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LF155
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LF356, LF357
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LFx5x JFET Input Operational Amplifiers
1 Features 2 Applications
1• Advantages • Precision High-Speed Integrators
• Fast D/A and A/D Converters
– Replace Expensive Hybrid and Module FET
Op Amps • High Impedance Buffers
– Rugged JFETs Allow Blow-Out Free Handling • Wideband, Low Noise, Low Drift Amplifiers
Compared With MOSFET Input Devices • Logarithmic Amplifiers
– Excellent for Low Noise Applications Using • Photocell Amplifiers
Either High or Low Source Impedance—Very • Sample and Hold Circuits
Low 1/f Corner
– Offset Adjust Does Not Degrade Drift or 3 Description
Common-Mode Rejection as in Most The LFx5x devices are the first monolithic JFET input
Monolithic Amplifiers operational amplifiers to incorporate well-matched,
– New Output Stage Allows Use of Large high-voltage JFETs on the same chip with standard
bipolar transistors (BI-FET™ Technology). These
Capacitive Loads (5,000 pF) Without Stability amplifiers feature low input bias and offset
Problems currents/low offset voltage and offset voltage drift,
– Internal Compensation and Large Differential coupled with offset adjust, which does not degrade
Input Voltage Capability drift or common-mode rejection. The devices are also
• Common Features designed for high slew rate, wide bandwidth,
extremely fast settling time, low voltage and current
– Low Input Bias Current: 30 pA noise and a low 1/f noise corner.
– Low Input Offset Current: 3 pA
– High Input Impedance: 1012 ΩDevice Information(1)
– Low Input Noise Current: 0.01 pA/√Hz PART NUMBER PACKAGE BODY SIZE (NOM)
– High Common-Mode Rejection Ratio: 100 dB SOIC (8) 4.90 mm × 3.91 mm
LFx5x TO-CAN (8) 9.08 mm × 9.08 mm
– Large DC Voltage Gain: 106 dB PDIP (8) 9.81 mm × 6.35 mm
• Uncommon Features (1) For all available packages, see the orderable addendum at
– Extremely Fast Settling Time to 0.01%: the end of the data sheet.
– 4 μs for the LFx55 devices
– 1.5 μs for the LFx56 Simplified Schematic
– 1.5 μs for the LFx57 (AV= 5)
– Fast Slew Rate:
– 5 V/µs for the LFx55
– 12 V/µs for the LFx56
– 50 V/µs for the LFx57 (AV= 5)
– Wide Gain Bandwidth:
– 2.5 MHz for the LFx55 devices
– 5 MHz for the LFx56
– 20 MHz for the LFx57 (AV= 5)
– Low Input Noise Voltage:
– 20 nV/√Hz for the LFx55 3 pF in LF357 series
– 12 nV/√Hz for the LFx56
– 12 nV/√Hz for the LFx57 (AV= 5)
1
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
LF155
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Table of Contents
7.2 Functional Block Diagram....................................... 15
1 Features.................................................................. 17.3 Feature Description................................................. 16
2 Applications ........................................................... 17.4 Device Functional Modes........................................ 16
3 Description............................................................. 18 Application and Implementation ........................ 17
4 Revision History..................................................... 28.1 Application Information............................................ 17
5 Pin Configuration and Functions......................... 38.2 Typical Application.................................................. 18
6 Specifications......................................................... 48.3 System Examples ................................................... 20
6.1 Absolute Maximum Ratings ...................................... 49 Power Supply Recommendations...................... 33
6.2 ESD Ratings.............................................................. 410 Layout................................................................... 33
6.3 Recommended Operating Conditions....................... 410.1 Layout Guidelines ................................................. 33
6.4 Thermal Information.................................................. 510.2 Layout Example .................................................... 34
6.5 AC Electrical Characteristics, TA= TJ= 25°C, VS=
±15 V.......................................................................... 511 Device and Documentation Support................. 35
6.6 DC Electrical Characteristics, TA= TJ= 25°C, VS=11.1 Related Links ........................................................ 35
±15 V.......................................................................... 611.2 Community Resources.......................................... 35
6.7 DC Electrical Characteristics .................................... 611.3 Trademarks........................................................... 35
6.8 Power Dissipation Ratings........................................ 711.4 Electrostatic Discharge Caution............................ 35
6.9 Typical Characteristics.............................................. 811.5 Glossary................................................................ 35
7 Detailed Description............................................ 14 12 Mechanical, Packaging, and Orderable
7.1 Overview................................................................. 14 Information........................................................... 35
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Revision C (March 2013) to Revision D Page
• Added Pin Configuration and Functions section, ESD Ratings table, Thermal Information table, Feature Description
section, Device Functional Modes,Application and Implementation section, Power Supply Recommendations
section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable
Information section ................................................................................................................................................................ 1
• Removed THIGH parameter as it is redundant to TAmaximum ............................................................................................... 4
Changes from Revision B (March 2013) to Revision C Page
• Changed layout of National Data Sheet to TI format ........................................................................................................... 31
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5 Pin Configuration and Functions
LMC Package D or P Package
8-Pin TO-99 8-Pin SOIC or PDIP
Top View Top View
Available per JM38510/11401 or
JM38510/11402
Pin Functions
PIN I/O DESCRIPTION
NAME NO.
BALANCE 1, 5 I Balance for input offset voltage
+INPUT 3 I Noninverting input
–INPUT 2 I Inverting input
NC 8 — No connection
OUTPUT 6 O Output
V+ 7 — Positive power supply
V– 4 — Negative power supply
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6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted) (1)(2)(3)
MIN MAX UNIT
LF155x, LF256x, LF356B ±22
Supply voltage V
LF35x ±18
LF15x, LF25x, LF356B ±40
Differential input voltage V
LF35x ±30
LF15x, LF25x, LF356B ±20
Input voltage(4) V
LF35x ±16
Output short circuit duration Continuous —
LF15x 150
LMC package LF25x, LF356B, LF35x 115
TJMAX °C
P package LF25x, LF356B, LF35x 100
D package LF25x, LF356B, LF35x 100
TO-99 package Soldering (10 sec.) 300
Soldering PDIP package Soldering (10 sec.) 260
information °C
(lead temp.) Vapor phase (60 sec.) LF25x, LF356B, LF35x 215
SOIC package Infrared (15 sec.) LF25x, LF356B, LF35x 220
Storage temperature, Tstg −65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by TJMAX,θJA, and the
ambient temperature, TA. The maximum available power dissipation at any temperature is PD= (TJMAX −TA) / θJA or the 25°C PdMAX,
whichever is less.
(3) If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications.
(4) Unless otherwise specified the absolute maximum negative input voltage is equal to the negative power supply voltage.
6.2 ESD Ratings VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)(2) ±1000 V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) 100 pF discharged through 1.5-kΩresistor
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted) MIN NOM MAX UNIT
LF15x ±15 VS±20
LF25x ±15 VS±20
Supply voltage, VSV
LF356B ±15 VS±20
LF35x ±15
LF15x –55 TA125
LF25x –25 TA85
TA°C
LF356B 0 TA70
LF35x 0 TA70
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6.4 Thermal Information LF155, LF156, LF355, LF357 LF356
D
THERMAL METRIC(1) P (PDIP) LMC (TO-99) P (PDIP) UNIT
(SOIC)
8 PINS 8 PINS 8 PINS 8 PINS
Junction-to-ambient thermal resistance 130 195 — 55.2
RθJA Still Air — — 160 — °C/W
400 LF/Min Air Flow — — 65 —
RθJC(top) Junction-to-case (top) thermal resistance — — 23 44.5 °C/W
RθJB Junction-to-board thermal resistance — — — 32.4 °C/W
ψJT Junction-to-top characterization parameter — — — 21.7 °C/W
ψJB Junction-to-board characterization parameter — — — 32.3 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report, SPRA953.
6.5 AC Electrical Characteristics, TA= TJ= 25°C, VS= ±15 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LFx55 5
LF15x: AV= 1 LFx56, LF356B 7.5
SR Slew Rate V/μs
LFx56, LF356B 12
LF357: AV= 5 LFx57 50
LFx55 2.5
Gain Bandwidth
GBW LFx56, LF356B 5 MHz
Product LFx57 20
LFx55 4
Settling Time to
tsLFx56, LF356B 1.5 μs
0.01%(1) LFx57 1.5
LFx55 25
f = 100 Hz LFx56, LF356B 15 nV/√Hz
LFx57 15
Equivalent Input
enRS= 100 Ω
Noise Voltage LFx55 20
f = 1000 Hz LFx56, LF356B 12 nV/√Hz
LFx57 12
LFx55
f = 100 Hz LFx56, LF356B 0.01 pA/√Hz
LFx57
Equivalent Input
inCurrent Noise LFx55
f = 1000 Hz LFx56, LF356B 0.01 pA/√Hz
LFx57
LFx55
Input
CIN LFx56, LF356B 3 pF
Capacitance LFx57
(1) Settling time is defined here, for a unity gain inverter connection using 2-kΩresistors for the LF15x. It is the time required for the error
voltage (the voltage at the inverting input pin on the amplifier) to settle to within 0.01% of its final value from the time a 10-V step input is
applied to the inverter. For the LF357, AV=−5, the feedback resistor from output to input is 2 kΩand the output step is 10 V (See
Settling Time Test Circuit).
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6.6 DC Electrical Characteristics, TA= TJ= 25°C, VS= ±15 V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LF155 2 4
LF355 2 4
Supply current LFx56, LF356B 5 7 mA
LF356 5 10
LF357 5 10
6.7 DC Electrical Characteristics
See (1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LF15x, LF25x, LF356B 3 5
TA= 25°C LF35x 3 10
VOS Input offset voltage RS= 50 ΩLF15x 7 mV
Over LF25x, LF356B 6.5
temperature LF35x 13
Average TC of input
ΔVOS/ΔT RS= 50 ΩLF15x, LF25x, LF356B, LF35x 5 μV/°C
offset voltage
Change in average TC μV/°C
ΔTC/ΔVOS RS= 50 Ω(2) LF15x, LF25x, LF356B, LF35x 0.5
with VOS adjust per mV
LF15x, LF25x, LF356B 3 20
TJ= 25°C(1) (3) pA
LF35x 3 50
IOS Input offset current LF15x 20
TJ≤THIGH LF25x, LF356B 1 nA
LF35x 2
LF15x, LF25x, LF356B 30 100
TJ= 25°C(1) (3) pA
LF35x 30 200
IBInput bias current LF15x 50
TJ≤THIGH LF25x, LF356B 5 nA
LF35x 8
RIN Input resistance TJ= 25°C LF15x, LF25x, LF356B, LF35x Ω
1012
LF15x, LF25x, LF356B 50 200
TA= 25°C
VS= ±15 V, LF35x 25 200
AVOL Large signal voltage gain VO= ±10 V, V/mV
LF15x, LF25x, LF356B 25
Over
RL= 2 kΩtemperature LF35x 15
VS= ±15 V, RL= 10 kΩLF15x, LF25x, LF356B, LF35x ±12 ±13
VOOutput voltage swing V
VS= ±15 V, RL= 2 kΩLF15x, LF25x, LF356B, LF35x ±10 ±12
(1) Unless otherwise stated, these test conditions apply:
LF15x LF25x LF356B LF35x
Supply Voltage, VS±15 V ≤VS≤±20 V ±15 V ≤VS≤±20 V ±15 V ≤VS≤±20 V VS= ±15 V
TA−55°C ≤TA≤+125°C −25°C ≤TA≤+85°C 0°C ≤TA≤+70°C 0°C ≤TA≤+70°C
THIGH +125°C +85°C +70°C +70°C
and VOS, IBand IOS are measured at VCM = 0.
(2) The Temperature Coefficient of the adjusted input offset voltage changes only a small amount (0.5 μV/°C typically) for each mV of
adjustment from its original unadjusted value. Common-mode rejection and open-loop voltage gain are also unaffected by offset
adjustment.
(3) The input bias currents are junction leakage currents which approximately double for every 10°C increase in the junction temperature,
TJ. Due to limited production test time, the input bias currents measured are correlated to junction temperature. In normal operation the
junction temperature rises above the ambient temperature as a result of internal power dissipation, Pd. TJ= TA+θJA Pd where θJA is
the thermal resistance from junction to ambient. Use of a heat sink is recommended if input bias current is to be kept to a minimum.
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DC Electrical Characteristics (continued)
See (1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
LF15x, LF25x, LF356B 11 15.1
VCM, High LF35x 10 15.1
Input common-mode
VCM VS= ±15 V V
voltage range LF15x, LF25x, LF356B −12 –11
VCM, Low LF35x −12 –10
LF15x, LF25x, LF356B 85 100
Common-mode rejection
CMRR dB
ratio LF35x 80 100
LF15x, LF25x, LF356B 85 100
Supply voltage rejection
PSRR dB
ratio(4) LF35x 80 100
(4) Supply Voltage Rejection is measured for both supply magnitudes increasing or decreasing simultaneously, in accordance with common
practice.
6.8 Power Dissipation Ratings MIN MAX UNIT
LF15x 560
LMC Package (Still Air) LF25x, LF356B, LF35x 400
LF15x 1200
Power Dissipation at LMC Package mW
TA= 25°C (1) (2) (400 LF/Min Air Flow) LF25x, LF356B, LF35x 1000
P Package LF25x, LF356B, LF35x 670
D Package LF25x, LF356B, LF35x 380
(1) The maximum power dissipation for these devices must be derated at elevated temperatures and is dictated by TJMAX,θJA, and the
ambient temperature, TA. The maximum available power dissipation at any temperature is PD= (TJMAX −TA) / θJA or the 25°C PdMAX,
whichever is less.
(2) Maximum power dissipation is defined by the package characteristics. Operating the part near the maximum power dissipation may
cause the part to operate outside specified limits.
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6.9 Typical Characteristics
6.9.1 Typical DC Performance Characteristics
Curves are for LF155 and LF156 unless otherwise specified.
Figure 2. Input Bias Current
Figure 1. Input Bias Current
Figure 4. Voltage Swing
Figure 3. Input Bias Current
Figure 5. Supply Current Figure 6. Supply Current
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Typical DC Performance Characteristics (continued)
Curves are for LF155 and LF156 unless otherwise specified.
Figure 8. Positive Current Limit
Figure 7. Negative Current Limit
Figure 10. Negative Common-Mode Input Voltage Limit
Figure 9. Positive Common-Mode Input Voltage Limit
Figure 12. Output Voltage Swing
Figure 11. Open-Loop Voltage Gain
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6.9.2 Typical AC Performance Characteristics
Figure 14. Gain Bandwidth
Figure 13. Gain Bandwidth
Figure 16. Output Impedance
Figure 15. Normalized Slew Rate
Figure 18. LF155 Small Signal Pulse Response, AV= +1
Figure 17. Output Impedance
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Typical AC Performance Characteristics (continued)
Figure 20. LF155 Large Signal Pulse Response, AV= +1
Figure 19. LF156 Small Signal Pulse Response, AV= +1
Figure 21. LF156 Large Signal Puls Response, AV= +1 Figure 22. Inverter Settling Time
Figure 23. Inverter Settling Time Figure 24. Open-Loop Frequency Response
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Typical AC Performance Characteristics (continued)
Figure 25. Bode Plot Figure 26. Bode Plot
Figure 27. Bode Plot Figure 28. Common-Mode Rejection Ratio
Figure 29. Power Supply Rejection Ratio Figure 30. Power Supply Rejection Ratio
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Typical AC Performance Characteristics (continued)
Figure 32. Equivalent Input Noise Voltage
Figure 31. Undistorted Output Voltage Swing
Figure 33. Equivalent Input Noise Voltage (Expanded Scale)
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7 Detailed Description
7.1 Overview
These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs
on the same chip with standard bipolar transistors (BI-FET Technology). These amplifiers feature low input bias
and offset currents, as well as low offset voltage and offset voltage drift, coupled with offset adjust which does
not degrade drift or common-mode rejection. These devices can replace expensive hybrid and module FET
operational amplifiers. Designed for low voltage and current noise and a low 1/f noise corner, these devices are
excellent for low noise applications using either high or low source impedance.
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7.3 Feature Description
7.3.1 Large Differential Input Voltage
These are operational amplifiers with JFET input devices. These JFETs have large reverse breakdown voltages
from gate to source and drain eliminating the need for clamps across the inputs. Therefore large differential input
voltages can easily be accommodated without a large increase in input current. The maximum differential input
voltage is independent of the supply voltages. However, neither of the input voltages should be allowed to
exceed the negative supply as this will cause large currents to flow which can result in a destroyed unit.
7.3.2 Large Common-Mode Input Voltage
These amplifiers will operate with the common-mode input voltage equal to the positive supply. In fact, the
common-mode voltage can exceed the positive supply by approximately 100 mV independent of supply voltage
and over the full operating temperature range. The positive supply can therefore be used as a reference on an
input as, for example, in a supply current monitor and/or limiter.
7.4 Device Functional Modes
The LFx5x has a single functional mode and operates according to the conditions listed in the Recommended
Operating Conditions.
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8 Application and Implementation
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
8.1 Application Information
These are op amps with JFET input devices. These JFETs have large reverse breakdown voltages from gate to
source and drain eliminating the need for clamps across the inputs. Therefore large differential input voltages can
easily be accommodated without a large increase in input current. The maximum differential input voltage is
independent of the supply voltages. However, neither of the input voltages should be allowed to exceed the
negative supply as this will cause large currents to flow which can result in a destroyed unit.
Exceeding the negative common-mode limit on either input will force the output to a high state, potentially
causing a reversal of phase to the output. Exceeding the negative common-mode limit on both inputs will force
the amplifier output to a high state. In neither case does a latch occur since raising the input back within the
common-mode range again puts the input stage and thus the amplifier in a normal operating mode.
Exceeding the positive common-mode limit on a single input will not change the phase of the output however, if
both inputs exceed the limit, the output of the amplifier will be forced to a high state.
These amplifiers will operate with the common-mode input voltage equal to the positive supply. In fact, the
common-mode voltage can exceed the positive supply by approximately 100 mV independent of supply voltage
and over the full operating temperature range. The positive supply can therefore be used as a reference on an
input as, for example, in a supply current monitor and/or limiter.
Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in
polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through
the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed
unit.
All of the bias currents in these amplifiers are set by FET current sources. The drain currents for the amplifiers
are therefore essentially independent of supply voltage.
As with most amplifiers, care should be taken with lead dress, component placement and supply decoupling in
order to ensure stability. For example, resistors from the output to an input should be placed with the body close
to the input to minimize pick-up and maximize the frequency of the feedback pole by minimizing the capacitance
from the input to ground.
A feedback pole is created when the feedback around any amplifier is resistive. The parallel resistance and
capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole.
In many instances the frequency of this pole is much greater than the expected 3-dB frequency of the closed
loop gain and consequently there is negligible effect on stability margin. However, if the feedback pole is less
than approximately six times the expected 3-dB frequency a lead capacitor should be placed from the output to
the input of the op amp. The value of the added capacitor should be such that the RC time constant of this
capacitor and the resistance it parallels is greater than or equal to the original feedback pole time constant.
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8.2 Typical Application
Figure 35. Settling Time Test Circuit
8.2.1 Design Requirements
Settling time is tested with the LF35x connected as unity gain inverter and LF357 connected for AV=−5
8.2.2 Detailed Design Procedure
Connect the circuit components as shown in Figure 35. In particular, use FET to isolate the probe capacitance.
Apply a 10-V step function to the input.
Use an oscilloscope to probe the circuit as shown in Figure 35.
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Typical Application (continued)
8.2.3 Application Curves
Large Signal Inverter Output, VOUT (from Settling Time Circuit)
Figure 36. LF355 Figure 37. LF356
Figure 38. LF357
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8.3 System Examples
Figure 39. Low Drift Adjustable Voltage Reference
•ΔVOUT /ΔT = ±0.002%/°C
• All resistors and potentiometers should be wire-wound
• P1: drift adjust
• P2: VOUT adjust
• Use LF155 for
– Low IB
– Low drift
– Low supply current
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System Examples (continued)
Figure 40. Fast Logarithmic Converter
• Dynamic range: 100 μA≤Ii≤1 mA (5 decades), |VO| = 1 V/decade
• Transient response: 3 μs for ΔIi= 1 decade
• C1, C2, R2, R3: added dynamic compensation
• VOS adjust the LF156 to minimize quiescent error
• RT: Tel Labs type Q81 + 0.3%/°C
(1)
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System Examples (continued)
Figure 41. Precision Current Monitor
• VO= 5 R1/R2 (V/mA of IS)
• R1, R2, R3: 0.1% resistors
• Use LF155 for
– Common-mode range to supply range
– Low IB
– Low VOS
– Low Supply Current
22 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated
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,
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,
LF256, LF257
LF355
,
LF356, LF357
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System Examples (continued)
Figure 42. 8-Bit D/A Converter With Symmetrical Offset Binary Operation
• R1, R2 should be matched within ±0.05%
• Full-scale response time: 3 μs
Table 1. Bit Illustration of the 8-Bit D/A Converter
EOB1 B2 B3 B4 B5 B6 B7 B8 COMMENTS
+9.920 1 1 1 1 1 1 1 1 Positive Full-Scale
+0.040 1 0 0 0 0 0 0 0 (+) Zero-Scale
−0.040 0 1 1 1 1 1 1 1 (−) Zero-Scale
−9.920 0 0 0 0 0 0 0 0 Negative Full-Scale
Figure 43. Wide BW Low Noise, Low Drift Amplifier
(2)
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 23
LF156 LF256 LF356
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,
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,
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,
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Parasitic input capacitance C1 ≃(3 pF for LF155, LF156 and LF357 plus any additional layout capacitance)
interacts with feedback elements and creates undesirable high frequency pole. To compensate add C2 such that:
R2 C2 ≃R1 C1.
Figure 44. Boosting the LF156 With a Current Amplifier
• IOUT(MAX) ≃150 mA (will drive RL≥100 Ω)
(3)
• No additional phase shift added by the current amplifier
Figure 45. Decades VCO
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,
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,
LF256, LF257
LF355
,
LF356, LF357
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SNOSBH0D –MAY 2000–REVISED NOVEMBER 2015
R1, R4 matched. Linearity 0.1% over 2 decades.
(4)
Figure 46. Isolating Large Capacitive Loads
• Overshoot 6%
• ts10 μs
• When driving large CL, the VOUT slew rate determined by CLand IOUT(MAX):
(5)
Figure 47. Low Drift Peak Detector
• By adding D1 and Rf, VD1 = 0 during hold mode. Leakage of D2 provided by feedback path through Rf.
• Leakage of circuit is essentially Ib(LF155, LF156) plus capacitor leakage of Cp.
• Diode D3 clamps VOUT (A1) to VIN −VD3 to improve speed and to limit reverse bias of D2.
• Maximum input frequency should be << ½πRfCD2 where CD2 is the shunt capacitance of D2.
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 25
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LF155
,
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,
LF256, LF257
LF355
,
LF356, LF357
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SNOSBH0D –MAY 2000–REVISED NOVEMBER 2015
Figure 50. High Impedance, Low Drift Instrumentation Amplifier
• System VOS adjusted via A2 VOS adjust
• Trim R3 to boost up CMRR to 120 dB. Instrumentation amplifier resistor array recommended for best
accuracy and lowest drift
(8)
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 27
LF156 LF256 LF356
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,
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,
LF256, LF257
LF355
,
LF356, LF357
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www.ti.com
Figure 51. Fast Sample and Hold
• Both amplifiers (A1, A2) have feedback loops individually closed with stable responses (overshoot negligible)
• Acquisition time TA, estimated by:
(9)
• LF156 develops full Sroutput capability for VIN ≥1 V
• Addition of SW2 improves accuracy by putting the voltage drop across SW1 inside the feedback loop
• Overall accuracy of system determined by the accuracy of both amplifiers, A1 and A2
28 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated
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,
LF156
,
LF256, LF257
LF355
,
LF356, LF357
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SNOSBH0D –MAY 2000–REVISED NOVEMBER 2015
Figure 52. High Accuracy Sample and Hold
• By closing the loop through A2, the VOUT accuracy will be determined uniquely by A1.
– No VOS adjust required for A2.
• TAcan be estimated by same considerations as previously but, because of the added
– propagation delay in the feedback loop (A2) the overshoot is not negligible.
• Overall system slower than fast sample and hold
• R1, CC: additional compensation
• Use LF156 for
– Fast settling time
– Low VOS
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 29
LF156 LF256 LF356
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LF256, LF257
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,
LF356, LF357
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www.ti.com
Figure 53. High Q Band Pass Filter
• By adding positive feedback (R2)
• Q increases to 40
• fBP = 100 kHz
(10)
• Clean layout recommended
• Response to a 1-Vp-p tone burst: 300 μs
30 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated
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,
LF156
,
LF256, LF257
LF355
,
LF356, LF357
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SNOSBH0D –MAY 2000–REVISED NOVEMBER 2015
Figure 54. High Q Notch Filter
• 2R1 = R = 10 MΩ
– 2C = C1 = 300 pF
• Capacitors should be matched to obtain high Q
• fNOTCH = 120 Hz, notch = −55 dB, Q > 100
• Use LF155 for
– Low IB
– Low supply current
Figure 55. VOS Adjustment
• VOS is adjusted with a 25-k potentiometer
• The potentiometer wiper is connected to V+
• For potentiometers with temperature coefficient of 100 ppm/°C or less the additional drift with adjust
is ≈0.5 μV/°C/mV of adjustment
• Typical overall drift: 5 μV/°C ±(0.5 μV/°C/mV of adj.)
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 31
LF156 LF256 LF356
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,
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,
LF256, LF257
LF355
,
LF356, LF357
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Figure 56. Driving Capacitive Loads
•*LF15x R = 5k, LF357 R = 1.25 k
• Due to a unique output stage design, these amplifiers have the ability to drive large capacitive loads and still
maintain stability. CL(MAX) ≃0.01 μF.
• Overshoot ≤20%, Settling time (ts)≃5μs
Figure 57. LF357 - A Large Power BW Amplifier
For distortion ≤1% and a 20 Vp-p VOUT swing, power bandwidth is: 500 kHz.
32 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated
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,
LF156
,
LF256, LF257
LF355
,
LF356, LF357
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SNOSBH0D –MAY 2000–REVISED NOVEMBER 2015
9 Power Supply Recommendations
See the Recommended Operating Conditions for the minimum and maximum values for the supply input voltage
and operating junction temperature.
10 Layout
10.1 Layout Guidelines
10.1.1 Printed-Circuit-Board Layout For High-Impedance Work
It is generally recognized that any circuit which must operate with less than 1000 pA of leakage current requires
special layout of the PCB. When one wishes to take advantage of the low input bias current of the LFx5x,
typically less than 30 pA, it is essential to have an excellent layout. Fortunately, the techniques of obtaining low
leakages are quite simple. First, the user must not ignore the surface leakage of the PCB, even though it may
sometimes appear acceptably low, because under conditions of high humidity or dust or contamination, the
surface leakage will be appreciable.
To minimize the effect of any surface leakage, lay out a ring of foil completely surrounding the inputs of the
LFx5x and the terminals of capacitors, diodes, conductors, resistors, relay terminals, and so forth, connected to
the inputs of the op amp, as in Figure 62. To have a significant effect, guard rings must be placed on both the
top and bottom of the PCB. This PC foil must then be connected to a voltage that is at the same voltage as the
amplifier inputs, because no leakage current can flow between two points at the same potential. For example, a
PCB trace-to-pad resistance of 10 TΩ, which is normally considered a very large resistance, could leak 5 pA if
the trace were a 5-V bus adjacent to the pad of the input. If a guard ring is used and held close to the potential of
the amplifier inputs, it will significantly reduce this leakage current.
Figure 58. Inverting Amplifier
Figure 59. Noninverting Amplifier
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 33
LF156 LF256 LF356
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,
LF156
,
LF256, LF257
LF355
,
LF356, LF357
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www.ti.com
Layout Guidelines (continued)
Figure 60. Typical Connections Of Guard Rings
The designer should be aware that when it is inappropriate to lay out a PCB for the sake of just a few circuits,
there is another technique which is even better than a guard ring on a PCB: Do not insert the input pin of the
amplifier into the board at all, but bend it up in the air and use only air as an insulator. Air is an excellent
insulator. In this case you may have to forego some of the advantages of PCB construction, but the advantages
are sometimes well worth the effort of using point-to-point up-in-the-air wiring. See Figure 61.
(Input pins are lifted out of PCB and soldered directly to components. All other pins connected to PCB).
Figure 61. Air Wiring
Another potential source of leakage that might be overlooked is the device package. When the LFx5x is
manufactured, the device is always handled with conductive finger cots. This is to assure that salts and skin oils
do not cause leakage paths on the surface of the package. We recommend that these same precautions be
adhered to, during all phases of inspection, test and assembly.
10.2 Layout Example
Figure 62. Examples Of Guard
Ring In PCB Layout
34 Submit Documentation Feedback Copyright © 2000–2015, Texas Instruments Incorporated
LF156 LF256 LF356
LF155
,
LF156
,
LF256, LF257
LF355
,
LF356, LF357
www.ti.com
SNOSBH0D –MAY 2000–REVISED NOVEMBER 2015
11 Device and Documentation Support
11.1 Related Links
The table below lists quick access links. Categories include technical documents, support and community
resources, tools and software, and quick access to sample or buy.
Table 2. Related Links
TECHNICAL TOOLS & SUPPORT &
PARTS PRODUCT FOLDER SAMPLE & BUY DOCUMENTS SOFTWARE COMMUNITY
LF156 Click here Click here Click here Click here Click here
LF256 Click here Click here Click here Click here Click here
LF356 Click here Click here Click here Click here Click here
11.2 Community Resources
The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective
contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of
Use.
TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration
among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help
solve problems with fellow engineers.
Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and
contact information for technical support.
11.3 Trademarks
BI-FET, E2E are trademarks of Texas Instruments.
All other trademarks are the property of their respective owners.
11.4 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.5 Glossary
SLYZ022 —TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
12 Mechanical, Packaging, and Orderable Information
The following pages include mechanical, packaging, and orderable information. This information is the most
current data available for the designated devices. This data is subject to change without notice and revision of
this document. For browser-based versions of this data sheet, refer to the left-hand navigation.
Copyright © 2000–2015, Texas Instruments Incorporated Submit Documentation Feedback 35
LF156 LF256 LF356
PACKAGE OPTION ADDENDUM
www.ti.com 31-Mar-2021
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status
(1)
Package Type Package
Drawing Pins Package
Qty Eco Plan
(2)
Lead finish/
Ball material
(6)
MSL Peak Temp
(3)
Op Temp (°C) Device Marking
(4/5)
Samples
LF156 MD8 ACTIVE DIESALE Y 0 204 RoHS & Green Call TI Level-1-NA-UNLIM -55 to 125
LF156H ACTIVE TO-99 LMC 8 500 Non-RoHS &
Non-Green Call TI Call TI -55 to 125 ( LF156H, LF156H)
LF156H/NOPB ACTIVE TO-99 LMC 8 500 RoHS & Green Call TI Level-1-NA-UNLIM -55 to 125 ( LF156H, LF156H)
LF256H ACTIVE TO-99 LMC 8 500 Non-RoHS &
Non-Green Call TI Call TI -25 to 85 ( LF256H, LF256H)
LF256H/NOPB ACTIVE TO-99 LMC 8 500 RoHS & Green Call TI Level-1-NA-UNLIM -25 to 85 ( LF256H, LF256H)
LF356M NRND SOIC D 8 95 Non-RoHS
& Green Call TI Call TI 0 to 70 LF356
M
LF356M/NOPB ACTIVE SOIC D 8 95 RoHS & Green SN Level-1-260C-UNLIM 0 to 70 LF356
M
LF356MX/NOPB ACTIVE SOIC D 8 2500 RoHS & Green SN Level-1-260C-UNLIM 0 to 70 LF356
M
LF356N/NOPB ACTIVE PDIP P 8 40 RoHS & Green Call TI | SN Level-1-NA-UNLIM 0 to 70 LF
356N
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
PACKAGE OPTION ADDENDUM
www.ti.com 31-Mar-2021
Addendum-Page 2
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6) Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
LF356MX/NOPB SOIC D 8 2500 330.0 12.4 6.5 5.4 2.0 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 15-Sep-2018
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
LF356MX/NOPB SOIC D 8 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 15-Sep-2018
Pack Materials-Page 2
www.ti.com
PACKAGE OUTLINE
C
.228-.244 TYP
[5.80-6.19]
.069 MAX
[1.75]
6X .050
[1.27]
8X .012-.020
[0.31-0.51]
2X
.150
[3.81]
.005-.010 TYP
[0.13-0.25]
0 - 8 .004-.010
[0.11-0.25]
.010
[0.25]
.016-.050
[0.41-1.27]
4X (0 -15 )
A
.189-.197
[4.81-5.00]
NOTE 3
B .150-.157
[3.81-3.98]
NOTE 4
4X (0 -15 )
(.041)
[1.04]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES:
1. Linear dimensions are in inches [millimeters]. Dimensions in parenthesis are for reference only. Controlling dimensions are in inches.
Dimensioning and tolerancing per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed .006 [0.15] per side.
4. This dimension does not include interlead flash.
5. Reference JEDEC registration MS-012, variation AA.
18
.010 [0.25] C A B
5
4
PIN 1 ID AREA
SEATING PLANE
.004 [0.1] C
SEE DETAIL A
DETAIL A
TYPICAL
SCALE 2.800
www.ti.com
EXAMPLE BOARD LAYOUT
.0028 MAX
[0.07]
ALL AROUND
.0028 MIN
[0.07]
ALL AROUND
(.213)
[5.4]
6X (.050 )
[1.27]
8X (.061 )
[1.55]
8X (.024)
[0.6]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
6. Publication IPC-7351 may have alternate designs.
7. Solder mask tolerances between and around signal pads can vary based on board fabrication site.
METAL SOLDER MASK
OPENING
NON SOLDER MASK
DEFINED
SOLDER MASK DETAILS
EXPOSED
METAL
OPENING
SOLDER MASK METAL UNDER
SOLDER MASK
SOLDER MASK
DEFINED
EXPOSED
METAL
LAND PATTERN EXAMPLE
EXPOSED METAL SHOWN
SCALE:8X
SYMM
1
45
8
SEE
DETAILS
SYMM
www.ti.com
EXAMPLE STENCIL DESIGN
8X (.061 )
[1.55]
8X (.024)
[0.6]
6X (.050 )
[1.27] (.213)
[5.4]
(R.002 ) TYP
[0.05]
SOIC - 1.75 mm max heightD0008A
SMALL OUTLINE INTEGRATED CIRCUIT
4214825/C 02/2019
NOTES: (continued)
8. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
9. Board assembly site may have different recommendations for stencil design.
SOLDER PASTE EXAMPLE
BASED ON .005 INCH [0.125 MM] THICK STENCIL
SCALE:8X
SYMM
SYMM
1
45
8
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