Ver. BEDPublication date: February 2014 1
DSA7506
Silicon PNP epitaxial planar type
For low frequency amplification
Features
Low collector-emitter saturation voltage VCE(sat)
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Marking Symbol: 4LR
Packaging
DSA7506R0L
Embossed type (Thermo-compression sealing): 1
000 pcs / reel (standard)
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO –30 V
Collector-emitter voltage (Base open) VCEO –25 V
Emitter-base voltage (Collector open) VEBO –11 V
Collector current IC–3 A
Peak collector current *1ICP –10 A
Collector power dissipation *2PC1 W
Junction temperature Tj150 °C
Operating ambient temperature Topr –40 to +85 °C
Storage temperature Tstg –55 to +150 °C
Note) *1: Pulse width ≤ 1ms, Single pulse
*2: Printed circuit board: Copper foil area of 1 cm2 or more, and the board thickness
of 1.7 mm for the collector portion
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC = –10 mA, IE = 0 –30 V
Collector-emitter voltage (Base open) VCEO IC = –1 mA, IB = 0 –25 V
Emitter-base voltage (Collector open) VEBO IE = –10 mA, IC = 0 –11 V
Forward current transfer ratio *1, 2 hFE VCE = –2 V, IC = –1.4 A 130 450
Collector-emitter saturation voltage *1VCE(sat) IC = –1.4 A, IB = –25 mA – 0.2 – 0.27 V
Transition frequency fTVCE = –6 V, IC = –50 mA 150 MHz
Collector output capacitance
(Common base, input open circuited)
Cob VCB = –10 V, IE = 0, f = 1 MHz 85 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification: Only R rank producing.
Unit: mm
1: Base
2: Collector
3: Emitter
Panasonic MiniP3-F2-B
JEITA SC-62
Code TO-243
Ver. BED
DSA7506
2
PC Ta IC VCE hFE IC
VCE(sat) IC IC VBE Cob VCB
0
0 200 160 40 120 80
Ambient temperature Ta (°C)
Collector power dissipation PC (mW)
DSA7506_PC-Ta
250
1
000
750
500
1
250
Copper plate at the collector is
more than 1.0 cm2 in area, 1.7 mm
in thickness.
0
0 −12 −2 −10 −4 −8 −6
−5
−4
−3
−2
−1
Collector current IC (A)
Collector-emitter voltage VCE (V)
DSA7506_IC-VCE
Ta = 25°C
IB = −20 mA
−2 mA
−5 mA
−8 mA
−11 mA
−14 mA
−17 mA
0
−10−2 −10−1
600
400
500
300
200
100
−1 −10
Forward current transfer ratio hFE
Collector current IC (A)
DSA7506_hFE-IC
25°C
−40°C
Ta = 85°C
VCE = −2 V
−10−2
−10−2
−10−1
−1
−10
−10−1 −1 −10
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC (A)
DSA7506_VCEsat-IC
25°C
−40°C
Ta = 85°C
IC / IB = 56
0
0 −1.2− 0.2 −1.0 − 0.4 − 0.8 − 0.6
−4.0
−3.0
−2.0
−1.0
Collector current IC (A)
Base-emitter voltage VBE (V)
DSA7506_IC-VBE
−40°C
25°C
Ta = 85°C
VCE = −2 V
0
−1
200
150
100
50
−10 −102
Collector-base voltage VCB (V)
DSA7506_Cob-VCB
Collector output capacitance
(Common base, input open circuited) Cob (pF)
IE = 0
f = 1 MHz
Ta = 25°C
fT IC
0
−1
400
300
200
100
−10 −102 −103
Transition frequency fT (MHz)
Collector current IC (mA)
DSA7506_fT-IC
VCE = −6 V
Ta = 25°C
Ver. BED
DSA7506
3
MiniP3-F2-B Unit: mm
Land Pattern (Reference) (Unit: mm)
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semiconductors described in this book
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
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