LESHAN RADIO COMPANY, LTD. Preliminary Information General Purpose Transistor PNP Silicon MMBT2907AWT1 These transistors are designed for general purpose mplifier applications. They are housed in the SOT-323/ SC-70 package which is designed for low power surface 3 mount applications. 3 COLLECTOR 1 2 1 BASE CASE 419-02 , STYLE 3 SOT-323 / SC - 70 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO - 60 Vdc Collector-Base Voltage V CBO - 60 Vdc Emitter-Base Voltage V EBO - 5.0 Vdc IC - 600 mAdc Collector Current -- Continuous THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 150 mW RJA 833 C/W TJ , Tstg -55 to +150 C Total Device Dissipation FR- 5 Board, (1) TA = 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature DEVICE MARKING MMBT2907AWT1 = 2F ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit V (BR)CEO -60 -- Vdc V (BR)CBO -60 -- Vdc V (BR)EBO -5.0 -- Vdc I BL -- - 50 nAdc I CEX -- - 50 nAdc OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (I C = - 10 mAdc, I B = 0) Collector-Emitter Breakdown Voltage (I C = - 10 mAdc, I E = 0) Emitter-Base Breakdown Voltage (I E = -10Adc, I C = 0) Base Cutoff Current ( V CE = -30Vdc, V EB(OFF) = -0.5Vdc ) Collector Cutoff Current ( V CE = -30Vdc, V EB(OFF) = -0.5Vdc ) 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. K2-1/2 LESHAN RADIO COMPANY, LTD. MMBT2907AWT1 ELECTRICAL CHARACTERISTICS (T A = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 75 100 100 100 50 -- -- -- -- -- -- -- -0.4 -1.6 -- -- -1.3 -2.6 200 -- MHz -- 8.0 pF -- 30 pF -- -- -- -- -- -- 45 10 40 80 30 100 ON CHARACTERISTICS DC Current Gain(1) (I C =-0.1 mAdc, V CE =-10 Vdc) (I C = -1.0 mAdc, V CE = -10 Vdc) (I C = -10 mAdc, V CE = -10 Vdc) (I C = -150mAdc, V CE = -10Vdc) (I C = -500mAdc, V CE =-10 Vdc) Collector-Emitter Saturation Voltage(1) (I C = -150 mAdc, I B = -15 mAdc) (I C = -500 mAdc, I B = -50 mAdc) Base-Emitter Saturation Voltage(1) (I C = -150 mAdc, I B = -15mAdc) (I C = -500mAdc, I B = -50mAdc ) hFE -- VCE(sat) V Vdc Vdc BE(sat) SMALL-SIGNAL CHARACTERISTICS Current-Gain -- Bandwidth Product(4) (I C = -50mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance (V CB = -10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = -2.0Vdc, I C = 0, f = 1.0 MHz) f T C obo C ibo SWITCHING CHARACTERISTICS Turn-On Time (V CC = -30 Vdc, Delay Time I C = -150 mAdc, I B1 = -15 mAdc) Rise Time Storage Time (V CC = -6.0 Vdc, Fall Time I C = -150 mAdc,I B1 = I B2 = 15 mAdc) Turn-Off Time 1. Pulse Test: Pulse Width <300 s, Duty Cycle <2.0%. t on td tr ts tf t off ns ns K2-2/2