Bulletin PD-20742 rev. C 02/06 80EBU04 Ultrafast Soft Recovery Diode Features * Ultrafast Recovery * 175C Operating Junction Temperature * Screw Mounting Only * Lead-Free Plating trr = 50ns (typ) IF(AV) = 80Amp VR = 400V Benefits * Reduced RFI and EMI * Higher Frequency Operation * Reduced Snubbing * Reduced Parts Count Description/ Applications These diodes are optimized to reduce losses and EMI/ RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. Absolute Maximum Ratings Max Units VR Parameters Cathode to Anode Voltage 400 V IF(AV) Continuous Forward Current, TC = 101C 80 A IFSM Single Pulse Forward Current, TC = 25C 800 IFRM Maximum Repetitive Forward Current TJ, TSTG Operating Junction and Storage Temperatures 160 - 55 to 175 C Square Wave, 20kHz Case Styles PowIRtab www.irf.com 1 80EBU04 Bulletin PD-20742 rev. C 02/06 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions VBR, Vr Breakdown Voltage, Blocking Voltage 400 - - V IR = 100A VF Forward Voltage - 1.1 1.3 V IF = 80A - 0.92 1.08 V IF = 80A, TJ = 175C - 0.98 1.15 IR Reverse Leakage Current V IF = 80A, TJ = 125C - - 50 A VR = VR Rated - - 2 mA TJ = 150C, VR = VR Rated CT Junction Capacitance - 50 - pF VR = 200V LS Series Inductance - 3.5 - nH Measured lead to lead 5mm from package body Dynamic Recovery Characteristics @ TJ = 25C (unless otherwise specified) Parameters trr Reverse Recovery Time IRRM Qrr Peak Recovery Current Reverse Recovery Charge Min Typ Max Units Test Conditions - 50 60 - 87 - ns IF = 1A, diF/dt = 200A/s, VR = 30V IF = 80A TJ = 25C VR = 200V TJ = 125C - 151 - - 9.3 - - 17.2 - - 405 - nC - 1300 - A diF /dt = 200A/s TJ = 25C TJ = 125C TJ = 25C TJ = 125C Thermal - Mechanical Characteristics Parameters RthJC Thermal Resistance, Junction to Case RthCS Thermal Resistance, Case to Heatsink Wt Weight Min Typ Max Units 0.70 K/W 5.02 g 0.2 0.18 T Mounting Torque (oz) 1.2 2.4 N*m 10 20 lbf.in Mounting Surface, Flat, Smooth and Greased 2 www.irf.com 80EBU04 Bulletin PD-20742 rev. C 02/06 1000 1000 100 Reverse Current - I R (A) Instantaneous Forward Current - I F (A) T J = 175C 100 T = 175C 125C 10 1 25C 0.1 0.01 0.001 J 0 100 T = 125C 200 300 400 Reverse Voltage - VR (V) J Fig. 2 - Typical Values Of Reverse Current Vs. Reverse Voltage T = 25C J Junction Capacitance - C T (pF) 1000 10 T J = 25C 100 10 1 0 0.5 1 1.5 2 1 2.5 Forward Voltage Drop - VFM (V) 10 100 1000 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance Vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics Thermal Impedance Z thJC (C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 Single Pulse (Thermal Resistance) Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Max. Thermal Impedance Z thJC Characteristics www.irf.com 3 80EBU04 Bulletin PD-20742 rev. C 02/06 140 RMS Limit Average Power Loss ( Watts ) Allowable Case Temperature (C) 180 160 140 DC 120 100 Square wave (D = 0.50) 80% Rated Vr applied 80 120 100 80 40 20 see note (3) 60 0 0 20 40 60 80 100 120 0 Average Forward Current - IF(AV) (A) 20 40 60 80 100 120 Average Forward Current - IF(AV) (A) Fig. 5 - Max. Allowable Case Temperature Vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics 4500 250 Vr = 200V Tj = 125C Tj = 25C 4000 Vr = 200V Tj = 125C Tj = 25C 3500 200 IF = 160A IF = 80A IF = 40A 3000 Qrr ( nC ) trr ( ns ) D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 60 150 IF = 160A IF = 80A IF = 40A 2500 2000 1500 100 1000 500 50 100 di F /dt (A/s ) 1000 Fig. 7 - Typical Reverse Recovery time vs. di F /dt 0 100 di F /dt (A/s ) 1000 Fig. 8 - Typical Stored Charge vs. di F /dt (3) Formula used: TC = TJ - (Pd + PdREV) x RthJC ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6); PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR 4 www.irf.com 80EBU04 Bulletin PD-20742 rev. C 02/06 Reverse Recovery Circuit VR = 200V 0.01 L = 70H D.U.T. di F /dt dif/dt ADJUST D IRFP250 G S Fig. 9- Reverse Recovery Parameter Test Circuit 3 trr IF tb ta 0 Q rr 2 I RRM 4 0.5 I RRM di(rec)M/dt 5 0.75 I RRM 1 /dt di fF/dt 1. diF/dt - Rate of change of current through zero crossing 2. IRRM - Peak reverse recovery current 3. trr - Reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current 4. Qrr - Area under curve defined by t rr and IRRM t rr x I RRM Q rr = 2 5. di (rec) M / dt - Peak rate of change of current during t b portion of t rr Fig. 10 - Reverse Recovery Waveform and Definitions www.irf.com 5 80EBU04 Bulletin PD-20742 rev. C 02/06 Outline Table Dimensions in millimeters and (inches) Ordering Information Table Device Code 80 E B U 04 1 2 3 4 5 1 - Current Rating 2 - Single Diode 3 - PowIRtab 4 - Ultrafast Recovery 5 - Voltage Rating (80 = 80A) (Ultrafast/ Hyperfast only) (04 = 400V) Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level and Lead-Free. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/06 6 www.irf.com