FS6M12653RTC-TU - Fairchild Semiconductor

www.fairchildsemi.com

Rev.1.0.2

Features

• Fixed Frequency

• Internal Burst Mode Controller for Stand-by Mode

• Pulse By Pulse Over Current Limiting

• Over Current Protection(Auto Restart Mode)

• Over Voltage Protection (Auto Restart Mode)

• Over Load Protection(Auto Restart Mode)

• Internal Thermal Shutdown Function(Latch Mode)

• Unde r Voltage Lo ck ou t

• Internal High Voltage Sense FET

•Soft Start

Description

The Fairchild Power Switch(FPS) product family is specially

designed for an off line SMPS with minimal external

components. The Fairchild Power Switch(FPS) consist of

high voltage power SenseFET and current mode PWM IC.

Included PWM controller features integrated fixed oscillator,

under voltage lock out, leading edge blanking, optimized gate

turn-on/turn-off driver, thermal shut down protection, over

voltage protection, and temperature compensated precision

current sources for loop compensation and fault protection

circuitry. compared to discrete MOSFET and controller or

RCC switching converter solution, a Fairchild Power

Switch(FPS) can reduce total component count, design size,

and weight and at the same time increase efficiency,

productivity, and system reliability. It has a basic platform

well suited for cost effective LCD monitor power supply.

TO-220F-5L

1. Drain 2. GND 3. VCC

4. Feedback 5. S oftSt art

Internal Block Diagram

QTSD

(Tj=160℃)

Ifb

Vref

Rsenese

2.5R

Vref

Internal

Bias Vref

UVLO

Ron

Roff

PWM

OCL

Burst mode

controller

Filter

(130nsec)

Power-on

Reset

(Vcc=6.5V)

UVLO Reset

(Vcc=9V)

OLP

OVP

Vth=7.5V

Vcc

Vth=33V

Vth=2V

Vfb Offset

Idelay

Vcc

Vfb

Vth=1V

Vcc

Vth=11V/12V

OSC

Vref

Drain

VCC

GND

SoftStart

Feedbock

FS6M12653RTC

Fairchil d Power Switch(FPS)

FS6M12653RTC

Absolute Maximum Ratings

(Ta=25°C, unless otherwise specified)

Notes:

1. Repetitive rating: Pulse width limited by maximum junction temperature

2. L=81mH, starting Tj=25°C

3. L=13uH, starting Tj=25 °C

Characteristic Symbol Value Unit

Maximum Drain Voltage VD, MAX 650 V

Drain-Gate Voltage (RGS=1MΩ)V

DGR 650 V

Gate-Source (GND) Voltage VGS ±30 V

Drain Current Pulsed (1) IDM 21.2 ADC

Continuous Drain Current (Tc = 25°C) ID5.3 ADC

Continuous Drain Current (TC=100°C) ID3.4 ADC

Single Pulsed Avalanche Current(3)(Energy (2))I

AS(EAS) 27(960) A(mJ)

Maximum Supply Voltage VCC, MAX 35 V

Input Voltage Range VFB −0.3 to VCC V

VSS −0.3 to 10 V

Total Power Dissipation PD(Watt H/S) 50 W

Darting 0.4 W/°C

Operating Junction Temperature Tj+150 °C

Operating Ambient Temperature TA−25 to +85 °C

Storage Temperature Range TSTG −55 to +150 °C

FS6M12653RTC

Electrical Characteristics (SFET part)

(Ta=25°C unless otherwise specified)

Note:

1. Pulse test : Pulse wid th ≤ 300µS, duty 2%

Parameter Symbol Condition Min. Typ. Max. Unit

Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 650 - - V

Zero Gate Voltage Drain Current IDSS VDS=650V, VGS=0V - - 200 µA

VDS=520V

VGS=0V, TC=125°C- - 300 µA

Static Drain-source On Resistance (1) RDS(ON) VGS=10V, ID=1.8A - 0.73 0.9 Ω

Forward Trans Conductance (2) gfs VDS=50V, ID=1.8A - - - S

Input Capacitance Ciss VGS=0V, VDS=25V,

f = 1MHz

- 1820 - pFOutput Capacitance Coss - 185 -

Reverse Transfer Capacitance Crss - 32 -

Turn On Delay Time td(on) VDD=325V, ID=6.5A

(MOSFET switching

time are essentially

independent of

operating temperature)

-38-

Rise Time tr - 120 -

Turn Off Delay Time td(off) - 200 -

Fall Time tf - 100 -

Total Gate Charge

(Gate-Source+Gate-Drain) Qg VGS=10V, ID=6.5A,

VDS=520V (MOSFET

Switching time are

Essentially independent of

Operating temperature)

-60-

Gate Source Charge Qgs - 10 -

Gate Drain (Miller) Charge Qgd - 30 -

----=

FS6M12653RTC

Electrical Characteristics (Continued)

(Ta=25°C unless otherwise specified)

Notes:

1. These parameters are the current flowing in the Control IC.

2. These parameters, although guaranteed at the design, are not 100% tested in production.

3. These parameters, although guaranteed, are tested in EDS(wafer test) process.

4. These parameters indicate Inductor current.

Parameter Symbol Condition Min. Typ. Max. Unit

UVLO SECTION

Start Threshold Voltage VSTART VFB = GND 141516V

Stop Threshold Voltage VSTOP VFB = GND 8 9 10 V

OSCILLATOR SECTION

Initial Frequency FOSC - 637077kHz

Voltage Stability FSTABLE 12V ≤ VCC ≤ 23V 0 1 3 %

Temperature Stability (2) ∆FOSC -25°C ≤ Ta ≤ 85°C0±5±10%

Maximum Duty Cycle DMAX - 758085%

Minimum Duty Cycle DMIN ---0%

FEEDBACK SECTION

Feedback Source Current IFB VFB = GND 0.7 0.9 1.1 mA

Shutdown Feedback Voltage VSD VFB ≥ 6.9V 6.9 7.5 8.1 V

Shutdown Delay Current IDELAY VFB = 5V 3.2 4.0 4.8 µA

SOFTSTART SECTION

Softstart Voltage VSS VFB = 2 4.7 5.0 5.3 V

Softstart Current ISS VSS = V 0.8 1.0 1.2 mA

BURST MODE SECTION

Burst Mode Low Threshold Voltage VBURL VFB = 0V 10.4 11.0 11.6 V

Burst Mode High Threshold Voltage VBURH VFB = 0V 11.4 12.0 12.6 V

Burst Mode Enable Feedback Voltage VBEN VCC = 10.5V 0.7 1.0 1.3 V

Burst Mode Peak Current Limit (4) IBURPK VCC = 10.5V, VFB = 0V 0.46 0.6 0.74 A

Burst Mode Frequency FBUR VCC = 10.5V, VFB = 0V 63 70 77 KHz

CURRENT LIMIT(SELF-PROTECTION)SECTION

Peak Current Limit (4) IOVER - 2.82 3.2 3.58 A

PROTECTION SECTION

Over Voltage Protection VOVP VCC ≥ 29V 29 33 37 V

Over Current Latch Voltage (3) VOCL - 1.8 2.0 2.2 V

Thermal Shutdown Temp (2) TSD - 140 160 - °C

TOTAL DEVICE SECTION

Start Up Current ISTART VFB = GND, VCC = 14V - 0.1 0.17 mA

Operating Supply Current (1) IOP VFB = GND, VCC = 16V -1015mAIOP(MIN) VFB = GND, VCC = 12V

IOP(MAX) VFB = GND, VCC = 30V

FS6M12653RTC

Typica l Perfo rma nce Characteristics

-25 0 25 50 75 100 125 150

0.050

0.075

0.100

0.125

0.150 [mA] St art Up Curr ent vs. Temp

Temp

-25 0 25 50 75 100 125 150

9.0

9.5

10.0

10.5

11.0 [mA] Oper ating Curre nt vs. Temp

Temp

-25 0 25 50 75 100 125 150

14.0

14.5

15.0

15.5

16.0 [V] Star t T hreshold Voltage vs. T emp

Temp

-25 0 25 50 75 100 125 150

8.0

8.5

9.0

9.5

10.0 [V] Stop Threshold Voltage vs. Temp

Temp

-25 0 25 50 75 100 125 150

76 [KHz] Initia l F re qen c y vs . Temp

Temp

-25 0 25 50 75 100 125 150

79.0

79.5

80.0

80.5

81.0 [%] M aximum Dut y vs. Temp

Temp

Figure 1. Start Up Current vs. Temp Figure 2. Operating Current vs. Temp

Figure 3. Start Threshold Voltage vs. Temp Figure 4. Stop Threshold Voltage vs. Temp

Figure 5. Initial Freqency vs. Temp Figure 6. Maximum Duty vs. Temp

FS6M12653RTC

Typica l Perfo rmance Characteristics (Continued)

-25 0 25 50 75 100 125 150

0.20

0.25

0.30

0.35

0.40

0.45 [V] Feedback Of fset Voltage vs. T emp

Temp

-25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1 [mA] Feedback Source Cur r ent vs. Temp

Temp

-25 0 25 50 75 100 125 150

3.2

3.6

4.0

4.4

4.8 [uA] Sh u tDown Delay Current vs. Temp

Temp

-25 0 25 50 75 100 125 150

7.40

7.45

7.50

7.55

7.60

[V] ShutDown Feedback Voltage vs. Temp

Temp

-25 0 25 50 75 100 125 150

4.98

4.99

5.00

5.01

5.02 [V] Soft star t Voltage vs. Temp

Temp

Figure 7. Feedback O ffset Voltage vs. Temp Figure 8. Feedback Source Current vs. Temp

Figure 9. ShutDown Delay Current vs. Temp Figure 10. ShutDown Feedback Voltage vs. Temp

Figure 11. Softstart Voltage vs. Temp Figure 12. Over Voltage Protection vs. Temp

-25 0 25 50 75 100 125 150

32.0

32.5

33.0

33.5

34.0

[V]

Tem

FS6M12653RTC

Typica l Perfo rmance Characteristics (Continued)

-25 0 25 50 75 100 125 150

10.8

10.9

11.0

11.1

11.2 [V] Burst M ode Low Volt age vs. T emp

Temp

-25 0 25 50 75 100 125 150

11.8

11.9

12.0

12.1

12.2 [V] Burst M ode High Voltage vs. Temp

Temp

Figure 13. Burst Mode Low Voltage vs. Temp Figure 14. Burst Mode High Voltage vs. Temp

Figure 15. Burst Mode Peak Current vs. Temp

-25 0 25 50 75 100 125 150

0.48

0.54

0.60

0.66

0.72 [A] Burst Mode Peak Current vs. Temp

Tem

-25 0 25 50 75 100 125 150

0.48

0.54

0.60

0.66

0.72 [A] Burst Mode Peak Current vs. Temp

Tem

Figure 16. Burst Mode Peak Current vs. Temp

FS6M12653RTC

Package Dimensions

TO-220F-5L

FS6M12653RTC

Package Dimensions (Continued)

TO-220F-5L(Forming)

FS6M12653RTC

3/8/02 0.0m 001

Stock#DSxxxxxxxx

 2002 Fairchild Semicond uctor Corporation

LIFE SU PP ORT POL ICY

FAIRCHILD’S PRODUCTS AR E NOT AUTHORIZED FOR USE AS C RITICAL COMPONENTS I N LIFE S UPPORT DEVICE S

OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR

CORPORA TION. As used he rein :

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, and (c) whose failure to

perform when properly used in accordance with

instructions for use provided in the labeling, can be

reasonably expected to result in a significant injury of the

user.

2. A critical component in any component of a life support

device or syst em who se failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effec tiv ene ss.

www.fairchildsemi.com

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRO DUCTS HEREIN TO IMPROVE RELIABILITY, FUN C TION OR DESIGN . FAIRCHILD DO ES NOT ASSUME ANY

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DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIG HTS, NOR THE RIGHTS OF OTHERS.

Ordering Information

TU : Non Forming Type

YDT : Formi ng Type

Product Number Package Marking Code BVdss Rds(on)

FS6M12653RTC-TU TO-220F-5L 6M12653R

C650V 0.7

FS6M12653RTC-YDT TO-220F-5L(Forming)