TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Compact TO-220 package. Features * These Devices are Pb-Free and are RoHS Compliant* MAXIMUM RATINGS Rating Collector - Emitter Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG Symbol Value VCEO Unit Vdc 40 60 80 100 Collector - Base Voltage TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCB Emitter - Base Voltage VEB 5.0 Vdc IC 1.0 Adc ICM 3.0 Adc Base Current IB 0.4 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD 30 0.24 W W/C Total Power Dissipation @ TA = 25C Derate above 25C PD 2.0 0.016 W W/C Unclamped Inductive Load Energy (Note 1) E 32 mJ TJ, Tstg - 65 to + 150 C Collector Current - Continuous Collector Current - Peak Operating and Storage Junction Temperature Range www.onsemi.com 1 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80, 100 VOLTS, 80 WATTS Vdc 40 60 80 100 PNP NPN COLLECTOR 2,4 COLLECTOR 2,4 1 BASE 1 BASE 3 EMITTER 4 TO-220 CASE 221A STYLE 1 1 2 3 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V, IC = 1.8 A, P.R.F = 10 Hz TIPxxxG AYWW THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 62.5 C/W Thermal Resistance, Junction-to-Case RqJC 4.167 C/W TIPxxx A Y WW G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2014 November, 2014 - Rev. 13 1 3 EMITTER = Device Code: 29, 29A, 29B, 29C 30, 30A, 30B, 30C = Assembly Location = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Publication Order Number: TIP29B/D TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mAdc, IB = 0) (Note 2) TIP29G, TIP30G TIP29AG, TIP30AG TIP29BG, TIP30BG TIP29CG, TIP30CG VCEO(sus) Vdc 40 60 80 100 Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP29G, TIP29AG, TIP30G, TIP30AG (VCE = 60 Vdc, IB = 0) TIP29BG, TIP29CG, TIP30BG, TIP30CG ICEO Collector Cutoff Current (VCE = 40 Vdc, VEB = 0) TIP29G, TIP30G (VCE = 60 Vdc, VEB = 0) TIP29AG, TIP30AG (VCE = 80 Vdc, VEB = 0) TIP29BG, TIP30BG (VCE = 100 Vdc, VEB = 0) TIP29CG, TIP30CG ICES Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO - - - - mAdc - 0.3 - 0.3 mAdc - 200 - 200 - 200 - 200 - 1.0 40 15 - 75 - 0.7 - 1.3 3.0 - 20 - mAdc ON CHARACTERISTICS (Note 2) DC Current Gain (IC = 0.2 Adc, VCE = 4.0 Vdc) (IC = 1.0 Adc, VCE = 4.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 125 mAdc) VCE(sat) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc) VBE(on) - Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (Note 3) (IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz) fT Small-Signal Current Gain (IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz) hfe MHz - Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0% 3. fT = hfe* ftest www.onsemi.com 2 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) 3.0 2.0 500 TJ = 150C VCE = 2.0 V 25C 100 70 50 -55C 30 10 7.0 5.0 0.03 IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C ts t, TIME (s) hFE, DC CURRENT GAIN 300 1.0 0.7 0.5 0.3 0.2 tf @ VCC = 30 V tf @ VCC = 10 V 0.1 0.07 0.05 0.5 0.7 1.0 0.05 0.07 0.1 0.3 IC, COLLECTOR CURRENT (AMP) 0.03 0.03 3.0 0.2 0.3 0.5 0.7 1.0 VEB(off) VCC 2.0 RC SCOPE Vin 0.7 0.5 RB APPROX +11 V Cjd << Ceb t1 7.0 ns 100 < t2 < 500 ms t3 < 15 ns Vin t2 TURN-OFF PULSE t, TIME (s) t1 t3 -4.0 V 0.3 0.1 0.07 0.05 DUTY CYCLE 2.0% APPROX -9.0 V 0.03 0.02 0.03 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS. IC/IB = 10 TJ = 25C TJ = 150C 1 ms dc 0.1 SECOND BREAKDOWN LIMITED THERMALLY LIMITED @ TC = 25C BONDING WIRE LIMITED TIP29, 30 CURVES APPLY BELOW TIP29A, 30A RATED VCEO TIP29B, 30B TIP29C, 30C 0.1 1.0 4.0 20 40 10 VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS) tr @ VCC = 10 V td @ VEB(off) = 2.0 V 0.05 0.07 0.1 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 3.0 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on TJ(pk) = 150C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) 150C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 10 3.0 tr @ VCC = 30 V Figure 4. Turn-On Time Figure 3. Switching Time Equivalent Circuit IC, COLLECTOR CURRENT (AMPS) 3.0 Figure 2. Turn-Off Time 1.0 Vin 0 2.0 IC, COLLECTOR CURRENT (AMP) Figure 1. DC Current Gain TURN-ON PULSE APPROX +11 V 0.05 0.07 0.1 5 ms 100 Figure 5. Active Region Safe Operating Area www.onsemi.com 3 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) ORDERING INFORMATION Device Package Shipping TIP29G TO-220 (Pb-Free) 50 Units / Rail TIP29AG TO-220 (Pb-Free) 50 Units / Rail TIP29BG TO-220 (Pb-Free) 50 Units / Rail TIP29CG TO-220 (Pb-Free) 50 Units / Rail TIP30G TO-220 (Pb-Free) 50 Units / Rail TIP30AG TO-220 (Pb-Free) 50 Units / Rail TIP30BG TO-220 (Pb-Free) 50 Units / Rail TIP30CG TO-220 (Pb-Free) 50 Units / Rail www.onsemi.com 4 TIP29, A, B, C (NPN), TIP30, A, B, C (PNP) PACKAGE DIMENSIONS TO-220 CASE 221A-09 ISSUE AH -T- B F SEATING PLANE C T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q U 1 2 3 H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 www.onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative TIP29B/D