a? HARRIS 2N6755 2N6756 N-Channel Enhancement-Mode August 1991 Power Field-Effect Transistors Features Package TO-204AA 12A and 14A, 60V - 100V BOTTOM VIEW * DS(on) = 0.182 and 0.250 * SOA is Power-Dissipation Limited SOURCE (FLANGE) * Nanosecond Switching Speeds Linear Transfer Characteristics * High Input Impedance Majority Carrier Device Description The 2N6755 and 2N6756 are n-channel enhancement-mode | Terminal Diagram silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, N-CHANNEL ENHANCEMENT MODE relay drivers, and drivers for high-power bipolar switching 5 transistors requiring high speed and low gate-drive power. These D a kL types can be operated directly from integrated circuits. < 8 These types are supplied in the JEDEC TO-204AA steel package. = = Qu G z= o a s Absolute Maximum Ratings (To = +25C) Unless Otherwise Specified 2N6755 2N6756 UNITS Drain-Source Voltage .... 0c. eee cece cece cect ence etn n enone Vos 60* 100* v Drain-Gate Voltage (RGS = 20K)... eee eee ee ene VpDGR 60* 100* v Continuous Drain Current Te H259C cece ec cede tent e seen ener eee 12* 14* A To =+1009C .......... sees 8.0* 9.0* A Pulsed Drain Current 25 30 A Gate-Source Valtage +20 +20 Vv Maximum Power Dissipation To = +2506 (See FIG. 11) ok cece cece eee e eter ete eet e tee enene Pp 75* 75* w To = +1009C (See Fig. 11) . 30* 30* Ww Linear Derating Factor (See Fig. 11) sane sees 0.6* 0.6* Ww/9G Inductive Current, Clamped 0.0.0... 0. cece cece erence rete ene eenane 25 30 A (See Figures 1 and 2, L = 100uH) Operating and Storage Junction Temperature Range -55 to +150* -55 to +150* C Maximum Lead Temperature for Soldering ............:eseeeeeeeeeees 300* 307* C (0.063 (1.6mm) from case for 10s} *JEDEC registered values CAUTION: These devices are sensitive to elecirostatic discharge. Proper I.C. handling procedures should be fallowed. File Number 1 586.1 Copyright Harris Corporation 1991 4-7Specifications 2N6755, 2N6756 Electrical Characteristics @ Tc = 25C (Uniess Otherwise Specified) Parameter Tyoe | Min. | Typ. | Max. | Units Tast Conditions BVoss Drain Source Breakdown Voltage | 2N6755 | 60 - : v__ | Vgg=0 2N6756 | 100 - - Vv | ip =1.0ma V@stth) Gate Threshold Voltage ALL | 20 ~ 4.0 Vv | Vos = Yes. = tema Igssr Gate Body Leakage Forward ALL - - wor [AA | Vgg = 20V Igssr Gate Body Leakage Reverse ALL = - wor | nA | Vgg = -20V 'pss Zero Gate Voltage Drain Current ALL = 0.1 10 | mA | Vg = Max. Rating, Vgg <0 02 [ 40 | mA | Vog = Max. Rating, Vgg = 0, Te = 125C Vosion) Static Drain-Source On-State 2ne755 | - 3.0 Vv | Ygg = 10V. Ip = 124 ! 7 Volvage ) 2NG756 252 | v | Vgg= 10V, Ig = 148 Roston) Statc Grain-Source OrrState 2N6755 - 0.20 0.25 Rn Vgs = 10V. Ip = 8a Resistance QO 2N6756 | 0.14 | 018 2 | Veg = 10V. Ip = 9A Rosion) Static Drain-Source On-State 2NB75S - = 045 a | Vgg= 10V. Ip - 8A, Te = 125C Resistance (1) 5 2ne756 | = 033 | 2 | Vgg= 10V, Ip: 9A, Ty = 125C ty Forward Transconductance (7) ALL 4.0" 55 12.0" | StU) | Vpg 15V, Ip. 9A C Input Capacitance ALL 350 600 800 pe ii Vag +0. Vpg = 26V, f= 1.0 MHz C, Output Capacitance ALL | 150 | 300 [| soo> | pF os See Fig. 10 Crs Reverse Transter Capacitance ALL sor | 100 | 150 | pF ta (on) Turn-On Delay Time ALL - 30 ns | Vpn = 36V, Ip - 9A, Z, ~~ 150 ty Rise Time ALL 75 As | (See Figs. 13 and 14) ta lofty Turn-Oft Delay Time ALL - - 40 ns | (MOSFET switching times are essentially % Fail Time ALL = = 45 ns | independent of operating temperature.) Rinse Junction-to-Case ALL = 167] C. Ww Aincs _ Cate-to-Sink ALL 0.1 - CAW | Mounting surtace flat, smooth, and gressed Ainsa Junction-to-Ambient ACL - - 30 | C/W | Free Air Operation Body-Drain Diode Ratings and Characteristics ls Continuous Saurce Current 2N6755 12 a | Modified MOSFET symbol 90 (Body Diode) = . | showing the integral I 2N6756 4 { reverse P-N junction rectitier 4 ) rv Pulsed Source Current 2N6755 = 25 a G {Body Diode) 2N6756 30 "Ts | sp Osode Forward Vattage 2N6755 | 0.85 ~ 7 V [Te = 288C, Is = 128, gs - 0 ' 2N6756 | 0.90 18 vo oT Te 28C. 1g 148. VGg 0 . } ec Reverse Recovery Time ALL 300 ns : Ty = 150C, lp = beng, dig /dt = 100 Afus OgR _ Reverse Recovered Charge ALL - 4.0 uC | Ty = 150C, 1g = bgua, dig sat = 100 Alus *JEDEC registered values VARY ty TO O8TAIN REQUIRED PEAK 1, Vgg = 20 ip. ORAIN CURRENT (AMPERES) out ua Fig. 1 Clamped Inductive Test Circuit us PULSE TEST 10 Vos. DRAIN TO SOURCE VOLTAGE (VDLTS) 20 30 40 Fig. 3 Typical Output Characteristics E, = 0.58Vggs FH Ve = 0.758V p55 G) Pulse Test Pulse Width < 300 usec, Duty Cycle < 2% 'p. DRAIN CURRENT {AMPERES} Fig. 2 Clamped Inductive Waveforms Ws PULSE TEST Vpg = 16 4 Vs, GATE TO-SOURCE VOLTAGE (VOLTS) 6 8 Ww Fig. 4 Typical Transfer Characteristics2N6755, 2N6756 OO us PULSE TEST 8 8 2 2 s = a6 = S 2 z = 5 3 z4 af e 2 2 YES > 0 04 as 12 16 20 . Vos. OAAIN TO SOURCE VOLTAGE (VOLTS! Fig. 5 Typical Saturation Characteristics (2N6755) 10 i | 4 athe fe p foe EL L444 - ze a 2 2 = Poo} | Ty = -589 S 3 = a 2 gf1f eT] asoe_ fd = z 7 Z 5 L144 |. - s a (7 Ty = 1250C 2 z g { to 4 < 2 | < i t- spent peepee ff 3 2 Vos 2 pf fe pt tt 00 us PULSE TEST 4 4 | 0 5 10 15 20 5 Ip. DRAIN CURRENT (AMPERES) Fig. 7 Typical Transconductance Vs. Drain Current 2? = w w _ 2 = a 1B a a 2 = ~ Zz. 4 a 66 = BR ia 3 aa @ Qe m ex 3 go = re Zoe 4 S < S a = . 5 I g a t = 56F ig 9A an Pid ts op Lod. | _ | i 40 a 40 80 120 160 Ty, JUNCTION TEMPERATURE (C) Fig.9 Normalized Typical On-Resistance Vs. Temperature Fig 4-9 ip, ORAIN CURRENT (AMPERES! BO y1 PULSE 0 oa os 12 16 24 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 6 Typical Saturation Characteristics (2N6756} 20 $.4 2.0 as 4050 ti) 20 50 100 200 Vos. DRAIN TO-SOURCE VOLTAGE [VOLTS Fig. 8 Maximum Safe Operating Area 1600 1200 boo aa Py 4 on 1 E 400 a 0 20 30 40 50. Ving. DRAIN TG SQUACE VOLTAGE (VOLTS) |. 10 Typical Capacitance Vs. Drain-to-Source Voltage G dae Z3 <= ra ze o a2N6755, 2N6756 a0 Po, POWER DISSIPATION (WATTS} 0 }--4 0 | | | 20 Hh 1 f} +t \ t a a 2 40 660 BOD Tc. CASE TEMPERATURE (C) Fig. 11 Power Vs. Temperature Derating Curve Von = 36 an PRE = 1 kHz Yo Woo Tas TO SCOPE r----- 1 | | t vw Fig. 13 Switching Time Test Circuit 4-10 ign. 2N6756 2N6756 a Ty = 150C Ty = 280C Ig, SOURCE CURRENT {AMPERES} a 1 2 Vgp, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Fig. 12 Typical Body-Drain Diode Forward Voltage bo PULSE WIOTH VGs on} 7 INPUT, V, 50% 50% 10%, 10% VGs (off) INPUT PULSE INPUT PULSE | RISE TIME [FALL TIME i (ony ty {off} v tr] y| OS (ott) OUTPUT, Vg Vos (on) n Fig. 14 Switching Time Waveforms