GHz TECHNOLOGY INC. RE SERV E S THE RIGHT TO MAKE CHANGES WI THOUT FURTHER NOTICE. GHz RECOM M E NDS THAT BEFORE
THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE
PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oak mead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
1214-30
30 Watts, 28 Volts, Pulsed
Radar 1200 - 1400 MHz
GENERAL DESCRIPTION CASE OUTLINE
The 1214-30 is an internally matc hed, CO M M O N BASE transisto r capab le of
providing 30 Watts of pulsed RF output power at two milliseconds pulse
widt h, twe nty per cent duty fa cto r acros s the band 1200 to 1400 MHz. This
hermetically solder-sealed transistor is specifically designed for long pulse
radar applications. It util izes gold metalization and diffused emitter ballasting
to provide high reliability and supreme ruggedness.
55AW, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maxi mum Power Dissip a tion @ 25 C 88 Watts
o
Maximum Voltage and Current
BVces Collector to Emitter Vol tag e 50 Vol ts
BVebo Emitter to Base Voltage 3.5 Volts
I c Collector Current 4.0 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200 C
o
Operating Juncti o n Temperature + 200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL CHARACTERISTICS TEST MIN TYP MAX UNITS
CONDITIONS
Pout
Pin Pow er In put Vcc = 28 Volts 6.0 W at ts
Pg
ηc
VSWR
Po wer Out F = 1200-1400 M Hz 30 Watts
Power Gain Pulse Width = 2 ms 7.0 dB
Collector Ef ficiency Duty = 20% 48 %
Load Mismatch Tolerance Rated Cond itio n s 3:1
BVces
BVebo Emitter to Base Breakdown Ie = 5 mA 3.5 Volts
Hfe
Cob
θjc
Collector to Emitter Breakdown Ic = 50 mA 50 Volts
DC Current Gain Vce =5 V, Ic =500mA 20
Output Capacitance* F =1 M Hz, Vc b=28V pF
Thermal Resistance Rated Pulse Condition 2.0 C/W
o
* Not measureable due to internal prematch network
I ssueA July 1997
1214-30
Typical Impedances
August 1996
