a phase margin of 54. The crossover frequency is 14kHz, which is more than three times lower than the frequency of the RHP zero to achieve adequate phase margin. VALUE UNITS COMMENT RL 60 W Application Specific COUT 4.7 F Application Specific RESR 10 mW Application Specific RO 300 kW Not Adjustable CC 3300 pF Adjustable CF 47 pF Optional/Adjustable CPL 0 pF Optional/Adjustable RC 6.04 kW Adjustable R1 130 kW Adjustable R2 14.6 kW Not Adjustable VOUT 12 V Application Specific VIN 5 V Application Specific gma 200 mho Not Adjustable gmp 7 mho Not Adjustable L 15 H Application Specific fS 1.5 MHz Adjustable Schottky diodes, with their low forward-voltage drops and fast switching speeds, are recommended for use with the LT8580. For applications where VR (see Tables 4, 5 and 6) < 40V, the Diodes, Inc. SBR1V40LP is a good choice. Where VR > 40V, the Diodes Inc. DFLS1100 works well. These diodes are rated to handle an average forward current of 1A. Oscillator The operating frequency of the LT8580 can be set by the internal free-running oscillator. When the SYNC pin is driven low (< 0.4V), the frequency of operation is set by a resistor from RT to ground. An internally trimmed timing capacitor resides inside the IC. The oscillator frequency is calculated using the following formula: fOSC = 85.5 (R T + 1) where fOSC is in MHz and RT is in k. Conversely, RT (in k) can be calculated from the desired frequency (in MHz) using: RT = 85.5 fOSC -1 Clock Synchronization The operating frequency of the LT8580 can be synchronized to an external clock source. To synchronize to the external source, simply provide a digital clock signal into the SYNC pin. The LT8580 will operate at the SYNC clock frequency. The LT8580 will revert to the internal free-running oscillator clock after SYNC is driven low for a few free-running clock periods. Rev. B 14 For more information www.analog.com LT8580 APPLICATIONS INFORMATION Driving SYNC high for an extended period of time effectively stops the operating clock and prevents latch SR1 from becoming set (see the Block Diagram). As a result, the switching operation of the LT8580 will stop. The duty cycle of the SYNC signal must be between 35% and 65% for proper operation. Also, the frequency of the SYNC signal must meet the following two criteria: (1) SYNC may not toggle outside the frequency range of 200kHz to 1.5MHz unless it is stopped low to enable the free-running oscillator. (2) The SYNC frequency can always be higher than the free-running oscillator frequency, fOSC , but should not be less than 25% below fOSC . Operating Frequency Selection There are several considerations in selecting the operating frequency of the converter. The first is staying clear of sensitive frequency bands, which cannot tolerate any spectral noise. For example, in products incorporating RF communications, the 455kHz IF frequency is sensitive to any noise, therefore switching above 600kHz is desired. Some communications have sensitivity to 1.1MHz, and in that case, a 1.5MHz switching converter frequency may be employed. The second consideration is the physical size of the converter. As the operating frequency goes up, the inductor and filter capacitors go down in value and size. The trade-off is efficiency, since the switching losses due to NPN base charge (see Thermal Calculations), Schottky diode charge, and other capacitive loss terms increase proportionally with frequency. This capacitor is slowly charged to ~2.1V by an internal 280k resistor once the part is activated. SS pin voltages below ~1.1V reduce the internal current limit. Thus, the gradual ramping of the SS voltage also gradually increases the current limit as the capacitor charges. This, in turn, allows the output capacitor to charge gradually toward its final value while limiting the start-up current. In the event of a commanded shutdown or lockout (SHDN pin), internal undervoltage lockout (UVLO) or a thermal lockout, the soft-start capacitor is automatically discharged to ~200mV before charging resumes, thus assuring that the soft-start occurs after every reactivation of the chip. Shutdown The SHDN pin is used to enable or disable the chip. For most applications, SHDN can be driven by a digital logic source. Voltages above 1.4V enable normal active operation. Voltages below 300mV will shutdown the chip, resulting in extremely low quiescent current. While the SHDN voltage transitions through the lockout voltage range (0.3V to 1.21V) the power switch is disabled and the SR2 latch is set (see the Block Diagram). This causes the soft-start capacitor to begin discharging, which continues until the capacitor is discharged and active operation is enabled. Although the power switch is disabled, SHDN voltages in the lockout range do not necessarily reduce quiescent current until the SHDN voltage is near or below the shutdown threshold. Also note that SHDN can be driven above VIN or VOUT as long as the SHDN voltage is limited to less than 40V. Soft-Start The start-up current can be limited by connecting an external capacitor (typically 100nF to 1F) to the SS pin. ACTIVE (NORMAL OPERATION) 1.40V (HYSTERESIS AND TOLERANCE) 1.21V SHDN (V) The LT8580 contains a soft-start circuit to limit peak switch currents during start-up. High start-up current is inherent in switching regulators in general since the feedback loop is saturated due to VOUT being far from its final value. The regulator tries to charge the output capacitor as quickly as possible, which results in large peak currents. LOCKOUT (POWER SWITCH OFF, SS CAPACITOR DISCHARGED) 0.3V SHUTDOWN (LOW QUIESCENT CURRENT) 0.0V 8580 F07 Figure 7. Chip States vs SHDN Voltage Rev. B For more information www.analog.com 15 LT8580 APPLICATIONS INFORMATION Configurable Undervoltage Lockout Figure 8 shows how to configure an undervoltage lockout (UVLO) for the LT8580. Typically, UVLO is used in situations where the input supply is current-limited, has a relatively high source resistance, or ramps up/down slowly. A switching regulator draws constant power from the source, so source current increases as source voltage drops. This looks like a negative resistance load to the source and can cause the source to current-limit or latch low under low source voltage conditions. UVLO prevents the regulator from operating at source voltages where these problems might occur. The shutdown pin comparator has voltage hysteresis with typical thresholds of 1.31V (rising) and 1.27V (falling). Resistor RUVLO2 is optional. RUVLO2 can be included to reduce the overall UVLO voltage variation caused by variations in SHDN pin current (see the Electrical Characteristics). A good choice for RUVLO2 is 10k 1%. After choosing a value for RUVLO2 , RUVLO1 can be determined from either of the following: RUVLO1 = + VIN - 1.31V 1.31V + 12A RUVLO2 RUVLO1 = 3.5V - 1.27V = 187k 1.27V + 12A To activate the LT8580 for VIN voltages greater than 4.5V using the double resistor configuration, choose RUVLO2 = 10k and: RUVLO1 = 4.5V - 1.31V = 22.1 k 1.31V + 12A 10k Internal Undervoltage Lockout The LT8580 monitors the VIN supply voltage in case VIN drops below a minimum operating level (typically about 2.35V). When VIN is detected low, the power switch is deactivated, and while sufficient VIN voltage persists, the soft-start capacitor is discharged. After VIN is detected high, the power switch will be reactivated and the softstart capacitor will begin charging. Thermal Considerations or RUVLO1 = For example, to disable the LT8580 for VIN voltages below 3.5V using the single resistor configuration, choose: - VIN - 1.27V 1.27V + 12A RUVLO2 where VIN+ and VIN- are the VIN voltages when rising or falling, respectively. For the LT8580 to deliver its full output power, it is imperative that a good thermal path be provided to dissipate the heat generated within the package. This is accomplished by taking advantage of the thermal pad on the underside of the IC. It is recommended that multiple vias in the printed circuit board be used to conduct heat away from the IC and into a copper plane with as much area as possible. VIN VIN 1.3V RUVLO1 SHDN - ACTIVE/ LOCKOUT + 12A AT 1.3V RUVLO2 (OPTIONAL) GND 8580 F08 Figure 8. Configurable UVLO Rev. B 16 For more information www.analog.com LT8580 APPLICATIONS INFORMATION Thermal Lockout PSW = 117mW If the die temperature reaches approximately 165C, the part will go into thermal lockout, the power switch will be turned off and the soft-start capacitor will be discharged. The part will be enabled again when the die temperature has dropped by ~5C (nominal). PBAC = 169mW Thermal Calculations Power dissipation in the LT8580 chip comes from four primary sources: switch I2R loss, NPN base drive (AC), NPN base drive (DC), and additional input current. The following formulas can be used to approximate the power losses. These formulas assume continuous mode operation, so they should not be used for calculating efficiency in discontinuous mode or at light load currents. V *I Average Input Current: IIN = OUT OUT VIN * h Switch Conduction Loss: PSW = (DC)(IIN )(VSW ) Base Drive Loss (AC): PBAC = 20ns(IIN )(VOUT )(f) Base Drive Loss (DC): PBDC = (VIN )(IIN )(DC) 40 where: VSW = switch on voltage (see Typical Performance Characteristics for Switch Saturation Voltage) DC = duty cycle (see the Power Switch Duty Cycle section for formulas) h = power conversion efficiency (typically 85% at high currents) Example: boost configuration, VIN = 5V, VOUT = 12V, IOUT = 0.2A, f = 1.25MHz, VD = 0.5V: DC = 62.0% PINP = 30mW Total LT8580 power dissipation (PTOT) = 361mW Thermal resistance for the LT8580 is influenced by the pres ence of internal, topside or backside planes. To calculate die temperature, use the appropriate thermal resistance number and add in worst-case ambient temperature: TJ = TA + JA * PTOT where TJ = junction temperature, TA = ambient temperature, and JA is the thermal resistance from the silicon junction to the ambient air. The published JA value is 43C/W for the 3mm x 3mm DFN package and 35C/W to 40C/W for the MSOP exposed pad package. In practice, lower JA values can be obtained if the board layout uses ground as a heat sink. For instance, thermal resistances of 34.7C/W for the DFN package and 22.5C/W for the MSOP package were obtained on a board designed with large ground planes. VIN Ramp Rate Input Power Loss: PINP = 6mA (VIN ) IIN = 0.56A PBDC = 44mW While initially powering a switching converter application, the VIN ramp rate should be limited. High VIN ramp rates can cause excessive inrush currents in the passive components of the converter. This can lead to current and/or voltage overstress and may damage the passive components or the chip. Ramp rates less than 500mV/s, depending on component parameters, will generally prevent these issues. Also, be careful to avoid hot-plugging. Hot-plugging occurs when an active voltage supply is "instantly" connected or switched to the input of the converter. Hot-plugging results in very fast input ramp rates and is not recommended. Finally, for more information, refer to Linear application note AN88, which discusses voltage overstress that can occur when an inductive source impedance is hot-plugged to an input pin bypassed by ceramic capacitors. Rev. B For more information www.analog.com 17 LT8580 APPLICATIONS INFORMATION Layout Hints As with all high frequency switchers, when considering layout, care must be taken to achieve optimal electrical, thermal and noise performance. One will not get advertised performance with a careless layout. For maximum efficiency, switch rise and fall times are typically in the 10ns to 20ns range. To prevent noise, both radiated and conducted, the high speed switching current path, shown in Figure 9, must be kept as short as possible. This is implemented in the suggested layout of a boost configuration in Figure 10. Shortening this path will also reduce the parasitic trace inductance. At switch-off, this parasitic inductance produces a flyback spike across the LT8580 switch. When operating at higher currents and output voltages, with poor layout, this spike can generate voltages across the LT8580 that may exceed its absolute maximum rating. A ground plane should also be used under the switcher circuitry to prevent interplane coupling and overall noise. The VC and FBX components should be kept as far away as practical from the switch node. The ground for these components should be separated from the switch current path. Failure to do so can result in poor stability or subharmonic oscillation. Board layout also has a significant effect on thermal resistance. The exposed package ground pad is the copper plate that runs under the LT8580 die. This is a good thermal path for heat out of the package. Soldering the pad onto the board reduces die temperature and increases the power capability of the LT8580. Provide as much copper area as possible around this pad. Adding multiple feedthroughs around the pad to the ground plane will also help. Figure 10 and Figure 11 show the recommended component placement for the boost and SEPIC configurations, respectively. Layout Hints for Inverting Topology Figure 12 shows recommended component placement for the dual inductor inverting topology. Input bypass capacitor, C1, should be placed close to the LT8580, as shown. The load should connect directly to the output capacitor, C2, for best load regulation. The local ground may be tied into the system ground plane at the C3 ground terminal. The cut ground copper at D1's cathode is essential to obtain low noise. This important layout issue arises due to the chopped nature of the currents flowing in Q1 and D1. If they are both tied directly to the ground plane before being combined, switching noise will be introduced into the ground plane. It is almost impossible to get rid of this noise, once present in the ground plane. The solution is to tie D1's cathode to the ground pin of the LT8580 before the combined currents are dumped in the ground plane as drawn in Figure 2, Figure 13 and Figure 14. This single layout technique can virtually eliminate high frequency "spike" noise, so often present on switching regulator outputs. DIFFERENCES FROM LT3580 L1 D1 C1 VOUT SW LT8580 VIN HIGH FREQUENCY SWITCHING PATH LT8580 is very similar to LT3580. However, LT8580 does deviate from LT3580 in a few areas: * 65V, 1A switch * 40V VIN and SHDN absolute maximum rating * FB renamed to FBX C2 LOAD * 5V FBX absolute maximum rating GND 8580 F09 Figure 9. High Speed "Chopped" Switching Path for Boost Topology Rev. B 18 For more information www.analog.com LT8580 APPLICATIONS INFORMATION GND GND 1 1 8 9 2 C1 6 4 L1 VIN 7 3 VIN 2 C1 SYNC 5 L1 SHDN 8580 F10 VOUT D1 6 4 5 SHDN VIAS TO GROUND PLANE REQUIRED TO IMPROVE THERMAL PERFORMANCE C3 8580 F11 VOUT Figure 10. Suggested Component Placement for Boost Topology (Both DFN and MSOP Packages. Not to Scale). Pin 9 (Exposed Pad) Must Be Soldered Directly to the Local Ground Plane for Adequate Thermal Performance. Multiple Vias to Additional Ground Planes Will Improve Thermal Performance 7 3 C2 L2 VIAS TO GROUND PLANE REQUIRED TO IMPROVE THERMAL PERFORMANCE C2 SYNC SW SW D1 8 9 Figure 11. Suggested Component Placement for SEPIC Topology (Both DFN And MSOP Packages. Not to Scale). Pin 9 (Exposed Pad) Must Be Soldered Directly to the Local Ground Plane for Adequate Thermal Performance. Multiple Vias to Additional Ground Planes Will Improve Thermal Performance GND 1 2 C1 VIN L1 8 9 SYNC 7 3 6 4 5 SHDN SW C2 L2 D1 VIAS TO GROUND PLANE REQUIRED TO IMPROVE THERMAL PERFORMANCE C3 VOUT 8580 F12 Figure 12. Suggested Component Placement for Inverting Topology (Both DFN and MSOP Packages. Not to Scale). Note Cut in Ground Copper at Diode's Cathode. Pin 9 (Exposed Pad) Must be Soldered Directly to Local Ground Plane for Adequate Thermal Performance. Multiple Vias to Additional Ground Planes Will Improve Thermal Performance Rev. B For more information www.analog.com 19 LT8580 APPLICATIONS INFORMATION -(VIN + VOUT) VCESAT L1 SW VIN L2 SWX -VOUT D1 Q1 C1 + + C2 C3 RLOAD 8580 F13 Figure 13. Switch-On Phase of an Inverting Converter. L1 and L2 Have Positive dI/dt VIN + VOUT+ VD L1 SW VIN Q1 C2 L2 SWX -VOUT D1 C1 + + VD C3 RLOAD 8580 F14 Figure 14. Switch-Off Phase of an Inverting Converter. L1 and L2 Currents Have Negative dI/dt Rev. B 20 For more information www.analog.com LT8580 APPLICATIONS INFORMATION BOOST CONVERTER COMPONENT SELECTION L1 15H VIN 5V D1 VOUT 12V 200mA 10k VIN CIN 2.2F SW SHDN FBX RT COUT 4.7F RC 6.04k SS RT 56.2k CSS 0.22F CC 3.3nF DC MIN = Step 3: L1 VC GND PARAMETERS/EQUATIONS Step 1: Pick VIN, VOUT, and fOSC to calculate equations below Inputs Step 2: VOUT - VIN(MIN) + 0.5 V DC MAX = DC VOUT + 0.5 V - 0.4 V RFBX 130k LT8580 SYNC Table 4. Boost Design Equations L TYP = (VIN(MIN) - 0.4V ) * DC MAX f OSC * 0.3 A CF 47pF L MIN = 8580 F15 (VIN(MIN) - 0.4V ) * (2 * DC MAX - 1) (VIN(MIN) - 0.4V ) * DC MAX L MAX1 = The LT8580 can be configured as a boost converter as in Figure 15. This topology allows for positive output voltages that are higher than the input voltage. A single feedback resistor sets the output voltage. For output voltages higher than 60V, see the Charge Pump Aided Regulators section. L MAX2 = Table 4 is a step-by-step set of equations to calculate component values for the LT8580 when operating as a boost converter. Input parameters are input and output voltage, and switching frequency (VIN, VOUT and fOSC respectively). Refer to the Applications Information section for further information on the design equations presented in Table 4. VIN = Input Voltage VOUT = Output Voltage DC = Power Switch Duty Cycle fOSC = Switching Frequency (2) (3) fOSC * 0.08 A (VIN(MAX) - 0.4V ) * DC MIN fOSC * 0.08 A (4) *Solve equations 1 to 4 for a range of L values *The minimum of the L value range is the higher of LTYP and LMIN *The maximum of the L value range is the lower of LMAX1 and LMAX2. Step 4: IRIPPLE IRIPPLE(MIN) = IRIPPLE(MAX) = Step 5: IOUT (VIN(MIN) - 0.4V ) * DC MAX fOSC * L 1 (VIN(MAX) - 0.4V ) * DC MIN fOSC * L 1 IRIPPLE(MIN) IOUT(MIN) = 1A - * (1- DC MAX ) 2 IRIPPLE(MAX) IOUT(MAX) = 1A - * (1- DC MIN ) 2 Step 6: VR > VOUT; IAVG > IOUT D1 Step 7: IOUT * DC MAX C OUT COUT f OSC * 0.005 * VOUT Step 8: CIN C IN C VIN + C PWR 1A * DC MAX 40 * f OSC * 0.005 * VIN(MIN) IOUT = Maximum Average Output Current IRIPPLE = Inductor Ripple Current (1) 1.25 * (DC MAX - 300ns * fOSC ) * fOSC * (1 - DC MAX ) Figure 15. Boost Converter: The Component Values and Voltages Given Are Typical Values for a 1.5MHz, 5V to 12V Boost Variable Definitions: VOUT - VIN(MAX) + 0.5 V VOUT + 0.5 V - 0.4 V + IRIPPLE(MAX) 8 * f OSC * 0.005 * VIN(MAX) *Refer to the Capacitor Selection Section for definition of CVIN and CPWR Step 9: RFBX V - 1.204V R FBX = OUT 83.3A Step 85.5 RT = -1 ; f OSC in M Hz and R T in k 10: f OSC RT Note 1: This table uses 1A for the peak switch current. Refer to the Electrical Characteristics Table and Typical Performance Characteristics plots for the peak switch current at an operating duty cycle. Note 2: The final values for COUT and CIN may deviate from the previous equations in order to obtain desired load transient performance. Rev. B For more information www.analog.com 21 LT8580 APPLICATIONS INFORMATION Table 5. SEPIC Design Equations SEPIC CONVERTER COMPONENT SELECTION (COUPLED OR UNCOUPLED INDUCTORS) * VIN 9V TO 16V C1 1F L1 22H VOUT 12V 240mA L2 22H 487k VIN CIN 4.7F D1 * SW SHDN FBX RFBX 130k RT COUT 4.7F VC GND RC 16.2k SS RT 84.5k CSS 0.22F CC 1nF PARAMETERS/EQUATIONS Pick VIN, VOUT and fOSC to calculate equations below Step 3: L CF 22pF VOUT + 0.5 V DC MAX = DC MIN = LT8580 SYNC Step 1: Inputs Step 2: DC VIN(MIN) + VOUT + 0.5 V - 0.4V VOUT + 0.5 V VIN(MAX) + VOUT + 0.5 V - 0.4V L TYP = L MIN = (VIN(MIN) - 0.4V ) * DC MAX (1) f OSC * 0.3 A (VIN(MIN) - 0.4V ) * (2 * DC MAX - 1) 1.25 * (DC MAX - 300ns * f OSC ) * fOSC * (1 - DC MAX ) (2) 8580 F16 Figure 16. SEPIC Converter: The Component Values and Voltages Given Are Typical Values for a 1MHz, 9V to 16V Input to 12V Output SEPIC Converter The LT8580 can also be configured as a SEPIC, as shown in Figure 16. This topology allows for positive output voltages that are lower, equal or higher than the input voltage. Output disconnect is inherently built into the SEPIC topology, meaning no DC path exists between the input and output due to capacitor C1. Table 5 is a step-by-step set of equations to calculate component values for the LT8580 when operating as a SEPIC converter. Input parameters are input and output voltage, and switching frequency (VIN, VOUT and fOSC, respectively). Refer to the Applications Information section for further information on the design equations presented in Table 5. Variable Definitions: VIN = Input Voltage fOSC = Switching Frequency IOUT = Maximum Average Output Current IRIPPLE = Inductor Ripple Current (VIN(MIN) - 0.4V ) * DC MAX f OSC * 0.08 A (3) *Solve equations 1, 2 and 3 for a range of L values *The minimum of the L value range is the higher of LTYP and LMIN *The maximum of the L value range is LMAX *L = L1 = L2 for coupled inductors *L = L1|| L2 for uncoupled inductors Step 4: IRIPPLE IRIPPLE(MIN) = IRIPPLE(MAX) = Step 5: IOUT (VIN(MIN) - 0.4V ) * DC MAX fOSC * L (VIN(MAX) - 0.4V ) * DC MIN fOSC * L IRIPPLE(MIN) IOUT(MIN) = 1A - * (1- DC MAX ) 2 IRIPPLE(MAX) IOUT(MAX) = 1A - * (1- DC MIN) 2 Step 6: D1 Step 7: C1 Step 8: COUT Step 9: CIN VR > VIN + VOUT; IAVG > IOUT C1 1F; VRATING VIN C OUT IOUT(MIN) * DC MAX f OSC * 0.005 * VOUT C IN C VIN + C PWR 1A * DC MAX VOUT = Output Voltage DC = Power Switch Duty Cycle L MAX = 40 * f OSC * 0.005 * VIN(MIN) + IRIPPLE(MAX) 8 * f OSC * 0.005 * V IN(MAX) *Refer to the Capacitor Selection Section for definition of CVIN and CPWR Step 10: RFBX V - 1.204V R FBX = OUT 83.3A Step 11: RT RT = 85.5 f OSC -1 ; f OSC in M Hz and R T in k Note 1: This table uses 1A for the peak switch current. Refer to the Electrical Characteristics Table and Typical Performance Characteristics plots for the peak switch current at an operating duty cycle. Note 2: The final values for COUT, CIN and C1 may deviate from the previous equations in order to obtain desired load transient performance. Rev. B 22 For more information www.analog.com LT8580 APPLICATIONS INFORMATION DUAL INDUCTOR INVERTING CONVERTER COMPONENT SELECTION (COUPLED OR UNCOUPLED INDUCTORS) * VIN 5V TO 40V C1 1F L1 22H 10k VOUT -15V 90mA (VIN = 5V) 210mA (VIN = 12V) 420mA (VIN = 40V) * D1 VIN CIN 4.7F L2 22H SW SHDN FBX RFBX 182k COUT 4.7F LT8580 SYNC RT VC GND RT 113k RC 13.7k SS CSS 0.22F CC 10nF Table 6. Dual Inductor Inverting Design Equations Step 1: Inputs Step 2: DC Pick VIN, VOUT and fOSC to calculate equations below Step 3: L CF 47pF Figure 17. Dual Inductor Inverting Converter: The Component Values and Voltages Given Are Typical Values for a 750kHz Wide Input (5V to 40V) to -15V Inverting Topology Using Coupled Inductors Due to its unique FBX pin, the LT8580 can work in a dual inductor inverting configuration as in Figure 17. Changing the connections of L2 and the Schottky diode in the SEPIC topology results in generating negative output voltages. This solution results in very low output voltage ripple due to inductor L2 being in series with the output. Output disconnect is inherently built into this topology due to the capacitor C1. Table 6 is a step-by-step set of equations to calculate component values for the LT8580 when operating as a dual inductor inverting converter. Input parameters are input and output voltage, and switching frequency (VIN , VOUT and fOSC respectively). Refer to the Applications Information section for further information on the design equations presented in Table 6. Step 4: IRIPPLE VOUT = Output Voltage DC = Power Switch Duty Cycle fOSC = Switching Frequency IOUT = Maximum Average Output Current VIN(MIN) + V OUT + 0.5 V - 0.4 V V OUT + 0.5 V VIN(MAX) + V OUT + 0.5 V - 0.4 V L TYP = L MIN = L MAX = (VIN(MIN) - 0.4V ) * DC MAX Step 5: IOUT (1) f OSC * 0.3 A (VIN(MIN) - 0.4V ) * (2 * DC MAX - 1) 1.25 * (DC MAX - 300ns * f OSC ) * fOSC * (1 - DC MAX ) (VIN(MIN) - 0.4V ) * DC MAX (2) (3) f OSC * 0.08 A *Solve equations 1, 2 and 3 for a range of L values *The minimum of the L value range is the higher of LTYP and LMIN *The maximum of the L value range is LMAX *L = L1 = L2 for coupled inductors *L = L1|| L2 for uncoupled inductors (VIN(MIN) - 0.4V ) * DC MAX IRIPPLE(MIN) = fOSC * L IRIPPLE(MAX) = (VIN(MAX) - 0.4V ) * DC MIN fOSC * L IRIPPLE(MIN) IOUT(MIN) = 1A - * (1- DC MAX ) 2 IRIPPLE(MAX) IOUT(MAX) = 1A - * (1- DC MIN) 2 Step 6: D1 Step 7: C1 Step 8: COUT Step 9: CIN VR > VIN + |VOUT|; IAVG > IOUT C1 1F; VRATING VIN(MAX) + |VOUT| C OUT IRIPPLE(MAX) 8 * f OSC (0.005 * VOUT ) C IN C VIN + C PWR 1A * DC MAX Variable Definitions: VIN = Input Voltage V OUT + 0.5 V DC MAX = DC MIN = 8580 F17 IRIPPLE = Inductor Ripple Current PARAMETERS/EQUATIONS 40 * f OSC * 0.005 * VIN(MIN) Step 10: RFBX Step 11: RT + IRIPPLE(MAX) 8 * f OSC * 0.005 * V IN(MAX) *Refer to the Capacitor Selection Section for definition of CVIN and CPWR R FBX = RT= VOUT + 3m V 85.5 fOSC 83.3A -1 ; fOSC in M Hz and R T in k Note 1: This table uses 1A for the peak switch current. Refer to the Electrical Characteristics Table and Typical Performance Characteristics plots for the peak switch current at an operating duty cycle. Note 2: The final values for COUT, CIN and C1 may deviate from the previous equations in order to obtain desired load transient performance. Rev. B For more information www.analog.com 23 LT8580 TYPICAL APPLICATIONS 1.5MHz, 5V to 12V Output Boost Converter L1 15H VIN 5V D1 VOUT 12V 200mA 10k VIN CIN 2.2F SW SHDN FBX 130k COUT 4.7F LT8580 SYNC RT VC GND 6.04k SS 56.2k 47pF 3.3nF 0.22F 8580 TA02a L1: WURTH 15H WE-LQS 74404054150 D1: DIODES INC. SBR1U40LP CIN: 2.2F, 35V, 0805, X7R COUT : 4.7F, 16V, 0805, X7R Efficiency and Power Loss 90 420 80 380 70 300 60 240 50 180 40 120 EFFICIENCY (%) 480 EFFICIENCY POWER LOSS 30 20 0 POWER LOSS (mW) 100 60 0 200 50 150 100 LOAD CURRENT (mA) 8580 TA02b 50mA to 150mA to 50mA Output Load Step ISTEP 100mA/DIV VOUT 500mV/DIV AC-COUPLED IL1 500mA/DIV 100s/DIV 8580 TA02c Rev. B 24 For more information www.analog.com LT8580 TYPICAL APPLICATIONS 750kHz, -15V Output Inverting Converter Accepts 5V to 40V Input * VIN 5V TO 40V C1 1F L1 22H L2 22H 10k D1 VIN CIN 4.7F VOUT -15V 90mA (VIN = 5V) 210mA (VIN = 12V) 420mA (VIN = 40V) * SW SHDN 182k FBX COUT 4.7F LT8580 SYNC RT VC GND 13.7k SS 47pF 10nF 0.22F 113k 8580 TA03a L1, L2: COILCRAFT 22H MSD7342-223 D1: CENTRAL SEMI CMMSH1-60 CIN: 4.7F, 50V, 1206, X5R COUT : 4.7F, 25V, 1206, X7R C1: 1F, 100V, 0805, X7S 90 640 80 560 70 480 60 400 50 320 40 240 30 160 EFFICIENCY POWER LOSS 20 10 0 50 150 100 LOAD CURRENT (mA) POWER LOSS (mW) EFFICIENCY (%) Efficiency and Power Loss (VIN = 12V) 80 0 200 8580 TA03b 60mA to 160mA to 60mA Output Load Step (VIN = 12V) ISTEP 100mA/DIV VOUT 200mV/DIV AC-COUPLED IL1 + IL2 200mA/DIV 200s/DIV 8580 TA03c Rev. B For more information www.analog.com 25 LT8580 TYPICAL APPLICATIONS 1.2MHz Inverting Converter Generates -48V Output From 12V Input C2 2.2F C1 1F L1 150H VIN 12V 49.9 L2 330H 619k D1 VIN CIN 1F VOUT -48V 70mA SW SHDN 576k FBX COUT 2.2F LT8580 SYNC RT VC GND 20.5k SS 69.8k 47pF 4.7nF 0.33F 8580 TA04a L1: COOPER 150H DR74-151 L2: COOPER 330H DR74-331 D1: DIODES, INC. DFLS1100 CIN: 1F, 50V, 0805, X7R COUT : 2.2F, 100V, 1206, X7R C1: 1F, 100V, 0805, X7S C2: 2.2F, 100V, 1206, X7S 90 1040 80 920 70 800 60 680 50 560 40 440 30 20 320 EFFICIENCY POWER LOSS 0 10 20 30 40 50 LOAD CURRENT (mA) 60 POWER LOSS (mW) EFFICIENCY (%) Efficiency and Power Loss 70 200 8580 TA04b Switching Waveforms Start-Up Waveforms VSW 20V/DIV VSW 20V/DIV VOUT 20mV/DIV AC-COUPLED VOUT 10V/DIV IL1 + IL2 200mA/DIV IL1 + IL2 200mA/DIV 200s/DIV 8580 TA04c 200s/DIV 8580 TA04d Rev. B 26 For more information www.analog.com LT8580 TYPICAL APPLICATIONS VFD (Vacuum Fluorescent Display) Power Supply Switches at 1MHz Danger High Voltage! Operation by High Voltage Trained Personnel Only D5 22 D4 C4 1F 22 L1 68H VIN 9V TO 16V D3 D2 C2 1F VOUT3 180V C5 20mA* 1F VOUT2 120V C3 30mA* 1F D1 VOUT1 60V 60mA* 487k VIN CIN 1F SW SHDN 698k FBX C1 1F LT8580 SYNC RT VC GND 84.5k 22.1k SS 330pF 0.47F 4.7nF 8580 TA05a *MAX TOTAL OUTPUT POWER 3.5W L1: WURTH 68H WE-LQS 74404084680 D1-D5: DIODES, INC. DFLS1100 CIN: 1F, 100V, 1206, X7R C1-C5: 1F, 100V, 1206, X7S 90 960 80 880 70 800 60 720 50 640 40 560 30 20 0.5 1 1.5 2 2.5 OUTPUT POWER (W) 3 VOUT3 50V/DIV VOUT2 50V/DIV VOUT1 50V/DIV IL1 200mA/DIV 480 EFFICIENCY POWER LOSS 0 Start-Up Waveforms POWER LOSS (mW) EFFICIENCY (%) Efficiency and Power Loss (VIN = 12V with Load on VOUT3) 3.5 400 2ms/DIV 8580 TA05c 8580 TA05b Rev. B For more information www.analog.com 27 LT8580 TYPICAL APPLICATIONS 550kHz SEPIC Converter Generates 24V from 15V to 30V Input * VIN 15V TO 30V C1 1F L1 47H D1 L2 47H 1M VIN SW SHDN * CIN 2.2F VOUT 24V 195mA (VIN = 15V) 300mA (VIN = 24V) 274k FBX COUT 4.7F LT8580 SYNC RT VC GND 12.7k SS 154k 22pF 3.3nF 0.1F 8580 TA06a L1, L2: COILCRAFT 47H MSD7342-473 D1: DIODES INC. DFLS1100 CIN: 2.2F, 35V, 0805, X7R COUT : 4.7F, 35V, 1206, X7R C1: 1F, 100V, 0805, X7S 90 1400 80 1250 70 1100 60 950 50 800 40 650 500 30 EFFICIENCY POWER LOSS 20 10 0 50 200 100 150 LOAD CURRENT (mA) 250 POWER LOSS (mW) EFFICIENCY (%) Efficiency and Power Loss (VIN = 24V) 350 200 300 8580 TA06b Transient Response with 100mA to 225mA to 100mA Output Load Step (VIN = 24V) ISTEP 100mA/DIV VOUT 500mV/DIV AC-COUPLED IL1 + IL2 500mA/DIV 100s/DIV 8580 TA06c Rev. B 28 For more information www.analog.com LT8580 PACKAGE DESCRIPTION DD Package 8-Lead Plastic DFN (3mm x 3mm) (Reference LTC DWG # 05-08-1698 Rev C) 0.70 0.05 3.5 0.05 1.65 0.05 2.10 0.05 (2 SIDES) PACKAGE OUTLINE 0.25 0.05 0.50 BSC 2.38 0.05 RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS APPLY SOLDER MASK TO AREAS THAT ARE NOT SOLDERED PIN 1 TOP MARK (NOTE 6) 0.200 REF 3.00 0.10 (4 SIDES) R = 0.125 TYP 5 0.40 0.10 8 1.65 0.10 (2 SIDES) 0.75 0.05 4 0.25 0.05 1 (DD8) DFN 0509 REV C 0.50 BSC 2.38 0.10 0.00 - 0.05 BOTTOM VIEW--EXPOSED PAD NOTE: 1. DRAWING TO BE MADE A JEDEC PACKAGE OUTLINE M0-229 VARIATION OF (WEED-1) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON TOP AND BOTTOM OF PACKAGE Rev. B For more information www.analog.com 29 LT8580 PACKAGE DESCRIPTION MS8E Package 8-Lead Plastic MSOP, Exposed Die Pad (Reference LTC DWG # 05-08-1662 Rev K) BOTTOM VIEW OF EXPOSED PAD OPTION 1.88 (.074) 1 1.88 0.102 (.074 .004) 0.29 REF 1.68 (.066) 0.889 0.127 (.035 .005) 0.05 REF 5.10 (.201) MIN DETAIL "B" CORNER TAIL IS PART OF DETAIL "B" THE LEADFRAME FEATURE. FOR REFERENCE ONLY NO MEASUREMENT PURPOSE 1.68 0.102 3.20 - 3.45 (.066 .004) (.126 - .136) 8 3.00 0.102 (.118 .004) (NOTE 3) 0.65 (.0256) BSC 0.42 0.038 (.0165 .0015) TYP 8 7 6 5 0.52 (.0205) REF RECOMMENDED SOLDER PAD LAYOUT 0.254 (.010) 3.00 0.102 (.118 .004) (NOTE 4) 4.90 0.152 (.193 .006) DETAIL "A" 0 - 6 TYP GAUGE PLANE 0.53 0.152 (.021 .006) DETAIL "A" 1 2 3 4 1.10 (.043) MAX 0.86 (.034) REF 0.18 (.007) SEATING PLANE 0.22 - 0.38 (.009 - .015) TYP 0.65 (.0256) NOTE: BSC 1. DIMENSIONS IN MILLIMETER/(INCH) 2. DRAWING NOT TO SCALE 3. DIMENSION DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 4. DIMENSION DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. INTERLEAD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.152mm (.006") PER SIDE 5. LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.102mm (.004") MAX 6. EXPOSED PAD DIMENSION DOES INCLUDE MOLD FLASH. MOLD FLASH ON E-PAD SHALL NOT EXCEED 0.254mm (.010") PER SIDE. 0.1016 0.0508 (.004 .002) MSOP (MS8E) 0213 REV K Rev. B 30 For more information www.analog.com LT8580 REVISION HISTORY REV DATE DESCRIPTION A 09/16 Changed Minimum On-Time in the Electrical Characteristics table to typical room value instead of worst case. 3 Added Minimum On-Time vs Temperature graph. 5 Added text and equations explaining minimum on-time. 10, 11 Adjusted RC, RL, RO, gma and resultant gain and phase margin numbers and plot to better reflect applications and the Electrical Characteristics table. 11, 14 Corrected LMIN equation. 11/19 9 Clarified inductor paragraph in the Applications Information section. Clarified Thermal Calculations section. B PAGE NUMBER 17 21, 22, 23 Clarified the Related Parts table. 32 Add AEC-Q100 Qualification in Progress 1 Add #W Part Numbers 2 Rev. B Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license For is granted implication or otherwise under any patent or patent rights of Analog Devices. more by information www.analog.com 31 LT8580 TYPICAL APPLICATION 12V Battery Stabilizer Survives 40V Transients L1 22H D1 FBX 130k COUT 4.7F LT8580 SYNC RT VC GND 84.5k 16.2k SS 22pF 0.22F 90 800 80 700 70 600 60 500 50 400 40 300 30 200 EFFICIENCY POWER LOSS 20 1nF 8580 TA07a 10 0 L1, L2: WURTH 22H WE-DD 744877220 D1: DIODES INC. DFLS1100 CIN: 4.7F, 50V, 1206, X7R COUT : 4.7F, 25V, 1206, X7R C1: 1F, 100V, 0805, X7S 40 160 80 120 LOAD CURRENT (mA) 200 POWER LOSS (mW) SHDN * SW VIN CIN 4.7F VOUT 12V 240mA L2 22H 487k Efficiency and Power Loss (VIN = 12V) EFFICIENCY (%) * VIN 9V TO 16V UP TO 40V TRANSIENT C1 1F 100 0 240 8580 TA07b RELATED PARTS PART NUMBER DESCRIPTION COMMENTS LT1613 550mA (ISW), 1.4MHz High Efficiency Step-Up DC/DC Converter VIN: 0.9V to 10V, VOUT(MAX) = 34V, IQ = 3mA, ISD < 1A, ThinSOT Package LT1618 1.5A (ISW), 1.4MHz High Efficiency Step-Up DC/DC Converter VIN: 1.6V to 18V, VOUT(MAX) = 35V, IQ = 1.8mA, ISD < 1A, MS10, 3mm x 3mm DFN Packages LT1930/LT1930A 1A (ISW), 1.2MHz/2.2MHz High Efficiency Step-Up DC/DC Converter VIN: 2.6V to 16V, VOUT(MAX) = 34V, IQ = 4.2mA/5.5mA, ISD < 1A, ThinSOT Package LT1935 2A (ISW), 40V, 1.2MHz High Efficiency Step-Up DC/DC Converter VIN: 2.3V to 16V, VOUT(MAX) = 38V, IQ = 3mA, ISD < 1A, ThinSOT Package LT1944/LT1944-1 Dual Output 350mA (ISW), Constant Off-Time, High Efficiency Step-Up DC/DC Converter VIN: 1.2V to 15V, VOUT(MAX) = 34V, IQ = 20A, ISD < 1A, MS10 Package LT1946/LT1946A 1.5A (ISW), 1.2MHz/2.7MHz High Efficiency Step-Up DC/DC Converter VIN: 2.6V to 16V, VOUT(MAX) = 34V, IQ = 3.2mA, ISD < 1A, MS8E Package LT3467 1.1A (ISW), 1.3MHz High Efficiency Step-Up DC/DC Converter VIN: 2.4V to 16V, VOUT(MAX) = 40V, IQ = 1.2mA, ISD < 1A, ThinSOT, 2mm x 3mm DFN Packages LT3477 42V, 3A, 3.5MHz Boost, Buck-Boost, Buck LED Driver VIN: 2.5V to 25V, VOUT(MAX) = 40V, Analog/PWM, ISD < 1A, QFN, TSSOP-20E Packages LT3479 3A Full-Featured DC/DC Converter with Soft-Start and Inrush Current Protection VIN: 2.5V to 24V, VOUT(MAX) = 40V, IQ = 5mA, ISD < 1A, DFN, TSSOP Packages LT3580 2A (ISW), 42V, 2.5MHz, High Efficiency Step-Up DC/DC Converter VIN: 2.5V to 32V, VOUT(MAX) = 42V, IQ = 1mA, ISD = <1A, 3mm x 3mm DFN-8, MSOP-8E LT3581 3.3A (ISW), 42V, 2.5MHz, High Efficiency Step-Up DC/DC Converter VIN: 2.5V to 22V, VOUT(MAX) = 42V, IQ = 1.9mA, ISD = <1A, 4mm x 3mm DFN-14, MSOP-16E LT3579 6A (ISW), 42V, 2.5MHz, High Efficiency, Step-Up DC/DC Converter VIN: 2.5V to 16V, VOUT(MAX) = 42V, IQ = 1.9mA, ISD = <1A, 4mm x 5mm QFN-20, TSSOP-20 LT8582 Dual Channel, 3A (ISW), 42V, 2.5MHz, High Efficiency Step-Up DC/DC Converter VIN: 2.5V to 22V, VOUT(MAX) = 42V, IQ = 2.1mA, ISD = <1A, 4mm x 7mm DFN-24 Rev. B 32 11/19 www.analog.com For more information www.analog.com ANALOG DEVICES, INC. 2014-2019