© Semiconductor Components Industries, LLC, 2014
November, 2014 Rev. 13
1Publication Order Number:
TIP29B/D
TIP29, A, B, C (NPN),
TIP30, A, B, C (PNP)
Complementary Silicon
Plastic Power Transistors
Designed for use in general purpose amplifier and switching
applications. Compact TO220 package.
Features
These Devices are PbFree and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector Emitter Voltage
TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG
VCEO 40
60
80
100
Vdc
Collector Base Voltage
TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG
VCB 40
60
80
100
Vdc
Emitter Base Voltage VEB 5.0 Vdc
Collector Current Continuous IC1.0 Adc
Collector Current Peak ICM 3.0 Adc
Base Current IB0.4 Adc
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD30
0.24
W
W/°C
Total Power Dissipation
@ TA = 25°C
Derate above 25°C
PD2.0
0.016
W
W/°C
Unclamped Inductive Load Energy
(Note 1)
E 32 mJ
Operating and Storage Junction
Temperature Range
TJ, Tstg 65 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. This rating based on testing with LC = 20 mH, RBE = 100 W, VCC = 10 V,
IC = 1.8 A, P.R.F = 10 Hz
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, JunctiontoAmbient RqJA 62.5 °C/W
Thermal Resistance, JunctiontoCase RqJC 4.167 °C/W
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO220
CASE 221A
STYLE 1
MARKING DIAGRAM
1 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
40, 60, 80, 100 VOLTS,
80 WATTS
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123
4
TIPxxx = Device Code:
29, 29A, 29B, 29C
30, 30A, 30B, 30C
A = Assembly Location
Y = Year
WW = Work Week
G=PbFree Package
TIPxxxG
AYWW
See detailed ordering and shipping information on page 4 of
this data sheet.
ORDERING INFORMATION
1
BASE
3
EMITTER
COLLECTOR
2,4
1
BASE
3
EMITTER
COLLECTOR
2,4
PNP NPN
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage
(IC = 30 mAdc, IB = 0) (Note 2)
TIP29G, TIP30G
TIP29AG, TIP30AG
TIP29BG, TIP30BG
TIP29CG, TIP30CG
VCEO(sus)
40
60
80
100
Vdc
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
TIP29G, TIP29AG, TIP30G, TIP30AG
(VCE = 60 Vdc, IB = 0)
TIP29BG, TIP29CG, TIP30BG, TIP30CG
ICEO
0.3
0.3
mAdc
Collector Cutoff Current
(VCE = 40 Vdc, VEB = 0)
TIP29G, TIP30G
(VCE = 60 Vdc, VEB = 0)
TIP29AG, TIP30AG
(VCE = 80 Vdc, VEB = 0)
TIP29BG, TIP30BG
(VCE = 100 Vdc, VEB = 0)
TIP29CG, TIP30CG
ICES
200
200
200
200
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
1.0
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 0.2 Adc, VCE = 4.0 Vdc)
(IC = 1.0 Adc, VCE = 4.0 Vdc)
hFE 40
15
75
CollectorEmitter Saturation Voltage
(IC = 1.0 Adc, IB = 125 mAdc)
VCE(sat)
0.7
Vdc
BaseEmitter On Voltage
(IC = 1.0 Adc, VCE = 4.0 Vdc)
VBE(on)
1.3
Vdc
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product (Note 3)
(IC = 200 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)
fT3.0
MHz
SmallSignal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 kHz)
hfe 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%
3. fT = hfe⎪• ftest
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
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3
0.03
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
0.03
hFE, DC CURRENT GAIN
0.5
5.0
70
3.0
100
7.0
300
30
0.1 0.3
0.07 1.0
TJ = 150°C
25°C
-55°C
VCE = 2.0 V
500
10
50
3.0
t, TIME (s)μ
Figure 2. TurnOff Time
IC, COLLECTOR CURRENT (AMP)
IB1 = IB2
IC/IB = 10
ts = ts - 1/8 tf
TJ = 25°C
ts
TURN-ON PULSE
APPROX
+11 V
Vin 0
VEB(off) t1
APPROX
+11 V
Vin
t2
TURN-OFF PULSE
t3
t1 7.0 ns
100 < t2 < 500 ms
t3 < 15 ns
DUTY CYCLE 2.0%
APPROX -9.0 V
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
SCOPE
RC
RB
VCC
Vin
Cjd << Ceb
-4.0 V
Figure 3. Switching Time Equivalent Circuit
0.03
Figure 4. TurnOn Time
IC, COLLECTOR CURRENT (AMP)
0.02 0.1 3.0
0.07
1.0
1.0
IC/IB = 10
TJ = 25°C
tr @ VCC = 10 V
t, TIME (s)μ
0.5
0.3
0.1
0.05
0.05 0.3 0.5
td @ VEB(off) = 2.0 V
0.03
0.7
2.0
0.07 0.7
tr @ VCC = 30 V
0.05 0.7
tf @ VCC = 10 V
tf @ VCC = 30 V
0.07
1.0
0.5
0.3
0.1
0.05
0.03
0.7
2.0
0.2
0.1 3.01.00.05 0.3 0.50.07 0.7 2.00.2
Figure 5. Active Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE, (VOLTS)
10
0.1 10
SECOND BREAKDOWN LIMITED
THERMALLY LIMITED @ TC = 25°C
BONDING WIRE LIMITED
IC, COLLECTOR CURRENT (AMPS)
1.0 20 10
0
40
3.0
4.0
0.1
TIP29, 30
TIP29A, 30A
TIP29B, 30B
TIP29C, 30C
TJ = 150°C
CURVES APPLY BELOW
RATED VCEO
1 ms
dc
5 ms
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150°C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
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4
ORDERING INFORMATION
Device Package Shipping
TIP29G TO220
(PbFree)
50 Units / Rail
TIP29AG TO220
(PbFree)
50 Units / Rail
TIP29BG TO220
(PbFree)
50 Units / Rail
TIP29CG TO220
(PbFree)
50 Units / Rail
TIP30G TO220
(PbFree)
50 Units / Rail
TIP30AG TO220
(PbFree)
50 Units / Rail
TIP30BG TO220
(PbFree)
50 Units / Rail
TIP30CG TO220
(PbFree)
50 Units / Rail
TIP29, A, B, C (NPN), TIP30, A, B, C (PNP)
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5
PACKAGE DIMENSIONS
TO220
CASE 221A09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.570 0.620 14.48 15.75
B0.380 0.415 9.66 10.53
C0.160 0.190 4.07 4.83
D0.025 0.038 0.64 0.96
F0.142 0.161 3.61 4.09
G0.095 0.105 2.42 2.66
H0.110 0.161 2.80 4.10
J0.014 0.024 0.36 0.61
K0.500 0.562 12.70 14.27
L0.045 0.060 1.15 1.52
N0.190 0.210 4.83 5.33
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.15 1.39
T0.235 0.255 5.97 6.47
U0.000 0.050 0.00 1.27
V0.045 --- 1.15 ---
Z--- 0.080 --- 2.04
B
Q
H
Z
L
V
G
N
A
K
F
123
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
TIP29B/D
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