MBR120VLSFT1G - ON SEMICONDUCTOR

October, 2014 − Rev. 4 1Publication Order Number:

MBR120VLSFT1/D

MBR120VLSF,

NRVB120VLSF

Surface Mount

Schottky Power Rectifier

Plastic SOD−123 Package

This device uses the Schottky Barrier principle with a large area

metal−to−silicon power diode. Ideally suited for low voltage, high

frequency rectification or as free wheeling and polarity protection

diodes in surface mount applications where compact size and weight

are critical to the system. This package also provides an easy to work

with alternative to leadless 34 package style. Because of its small size,

it is ideal for use in portable and battery powered products such as

cellular and cordless phones, chargers, notebook computers, printers,

PDAs and PCMCIA cards. Typical applications are AC−DC and

DC−DC converters, reverse battery protection, and “Oring” of

multiple supply voltages and any other application where performance

and size are critical.

Features

•Guardring for Stress Protection

•Optimized for Very Low Forward Voltage

•125°C Operating Junction Temperature

•Epoxy Meets UL 94 V−0 @ 0.125 in

•Package Designed for Optimal Automated Board Assembly

•ESD Ratings: Machine Model, C;

Human Body Model, 3B

•NRVB Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Mechanical Characteristics

•Reel Options: MBR120VLSFT1G = 3,000 per 7″ reel/8 mm tape

MBR120VLSFT3G = 10,000 per 13″ reel/8 mm tape

•Device Marking: L2V

•Polarity Designator: Cathode Band

•Weight: 11.7 mg (approximately)

•Case: Epoxy, Molded

•Finish: All External Surfaces Corrosion Resistant and Terminal

Leads are Readily Solderable

•Lead and Mounting Surface Temperature for Soldering Purposes:

260°C Max. for 10 Seconds

•Device Meets MSL 1 Requirements

SCHOTTKY BARRIER

RECTIFIER

1.0 AMPERES

20 VOLTS

http://onsemi.com

Device Package Shipping†

ORDERING INFORMATION

MBR120VLSFT1G SOD−123FL

(Pb−Free) 3000 / Tape &

Reel

MBR120VLSFT3G SOD−123FL

(Pb−Free) 10000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer t o our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

SOD−123FL

CASE 498

L2VMG

MARKING DIAGRAM

L2V = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

NRVB120VLSFT1G SOD−123FL

(Pb−Free) 3000 / Tape &

Reel

MBR120VLSF, NRVB120VLSF

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

20 V

Average Rectified Forward Current

(Rated VR) TL = 11 9 °CIF(AV) 1.0 A

Non−Repetitive Peak Surge Current

(Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 45 A

Storage Temperature Range Tstg −65 to +125 °C

Operating Junction Temperature TJ−65 to +125 °C

Voltage Rate of Change (Rated VR) dv/dt 1000 V/ms

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be af fected.

THERMAL CHARACTERISTICS

Characteristic Symbol Value Unit

Thermal Resistance − Junction−to−Lead (Note 1)

Thermal Resistance − Junction−to−Lead (Note 2)

Thermal Resistance − Junction−to−Ambient (Note 1)

Thermal Resistance − Junction−to−Ambient (Note 2)

Rtjl

Rtja

325

°C/W

1. Mounted with minimum recommended pad size, PC Board FR4.

2. Mounted with 1 in. copper pad (Cu area 700 mm2).

ELECTRICAL CHARACTERISTICS

Characteristic Symbol TJ = 255C TJ = 855C Unit

Maximum Instantaneous Forward Voltage (Note 3)

(IF = 0.1 A)

(IF = 0.5 A)

(IF = 1.0 A)

VF0.275

0.315

0.340

0.205

0.270

0.300

Maximum Instantaneous Reverse Current (Note 3)

(Rated DC Voltage) IR0.60 15 mA

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%.

MBR120VLSF, NRVB120VLSF

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IF, INSTANTANEOUS FORWARD CURRENT (AMPS)

, INSTANTANEOUS FORWARD CURRENT (AMPS)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)

VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE

(VOLTS)

0.1 0.30.1 0.2 0.6

TJ = 85°C

TJ = 125°C

TJ = −55°C

TJ = 25°C

0.1

0.1 0.40.2 0.3 0.

TJ = 85°C

TJ = 125°C

TJ = 25°C

0.50.4

IR, MAXIMUM REVERSE CURRENT (AMPS)

, REVERSE CURRENT (AMPS)

Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current

200

VR, REVERSE VOLTAGE (VOLTS)

100E−3

10E−3

1E−3

100E−6

10E−6

VR, REVERSE VOLTAGE (VOLTS)

51015 2

100E−6

10E−6 51015

TJ = 125°C

TJ = 85°C

TJ = 25°C

100E−3

10E−3

1E−3

TJ = 125°C

TJ = 85°C

TJ = 25°C

SQUARE

WAVE

IO, AVERAGE FORWARD CURRENT (AMPS)

Figure 5. Current Derating

TL, LEAD TEMPERATURE (°C)

4525

1.8

1.2

1.0

0.6

0.2

085 105

0.8

65 125

0.4

PFO, AVERAGE POWER DISSIPATION (WATTS)

Figure 6. Forward Power Dissipation

IO, AVERAGE FORWARD CURRENT (AMPS)

0.20

0.5

0.3

0.1

01.00.4 0.8 1.2 1.6

0.4

0.6 1.4

0.2

1.4

1.6

Ipk/Io = 20

Ipk/Io = 10

Ipk/Io = 5

Ipk/Io = p

SQUARE

WAVE

dc freq = 20 kHz

Ipk/Io = p

Ipk/Io = 5

Ipk/Io = 10

Ipk/Io = 20

MBR120VLSF, NRVB120VLSF

http://onsemi.com

C, CAPACITANCE (pF)

120

VR, REVERSE VOLTAGE (VOLTS)

500

100

048

TJ = 25°C

2016

Figure 7. Capacitance

TJ, DERATED OPERATING

TEMPERATURE (°C)

120

VR, DC REVERSE VOLTAGE (VOLTS)

125

100

65 6.02.0 4.0 8.0 10 2014 16 18

Figure 8. Typical Operating Temperature

Derating*

* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-

verse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating

TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where

r(t) = thermal impedance under given conditions,

Pf = forward power dissipation, and

Pr = reverse power dissipation

This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,

where r(t) = Rthja. For other power applications further calculations must be performed.

105

110

115

120

RqJA = 25.6°C/W

400°C/W

324.9°C/W

235°C/W

130°C/W

1026 1814

200

300

400

r(t), TRANSIENT THERMAL RESISTANCE

Figure 9. Thermal Response

100

0.10.00001

t1, TIME (sec)

1000

0.0001 0.001 0.01 1 10 1000.000001

0.1

100

P(pk)

DUTY CYCLE, D = t1/t2

qJA = 321.8 °C/W

Test Type > Min Pad < Die Size 38x38 @ 75% mils

D = 0.5

SINGLE PULSE

0.2

0.1

0.05

0.01

MBR120VLSF, NRVB120VLSF

http://onsemi.com

PACKAGE DIMENSIONS

SOD−123FL

CASE 498

ISSUE D

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH.

4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION

OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP.

AA1

POLARITY INDICATOR

OPTIONAL AS NEEDED

ÉÉÉÉ

ÉÉÉ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.90 0.95 0.98 0.035

INCHES

A1 0.00 0.05 0.10 0.000

b0.70 0.90 1.10 0.028

c0.10 0.15 0.20 0.004

D1.50 1.65 1.80 0.059

E2.50 2.70 2.90 0.098

L0.55 0.75 0.95 0.022

0.037 0.039

0.002 0.004

0.035 0.043

0.006 0.008

0.065 0.071

0.106 0.114

0.030 0.037

NOM MAX

3.40 3.60 3.80 0.134 0.142 0.150

HE− −

0°8°0°8°

TOP VIEW

BOTTOM VIEW

SIDE VIEW

END VIEW

RECOMMENDED

DIMENSIONS: MILLIMETERS

1.25

4.20

1.22

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MBR120VLSFT1/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc

Sales Representative

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