APT6045BVFR APT6045SVFR APT6045BVFRG APT6045SVFRG 600V 15A 0.45 *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS V(R) FREDFET BVFR TO -2 47 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Faster Switching D3PAK SVFR * Avalanche Energy Rated D * Lower Leakage * FAST RECOVERY BODY DIODE G * TO-247 or Surface Mount D PAK Package 3 S All Ratings: TC = 25C unless otherwise specified. MAXIMUM RATINGS Symbol VDSS ID Parameter APT6045B_SVFR(G) UNIT 600 Volts Drain-Source Voltage 15 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 250 Watts Linear Derating Factor 2.0 W/C VGSM PD TJ,TSTG 60 Operating and Storage Junction Temperature Range TL Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR Repetitive Avalanche Energy EAS 1 -55 to 150 C 300 Amps 15 (Repetitive and Non-Repetitive) 1 Single Pulse Avalanche Energy Volts 30 4 mJ 960 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 600 RDS(on) Drain-Source On-State Resistance IDSS IGSS VGS(th) 2 TYP MAX Volts 0.45 (VGS = 10V, ID = 7.5A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) UNIT 250 Ohms A Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-7204 Rev A 1-2010 Symbol APT6045B_SVFR(G) DYNAMIC CHARACTERISTICS Symbol Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf MIN MAX 2600 3120 VDS = 25V f = 1 MHz 305 425 125 180 VGS = 0V 3 Total Gate Charge Qgs TYP Test Conditions Fall Time VGS = 10V 115 170 VDD = 300V 15 25 ID = 15A @ 25C 52 75 VGS = 15V 10 20 VDD = 300V 9 18 ID = 15A @ 25C 38 50 RG = 1.6 6 12 TYP MAX UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol MIN Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 V Diode Forward Voltage 2 SD dv /dt (VGS = 0V, IS = -15A) 5 Reverse Recovery Time (IS = -15A, di/dt = 100A/s) Reverse Recovery Charge Q rr (IS = -15A, di/dt = 100A/s) Peak Recovery Current IRRM 60 (Body Diode) Peak Diode Recovery dv/dt t rr 15 di (IS = -15A, /dt = 100A/s) Volts 15 V/ns 250 Tj = 125C 500 1.9 Tj = 125C 6 Tj = 25C 15 Tj = 125C 26 Amps 1.3 Tj = 25C Tj = 25C UNIT ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.50 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature 2 Pulse Test: Pulse width < 380 s, Duty Cycle < 2% 3 See MIL-STD-750 Method 3471 0.5 0.2 0.1 0.05 0.02 0.01 0.005 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-7270 Rev A 1-2010 D=0.5 0.05 SINGLE PULSE t1 t2 t 0.001 10-5 Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC 10-4 10-3 C/W 4 Starting Tj = +25C, L = 8.50mH, RG = 25, Peak IL = 15A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS -ID14A di/dt 700A/s VR 600V TJ 150C Microsemi Reserves the right to change, without notice, the specifications and information contained herein. 0.1 UNIT 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Typical Performance Curves APT6045B_SVFR(G) 30 VGS=6V, 7V, 10V & 15V 24 5.5V 18 12 5V 6 4.5V ID, DRAIN CURRENT (AMPERES) 4V 0 18 12 TJ = +125C 6 TJ = +25C TJ = -55C 0 0 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 12 8 4 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 18 5V 12 6 4.5V 4V 1.5 NORMALIZED TO V GS 1.4 = 10V @ 7.5A 1.3 1.2 VGS=10V 1.1 VGS=20V 1.0 0.9 0 6 12 18 24 30 36 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 7.5A D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 5.5V 1.1 1.0 0.9 0.8 1-2010 ID, DRAIN CURRENT (AMPERES) 16 VGS=7V, 10V 24 0 5 10 15 20 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE ID, DRAIN CURRENT (AMPERES) VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 24 6V 0 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 30 VGS=15V 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-7204 Rev A ID, DRAIN CURRENT (AMPERES) 30 APT6045B_SVFR(G) 10,000 10S 50 OPERATION HERE LIMITED BY R (ON) DS 5,000 100S 10 Ciss C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 100 1mS 5 10mS 1 100mS TC =+25C TJ =+150C SINGLE PULSE 0.5 50 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 20 IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Crss 100 1 5 10 50 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA I = 7.5A D VDS=120V VDS=300V 12 VDS=480V 8 4 0 Coss 500 DC 0.1 16 1,000 0 50 100 150 200 250 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 50 TJ =+150C 10 TJ =+25C 5 1 .5 .1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE D3PAK Package Outline TO-247 (B) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) Drain 6.15 (.242) BSC 5.38 (.212) 6.20 (.244) Drain 15.49 (.610) 16.26 (.640) (Heat Sink) e3 100% Sn Plated 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) Revised 4/18/95 20.80 (.819) 21.46 (.845) 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) 13.41 (.528) 13.51(.532) Revised 8/29/97 11.51 (.453) 11.61 (.457) 3.50 (.138) 3.81 (.150) 0.46 (.018) 0.56 (.022) {3 Plcs} 4.50 (.177) Max. 050-7204 Rev A 1-2010 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) Gate Drain 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.27 (.050) 1.40 (.055) 1.22 (.048) 1.32 (.052) 1.98 (.078) 2.08 (.082) 3.81 (.150) 4.06 (.160) (Base of Lead) Heat Sink (Collector) 5.45 (.215) BSC {2 Plcs.} and Leads are Plated Source 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Source Drain Gate Dimensions in Millimeters (Inches) Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.