High-Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
•Collector –Emitter Sustaining Voltage —
VCEO(sus) = 140 Vdc (Min)
•Excellent Second Breakdown Capability
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Value
ÎÎÎÎÎ
ÎÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VCEO
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
140
ÎÎÎÎÎ
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VCB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
160
ÎÎÎÎÎ
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
VEB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
7.0
ÎÎÎÎÎ
ÎÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Collector Current — Peak
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
IC
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
10
15**
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
Peak
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
IB
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
7.0
—
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
PD
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
117
0.67
ÎÎÎÎÎ
ÎÎÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎÎÎ
Î
ÎÎÎÎ
Î
ÎÎÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
–65 to +200
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Max
ÎÎÎÎÎ
ÎÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎÎÎ
ÎÎÎÎÎÎ
RθJC
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
1.5
ÎÎÎÎÎ
ÎÎÎÎÎ
C/W
*Indicates JEDEC Registered Data.
**This data guaranteed in addition to JEDEC registered data.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 10 1Publication Order Number:
2N3442/D
2N3442
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS
117 WATTS
CASE 1–07
TO–204AA
(TO–3)
2N3442
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎÎ
ÎÎÎÎ
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage
(IC = 200 mAdc, IB = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
140
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
Î
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICEO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
200
Î
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150C)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
ICEX
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
5.0
30
Î
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IEBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
5.0
Î
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
20
7.5
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
70
—
Î
Î
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
ÎÎÎÎ
ÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
—
ÎÎÎÎ
ÎÎÎÎ
5.0
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
VBE(on)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
5.7
Î
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product (2)
(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
fT
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
80
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
—
Î
kHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small–Signal Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
hfe
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
12
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
72
Î
—
*Indicates JEDEC Registered Data.
NOTES:
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%.
2. fT = |hfe| • ftest
1.0
00 25 50 75 100 125 150 175 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
/PD(MAX), POWER DISSIPATION (NORMALIZED)
0.8
0.6
0.4
0.2
PD
2N3442
http://onsemi.com
3
ACTIVE REGION SAFE OPERATING AREA INFORMATION
There are two limitations on the power–handling ability
of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 2 is based on TJ(pk) = 200C; TC is vari-
able depending on conditions. At high case temperatures,
thermal limitations will reduce the power that can be han-
dled to values less than the limitations imposed by second
breakdown.
20
2.0
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.2 5.0 20 100 200
IC, COLLECTOR CURRENT (AMP)
CURRENT LIMIT
THERMAL LIMIT @ TC = 25°C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
dc
1.0 ms
10 µs
0.5
0.3
3.0 7.0 10 30 50 70
30 µs
50 µs
100 µs
TJ = 200°C
100 ms
Figure 2. 2N3442
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
400
0.1
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
4.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10
40
20
100
60
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
-55°C
VCE = 4.0 V
6.0
10
200
7.0
Figure 4. Collector–Saturation Region
1.4
2.0
IB, BASE CURRENT (mA)
0
5.0 10 20 50 100 200 500 1.0k 2.0k
1.0
0.8
0.6
0.4
IC = 1.0 A
TJ = 25°C
4.0 A 8.0 A
1.2
0.2
2.0 A
2N3442
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
UL
GB
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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