DYO) TD AMOS [5 ET IRF512,513 FIELD EFFECT POWER TRANSISTOR ie Wovorts RDS(ON) = 9.8 0 The IRF512, 513 Series is an N-Channel Enhancement-mode Power MOSFET utilizing GEs advanced Power DMOS tech- nology to achieve low on-resistance with excellent device ruggedness and reliability. The IRF512, 513 design has been optimized to give superior Ss performance in most switching applications including: N-CHANNEL CASE STYLE TO-220AB switching power supplies, inverters, converters and sole- DIMENSIONS ARE IN INCHES AND (MILLIMETERS) noid/relay drivers. Also, the extended safe operating area with soatio28) 1878) 1901.90) asst 30 good linear transfer characteristics makes it well suited for prsenieee) of T7014. 32) of Te Saat many linear applications such as audio amplifiers and servo pos 265073! A motors. TF aawe22!| case TEMPERATURE : + REF FERENCE Features sasiase) ue ae? DIA. -325(8, Polysilicon gate Improved stability and reliability ee i 4, 4 ' . a be :908(0.1 No secondary breakdown Excellent ruggedness A i a Dore Ultra-fast switching Independent of temperature teens en ee Voltage controlled High transconductance TEAMS ~~" oer . Low input capacitance Reduced drive requirement 788 a SRS e Excellent thermal stability Ease of paralleling a Fags ge UNIT TYPE [TERM.1/TERM.2] TERM.3 TAB POWER MOS FET|TO-220-AB] GATE |ORAIN| SOURCE; DRAIN maximum ratings (Tc = 25C) (untess otherwise specified) RATING SYMBOL IRF512 IRF513 UNITS Drain-Source Voltage Voss 100 60 Volts Drain-Gate Voltage, Res = 1M VpGR 100 60 Volts Continuous Drain Current t= = 25C Ip 3.5 3.5 A = 100C 2.0 2.0 A Pulsed Drain Current") lom 14 14 A Gate-Source Voltage Vas +20 +20 Volts Total Power Dissipation @ Tc = 25C Po 20 20 Watts Derate Above 25C 0.16 0.16 wc Operating and Storage Junction Temperature Range Ty, Tsta -55 to 150 ~55 to 150 C thermal characteristics Thermal Resistance, Junction to Case Rgjc 6.4 6.4 C/W Thermal Resistance, Junction to Ambient Rasa 80 80 C/W Maximum Lead Temperature for Soldering Purposes: % from Case for 5 Seconds Th 260 260 C (1) Repetitive Rating: Pulse width limited by max. junction temperature. 175electrical characteristics (Tc = 25C) (unless otherwise specified) | CHARACTERISTIC | SYMBOL| MIN | TYP | MAX | UNIT off characteristics Drain-Source Breakdown Voltage IRF512 BVpss 100 _ _ Voits (Veg = OV, Ip = 250 WA) IRF513 60 _ _ Zero Gate Voltage Drain Current Ipss (Vps = Max Rating, Veg = OV, Tc = 25C) _ 250 HA (Vps = Max Rating, 0.8, Vgg = OV, Tc = 125C) _ 1000 Gate-Source Leakage Current (Vas = 20V) lass _ _ +500 nA on characteristics Gate Threshold Voltage To = 25C | VascTH) 2.0 _ 4.0 Volts (Vps = Vas; |p = 250 mA) On-State Drain Current , (Vas = 10V, Vps = 10V) Vps(on) | 3.5 A Static Drain-Source On-State Resistance (Vas = 10V, Ip = 2A) Rps(ON) _ 0.6 0.8 Ohms Forward Transconductance (Ip = 1.5A) Sts 8 11 _ mhos dynamic characteristics input Capacitance Vas = OV Ciss _ 145 200 pF Output Capacitance Vps = 25V Coss _ 65 100 pF Reverse Transfer Capacitance f= 1 MHz Crss _ 20 25 pF switching characteristics Turn-on Delay Time Vos = 30V ta(on) 15 _ ns Rise Time Ip = 2A, Vag = 15V tr _ 15 _ ns Turn-off Delay Time RoGeEn = 500, Regs = 12.50, ta(off) _ 30 _ ns Fall Time (Res (EQuiv.) = 100) tt _ 10 _ ns source-drain diode ratings and characteristics Continuous Source Current Is _ _ 3.5 A Pulsed Source Current ism _ _ 14 A Diode Forward Voltage _ 1 (To = 25C, Vag = OV, Is = 3.5A) Vsp 4 2.0 Volts Reverse Recovery Time ter 100 _ ns (Ig = 4A, dig/dt = 100A/us, Vps = 40V max., To = 125C) QrrR _ 3 _ pC *Pulse Test: Pulse width < 300 us, duty cycle <= 2% 100 80 60 40 20 b OKO \AFS12 Ip. ORAIN CURRENT (AMPERES) 1.0 08 (RFS13 0.6 4 OPERATION IN THIS AREA 10ms 100ms MAY BE LIMITED BY Rogiony 0.2 SINGLE PULSE pc Tp= 25C 4 2 4 6 810 20 40 60 80100 Vps, DRAINSOURCE VOLTAGE (VOLTS) MAXIMUM SAFE OPERATING AREA 200 400 600 1000 176 2.4 2.2 CONDITIONS: Rosion) CONDITIONS: Ip= 2.0A, Vgg=10V Vesiry) CONDITIONS: In=1MA, Vog* Veg 2.0 1.8 16 Rosion) 14 1.2 lo 08 0.6 Rogion) AND Veer) NORMALIZED 0.4 0.2 0 40 O 40 80 Ty, SUNCTION TEMPERATURE (C) 120 160