MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM Refer to the page 6 as to the product guaranteed maximum junction temperature 150C MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR12PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME 3.20.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 IT (RMS) ...................................................................... 12A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # ............................................ 20mA Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 123 0.5 2.6 Measurement point of case temperature 4.5 * * * * * 2.54 2 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Switching mode power supply, light dimmer, electric flasher unit, hair driver, control of household equipment such as TV sets * stereo * refrigerator * washing machine * infrared kotatsu * carpet, solenoid drivers, small motor control, copying machine, electric tool MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage 1 600 V VDSM Non-repetitive peak off-state voltage 1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360 conduction, Tc=74C ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg Storage temperature -- Viso for fusing Weight Typical value Isolation voltage Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 12 A 120 A 60 A2s 5 W 0.5 W A -40 ~ +125 C -40 ~ +125 C 2.0 g 2000 V 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150C INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=125C, VDRM applied -- -- 2.0 mA VTM On-state voltage Tc=25C, ITM=20A, Instantaneous measurement -- -- 1.6 V -- -- 1.5 V -- -- 1.5 V ! VFGT ! VRGT ! Gate trigger voltage 2 @ Tj=25C, VD=6V, RL=6, RG=330 VRGT # # -- -- 1.5 V IFGT ! ! -- -- 20 mA -- -- 20 mA -- -- 20 mA IRGT ! Gate trigger current 2 @ Tj=25C, VD=6V, RL=6, RG=330 # IRGT # VGD Gate non-trigger voltage Tj=125C, VD=1/2VDRM 0.2 -- -- V Rth (j-c) Thermal resistance Junction to case 3 -- -- 3.5 C/ W (dv/dt)c Critical-rate of rise of off-state commutating voltage Tj=125C 10 -- -- V/s 4 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in he table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125C 2. Rate of decay of on-state commutating current (di/dt)c=-6.0A/ms MAIN CURRENT TIME (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD=400V TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT MAXIMUM ON-STATE CHARACTERISTICS 200 7 5 3 2 101 7 5 3 2 Tj = 125C Tj = 25C 100 7 5 3 2 10-1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) 102 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150C INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 102 7 5 3 2 VGM = 10V 101 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE PGM = 5W PG(AV) = 0.5W IGM = 2A VGT = 1.5V 100 7 5 3 2 VGD = 0.2V IRGT I IFGT I, IRGT III 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) GATE VOLTAGE (V) GATE CHARACTERISTICS (, AND ) 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT I, IRGT III 102 7 5 4 3 2 IFGT I 101 -60 -40 -20 0 20 40 60 80 100 120 140 GATE CURRENT (mA) JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 TRANSIENT THERMAL IMPEDANCE (C/W) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (C) 103 7 5 3 2 NO FINS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 16 14 12 360 CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150C INSULATED TYPE, PLANAR PASSIVATION TYPE CASE TEMPERATURE (C) 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 2 4 6 0 8 10 12 14 AMBIENT TEMPERATURE (C) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 16 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 NO FINS RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 2 4 6 0 40 20 HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 100 (%) 0 103 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 12 14 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (C) HOLDING CURRENT VS. JUNCTION TEMPERATURE LACHING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 JUNCTION TEMPERATURE (C) 16 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) 60 LACHING CURRENT (mA) AMBIENT TEMPERATURE (C) 80 10 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE LOADS 100 8 103 7 5 3 2 T2+, G- TYPICAL EXAMPLE DISTRIBUTION 102 7 5 3 2 101 7 5 3 2 T2+, G+ TYPICAL T2- , G- EXAMPLE 100 -40 0 40 80 120 160 JUNCTION TEMPERATURE (C) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM MEDIUM POWER USE Refer to the page 6 as to the product guaranteed maximum junction temperature 150C INSULATED TYPE, PLANAR PASSIVATION TYPE 100 (%) 160 TYPICAL EXAMPLE 140 BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 TYPICAL EXAMPLE Tj = 125C 120 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 140 120 100 III QUADRANT 80 60 40 20 I QUADRANT 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) COMMUTATION CHARACTERISTICS GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 7 TYPICAL 5 EXAMPLE 3 Tj = 125C 2 IT = 4A = 500s VD = 200V 1 10 f = 3Hz 7 5 MINIMUM 3 CHARAC2 TERISTICS VALUE 100 7 100 SUPPLY VOLTAGE 100 (%) JUNCTION TEMPERATURE (C) TIME (di/dt)c TIME MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME VD GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE I QUADRANT III QUADRANT 2 3 5 7 101 5 7 102 2 3 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (s) GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6 A 6V A 6V RG V TEST PROCEDURE 1 V RG TEST PROCEDURE 2 6 A 6V V RG TEST PROCEDURE 3 Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM The product guaranteed maximum junction temperature 150C (See warning.) MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE OUTLINE DRAWING BCR12PM Dimensions in mm 10.5 MAX 2.8 8.5 17 5.0 1.2 5.2 TYPE NAME 3.20.2 VOLTAGE CLASS 13.5 MIN 3.6 1.3 MAX 0.8 2.54 IT (RMS) ...................................................................... 12A VDRM ....................................................................... 600V IFGT !, IRGT !, IRGT # ............................................ 20mA Viso ........................................................................ 2000V UL Recognized: Yellow Card No.E80276(N) File No. E80271 123 0.5 2.6 Measurement point of case temperature 4.5 * * * * * 2.54 2 1 1 T1 TERMINAL 2 T2 TERMINAL 3 3 GATE TERMINAL TO-220F APPLICATION Switching mode power supply, light dimmer, electric flasher unit, hair driver, control of household equipment such as TV sets * stereo * refrigerator * washing machine * infrared kotatsu * carpet, solenoid drivers, small motor control, copying machine, electric tool (Warning) 1. Refer to the recommended circuit values around the triac before using. 2. Be sure to exchange the specification before using. If not exchanged, general triacs will be supplied. MAXIMUM RATINGS Symbol Voltage class Parameter Unit 12 VDRM Repetitive peak off-state voltage 1 600 V VDSM Non-repetitive peak off-state voltage 1 720 V Symbol Parameter Conditions Ratings Unit IT (RMS) RMS on-state current Commercial frequency, sine full wave 360 conduction, Tc=99C ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive I2t I2t Value corresponding to 1 cycle of half wave 60Hz, surge on-state current PGM Peak gate power dissipation PG (AV) Average gate power dissipation VGM Peak gate voltage 10 V IGM Peak gate current 2 Tj Junction temperature Tstg Storage temperature -- Viso for fusing Weight Typical value Isolation voltage Ta=25C, AC 1 minute, T1 * T2 * G terminal to case 12 A 120 A 60 A2s 5 W 0.5 W A -40 ~ +150 C -40 ~ +150 C 2.0 g 2000 V 1. Gate open. Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM MEDIUM POWER USE The product guaranteed maximum junction temperature 150C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Limits Symbol Parameter Test conditions Min. Typ. Max. Unit IDRM Repetitive peak off-state current Tj=150C, VDRM applied -- -- 2.0 mA VTM On-state voltage Tc=25C, ITM=20A, Instantaneous measurement -- -- 1.6 V -- -- 1.5 V -- -- 1.5 V ! VFGT ! VRGT ! Gate trigger voltage 2 @ Tj=25C, VD=6V, RL=6, RG=330 VRGT # # -- -- 1.5 V IFGT ! ! -- -- 20 mA -- -- 20 mA -- -- 20 mA 0.2/0.1 -- -- V -- -- 3.5 C/ W 10/1 -- -- V/s IRGT ! Gate trigger current 2 @ Tj=25C, VD=6V, RL=6, RG=330 # IRGT # VGD Gate non-trigger voltage Tj=125C/150C, VD=1/2VDRM Rth (j-c) Thermal resistance Junction to case 3 (dv/dt)c Critical-rate of rise of off-state commutating voltage 4 Tj=125C/150C 2. Measurement using the gate trigger characteristics measurement circuit. 3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W. 4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. Commutating voltage and current waveforms (inductive load) Test conditions SUPPLY VOLTAGE 1. Junction temperature Tj=125C/150C 2. Rate of decay of on-state commutating current (di/dt)c=-6.0A/ms MAIN CURRENT TIME (di/dt)c TIME MAIN VOLTAGE 3. Peak off-state voltage VD=400V TIME (dv/dt)c VD PERFORMANCE CURVES RATED SURGE ON-STATE CURRENT 200 3 2 SURGE ON-STATE CURRENT (A) ON-STATE CURRENT (A) MAXIMUM ON-STATE CHARACTERISTICS 102 7 5 Tj = 150C 101 7 5 3 2 100 7 5 0.5 Tj = 25C 1.0 1.5 2 2.5 3.0 3.5 ON-STATE VOLTAGE (V) 4.0 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM MEDIUM POWER USE The product guaranteed maximum junction temperature 150C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE GATE CHARACTERISTICS (, AND ) 100 (%) PGM = 5W PG(AV) = 0.5W IGM = 2A VGT = 1.5V 100 7 5 3 2 10-1 IRGT I IFGT I, IRGT III VGD = 0.1V 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE TRIGGER CURRENT (Tj = tC) GATE TRIGGER CURRENT (Tj = 25C) GATE VOLTAGE (V) 5 3 2 VGM = 10V 101 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 103 7 5 4 3 2 TYPICAL EXAMPLE IRGT I, IRGT III 102 7 5 4 3 2 IFGT I 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 GATE CURRENT (mA) JUNCTION TEMPERATURE (C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 103 7 5 4 3 2 TYPICAL EXAMPLE 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 TRANSIENT THERMAL IMPEDANCE (C/W) GATE TRIGGER VOLTAGE (Tj = tC) GATE TRIGGER VOLTAGE (Tj = 25C) 100 (%) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 102 2 3 5 7 103 2 3 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz) JUNCTION TEMPERATURE (C) 103 7 5 3 2 NO FINS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10-1 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM ON-STATE POWER DISSIPATION ON-STATE POWER DISSIPATION (W) TRANSIENT THERMAL IMPEDANCE (C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO AMBIENT) 16 14 12 360 CONDUCTION 10 RESISTIVE, INDUCTIVE 8 LOADS 6 4 2 0 0 2 4 6 8 10 12 14 16 RMS ON-STATE CURRENT (A) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM MEDIUM POWER USE The product guaranteed maximum junction temperature 150C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE CASE TEMPERATURE (C) 160 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 140 120 100 80 60 360 40 CONDUCTION RESISTIVE, 20 INDUCTIVE LOADS 0 2 6 0 4 8 10 12 14 AMBIENT TEMPERATURE (C) ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 16 ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED 140 CURVES APPLY REGARDLESS OF CONDUCTION ANGLE 120 120 120 t2.3 100 100 100 t2.3 80 60 60 t2.3 60 NO FINS RESISTIVE, 40 INDUCTIVE LOADS 20 NATURAL CONVECTION 0 2 6 0 4 40 20 HOLDING CURRENT (Tj = tC) HOLDING CURRENT (Tj = 25C) 100 (%) 0 103 7 5 4 3 2 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 12 14 105 7 TYPICAL EXAMPLE 5 3 2 104 7 5 3 2 103 7 5 3 2 102 -60 -40 -20 0 20 40 60 80 100 120 140 160 RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (C) HOLDING CURRENT VS. JUNCTION TEMPERATURE LACHING CURRENT VS. JUNCTION TEMPERATURE TYPICAL EXAMPLE 102 7 5 4 3 2 101 -60 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C) 16 REPETITIVE PEAK OFF-STATE CURRENT VS. JUNCTION TEMPERATURE 100 (%) REPETITIVE PEAK OFF-STATE CURRENT (Tj = tC) REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25C) 60 LACHING CURRENT (mA) AMBIENT TEMPERATURE (C) 80 10 RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A) ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT 160 NATURAL CONVECTION NO FINS, CURVES 140 APPLY REGARDLESS OF CONDUCTION ANGLE 120 RESISTIVE, INDUCTIVE 100 LOADS 8 103 7 5 3 2 T2+, G- TYPICAL EXAMPLE DISTRIBUTION 102 7 5 3 2 101 7 5 3 2 T2+, G+ TYPICAL T2- , G- EXAMPLE 100 -40 0 40 80 120 160 JUNCTION TEMPERATURE (C) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM MEDIUM POWER USE The product guaranteed maximum junction temperature 150C (See warning.) 160 TYPICAL EXAMPLE 140 100 80 60 40 20 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 160 TYPICAL EXAMPLE Tj = 125C 120 100 III QUADRANT 80 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 150C) COMMUTATION CHARACTERISTICS (Tj = 125C) 160 TYPICAL EXAMPLE Tj = 150C 120 100 80 III QUADRANT 60 40 I QUADRANT 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) JUNCTION TEMPERATURE (C) 102 TYPICAL 7 EXAMPLE 5 Tj = 125C 3 IT = 4A 2 = 500s VD = 200V 101 f = 3Hz 7 5 SUPPLY VOLTAGE MAIN VOLTAGE (dv/dt)c MINIMUM CHARACTERISTICS VALUE 3 2 100 7 100 TIME MAIN CURRENT (di/dt)c TIME TIME VD I QUADRANT III QUADRANT 2 3 5 7 101 2 3 5 7 102 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) COMMUTATION CHARACTERISTICS (Tj = 150C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 102 7 TYPICAL 5 EXAMPLE Tj = 150C 3 IT = 4A 2 = 500s VD = 200V 101 f = 3Hz SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c TIME (di/dt)c TIME TIME VD 7 5 I QUADRANT 3 MINIMUM III QUADRANT 2 CHARACTERISTICS 100 VALUE 7 100 2 3 5 7 101 2 3 5 7 102 RATE OF DECAY OF ON-STATE COMMUTATING CURRENT (A /ms) 100 (%) BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) BREAKOVER VOLTAGE (dv/dt = xV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s ) 120 140 CRITICAL RATE OF RISE OF OFF-STATE COMMUTATING VOLTAGE (V/s) BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE (Tj = 125C) 140 GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) 100 (%) BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 100 (%) INSULATED TYPE, PLANAR PASSIVATION TYPE 103 7 5 4 3 2 TYPICAL EXAMPLE IFGT I IRGT I IRGT III 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT PULSE WIDTH (s) Mar. 2002 MITSUBISHI SEMICONDUCTOR TRIAC BCR12PM MEDIUM POWER USE The product guaranteed maximum junction temperature 150C (See warning.) INSULATED TYPE, PLANAR PASSIVATION TYPE GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 RECOMMENDED CIRCUIT VALUES AROUND THE TRIAC 6 LOAD A 6V RG V TEST PROCEDURE 1 C1 A 6V V RG TEST PROCEDURE 2 R1 C1 = 0.1~0.47F R1 = 47~100 C0 R0 C0 = 0.1F R0 = 100 6 A 6V V RG TEST PROCEDURE 3 Mar. 2002