ABB Semiconductors AG reserves the right to change specifications without notice.
VRRM = 2500 V
IFAVM = 950 A
IFSM =21kA
VF0 =1.2V
rF=0.38
mΩ
ΩΩ
Ω
VDClink = 1500 V
Doc. No. 5SYA1113-04 Sep. 01
• Patented free-floating silicon technology
• Low on-state and switching losses
• Optimized for use as freewheeling diode in GTO converters
• Standard press-pack housing, hermetically cold-welded
• Cosmic radiation withstand rating
Blocking
VRRM Repetitive peak reverse voltage 2500 V Half sine wave, tP = 10 ms, f = 50 Hz
IRRM Repetitive peak reverse current ≤50 mA VR = VRRM, Tj = 125°C
VDClink Permanent DC voltage for 100 FIT
failure rate 1500 V 100% Duty
VDClink Permanent DC voltage for 100 FIT
failure rate V5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data (see Fig. 12)
min. 20 kN
FmMounting force max. 24 kN
aAcceleration:
Device unclamped
Device clamped
50
200
m/s2
m/s2
m Weight 0.46 kg
DSSurface creepage distance ≥30 mm
DaAir strike distance ≥20 mm
Fast Recovery Diode
5SDF 11F2501
5SDF 11F2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01 page 2 of 6
On-state (see Fig. 2, 3)
IFAVM Max. average on-state current 950 A
IFRMS Max. RMS on-state current 1500 A
Half sine wave, Tc = 85°C
IFSM Max. peak non-repetitive 21 kA tp = 10 ms Before surge:
surge current 65 kA tp = 1 ms Tc = Tj = 125°C
2.2⋅106A2stp= 10ms
After surge:
òI2dt Max. surge current integral
2.1⋅106A2stp= 1ms
VR ≈ 0 V
VFForward voltage drop ≤1.6 V IF= 1000 A
VF0 Threshold voltage 1.2 V Approximation for
rFSlope resistance 0.38 mΩIF= 400…4000 A
Tj = 125°C
Turn-on (see Fig. 4, 5)
Vfr Peak forward recovery voltage ≤16 V di/dt = 500 A/µs, Tj = 125°C
Turn-off (see Fig. 6 to 11)
Irr Reverse recovery current ≤550 A
Qrr Reverse recovery charge ≤1200 µC
Err Turn-off energy ≤0.45 J
di/dt = 300 A/µs, IF = 700 A,
Tj = 125°C, VRM = 2600 V,
CS = 2µF (GTO snubber circuit)
Thermal (see Fig. 1)
TjOperating junction temperature range -40...125°C
Tstg Storage temperature range -40...125°C
RthJC Thermal resistance junction to case ≤40 K/kW Anode side cooled
≤40 K/kW Cathode side cooled
≤20 K/kW Double side cooled
RthCH Thermal resistance case to heatsink ≤10 K/kW Single side cooled
Fm =
20… 24 kN
≤5 K/kW Double side cooled
Analytical function for transient thermal impedance.
i1234
R i(K/kW) 11.83 4.26 1.63 2.28
τi(s) 0.432 0.071 0.01 0.0054
)e-(1R = (t)Z
n
1i
/t-
ithJC å
=
i
τ
Fm = 20… 24 kN Double side cooled
5SDF 11F2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01 page 3 of 6
Fig. 1 Transient thermal impedance (junction-to-case) vs. time in analytical and graphical form (max. values).
Fig. 2 Forward current vs. forward voltage (typ.
and max. values) and linear approximation
of max. curve at 125°C.
Fig. 3 Surge current and fusing integral vs. pulse
width (max. values) for non-repetitive, half-
sinusoidal surge current pulses.
5SDF 11F2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01 page 4 of 6
Fig. 4 Typical forward voltage waveform when the
diode is turned on with a high di/dt.
Fig. 5 Forward recovery voltage vs. turn-on di/dt
(max. values).
Fig. 6 Typical current and voltage waveforms at turn-off when the diode is connected to an RCD snubber, as
often used in GTO circuits.
5SDF 11F2501
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1113-04 Sep. 01 page 5 of 6
Fig. 7 Reverse recovery current vs. turn off di/dt
(max. values).
Fig. 8 Reverse recovery charge vs. turn off di/dt
(max. values).
Fig. 9 Turn-off energy vs. turn-off di/dt for IF = 300
A (max. values).
Fig. 10 Turn-off energy vs. turn-off di/dt for IF = 700
A (max. values).
5SDF 11F2501
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1113-04 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig. 11 Turn-off energy vs. turn-off di/dt for IF = 2000
A (max. values).
Fig. 12 Outline drawing. All dimensions are in
millimeters and represent nominal values
unless stated otherwise.
