HMJE13007A - Hi-Sincerity Mocroelectronics Corp.

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE200501

Issued Date : 2005.06.01

Revised Date : 2006. 07.04

Page No. : 1/5

HMJE13007A HSMC Produc t Specification

HMJE13007A

NPN EPITAXIAL PLANAR TRANSISTOR

Description

• High Voltage, High Speed Power Switch

• Switch Regulators

• PWM Inverters and Motor Controls

• Solenoid and Relay Drivers

• Deflection Circuits

Absolute Maximum Ratings (TA=25°C)

• Maximum Temperatures

Storage Temperature........................................................................................................................... -50 ~ +150 °C

Junction Temperature........................................................................................................... .......... 150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (TC=25°C).................................................................................................................... 80 W

• Maximum Voltages and Currents (TA=25°C)

VCBO Collector to Emitter Voltage...................................................................................................................... 700 V

VCEO Collector to Emitter Voltage...................................................................................................................... 400 V

VEBO Em itter to Base Voltage................................................................................................................................ 9 V

IC Collector Current ........................................................................................................................... Continuous 8 A

IB Base Current.................................................................................................................................. Continuous 4 A

Electrical Characteristics (TA=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO 700 - - V IC=1mA, VBE(off)=1.5V

BVCEO 400 - - V IC=10mA

IEBO - - 100 uA VEB=9V

ICEX - - 100 uA VCE=700V, VBE(off)=1.5V

*VCE(sat)1 --1VI

C=2A, IB=0.4A

*VCE(sat)2 --2VI

C=5A, IB=1A

*VCE(sat)3 --3VI

C=8A, IB=2A

*VBE(sat) --1.2VI

C=2A, IB=0.4A

*VBE(sat) --1.6VI

C=5A, IB=1A

*hFE1 15 - - IC=0.5A, VCE=5V

*hFE2 15 - 25 IC=2A, VCE=5V

*hFE3 13 - - IC=4A, VCE=5V

*Pulse Test: Pulse Width ≤380us, Dut y Cycle ≤2%

TO-220

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE200501

Issued Date : 2005.06.01

Revised Date : 2006. 07.04

Page No. : 2/5

HMJE13007A HSMC Produc t Specification

Characteristics Curve

Current Gain & Collector Current

100

1 10 100 1000 10000

Collector Curren t-I

(mA)

hFE

hFE @ VCE=5V

125

Saturation Voltage & Collector Curren t

100

1000

10000

1 10 100 1000 10000

Coll e c tor Current - I

(mA)

Saturation Voltage (mV)

VCE(sat) @ IB=5IB

25oC

75oC

125oC

Saturation Voltage & Collect or Cu rrent

100

1000

10000

1 10 100 1000 10000

Coll e c tor Current - I

(mA)

Satur a t ion Voltag e ( mV)

CE(sat)

@ I

=4I

125

Saturation Voltage & Col lect or Current

100

1000

10000

1 10 100 1000 10000

Coll e c tor Current - I

(mA)

Saturation Voltage (mV)

VBE(sat) @ IC=5IB

125oC

75oC

25oC

Switchange Tim e & C ollect or Cu rrent

0.1

0.1 1 10

Collector Curren t-I

(A)

Swit ching Time ( uS)...

Ton

Tstg

=125V, I

=5I

, I

=2I

Collector Output Capacitance

100

1000

0.1 1 10 100

Collector Base Voltage (V)

Capacitance (pF)

Cob

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE200501

Issued Date : 2005.06.01

Revised Date : 2006. 07.04

Page No. : 3/5

HMJE13007A HSMC Produc t Specification

Safe Operating Area

100

1000

10000

1 10 100 1000

Forward Vol tage-V

(V)

Collector Current-I

(mA)

1mS

100mS

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE200501

Issued Date : 2005.06.01

Revised Date : 2006. 07.04

Page No. : 4/5

HMJE13007A HSMC Produc t Specification

TO-220AB Dimension

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its produc ts without notice.

• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any cons equence of cust om er product design, infringement of patents, or applicat ion assistance.

Head Office And Factory:

• Head Office (Hi-Sincerit y Microelectronics Corp.): 10F.,No. 61, Sec . 2, Chung-Shan N. Rd. Taipei Tai wan R.O.C.

Tel : 886-2-25212056 Fax: 886-2-25632712, 25368454

• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industri al P ark Hsi n-Chu Taiwan. R.O.C

Tel : 886-3-5983621~5 Fax: 886-3-5982931

A B

Tab

Marking:

Control Code

Date Code

Pb Free Mark

Pb-Free: "

(Note)

Normal: None

00 JE

Note: Green label is used for pb-free packing

Pin Style: 1.Base 2.Collector 3.Emitter

Material:

• Lead solder plating: Sn60/Pb40 (Normal),

Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)

• Mold Com pound : Epoxy resin family,

flammability solid burning class: UL94V-0

3-Lead TO-220AB

Plastic Package

HSMC Package Code: E

DIM Min. Max.

A 5.58 7.49

B 8.38 8.90

C 4.40 4.70

D 1.15 1.39

E 0.35 0.60

F 2.03 2.92

G 9.66 10.28

H - *16.25

I-*3.83

J 3.00 4.00

K 0.75 0.95

L 2.54 3.42

M 1.14 1.40

N-*2.54

O 12.70 14.27

P 14.48 15.87

*: Typical, Unit: mm

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HE200501

Issued Date : 2005.06.01

Revised Date : 2006. 07.04

Page No. : 5/5

HMJE13007A HSMC Produc t Specification

Solderi ng Methods for HSMC’s Products

1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%

2. Reflow soldering of surface-mount devices

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Average ramp-up rate (TL to TP)<3

oC/sec <3oC/sec

Preheat

- Temperature Min (Tsmin)

- Temperature Max (Tsmax)

- Time (min to max) (ts)

100oC

150oC

60~120 sec

150oC

200oC

60~180 sec

Tsmax to TL

- Ramp-up Rate <3oC/sec <3oC/sec

T ime mai n tained abov e :

- Temperature (TL)

- Ti me (tL)183oC

60~150 sec 217oC

60~150 sec

Peak Temperature (TP) 240oC +0/-5oC 260oC +0/-5oC

Time within 5oC of actual Peak

Temperature (tP)10~30 sec 20~40 sec

Ramp- down Rate <6oC/sec <6oC/sec

Time 25oC to Peak Temperature <6 minutes <8 minutes

3. Flow (wave) soldering (solder dipping)

Products Peak temperature Dipping time

Pb devices. 245oC ±5oC 10sec ±1sec

Pb-Free de vic es . 260oC ±5oC 10sec ±1sec

Figure 1: Tem per ature prof ile

Ramp-down

Ramp-up

max

min

Critical Zone

to T

Preheat

25 t 25

C to Peak

Time

Temperature