LESHAN RADIO COMPANY, LTD.
K2–1/2
2
EMITTER
3
COLLECTOR
1
BASE
Preliminary Information
General Purpose Transistor
PNP Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter V oltage V CEO – 60 Vdc
Collector–Base V oltage V CBO – 60 Vdc
Emitter–Base V oltage V EBO – 5.0 Vdc
Collector Current — Continuous I C– 600 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD150 mW
TA = 25°C
Thermal Resistance, Junction to Ambient RθJA 833 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
DEVICE MARKING
MMBT2907AWT1 = 2F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(2) V (BR)CEO –60 — Vdc
(I C = – 10 mAdc, I B = 0)
Collector–Emitter Breakdown Voltage V (BR)CBO –60 — Vdc
(I C = – 10 mAdc, I E = 0)
Emitter–Base Breakdown Voltage V (BR)EBO –5.0 — Vdc
(I E = –10µAdc, I C = 0)
Base Cutoff Current I BL — – 50 nAdc
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
Collector Cutoff Current I CEX — – 50 nAdc
( V CE = –30Vdc, V EB(OFF) = –0.5Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
These transistors are designed for general purpose
mplifier applications. They are housed in the SOT–323/
SC–70 package which is designed for low power surface
mount applications.
1
3
2
MMBT2907AWT1
CASE 419–02 , STYLE 3
SOT–323 / SC – 70
LESHAN RADIO COMPANY, LTD.
K2–2/2
MMBT2907AWT1
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Ma x Unit
ON CHARACTERISTICS
DC Current Gain(1) hFE ––
(I C =–0.1 mAdc, V CE =–10 Vdc) 75 ––
(I C = –1.0 mAdc, V CE = –10 Vdc) 100 ––
(I C = –10 mAdc, V CE = –10 Vdc) 100 ––
(I C = –150mAdc, V CE = –10Vdc) 100 ––
(I C = –500mAdc, V CE =–10 Vdc) 50 ––
Collector–Emitter Saturation V oltage(1) VCE(sat) Vdc
(I C = –150 mAdc, I B = –15 mAdc) –– –0.4
(I C = –500 mAdc, I B = –50 mAdc) –– –1.6
Base–Emitter Saturation V oltage(1) V BE(sat) Vdc
(I C = –150 mAdc, I B = –15mAdc) –– –1.3
(I C = –500mAdc, I B = –50mAdc ) –– –2.6
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(4) f T200 –– MHz
(I C = –50mAdc, V CE= 20Vdc, f = 100MHz)
Output Capacitance
(V CB = –10 Vdc, I E = 0, f = 1.0 MHz) C obo –– 8.0 pF
Input Capacitance C ibo –– 30 pF
(V EB = –2.0Vdc, I C = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Turn–On T ime (V CC = –30 Vdc, t on —45
Delay Time I C = –150 mAdc, I B1 = –15 mAdc) t d—10ns
Rise T ime t r—40
Storage T ime (V CC = –6.0 Vdc, t s—80
Fall T ime I C = –150 mAdc,I B1 = I B2 = 15 mAdc) t f—30ns
T urn–Off Time t off — 100
1. Pulse Test: Pulse Width
<
300 µs, Duty Cycle
<
2.0%.
