DSA7506 Silicon PNP epitaxial planar type For low frequency amplification Unit: mm Features Low collector-emitter saturation voltage VCE(sat) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL: Level 1 compliant) Marking Symbol: 4LR Packaging DSA7506R0L Embossed type (Thermo-compression sealing): 1 000 pcs / reel (standard) Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -30 V Collector-emitter voltage (Base open) VCEO -25 V Emitter-base voltage (Collector open) VEBO -11 V Collector current IC -3 A Peak collector current *1 ICP -10 A Collector power dissipation *2 PC 1 W Junction temperature Tj 150 C Operating ambient temperature Topr -40 to +85 C Storage temperature Tstg -55 to +150 C 1: Base 2: Collector 3: Emitter Panasonic JEITA Code MiniP3-F2-B SC-62 TO-243 Note) *1: Pulse width 1ms, Single pulse *2: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness of 1.7 mm for the collector portion Electrical Characteristics Ta = 25C3C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) VCBO IC = -10 mA, IE = 0 -30 V Collector-emitter voltage (Base open) VCEO IC = -1 mA, IB = 0 -25 V Emitter-base voltage (Collector open) VEBO IE = -10 mA, IC = 0 -11 V hFE VCE = -2 V, IC = -1.4 A 130 VCE(sat) IC = -1.4 A, IB = -25 mA - 0.2 fT VCE = -6 V, IC = -50 mA 150 Forward current transfer ratio *1, 2 Collector-emitter saturation voltage *1 Transition frequency Collector output capacitance (Common base, input open circuited) Cob 450 - 0.27 V VCB = -10 V, IE = 0, f = 1 MHz MHz 85 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification: Only R rank producing. Publication date: February 2014 Ver. BED 1 DSA7506 DSA7506_PC-Ta DSA7506_IC-VCE PC Ta IC VCE 500 -4 IB = -20 mA -3 -17 mA -14 mA 40 80 120 160 -2 -5 mA -2 mA 0 0 200 Ambient temperature Ta (C) -2 -4 -8 -10 25C 300 -40C 200 100 0 -10-2 -12 Ta = 85C 25C -2.0 Cob VCB 100 25C -40C -1.0 -10 Collector current IC (A) 0 0 IE = 0 f = 1 MHz Ta = 25C 150 Ta = 85C -40C -1 -10 Collector current IC (A) 200 VCE = -2 V -3.0 -1 -10-1 DSA7506_Cob-VCB -4.0 Collector current IC (A) -1 -10-1 400 IC VBE IC / IB = 56 -10-2 -10-2 Ta = 85C DSA7506_IC-VBE VCE(sat) IC -10-1 -6 VCE = -2 V 500 Collector-emitter voltage VCE (V) DSA7506_VCEsat-IC -10 -11 mA -8 mA -1 250 0 Forward current transfer ratio hFE Ta = 25C Collector current IC (A) 750 600 Collector output capacitance (Common base, input open circuited) Cob (pF) Collector power dissipation PC (mW) Copper plate at the collector is more than 1.0 cm2 in area, 1.7 mm in thickness. 1 000 Collector-emitter saturation voltage VCE(sat) (V) hFE IC -5 1 250 0 DSA7506_hFE-IC - 0.2 - 0.4 - 0.6 - 0.8 -1.0 Base-emitter voltage VBE (V) -1.2 50 0 -1 -10 -102 Collector-base voltage VCB (V) DSA7506_fT-IC fT IC Transition frequency fT (MHz) 400 VCE = -6 V Ta = 25C 300 200 100 0 -1 -10 -102 -103 Collector current IC (mA) Ver. BED 2 DSA7506 MiniP3-F2-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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