Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP Epitaxial Planar Silicon Transistor
General Driver Applications
Ordering number:ENN3236
2SB1405
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41504TN (PC)/O1598HA (KT)/O269MO, TS No.3236–1/3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2064A
[2SB1405]
Features
· Darlington connection.
· High DC current gain.
· Large current capacity, wide ASO.
˚C
˚C
Electrical Characteristics at Ta = 25˚C
1 : Emitter
2 : Collector
3 : Base
SANYO : NMP
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 08–V
egatloVrettimE-ot-rotcelloCV
OEC 05–V
egatloVesaB-ot-rettimEV
OBE 01–V
tnerruCrotcelloCI
C7.0–A
)esluP(tnerruCrotcelloCI
PC 2–A
noitapissiDrotcelloCP
C1W
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V04–=E0=001–An
tnerruCffotuCrettimEI
OBE VBE I,V8–=C0=001–An
niaGtnerruCCD hEF 1V
EC I,V2–=CAm05–=0005
hEF 2V
EC I,V2–=CAm005–=0003
tcudorPhtdiwdnaB-niaGf
TVEC I,V5–=CAm05–=071zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01–=81Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am001–=BAm1.0–=8.0–2.1–V
egatloVnoitarutaSrettimE-ot-esaBV
)tas(EB ICI,Am001–=BAm1.0–=4.1–0.2–V
6.9
0.6
0.5
4.5
1.01.0
0.9
2.5
1.45 1.0
0.45
4.0 1.0
2.54
2.54
123
Continued on next page.
2SB1405
No.3236–2/3
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
egatloVnwodkaerBesaB-ot-rotcelloCV
OBC)RB( ICI,Aµ01–=E0=08–V
egatloVnwodkaerBrettimE-ot-rotcelloCV
OEC)RB( ICR,Am1–=EB =∞05–V
egatloVnwodkaerBesaB-ot-rettimEV
OBE)RB( IEI,Aµ01–=C0=01–V
Electrical Connection
Continued from preceding page.
B
C
E
ITR09665
IC -- VBE
0
--
0.4
--
0.8
--
1.2
--
1.6
--
2.0
--
2.4
0
--
200
--
400
--
600
--
800
--
1000
VCE=--2V
Ta=75
°C
25
°C
--25
°C
ITR09666
hFE -- IC
--
10 23352355
--
100
--
1000 2
7
100000
10000
3
2
5
7
3
2
5
VCE=--2V
Ta=75
°C
25°C
ITR09664
IC -- VCE
0
--
1
--
2
--
3
--
4
--
7
--
5
--
6
0
--
200
--
100
--
400
--
300
--
500
--
600
--
800
--
700
IB=0
--
10
--
100
23 5 23 535 2
--
1000
7
--
1.0
--
10
5
7
5
3
2
ITR09668
VCE(sat) -- IC
IC / IB=1000
Ta=
--
25
°C
25°C
75
°C
ITR09669
f=1MHz
--
1.0
--
10
23 5 23 57
10
7
100
5
7
5
3
2
ITR09667
Cob -- VCB
--
10µA
--
5µA
--
25µA
--
20µA
--15µA
--30µA
--
35µA
--25°C
--
10
--
100
23 5 23 535 2
--
1000
7
--
1.0
--
10
5
7
5
3
2
VBE(sat) -- IC
IC / IB=1000
Ta=
--
25°C
25°C
75
°C
Collector Current, IC–mA
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–mA
Base-to-Emitter Voltage, VBE –V
DC Current Gain, hFE
Collector Current, IC–mA
Output Capacitance, Cob –pF
Collector-to-Base Voltage, VCB -- V
Collector Current, IC–mA
Collector-to-Emitter
Saturation Voltage, VCE(sat) –V
Collector Current, IC–mA
Base-to-Emitter
Saturation Voltage, VBE(sat) –V
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2004. Specifications and information herein are subject to
change without notice.
2SB1405
PS No.3236–3/3
ITR09670 ITR09671
0 20 40 60 80 100 120 140 160
0
0.2
0.4
0.6
0.8
1.0
1.2
PC -- Ta
--
1.0 23 2357 57 57
--
10
--
1.0
3
2
--
0.1
--
0.01
5
3
2
5
3
2
A S O
10ms
100ms
1ms
ICP=–2A
IC=–0.7A
DC operation
Ta=25°C
Single pulse
Collector-to-Emitter Voltage, VCE –V
Collector Current, IC–A
Collector Dissipation, PC–W
Ambient Temperature, Ta –˚C