STP2NA50
STP2NA50FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTOR
PRELIMINARY DATA
■TYPICAL RDS(on) =3.25 Ω
■±30V GATE TO SOURCE VOLTAGE RATING
■100% AVALANCHE TESTED
■REPETITIVE AVALANCHEDATA AT 100oC
■LOW INTRINSIC CAPACITANCES
■GATECHARGE MINIMIZED
■REDUCED THRESHOLD VOLTAGESPREAD
APPLICATIONS
■MEDIUMCURRENT, HIGHSPEED
SWITCHING
■SWITCH MODE POWER SUPPLIES (SMPS)
■CONSUMER AND INDUSTRIAL LIGHTING INTERNAL SCHEMATIC DIAGRAM
TYPE VDSS RDS(on) ID
STP2NA50
STP2NA50FI 500 V
500 V <4Ω
<
4 Ω 2.8 A
2A
March 1996
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
STP2NA50 STP2NA50FI
VDS Drain-Source Voltage (Vgs = 0) 500 V
VDGR Drain-Gate Voltage (Rgs =20KΩ) 500 V
VGS Gate-Source Voltage ± 30 V
IDDrain-Current (continuous) at Tc=25
o
C2.82A
I
D
Drain-Current (continuous) at Tc=100
o
C1.81.25A
I
DM(•) Drain-Current (Pulsed) 11.2 11.2 A
Ptot Total Dissipation at Tc=25
o
C7535W
Derating Factor 0.6 0.28 W/oC
VISO Insulation Withstand Voltage (DC) - 4000 V
Tstg Storage Temperature -65 to 150 oC
TjMax Operating Junction Temperature 150 oC
(•)Pulse width limited by safe operating area
123
TO-220 ISOWATT220
123
1/6
THERMAL DATA
TO220 ISOWATT220
Rthj-case Thermal Resistance Junction-case Max 1.67 3.57 oC/W
Rthj-amb
Rthc-sink
Tl
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Unit
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tjmax, δ <1%) 2.8 A
EAS Single Pulse Avalanche Energy
(starting Tj=25o
C, ID=I
AR,V
DD =50V) 42 mJ
EAR Repetitive Avalanche Energy
(pulse width limited by Tjmax, δ <1%) 1.6 mJ
IAR Avalanche Current, Repetitive or Not-Repetitive
(Tc=100o
C, pulse width limited by Tjmax, δ <1%) 1.8 A
ELECTRICAL CHARACTERISTICS (Tcase =25oC unlessotherwise specified)
OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source
Breakdown Voltage ID= 250 µAV
GS = 0 500 V
IDSS Zero Gate Voltage
Drain Current (VGS =0) V
DS =MaxRating
V
DS =MaxRatingx0.8 T
c= 125 oC250
1000 µA
µA
IGSS Gate-Source Leakage
Current (VDS =0) V
GS =± 30 V 100 mA
ON (∗)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
VGS(th) Gate Threshold Voltage VDS =V
GS ID = 250 µA2.2533.75V
R
DS(on) Static Drain-source On
Resistance VGS =10V I
D=1.4A
V
GS =10V I
D=1.4A T
c= 100oC3.25 4
8Ω
Ω
ID(on) On State Drain Current VDS >I
D(on) xR
DS(on)max
VGS =10 V 2.8 A
DYNAMIC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
gfs (∗)Forward
Transconductance VDS >I
D(on) xR
DS(on)max ID=1.4A 0.8 2 S
C
iss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =25V f=1MHz V
GS = 0 300
55
15
400
70
20
pF
pF
pF
STP2NA50/FI
2/6
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol Parameter Test Conditions Min. Typ. Max. Unit
td(on)
trTurn-on Time
Rise Time VDD =250V I
D=1.4A
R
G=4.7 Ω VGS =10V 7
810
11 ns
ns
(di/dt)on Turn-on Current Slope VDD =400V I
D=2.8A
R
G=47 Ω VGS =10V 350 A/µs
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400V I
D=2.8 A VGS =10V 18
5.5
7
25 nC
nC
nC
SWITCHING OFF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
VDD =400V I
D=2.8A
R
G=4.7 Ω VGS =10V 7
7
14
10
10
20
ns
ns
ns
SOURCE DRAIN DIODE
Symbol Parameter Test Conditions Min. Typ. Max. Unit
ISD
ISDM(•)Source-drain Current
Source-drain Current
(pulsed)
2.8
11.2 A
A
VSD (∗)ForwardOnVoltage I
SD =2.8A V
GS =0 1.6 V
t
rr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD =2.8A di/dt=100A/µs
V
DD =100V T
j=150o
C380
4.4
23
ns
µC
A
(∗) Pulsed: Pulse duration =300 µs, duty cycle1.5 %
(•) Pulse widthlimited by safeoperating area
STP2NA50/FI
3/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
L6
A
C
D
E
D1
F
G
L7
L2
Dia.
F1
L5
L4
H2
L9
F2
G1
TO-220MECHANICAL DATA
P011C
STP2NA50/FI
4/6
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
L2
A
B
D
E
H
G
L6
¯
F
L3
G1
123
F2
F1
L7
L4
ISOWATT220MECHANICAL DATA
P011G
STP2NA50/FI
5/6
Information furnishedis believed to be accurateand reliable. However,SGS-THOMSON Microelectronics assumesno responsability for the
consequencesof use ofsuch informationnor forany infringement of patentsor otherrights of third parties whichmay resultsfrom its use. No
licenseis grantedby implicationor otherwise underany patent orpatentrights ofSGS-THOMSON Microelectronics. Specifications mentioned
in this publicationare subject to change without notice.This publication supersedes and replaces all information previously supplied.
SGS-THOMSONMicroelectronics productsare notauthorized for use ascriticalcomponents in lifesupportdevices or systems withoutexpress
writtenapproval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - HongKong - Italy- Japan - Korea - Malaysia- Malta- Morocco- TheNetherlands-
Singapore- Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom- U.S.A
...
STP2NA50/FI
6/6
