STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA T YPE ST P2NA50 ST P2NA50FI V DSS R DS(o n) ID 500 V 500 V <4 <4 2.8 A 2A TYPICAL RDS(on) = 3.25 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 2 3 3 1 TO-220 APPLICATIONS MEDIUM CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CONSUMER AND INDUSTRIAL LIGHTING 2 ISOWATT220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP2NA50 Unit STP2NA50F I V DS Drain-Source Voltage (V gs = 0) 500 V VDGR Drain-Gate Voltage (Rgs = 20 K) 500 V V GS Gate-Source Voltage 30 V o ID Drain-Current (continuous) at Tc = 25 C 2.8 2 A ID Drain-Current (continuous) at Tc = 100 C o 1.8 1.25 A 11.2 11.2 A I DM (*) P t ot V ISO T stg Tj Drain-Current (Pulsed) o Total Dissipation at T c = 25 C 75 35 W Derating Factor 0.6 0.28 W/ o C - 4000 Insulation W ithstand Voltage (DC) Storage T emperature Max Operating Junction T emperature V -65 to 150 o C 150 o C (*)Pulse width limited by safe operating area March 1996 1/6 STP2NA50/FI THERMAL DATA R t hj-ca se Thermal Resistance Junction-case R t hj- amb R thc- si nk Tl Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose Max TO 220 IS OW ATT 220 1.67 3.57 62.5 0.5 300 o C/W o C/W C/W o C o AVALANCHE CHARACTERISTICS Symb ol Max Valu e Unit I AR Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, < 1%) Parameter 2.8 A E AS Single Pulse Avalanche Energy o (starting Tj = 25 C, ID = I AR , V DD = 50 V) 42 mJ E AR Repetitive Avalanche Energy (pulse width limited by Tj max, < 1%) 1.6 mJ I AR Avalanche Current, Repetitive or Not-Repetitive o (T c = 100 C, pulse width limited by Tj max, < 1%) 1.8 A ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symb ol V (BR)DSS Parameter Drain-source Breakdown Voltage Test Cond ition s I D = 250 A V GS = 0 Min. Typ . Max. 500 Un it V I DSS Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C 250 1000 A A I GSS Gate-Source Leakage Current (V DS = 0) V GS = 30 V 100 mA Typ . Max. Un it 3 3.75 V 3.25 4 8 ON () Symb ol Parameter Test Cond ition s = 250 A V GS(th) Gate T hreshold Voltage V DS = VGS R DS( on) Static Drain-source On Resistance V GS = 10 V V GS = 10 V On State Drain Current V DS > I D(on) x R DS(on) max V GS = 10 V ID(o n) ID I D = 1.4 A ID = 1.4 A Min. 2.25 T c = 100 oC 2.8 A DYNAMIC Symb ol g fs () C iss C oss C rss 2/6 Parameter Test Cond ition s Forward Transconductance V DS > I D(on) x R DS(on) max I D = 1.4 A Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V V GS = 0 f = 1 MHz Min. Typ . 0.8 2 300 55 15 Max. Un it S 400 70 20 pF pF pF STP2NA50/FI ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symb ol t d(on) tr (di/dt) on Qg Q gs Q gd Typ . Max. Un it Turn-on T ime Rise Time Parameter V DD = 250 V R G = 4.7 Test Cond ition s I D = 1.4 A V GS = 10 V 7 8 10 11 ns ns Turn-on Current Slope V DD = 400 V R G = 47 I D = 2.8 A V GS = 10 V 350 Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V V GS = 10 V 18 5.5 7 25 nC nC nC Typ . Max. Un it 7 7 14 10 10 20 ns ns ns Typ . Max. Un it 2.8 11.2 A A 1.6 V ID =2.8 A Min. A/s SWITCHING OFF Symb ol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall T ime Cross-over T ime Test Cond ition s V DD = 400 V R G = 4.7 Min. I D = 2.8 A V GS = 10 V SOURCE DRAIN DIODE Symb ol Parameter Test Cond ition s I SD I SDM (*) Source-drain Current Source-drain Current (pulsed) V SD () Forward O n Voltage I SD = 2.8 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 2.8 A V DD = 100 V t rr Q rr I RRM Min. V GS = 0 di/dt = 100 A/s o T j = 150 C 380 ns 4.4 C 23 A () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area 3/6 STP2NA50/FI TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 0.106 G1 2.4 2.7 0.094 H2 10.0 10.40 0.393 L2 0.409 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 4/6 L4 P011C STP2NA50/FI ISOWATT220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.4 0.7 0.015 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 0.204 G 4.95 5.2 0.195 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 30.6 1.126 L2 16 L3 0.630 28.6 1.204 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 O 3 3.2 0.118 0.126 B D A E L4 L3 L6 F F1 L7 F2 H G G1 1 2 3 L2 L4 P011G 5/6 STP2NA50/FI Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 6/6