Hardware
Documentation
Linear Hall-Effect Sensor Family
in SOT89B Package
HAL® 1821...HAL 1823
Edition Aug. 2, 2013
DSH000162_001EN
Data Sheet
HAL1821...HAL1823 DATA SHEET
2Aug. 2, 2013; DSH000162_001EN Micronas
Copyright, Warranty, and Limitation of Liability
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
expressly granted remain reserved by Micronas.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.
By this publication, Micronas does not assume respon-
sibility for patent infringements or other rights of third
parties which may result from its use. Commercial con-
ditions, product availability and delivery are exclusively
subject to the respective order confirmation.
Any information and data which may be provided in the
document can and do vary in different applications,
and actual performance may vary over time.
All operating parameters must be validated for each
customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this docu-
ment and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.
Do not use our products in life-supporting systems,
military, aviation, or aerospace applications! Unless
explicitly agreed to otherwise in writing between the
parties, Micronas’ products are not designed, intended
or authorized for use as components in systems
intended for surgical implants into the body, or other
applications intended to support or sustain life, or for
any other application in which the failure of the product
could create a situation where personal injury or death
could occur.
No part of this publication may be reproduced, photo-
copied, stored on a retrieval system or transmitted
without the express written consent of Micronas.
Micronas Trademarks
–HAL
Third-Party Trademarks
All other brand and product names or company names
may be trademarks of their respective companies.
Contents
Page Section Title
Micronas Aug. 2, 2013; DSH000162_001EN 3
DATA SHEET HAL1821...HAL1823
4 1. Introduction
4 1.1. Major Applications
41.2.Features
4 1.3. Family Overview
4 1.4. Marking Code
4 1.5. Operating Junction Temperature Range (TJ)
5 1.6. Hall Sensor Package Codes
5 1.7. Solderability and Welding
5 1.8. Pin Connections and Short Descriptions
6 2. Functional Description
6 2.1. General Function
7 3. Specifications
7 3.1. Outline Dimensions
8 3.2. Dimensions of Sensitive Area
8 3.3. Position of Sensitive Areas
8 3.4. Absolute Maximum Ratings
9 3.4.1. Storage and Shelf Life
9 3.5. Recommended Operating Conditions
10 3.6. Characteristics
11 3.7. Magnetic Characteristics
12 3.7.1. Definition of Sensitivity Error ES
13 4. Application Notes
13 4.1. Ambient Temperature
13 4.2. EMC and ESD
13 4.3. Application Circuit
14 5. Data Sheet History
HAL1821...HAL1823 DATA SHEET
4Aug. 2, 2013; DSH000162_001EN Micronas
Linear Hall-Effect Sensor Family in SOT89B Pack-
age
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL182x is a new family of linear Hall-effect sen-
sors. It is a universal magnetic field sensor with a ratio-
metric, linear analog output. This sensor family can be
used for magnetic field measurements, current mea-
surements and detection of mechanical movements.
Very accurate angle measurements or distance mea-
surements can also be done. The sensors are very
robust and can be used in harsh environments.
The output voltage is proportional to the magnetic flux
density through the hall plate. The choppered offset
compensation leads to stable magnetic characteristics
over supply voltage and temperature.
The different family members vary by sensitivity
(25 mV/mT, 31.25 mV/mT and 50 mV/mT). The quies-
cent output voltage (offset) is for all family members
50% of supply voltage.
The sensor is designed for industrial applications and
operates in the junction temperature range from –40 °C
up to 170 °C.
1.1. Major Applications
Due to the sensor’s robust characteristics, the
HAL182x is the optimal system solution for applica-
tions such as:
– linear position measurements,
– angle sensors,
– distance measurements,
– magnetic field and current measurement.
1.2. Features
– ratiometric linear output proportional to the mag-
netic field
– temperature and stress stable quiescent output volt-
age
– very accurate sensitivity and offset
– customized versions possible
– on-chip temperature compensation
– active offset compensation
– operates from 40 °C up to 170 °C junction temper-
ature
– operates from 4.5 V up to 5.5 V supply voltage in
specification operates with static magnetic fields
and dynamic magnetic fields up to 2.25 kHz
– overvoltage and reverse-voltage protection
at VSUP pin
– magnetic characteristics extremely robust against
mechanical stress
– short-circuit protected push-pull output
– EMC and ESD optimized design
1.3. Family Overview
1.4. Marking Code
The HAL182x has a marking on the package surface
(branded side). This marking includes the name of the
sensor and the temperature range.
1.5. Operating Junction Temperature Range (TJ)
The Hall sensors from Micronas are specified to the
chip temperature (junction temperature TJ).
A: TJ = 40 °C to +170 °C
The relationship between ambient temperature (TA)
and junction temperature is explained in Section 4.1.
on page 13.
Type Offset Sensitivity see
Page
1821 50% of VSUP 50 mV/mT 11
1822 50% of VSUP 31.25 mV/mT 11
1823 50% of VSUP 25 mV/mT 11
Type Temperature Range
A
HAL 1821 1821A
HAL 1822 1822A
HAL 1823 1823A
DATA SHEET HAL1821...HAL1823
Micronas Aug. 2, 2013; DSH000162_001EN 5
1.6. Hall Sensor Package Codes
Hall sensors are available in a wide variety of packag-
ing versions and quantities. For more detailed informa-
tion, please refer to the brochure: “Hall Sensors:
Ordering Codes, Packaging, Handling”.
1.7. Solderability and Welding
Soldering
During soldering reflow processing and manual
reworking, a component body temperature of 260 °C
should not be exceeded.
Welding
Device terminals should be compatible with laser and
resistance welding. Please note that the success of
the welding process is subject to different welding
parameters which will vary according to the welding
technique used. A very close control of the welding
parameters is absolutely necessary in order to reach
satisfying results. Micronas, therefore, does not give
any implied or express warranty as to the ability to
weld the component.
1.8. Pin Connections and Short Descriptions
Fig. 1–1: Pin configuration
HALXXXXPA-T
Temperature Range: A
Package: SF for SOT89B-1
Type: 182x
Example: HAL1821SF-A
Type: 1821
Package: SOT89B-1
Temperature Range: TJ = 40 C to +170 C
Pin No. Pin Name Short Description
1V
SUP Supply Voltage Pin
2, 4 GND Ground
3 OUT Push-Pull Output
1
2, 4
3
VDD
OUT
GND
HAL1821...HAL1823 DATA SHEET
6Aug. 2, 2013; DSH000162_001EN Micronas
2. Functional Description
2.1. General Function
The HAL182x is a monolithic integrated circuit which
provides an output voltage proportional to the mag-
netic flux through the Hall plate and proportional to the
supply voltage (ratiometric behavior).
The external magnetic field component perpendicular
to the branded side of the package generates a Hall
voltage. The Hall IC is sensitive to magnetic north and
south polarity. This voltage is amplified and stabilized
by a push-pull output transistor stage.
Internal temperature compensation circuitry and the
choppered offset compensation enables operation
over the full temperature range with minimal degrada-
tion in accuracy and offset. The circuitry also rejects
offset shifts due to mechanical stress from the pack-
age. In addition, the sensor IC is equipped with
devices for overvoltage and reverse-voltage protection
at supply pin.
Output/Magnetic Field Polarity
Applying a south-pole magnetic field perpendicular to
the branded side of the package will increase the out-
put voltage from the quiescent (offset) voltage towards
the supply voltage. A north pole magnetic field will
decrease the output voltage.
In addition HAL182x features an internal error detec-
tion. The following error modes can be detected:
– Over-/underflow in adder or multiplier
– Over-/underflow in A/D converter
– Overtemperature detection
In case of an over-underflow error the sensors output
will be forced to the lower error band. The error band is
defined by VDIAG (see Section 3.6. on page 10).
In case of overtemperature detection, the output is set
to high impedance.
Fig. 2–1: HAL182x block diagram
Internally
Temperature
Oscillator
Switched Digital D/A Analog
GND
Calibration Control
stabilized
Supply and
Protection
Devices
Dependent
Bias
Protection
Devices
Hall Plate Signal
Processing Converter Output
A/D
Converter
OUT
VSUP
50
Undervoltage
Detection
DATA SHEET HAL1821...HAL1823
Micronas Aug. 2, 2013; DSH000162_001EN 7
3. Specifications
3.1. Outline Dimensions
Fig. 3–1:
SOT89B-1: Plastic Small Outline Transistor package, 4 leads
Ordering code: SF
Weight approximately 0.034 g
HAL1821...HAL1823 DATA SHEET
8Aug. 2, 2013; DSH000162_001EN Micronas
3.2. Dimensions of Sensitive Area
0.2mm x 0.1mm
3.3. Position of Sensitive Areas
3.4. Absolute Maximum Ratings
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.
This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this circuit.
All voltages listed are referenced to ground (GND).
SOT89B-1
y 0.95 mm nominal
A4 0.4 mm nominal
D1 2.55 0.05 mm
Symbol Parameter Pin No. Min. Max. Unit Condition
VSUP Supply Voltage 1 8.5
14.4
15
8.5
14.4
16
V t < 96 h, not additive
t < 10 min.
t < 1 min.
not additive
VOUT Output Voltage 3 0.51)
0.51)
0.51)
8.5
14.4
16
Vt < 96 h
t < 10 min.
t < 1 min.
not additive
VOUTVSUP Excess of Output Voltage
over Supply Voltage
1,3 0.5 V
IOUT Continuous Output Current 3 55mA
tSh Output Short Circuit Duration 3 10 min
TJJunction Temperature under
Bias
40 190 °C 2)
VESD ESD Protection3) 1,2,3 4.0 4.0 kV
1) internal protection resistor = 50
2) for 96h - Please contact Micronas for other temperature requirements
3) 100 pF and 1.5 k
DATA SHEET HAL1821...HAL1823
Micronas Aug. 2, 2013; DSH000162_001EN 9
3.4.1. Storage and Shelf Life
The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of
30 °C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required.
Solderability is guaranteed for two years from the date code on the package.
3.5. Recommended Operating Conditions
Functional operation of the device beyond those indicated in the “Recommended Operating Conditions/Characteris-
tics” is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime.
All voltages listed are referenced to ground (GND).
Symbol Parameter Pin No. Min. Typ. Max. Unit Remarks
VSUP Supply Voltage 1 4.5 5 5.5 V
IOUT Continuous Output Current 3 1.0 1.0 mA
RLLoad Resistor 3 5.5 10 k
CLLoad Capacitance 3 0.33 10 47 nF
TJJunction Operating Tem-
perature 1) 40
40
40
125
150
170
°C
°C
°C
for 8000 hrs
for 2000 hrs
for 1000 hrs
Time values are not
additive
1) Depends on the temperature profile of the application. Please contact Micronas for life time calculations.
HAL1821...HAL1823 DATA SHEET
10 Aug. 2, 2013; DSH000162_001EN Micronas
3.6. Characteristics
at TJ = 40 °C to +170 °C (for temperature type A), VSUP = 4.5 V to 5.5 V, GND = 0 V,
at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 °C and VSUP = 5 V.
Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions
ISUP Supply Current
over Temperature Range
1710mA
Resolution 3 10 Bit
INL Non-Linearity of Output
Voltage over Temperature
31.0 0 1.0 % % of supply voltage1)
ERRatiometric Error of Output
over Temperature
(Error in VOUT / VSUP)
31.0 0 1.0 %
VOQ Output Quiescent Voltage 3 2.425 2.5 2.575 V B = 0 mT, TJ = 25 °C, IOUT = ±1
mA
VOUTH Output High Voltage 3 4.7 4.9 V V
SUP = 5 V, IOUT = ±1 mA2)
VOUTL Output Low Voltage 3 0.1 0.3 V VSUP= 5 V, IOUT = ±1 mA2)
tr(O) Response Time of Output3) 30.5 1 ms CL = 10 nF, time from 10% to
90% of final output voltage for a
step like
signal Bstep from 0 mT to Bmax
tPOD Power-Up Time (Time to
reach stabilized Output
Voltage)3)
11.5msC
L = 10 nF, 90% of VOUT
BW Small Signal Bandwidth
(3dB)
3) 3 2.25 2.5 kHz BAC < 10 mT
VOUTn Output RMS Noise4) 32.6 5 mV B = 5 to 95% of Bmax
ROUT Output Resistance over
Recommended Operating
Range4)
360 VOUTLmax VOUT VOUTHmin
VPORLH Power-On Reset Level from
VSUPLow to VSUPHigh
1 3.9 4.35 4.5 V
VPORHL Power-On Reset Level from
VSUPHigh to VSUPLow
13.84.24.4V
VPORHYS Power-On Hysteresis 1 0.1 0.175 0.3 V
VDIAG Output Voltage in case of
Error Detection
30300 mV
SOT89B Package
Rthja
Rthjc
Thermal Resistance
junction to air
junction to case
210
60
K/W
K/W
Measured with a 1s0p board
1)if more than 50% of the selected magnetic field range are used and VOUT is between 0.3 V and 4.7 V
2) Linear output range
3) Guaranteed by design
4) Not tested, characterized only
DATA SHEET HAL1821...HAL1823
Micronas Aug. 2, 2013; DSH000162_001EN 11
3.7. Magnetic Characteristics
at Recommended Operating Conditions if not otherwise specified in the column ’Test Conditions’,
TJ =40 °C to +170 °C (for temperature type A), VSUP = 4.5 V to 5.5 V.
Typical Characteristics for TA = 25 °C and VSUP = 5 V.
Symbol Parameter Pin No. Values Unit Test Conditions
Min. Typ. Max.
Sens Sensitivity 3 47.5
28.43
22.25
50.0
31.25
25.0
52.5
34.07
27.75
mV/mT HAL1821; TJ = 25°C
HAL1822; TJ = 25°C
HAL1823; TJ = 25°C
ES Sensitivity Error over
Temperature Range
360 6 %
SensLife Sensitivity Drift (beside
temperature drift)1) 2%T
J = 25°C; after tem-
perature cycling and
over life time
BOFFSET Magnetic offset 3 1.4
2.3
2.8
0
0
0
1.4
2.3
2.8
mT HAL1821
HAL1822
HAL1823
B = 0 mT, TA = 25 °C
BOFFSET Magnetic offset drift over
Temperature Range
BOFFSET(T) BOFFSET
(25 °C)
3950
950
1015
0
0
0
950
950
1015
µT HAL1821
HAL1822
HAL1823
B = 0 mT
BHysteresis Magnetic Hysteresis1) 320 0 20 µT Range = 40 mT
1) Not tested, characterized only
HAL1821...HAL1823 DATA SHEET
12 Aug. 2, 2013; DSH000162_001EN Micronas
Fig. 3–2: Definition of Sensitivity Error ES.
3.7.1. Definition of Sensitivity Error ES
ES is the maximum of the absolute value of 1 minus
the quotient of the normalized measured value1) over
the normalized ideal linear2) value:
In the example shown in Fig. 3–2 the maximum error
occurs at 10 °C:
50 75 100 125 150 175
25
0
-25
-50
0.98
0.99
1.00
1.01
1.02
1.03
-10
0.993
1.001
temperature [°C]
relative sensitivity related to 25 °C value
ideal 200 ppm/k
least-square-fit straight-line of
normalized measured data
measurement example of real
sensor, normalized to achieve a
value of 1 of its least-square-fit
straight-line at 25 °C
1) normalized to achieve a least-square-fit straight-line
that has a value of 1 at 25 °C
2) normalized to achieve a value of 1 at 25 °C
ES max abs meas
ideal
------------1–
Tmin, Tmax
=
ES 1.001
0.993
------------- 1–0.8%==
DATA SHEET HAL1821...HAL1823
Micronas Aug. 2, 2013; DSH000162_001EN 13
4. Application Notes
4.1. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
TJ = TA + T
At static conditions and continuous operation, the fol-
lowing equation applies:
T = ISUP * VSUP * RthjX
The X represents junction to air or to case.
For worst case calculation, use the max. parameters
for ISUP and RthjX, and the max. value for VSUP from
the application.
The following example shows the result for junction to
air conditions. VSUP = 5.5 V, Rthja = 250 K/W and IDD =
10 mA the temperature difference T = 13.75 K.
The junction temperature TJ is specified. The maxi-
mum ambient temperature TAmax can be calculated as:
TAmax = TJmax T
4.2. EMC and ESD
The HAL182x is designed for a stabilized 5 V supply.
Interferences and disturbances conducted along the
12 V onboard system (product standard ISO 7637 part
1) are not relevant for these applications.
For applications with disturbances by capacitive or
inductive coupling on the supply line or radiated distur-
bances, the application circuit shown in Fig. 4–1 is rec-
ommended. Applications with this arrangement should
pass the EMC tests according to the product stan-
dards ISO 7637 part 3 (Electrical transient transmis-
sion by capacitive or inductive coupling) and part 4
(Radiated disturbances).
4.3. Application Circuit
For EMC protection, it is recommended to connect one
ceramic 10 nF capacitor between ground and output
voltage pin as well as 100 nF between supply and
ground.
Fig. 4–1: Recommended application circuit
OUT
VDD
GND
100 nF HAL182x
10 nF
HAL1821...HAL1823 DATA SHEET
14 Aug. 2, 2013; DSH000162_001EN Micronas
Micronas GmbH
Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany
Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com
5. Data Sheet History
1. Data Sheet: “HAL1821...HAL1823, Linear Hall-
Effect Sensor Family”, May 6, 2011,
DSH000157_001EN.
2. Data Sheet: “HAL1821...HAL1823 Linear Hall-
Effect Sensor Family in SOT89B Package”, Aug. 2,
2013, DSH000162_001EN.
Major changes:
–Sensitivity at 25 °C changed
–Automotive applications removed
