1/3
P01xxxA
®
March 2000 - Ed: 1A
SENSITIVE SCR
Symbol Parameter Value Unit
IT(RMS) RMS on-state current (180° conduction angle) TI= 55°C 0.8 A
IT(AV) Mean on-state current (180° conduction angle) TI= 55°C 0.5 A
ITSM Non repetitive surge peak on-state current
(Tjinitial = 25°C ) tp = 8.3 ms 8 A
tp=10ms 7
I
2
tI
2
t Value for fusing tp = 10 ms 0.24 A2s
dI/dt Critical rate of rise of on-state current
IG=10mA di
G/dt = 0.1 A/µs. 30 A/µs
Tstg
TjStorage temperature range
Operating junction temperature range - 40, + 150
- 40, + 125 °C
Tl Maximum lead temperature for soldering during 10s
(at 2.0mm from case) 260 °C
ABSOLUTE MAXIMUM RATINGS
TO92
n
IT(RMS) = 0.8A
n
VDRM /V
RRM= 200V to 600V
FEATURES
Symbol Parameter Voltage Unit
BDM
V
DRM
VRRM Repetitive peak off-state voltage
Tj= 125°CR
GK =1K 200 400 600 V
High performance planar technology. These parts
are intended for general purpose applications
where low gate sensitivity is required.
DESCRIPTION
P01xxxA
PG (AV)= 0.1 W PGM =2W(tp=20µs) IGM =1A(tp=20µs)
GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth(j-a) Junction to ambient 150 °C/W
Rth(j-l) Junction to leads for DC 80 °C/W
THERMAL RESISTANCES
Symbol Test Conditions SENSITIVITY Unit
09 02 11 18 15
IGT VD=12V (DC) RL=140ΩTj= 25°C MIN 4 0.5 15 µA
MAX 1 200 25 5 50
VGT VD=12V (DC) RL=140ΩTj= 25°C MAX 0.8 V
VGD VD=VDRM RL=3.3kΩ
RGK =1KΩTj= 125°C MIN 0.1 V
VGRM IRG =10µATj= 25°C MIN 8 V
tgd VD=VDRM ITM=3xI
T(AV)
dIG/dt = 0.1A/µsI
G
= 10mA Tj= 25°C TYP 0.5 µs
IHIT= 50mA RGK =1KΩTj= 25°C MAX 5 7 mA
ILIG=1mA RGK =1KΩTj= 25°C MAX 6 8 mA
VTM ITM= 1.6A tp= 380µsTj= 25°C MAX 1.95 V
IDRM
IRRM VD=V
DRM RGK =1KΩ
V
R=V
RRM Tj= 25°C MAX B/D:1-M:10 µA
Tj= 125°C MAX 100 µA
dV/dt VD= 67%VDRM RGK =1KΩTj= 125°C MIN 50 75 80 75 100 V/µs
tq ITM=3xI
T(AV)V
R
=35V
dI/dt=10A/µs tp=100µs
dV/dt=10V/µs
VD= 67%VDRM RGK =1KΩ
Tj= 125°C MAX 200 µs
ELECTRICAL CHARACTERISTICS
2/3
P01xxxA
3/5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.2
0.4
0.6
0.8
1
P(W)
360
O
=180
o
= 120
o
=90
o
=60
o
=30
o
DC
I(A)
T(AV)
Fig.1 : Maximum average power dissipation ver-
sus average on-state current.
0 20406080100120140
0
0.2
0.4
0.6
0.8
1
P (W) Ttab ( C)
o
Rth(j-a)
Tamb ( C)
o
-115
-100
-95
-120
-105
-125
-110
Fig.2 : Correlation between maximum average
power dissipation and maximum allowable tem-
perature (Tamb and Ttab).
0 102030405060708090100110120130
0
0.2
0.4
0.6
0.8
1
I (A)
T(AV)
=180
o
DC
Tamb ( C)
o
Fig.3 : Average on-state current versus tab tem-
perature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00 Zth(j-a)/Rth(j-a)
tp(s)
Standard foot print , e(Cu)=35
m
Fig.4 : Relative variation of thermal impedance
junction to ambient versus pulse duration.
Igt
Ih
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
-40 -20 0 20 40 60 80 100 120 140
Igt[Tj]
Igt[Tj=25 C]
o
Ih[Tj]
Ih[Tj=25 C]
o
Tj( C)
o
Fig.5 : Relative variation of gate trigger current
and holding current versus junction temperature.
1 10 100 1,000
0
1
2
3
4
5
6
7
8
Tj initial = 25 C
o
Number of cycles
I(A)
TSM
Fig.6 : Non repetitive surge peak on-state current
versus number of cycles.
P01xxxA
4/5
110
0.1
1
10
100
I(A).I
2
t(A
2
s)
TSM
Tj initial = 25 C
o
ITSM
tp(ms)
I
2
t
Fig.7 : Non repetitive surge peak on-state current
for a sinusoidal pulse with width : tp 10ms, and
corresponding value of I2t.
00.511.522.533.544.555.5
0.1
1
10
I(A)
TM
Tj initial
25 C
o
Tj max
V(V)
TM
Tj max
Vto =0.95V
Rt =0.600
Fig.8 : On-state characteristics (maximum val-
ues).
1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04 1.0E+05 1.0E+06
0.1
1.0
5.0
Ih(Rgk)
Ih(Rgk=1k )
Tj=25 C
o
Rgk( )
Fig.9 : Relative variation of holding current versus
gate-cathode resistance (typical values).
P 01 02 A A 1 A A 3
5 x L x
SCR Planar
Current
Sensitivity
Voltage
Package
A = TO92
Bulk or
Tape & Reel
ORDERING INFORMATION
P01xxxA
5/5
PACKAGE MECHANICAL DATA
TO92
D
F
a
E
B
A
C
REF.
DIMENSIONS
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 1.35 0.053
B 4.70 0.185
C 2.54 0.100
D 4.40 0.173
E 12.70 0.500
F 3.70 0.146
a 0.45 0.017
Type Marking Package Weight Delivery mode Base qty
P0109BA P0109BA
TO92 0.2g Bulk
Tape & Reel 2500
2000
P0109DA P0109DA
P0109MA P0109MA
P0102BA P0102BA
P0102DA P0102DA
P0102MA P0102MA
P0111BA P0111BA
P0111DA P0111DA
P0111MA P0111MA
P0115BA P0115BA
P0115DA P0115DA
P0115MA P0115MA
P0118BA P0118BA
P0118DA P0118DA
P0118MA P0118MA
MARKING
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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