050-7204 Rev A 1-2010
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specifi ed.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA)
Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7.5A)
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BVDSS
RDS(on)
IDSS
IGSS
VGS(th)
UNIT
Volts
Ohms
μA
nA
Volts
MIN TYP MAX
600
0.45
250
1000
±100
2 4
APT6045B_SVFR(G)
600
15
60
±30
±40
250
2.0
-55 to 150
300
15
30
960
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ment mode power MOSFETs. This new technology minimizes the JFET ef-
fect, increases packing density and reduces the on-resistance. Power MOS
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POWER MOS V® FREDFET
FAST RECOVERY BODY DIODE
BVFR
SVFR
APT6045BVFR APT6045SVFR
APT6045BVFRG APT6045SVFRG
600V 15A 0.45 Ω
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
TO-247
D3PAK
G
D
S
Microsemi Website - http://www.microsemi.com
050-7270 Rev A 1-2010
DYNAMIC CHARACTERISTICS APT6045B_SVFR(G)
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
1 (Body Diode)
Diode Forward Voltage 2 (VGS = 0V, IS = -15A)
Peak Diode Recovery dv/dt
5
Reverse Recovery Time
(IS = -15A, di/dt = 100A/μs)
Reverse Recovery Charge
(IS = -15A, di/dt = 100A/μs)
Peak Recovery Current
(IS = -15A, di/dt = 100A/μs)
Symbol
IS
ISM
VSD
dv/dt
trr
Qrr
IRRM
UNIT
Amps
Volts
V/ns
ns
μC
Amps
MIN TYP MAX
15
60
1.3
15
Tj = 25°C 250
Tj = 125°C 500
Tj = 25°C 1.9
Tj = 125°C 6
Tj = 25°C 15
Tj = 125°C 26
Symbol
RθJC
RθJA
MIN TYP MAX
0.50
40
UNIT
°C/W
Characteristic
Junction to Case
Junction to Ambient
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 8.50mH, RG = 25Ω, Peak IL = 15A
5 dv/dt numbers refl ect the limitations of the test circuit rather than the
device itself. IS ≤ -ID14A di/dt ≤ 700A/μs VR ≤ 600V TJ ≤ 150°C
Microsemi Reserves the right to change, without notice, the specifi cations and information contained herein.
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 10V
VDD = 300V
ID = 15A @ 25°C
VGS = 15V
VDD = 300V
ID = 15A @ 25°C
RG = 1.6Ω
MIN TYP MAX
2600 3120
305 425
125 180
115 170
15 25
52 75
10 20
9 18
38 50
6 12
UNIT
pF
nC
ns
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge 3
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
ZθJC, THERMAL IMPEDANCE (°C/W)
10-5 10-4 10-3 10-2 10-1 1.0 10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.5
0.1
0.05
0.01
0.005
0.001
0.1
SINGLE PULSE
0.02
0.05
0.2
D=0.5
0.01
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
050-7204 Rev A 1-2010
Typical Performance Curves APT6045B_SVFR(G)
ID = 7.5A
VGS = 10V
30
24
18
12
6
0
1.5
1.4
1.3
1.2
1.1
1.0
0.9
1.15
1.10
1.05
1.00
0.95
0.90
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30
24
18
12
6
0
30
24
18
12
6
0
16
12
8
4
0
2.5
2.0
1.5
1.0
0.5
0.0
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
4.5V
5V
VGS=6V, 7V, 10V & 15V
VGS=10V
VGS=20V
TJ = +125°C
TJ = +25°C TJ = -55°C
4V
4.5V
5V
5.5V
4V
6V
VGS=7V, 10V
VGS=15V
5.5V
NORMALIZED TO
VGS = 10V @ 7.5A
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
T
C, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
T
J, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
R
DS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
V
GS(TH), THRESHOLD VOLTAGE BVDSS, DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES)
(NORMALIZED) VOLTAGE (NORMALIZED)
0 50 100 150 200 250 0 5 10 15 20 25
0 2 4 6 8 0 6 12 18 24 30 36
25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
050-7204 Rev A 1-2010
APT6045B_SVFR(G)
1 5 10 50 100 600 .01 .1 1 10 50
0 50 100 150 200 250 0.2 0.4 0.6 0.8 1.0 1.2 1.4
TC =+25°C
TJ =+150°C
SINGLE PULSE
100
50
10
5
1
0.5
0.1
20
16
12
8
4
0
OPERATION HERE
LIMITED BY RDS (ON)
TJ =+150°C TJ =+25°C
Crss
Coss
Ciss
10,000
5,000
1,000
500
100
50
50
10
5
1
.5
.1
VDS=120V
VDS=480V
ID = 7.5A
10μS
1mS
10mS
100mS
DC
100μS
VDS=300V
V
DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
Q
g, TOTAL GATE CHARGE (nC) VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
GS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
I
DR, REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
e3 100% Sn Plated
D3PAK Package Outline
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
6.15 (.242) BSC
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
3.50 (.138)
3.81 (.150)
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Gate
5.45 (.215) BSC
Dimensions in Millimeters and (Inches)
2-Plcs.
15.95 (.628)
16.05(.632)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
2.67 (.105)
2.84 (.112)
0.46 (.018)
{3 Plcs}
0.56 (.022)
Dimensions in Millimeters (Inches)
and Leads
are Plated
3.81 (.150)
4.06 (.160)
(Base of Lead)
(Heat Sink)
1.98 (.078)
2.08 (.082)
Gate
0.020 (.001)
0.178 (.007)
1.27 (.050)
1.40 (.055)
11.51 (.453)
11.61 (.457)
13.41 (.528)
13.51(.532)
Revised
8/29/97
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
Revised
4/18/95
Drain
Source
Drain
Drain
Heat Sink (Collector)
Drain
Source
