MITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE FS2AS-14A OUTLINE DRAWING Dimensions in mm 0.5204 i J: GATE 2 DRAIN 2 SOURCE @ DRAIN @VDSS vere c crete etre eee e eter ener nee etter ee es 7O0V erps (ON) (MAX) cocctec tres tener errs tise ees seen: 9.752 WD cece creer teeter eter rate ene enn an erenrecrcrr ren ess 2A MP-3 APPLICATION SMPS, DC-DC Converter, battery charger, power supply of printer, copier, HDD, FDD, TV, VCR, per- sonal computer eic. MAXIMUM RATINGS (Te = 25C) Parameter Conditions Voss Drain-source Vass Gate-source +30 Ip Drain current 2 lpm Drain current 6 Po Maximum 55 Toh Channel ~55 ~ +150 T 55 ~ +150 0.26 2 - 378 ate, MiTsuBSH ELECTRICELECTRICAL CHARACTERISTICS (Teh = 25C) MITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE Symbol Parameter Test conditions - timits Unit Min. Typ. Max V (BR) OSS | Drain-source breakdown voltage | ID = 1mA, VGS = OV 700 _ _ Vv V (BR) GSS | Gate-source breakdown voltage | IGS = +100A, Vos = 0V +30 _ _ Vv lass Gate leakage current Vas = +25V, VDS = OV _ _ +10 hA IDss Drain current Vos = 700V, Vas = 0V _ _ 1 mA VGS (th) Gate-source threshokd voltage ID = 1mA, VOS = 10V 2 3 4 Vv TDS (ON) Drain-source on-state resistance | ID = 1A, Vas = 10V _ TAZ 9.75 Q Vbs (ON) | Drain-source on-state voltage | ID = 1A, Vas = 10V TAT 9.75 Vv | yts | Forward transfer admittance | ID = 1A; VDS = 10V 0.72 1.2 _ S$ Ciss Input capacitance _ 270 _ pF Coss Output capacitance Vos = 25V, Vas = OV, f= 1MHz _ 30 ~ pF Crss Reverse transfer capacitance _ 5 = pF td (on) Turn-on delay time _ 10 ns tr Rise time Vop = 200V, ip = 1A, Vas = 10V, 12 _ ns td (otf) Turn-off delay time AGEN = Ras = 500 _ 33 ns tf Fall time 21 _ ns Vsp Source-drain voltage ig = 1A, VGsS = OV _ 1.0 1.5 Vv Rit ich-c) | Thermal resistance Channel to case _ 2.27 CAN PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE MAXIMUM SAFE OPERATING AREA 100 1 o _ 5 tw= 10us = = 3 a 80 ft 2 & = a 1004s Zz 190 3 60 5 7 & i 5 tims ii a fd 3 a 40 3 2 10ms a z 10-1 x = 7 100ms Ww ie 5 = 20 qo 3 3 a 2 0 10-2 - 0 50 100 450 200 10 23 57101 23 57102 23 57108 CASE TEMPERATURE Tc (C) DRAIN-SOURCE VOLTAGE Vos (V} OUTPUT CHARACTERISTICS OUTPUT CHARACTERISTICS (TYPICAL) (TYPICAL) To = 26C 2.0 Te = 25C Vas = 20V 10V Pulse Test Pulse Test => az 1. = Vas = 20V < 16 2 a x 40V 5 5 412 ww i ec cc x c 3 Bo 08 Zz 5V z < - < xc hm cc a Po = 55 o 04 4Vv 4V 0 0 0 10 20 30 50 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE Vos (V) DRAIN-SQURCE VOLTAGE Vos (V) MITSUBISHI 2 - 379 ELECTRICMITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE ON-STATE VOLTAGE VS. ON-STATE RESISTANCE VS. GATE-SOURCE VOLTAGE DRAIN CURRENT (TYPICAL) (TYPICAL) Te = 25C 20 Te = 26C Pulse Test Pulse Test rE Ke 16 <> <t % S & Zz VGS = 10V zo zs , Ow Of 12 20v i ne o> Ow Sw 9 og og 8 OF D te Za 23 zo < O oc oe 4 oO Q 0 ie) 4 8 12 16 20 107 23 57100 23 57101 23 57102 GATE-SOURCE VOLTAGE Vas (V) DRAIN CURRENT {p (A) FORWARD TRANSFER ADMITTANCE TRANSFER CHARACTERISTICS VS.DRAIN CURRENT (TYPICAL) (TYPICAL) 10! To = 25C 7 Vbs = 10V Vos = 50V Pulse Test = Pulse Test 5 <= TH 2 LS 3 5 ~2 2 = 25C i Cw fd ag 10 5 c< 7 125C 2 a <P 75C Z 25 t SG 3 a i < 2 0 10") = 0 4 8 12 16 20 10-7 2 3 57100 23 #5 7101 GATE-SOURCE VOLTAGE Vas (V} DRAIN CURRENT Ip (A) CAPACITANCE VS. DRAIN-SOURCE VOLTAGE SWITCHING CHARACTERISTICS (TYPICAL) (TYPICAL) 3 10 10 Toh = 25C 5 Vop = 200V 3 3 Vas = t0V c 9 2 2 RGEN = Aas = 502 BS 102 w 102 ze 7 2 6 & o 5 3 idtoft) og 3 2 > a 8 2 z tf - t Og 10" & 1) idion) oO 65 an) 3} Tech = 25C 3 2h f= MHz 2 400 VGS = 400 23 57100 23 5710! 23 57102 2 107 2 345 710 2 345 710 DRAIN-SOURCE VOLTAGE Vps (V)} DRAIN CURRENT Ip (A) _ MITSUBISHI 2 ~ 380 ae ELECTRICDRAIN-SOURCE ON-STATE RESISTANCE rps (on) (C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (eR) oss (tC) GATE-SOURCE VOLTAGE Vas (V) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25C) 20 16 12 Ny oO ON 190 Ny oO aN 10-1 0.4 GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) Teh = 25C ID = 2A Vos = 250V 4 8 12 16 20 GATE CHARGE Qg (nC) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) VGs = 10V lo = V/2i0 Pulse Test -50 0 50 100 150 CHANNEL TEMPERATURE Tch (C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) Vas = 0V Ip = 1mA -50 0 50 100 150 CHANNEL TEMPERATURE Teh (C) TRANSIENT THERMAL IMPEDANCE 2th (ch-c) (C/W) SOURCE CURRENT Is (A) GATE-SOURCE THRESHOLD VOLTAGE V6GS (th) (V) _ 2 ~ Ro anZ Nw AN 10) 7 5 3 2 2 MITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) 10 Vas = 0V Pulse Test 8 6 4 Te = 125C TSC 25C 2 0 0 0.8 1.6 24 3.2 4.0 SOURCE-DRAIN VOLTAGE Vsp (V) THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) 5.0 Vos = 10V lo = 1mA 4.0 3.0 2.0 1.0 ~50 9 50 160 150 CHANNEL TEMPERATURE Tech (C) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS p.0e 0.01 o- 1023 5710-523 5710723 571023 5710923 5710123 57102 PULSE WIDTH tw (s) MITSUBISHI 2 ~ 381 ELECTRIC