TZX-Series
Document Number 85614
Rev. 2.0, 24-Feb-06
Vishay Semiconductors
www.vishay.com
1
94 9367
Small Signal Zener Diodes
Features
• Very sharp reverse characteristic
• Low reverse current level
• Very high stability
•Low noise
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Voltage stabilization
Mechanical Data
Case: DO-35 Glass case
Weight: approx. 125 mg
Packaging codes/options:
TAP/10 k per Ammopack (52 mm tape), 30 k/box
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Power dissipation l = 4 mm, TL = 25 °C Ptot 500 mW
Z-current IZPtot/VZmA
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 175 °C
Parameter Test condition Symbol Value Unit
Junction ambient l = 4 mm, TL = constant RthJA 300 K/W
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage IF = 200 mA VF1.5 V
e2
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Document Number 85614
Rev. 2.0, 24-Feb-06
TZX-Series
Vishay Semiconductors
Electrical Characteristics
Partnumber
group
Partnumber Zener Voltage Dynamic
Resistance
Test
Current
Reverse Leakage Current
VZ at IZrZ at IZIZIRat VRIR1) at VR1)
V V ΩmA µA VµA V
min max max max max
TZX2V4 TZX2V4A 2.3 2.5 100 5 5 0.5 50 1
TZX2V4B 2.4 2.6 100 5 5 0.5 50 1
TZX2V7 TZX2V7A 2.5 2.7 100 5 5 0.5 10 1
TZX2V7B 2.6 2.8 100 5 5 0.5 10 1
TZX2V7C 2.7 2.9 100 5 5 0.5 10 1
TZX3V0 TZX3V0A 2.8 3 100 5 5 0.5 6 1
TZX3V0B 2.9 3.1 100 5 5 0.5 6 1
TZX3V0C 3 3.2 100 5 5 0.5 6 1
TZX3V3 TZX3V3A 3.1 3.3 100 5 5 1 2 1
TZX3V3B 3.2 3.4 100 5 5 1 2 1
TZX3V3C 3.3 3.5 100 5 5 1 2 1
TZX3V6 TZX3V6A 3.4 3.6 100 5 5 1 2 1
TZX3V6B 3.5 3.7 100 5 5 1 2 1
TZX3V6C 3.6 3.8 100 5 5 1 2 1
TZX3V9 TZX3V9A 3.7 3.9 100 5 5 1 2 1
TZX3V9B3.8410055121
TZX3V9C 3.9 4.1 100 5 5 1 2 1
TZX4V3 TZX4V3A 4 4.2 100 5 5 1.5 1 1
TZX4V3B 4.1 4.3 100 5 5 1.5 1 1
TZX4V3C 4.2 4.4 100 5 5 1.5 1 1
TZX4V3D 4.3 4.5 100 5 5 1.5 1 1
TZX4V7 TZX4V7A 4.4 4.6 100 5 5 2 6 2
TZX4V7B 4.5 4.7 100 5 5 2 5 2
TZX4V7C 4.6 4.8 100 5 5 2 4 2
TZX4V7D 4.7 4.9 100 5 5 2 3 2
TZX5V1 TZX5V1A 4.8 5 100 5 5 2 2 2
TZX5V1B 4.9 5.1 100 5 5 2 2 2
TZX5V1C 5 5.2 100 5 5 2 2 2
TZX5V1D 5.1 5.3 100 5 5 2 2 2
TZX5V6 TZX5V6A 5.2 5.5 40 5 5 2 1 2
TZX5V6B 5.3 5.6 40 5 5 2 1 2
TZX5V6C 5.4 5.7 40 5 5 2 1 2
TZX5V6D 5.5 5.8 40 5 5 2 1 2
TZX5V6E 5.6 5.9 40 5 5 2 1 2
TZX6V2 TZX6V2A 5.7 6 15 5 1 3 3 4
TZX6V2B 5.8 6.1 15 5 1 3 3 4
TZX6V2C 6 6.3 15 5 1 3 3 4
TZX6V2D 6.1 6.4 15 5 1 3 3 4
TZX6V2E 6.3 6.6 15 5 1 3 3 4
TZX6V8 TZX6V8A 6.4 6.7 15 5 1 3.5 2 4
TZX6V8B 6.6 6.9 15 5 1 3.5 2 4
TZX6V8C 6.7 7 15 5 1 3.5 2 4
TZX6V8D 6.9 7.2 15 5 1 3.5 2 4
TZX-Series
Document Number 85614
Rev. 2.0, 24-Feb-06
Vishay Semiconductors
www.vishay.com
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TZX7V5 TZX7V5A 7 7.3 15 5 1 5 30 6.65
TZX7V5B 7.2 7.6 15 5 1 5 30 6.84
TZX7V5C 7.3 7.7 15 5 1 5 30 6.94
TZX7V5D 7.5 7.9 15 5 1 5 30 7.13
TZX7V5X 7.07 7.45 15 5 1 5 30 6.72
TZX8V2 TZX8V2A 7.7 8.1 20 5 1 6.2 0.1 7.32
TZX8V2B 7.9 8.3 20 5 1 6.2 0.1 7.5
TZX8V2C 8.1 8.5 20 5 1 6.2 0.1 7.7
TZX8V2D 8.3 8.7 20 5 1 6.2 0.1 7.98
TZX9V1 TZX9V1A 8.5 8.9 20 5 1 6.8 0.04 8.08
TZX9V1B 8.7 9.1 20 5 1 6.8 0.04 8.27
TZX9V1C 8.9 9.3 20 5 1 6.8 0.04 8.46
TZX9V1D 9.1 9.5 20 5 1 6.8 0.04 8.65
TZX9V1E 9.3 9.7 20 5 1 6.8 0.04 8.84
TZX10 TZX10A 9.5 9.9 25 5 1 7.5 0.04 9.03
TZX10B 9.7 10.1 25 5 1 7.5 0.04 9.22
TZX10C 9.9 10.3 25 5 1 7.5 0.04 9.41
TZX10D 10.2 10.6 25 5 1 7.5 0.04 9.69
TZX11 TZX11A 10.4 10.8 25 5 1 8.2 0.04 9.88
TZX11B 10.7 11.1 25 5 1 8.2 0.04 10.2
TZX11C 10.9 11.3 25 5 1 8.2 0.04 10.4
TZX11D 11.1 11.6 25 5 1 8.2 0.04 10.5
TZX12 TZX12A 11.4 11.9 35 5 1 9.5 0.04 10.8
TZX12B 11.6 12.1 35 5 1 9.5 0.04 11
TZX12C 11.9 12.4 35 5 1 9.5 0.04 11.3
TZX12D 12.2 12.7 35 5 1 9.5 0.04 11.6
TZX12X 11.44 12.03 35 5 1 9.5 0.04 10.9
TZX13 TZX13A 12.4 12.9 35 5 1 10 0.04 11.8
TZX13B 12.6 13.1 35 5 1 10 0.04 12
TZX13C 12.9 13.4 35 5 1 10 0.04 12.3
TZX14 TZX14A 13.2 13.7 35 5 1 11 0.04 12.5
TZX14B 13.5 14 35 5 1 11 0.04 12.8
TZX14C 13.8 14.3 35 5 1 11 0.04 13.1
TZX15 TZX15A 14.1 14.7 40 5 1 11.5 0.04 13.4
TZX15B 14.5 15.1 40 5 1 11.5 0.04 13.8
TZX15C 14.9 15.5 40 5 1 11.5 0.04 14.2
TZX15X 14.35 15.09 40 5 1 11.5 0.04 13.6
TZX16 TZX16A 15.3 15.9 45 5 1 12 0.04 14.5
TZX16B 15.7 16.5 45 5 1 12 0.04 14.9
TZX16C 16.3 17.1 45 5 1 12 0.04 15.5
TZX18A TZX18A 16.9 17.7 55 5 1 13 0.04 16.1
TZX18B 17.5 18.3 55 5 1 13 0.04 16.6
TZX18C 18.1 19 55 5 1 13 0.04 17.2
TZX20A TZX20A 18.8 19.7 60 2 1 15 0.04 17.9
TZX20B 19.5 20.4 60 2 1 15 0.04 18.5
TZX20C 20.2 21.2 60 2 1 15 0.04 19.2
Partnumber
group
Partnumber Zener Voltage Dynamic
Resistance
Te s t
Current
Reverse Leakage Current
VZ at IZrZ at IZIZIRat VRIR1) at VR1)
V V ΩmA µA VµA V
min max max max max
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Document Number 85614
Rev. 2.0, 24-Feb-06
TZX-Series
Vishay Semiconductors
1) Additional measurement
NOTE: Additional measurement of voltage group TZM9V1 to TZX36, IR at 95 % VZmin ≤ 40 nA at Tj = 25 °C
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
TZX22 TZX22A 20.9 21.9 65 2 1 17 0.04 19.9
TZX22B 21.6 22.6 65 2 1 17 0.04 20.5
TZX22C 22.3 23.3 65 2 1 17 0.04 21.2
TZX24 TZX24A 22.9 24 70 2 1 19 0.04 21.8
TZX24B 23.6 24.7 70 2 1 19 0.04 22.4
TZX24C 24.3 25.5 70 2 1 19 0.04 23.1
TZX24X 22.61 23.77 70 2 1 19 0.04 21.5
TZX27 TZX27A 25.2 26.6 80 2 1 21 0.04 23.9
TZX27B 26.2 27.6 80 2 1 21 0.04 24.9
TZX27C 27.2 28.6 80 2 1 21 0.04 25.8
TZX27X 26.99 28.39 80 2 1 21 0.04 25.6
TZX30 TZX30A 28.2 29.6 100 2 1 23 0.04 26.8
TZX30B 29.2 30.6 100 2 1 23 0.04 27.7
TZX30C 30.2 31.6 100 2 1 23 0.04 28.7
TZX30X 29.02 30.51 100 2 1 23 0.04 27.6
TZX33 TZX33A 31.2 32.6 120 2 1 25 0.04 29.6
TZX33B 32.2 33.6 120 2 1 25 0.04 30.6
TZX33C 33.2 34.5 120 2 1 25 0.04 31.5
TZX36 TZX36A 34.2 35.7 140 2 1 27 0.04 32.5
TZX36B 35.3 36.8 140 2 1 27 0.04 33.5
TZX36C 36.4 38 140 2 1 27 0.04 34.6
TZX36X 35.36 37.19 140 2 1 27 0.04 33.6
Partnumber
group
Partnumber Zener Voltage Dynamic
Resistance
Test
Current
Reverse Leakage Current
VZ at IZrZ at IZIZIRat VRIR1) at VR1)
V V ΩmA µA VµA V
min max max max max
Figure 1. Thermal Resistance vs. Lead Length
95 9611
0 5 10 15
0
100
200
300
400
500
20
ll
RthJA - Therm. Resist. Junction Ambient (K/W)
I - Lead Length (mm)
TL = constant
Figure 2. Total Power Dissipation vs. Ambient Temperature
0 120 160
0
100
300
400
500
600
P
tot
- Total Power Dissipation (mW)
T
amb
- Ambient Temperature (°C)
200
95 9602
200
80
40
TZX-Series
Document Number 85614
Rev. 2.0, 24-Feb-06
Vishay Semiconductors
www.vishay.com
5
Figure 3. Typical Change of Working Voltage under Operating
Conditions at Tamb = 25 °C
Figure 4. Typical Change of Working Voltage vs. Junction
Temperature
Figure 5. Temperature Coefficient of Vz vs. Z-Voltage
10 15 20
1
10
100
1000
VZ - Voltage Change (mV)
VZ - Z-Voltage (V)
25
95 9598
Tj = 25 °C
IZ = 5 mA
05
- 60 60 120 180
0.8
0.9
1.0
1.1
1.2
1.3
V
Ztn
- Relative Voltage Change
T
j
- Junction Temperature (°C)
240
95 9599
0
V
Ztn
= V
Zt
/V
Z
(25 °C)
0
TKVZ = 10 x 10-4/K
8 x 10-4/K
2 x 10-4/K
6 x 10-4/K
4 x 10-4/K
- 4 x 10-4/K
- 2 x 10-4/K
30
- 5
0
5
10
15
V
Z
- Z-Voltage (V)
50
95 9600
40
I
Z
= 5 mA
10 20
0
TK
VZ
- Temperature Coefficient of V
Z
(10
-4
/K)
Figure 6. Diode Capacitance vs. Z-Voltage
Figure 7. Forward Current vs. Forward Voltage
Figure 8. Z-Current vs. Z-Voltage
10 15
0
50
100
150
200
C
D
- Diode Capacitance (pF)
V
Z
- Z-Voltage (V)
25
95 9601
20
T
j
= 25 °C
V
R
= 2 V
05
0 0.2 0.4 0.6 0.8
0.001
0.01
0.1
1
10
100
1.0
95 9605
I
F
- Forward Current (mA)
V
F
- Forward Voltage (V)
T
j
= 25 °C
820
95 9604
0
20
40
60
80
100
IZ - Z-Current (mA)
P
tot
= 500 mW
T
amb
= 25 °C
046 12
VZ - Z-Voltage (V)
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Document Number 85614
Rev. 2.0, 24-Feb-06
TZX-Series
Vishay Semiconductors
Package Dimensions in mm (Inches)
Figure 9. Z-Current vs. Z-Voltage
15 20 25 30
0
10
20
30
40
50
I
Z
- Z-Current (mA)
V
Z
- Z-Voltage (V)
35
95 9607
P
tot
= 500 mW
T
amb
= 25 °C
Figure 10. Differential Z-Resistance vs. Z-Voltage
0 5 10 15 20
1
10
100
1000
(Ω)
25
95 9606
Tj = 25 °C
IZ = 1 mA
5 mA
10 mA
V
Z
- Z-Voltage (V)
r
Z
- Differential Z-Resistance
Figure 11. Thermal Response
1
10
100
1000
Z
thp
- Thermal Resistance for Pulse Cond. (KW)
t
P
- Pulse Length (ms)
95 9603
10
-1
10
0
10
1
10
2
t
P
/T = 0.5
t
P
/T = 0.2
t
P
/T = 0.1
t
P
/T = 0.05
t
P
/T = 0.02
t
P
/T = 0.01
Single Pulse R
thJA
= 300 K/W
T = T
jmax
- T
amb
i
ZM
= (- V
Z
+ (V
Z
2
+ 4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
Cathode Identification
∅2.0 (0.08) max.
∅0.55 (0.02) max.
3.9 (0.15) max.26 (1.02) min.
94 9366
Standard Glass Case
54A2 DIN41880
JEDEC DO 35 26 (1.02) min.
ISO Method E
TZX-Series
Document Number 85614
Rev. 2.0, 24-Feb-06
Vishay Semiconductors
www.vishay.com
7
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known as ozone depleting substances (ODSs).
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earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
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respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
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substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
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damage, injury or death associated with such unintended or unauthorized use.
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Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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