APT1201R6BVFR APT1201R6SVFR 1200V POWER MOS V(R) FREDFET 8A 1.600 BVFR TO-247 Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. D3PAK SVFR * Faster Switching * Avalanche Energy Rated * Lower Leakage * FAST RECOVERY BODY DIODE D G * TO-247 or Surface Mount D3PAK Package S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter APT1201R6BVFR_SVFR UNIT 1200 Volts Drain-Source Voltage 8 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 280 Watts Linear Derating Factor 2.24 W/C VGSM PD TJ,TSTG 32 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 8 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 30 4 mJ 1210 STATIC ELECTRICAL CHARACTERISTICS ID(on) RDS(on) IDSS IGSS VGS(th) MIN Drain-Source Breakdown Voltage (VGS = 0V, ID = 250A) 1200 Volts 8 Amps On State Drain Current 2 (VDS > ID(on) x R DS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 4A) TYP MAX 1.600 Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V) 250 UNIT Ohms A Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125C) 1000 Gate-Source Leakage Current (VGS = 30V, VDS = 0V) 100 nA 4 Volts Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com 6-2004 BVDSS Characteristic / Test Conditions 050-5849 Rev A Symbol DYNAMIC CHARACTERISTICS Symbol APT1201R6BVFR_SVFR Test Conditions Characteristic Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain ("Miller ") Charge t d(on) TYP MAX VGS = 0V 3050 3660 VDS = 25V 255 360 f = 1 MHz 125 190 VGS = 10V 155 230 VDD = 0.5 VDSS ID = ID [Cont.] @ 25C 15 78 23 115 3 VGS = 15V 12 24 VDD = 0.5 VDSS 10 20 ID = ID [Cont.] @ 25C 50 75 RG = 1.6 15 30 TYP MAX Turn-on Delay Time tr Rise Time t d(off) Turn-off Delay Time tf MIN Fall Time UNIT pF nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 8 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ dt Peak Diode Recovery 32 (Body Diode) (VGS = 0V, IS = -ID [Cont.]) dv/ 5 dt UNIT Amps 1.3 Volts 18 V/ns t rr Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 220 Tj = 125C 450 Q rr Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 1.0 Tj = 125C 3.0 IRRM Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/s) Tj = 25C 10 Tj = 125C 14 ns C Amps THERMAL CHARACTERISTICS Symbol Characteristic MIN TYP MAX 0.45 RJC Junction to Case RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction UNIT C/W 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 37.81mH, R = 25, Peak I = 8A temperature. j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself. IS ID-8A di/dt 700A/s VR 1200V TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. D=0.5 0.1 0.05 0.2 0.1 0.05 0.01 0.005 0.02 Note: 0.01 PDM Z JC, THERMAL IMPEDANCE (C/W) 050-5849 Rev A 6-2004 0.5 SINGLE PULSE t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION APT1201R6BVFR_SVFR 10 VGS=5.5V, 6V, 7V, 10V &15V 8 6 4.5V 4 2 4V ID, DRAIN CURRENT (AMPERES) 8 6 TJ = +125C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 4 TJ = +125C 2 TJ = +25C TJ = -55C 0 0 1 2 3 4 5 6 7 8 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS BVDSS, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) 8 6 4 2 0 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 25 4 2 4V 1.3 V GS NORMALIZED TO = 10V @ 0.5 I [Cont.] D 1.2 VGS=10V 1.1 VGS=20V 1.0 0.9 0 4 8 12 16 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE -50 1.2 2.5 I = 0.5 I [Cont.] D D V GS = 10V 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 4.5V 1.1 1.0 0.9 0.8 6-2004 ID, DRAIN CURRENT (AMPERES) TJ = +25C 6 0 3 6 9 12 15 18 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 0 100 200 300 400 500 600 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS TJ = -55C 8 0 0 10 VGS=5.5V, 6V, 7V, 10V &15V 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5849 Rev A ID, DRAIN CURRENT (AMPERES) 10 APT1201R6BVFR_SVFR OPERATION HERE LIMITED BY RDS (ON) 10 5 10S 15,000 10,000 100S 5,000 C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 50 1mS 10mS 1 0.5 TC =+25C TJ =+150C SINGLE PULSE DC IDR, REVERSE DRAIN CURRENT (AMPERES) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE D VDS=120V VDS=240V 12 VDS=600V 8 4 0 0 50 100 150 200 250 300 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE Drain 6-2004 1 .5 .1 3 Drain (Heat Sink) 5.38 (.212) 6.20 (.244) 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Gate Drain Source 15.95 (.628) 16.05 (.632) 1.04 (.041) 1.15 (.045) 13.41 (.528) 13.51 (.532) 11.51 (.453) 11.61 (.457) 13.79 (.543) 13.99 (.551) 3.50 (.138) 3.81 (.150) 0.40 (.016) 0.79 (.031) 19.81 (.780) 20.32 (.800) TJ =+25C 5 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 050-5849 Rev A TJ =+150C 10 D PAK Package Outline (SVFR) 15.49 (.610) 16.26 (.640) 6.15 (.242) BSC 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE TO-247 Package Outline (BVFR) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) Crss 50 I = I [Cont.] 16 Coss 500 100 1 5 10 50 100 500 1200 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA D 1,000 100mS 0.1 20 Ciss 0.46 (.018) 0.56 (.022) 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.22 (.048) 1.32 (.052) 1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.} 2.40 (.094) 2.70 (.106) (Base of Lead) Heat Sink (Drain) and Leads are Plated Source Drain Gate Dimensions in Millimeters (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.