2SK2643-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 500 15 60 35 15 200 125 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=1.63mH, Vcc=50V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Min. Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=35V VDS=0V ID=7.5A VGS=10V Typ. Max. 500 3.5 Tch=25C Tch=125C ID=7.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=15A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 4.0 4.5 10 500 0.2 1.0 10 100 0.44 0.55 4.5 9.0 1400 2100 250 380 110 170 30 50 110 170 90 140 55 90 15 1.1 1.65 500 8.0 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. Units 1.0 35.0 C/W C/W 1 2SK2643-01 FUJI POWER MOSFET Characteristics Safe operating area Power Dissipation PD=f(Tc) 150 ID=f(VDS):D=0.01,Tc=25C 10 2 125 t=0.01 s 1 s 10 DC 1 10 s ID [A] PD [W] 100 75 100s 50 10 1ms 0 t D= 25 t T 10ms 100ms T 0 0 50 100 10 150 -1 10 0 10 1 10 o Tc [ C] 2 10 3 VDS [V] Typical output characteristics Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 40 VGS=20V 35 10V 10 8V ID [A] ID [A] 20 10 nd e mm 7V 15 6.5V 10 eco 10 0 -1 6V 5 0 0 5 10 tr No 15 20 5.5V 5V 25 30 10 -2 35 0 1 2 3 5 6 7 8 9 10 Typical drain-source on-state resistance Typical forward transconductance RDS(on)=f(ID):80s Pulse test, Tch=25C gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C 4.0 3.5 VGS= 5V 5.5V 6.5V 6V 7V 3.0 RDS(on) [ ] 1 gfs [s] 10 4 VGS [V] VDS [V] 10 n sig ew n for 25 . de 1 30 0 2.5 2.0 1.5 1.0 8V 10V 20V 0.5 10 0.0 -1 10 -1 10 0 10 1 0 5 10 15 20 25 ID [A] ID [A] http://store.iiic.cc/ 2 2SK2643-01 FUJI POWER MOSFET Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS Drain-source on-state resistance RDS(on)=f(Tch):ID=7.5A,VGS=10V 2.0 6.0 5.0 1.5 max. 1.0 VGS(th) [V] RDS(on) [ ] 4.0 max. typ. min. 3.0 2.0 typ. 0.5 1.0 0.0 0.0 -50 0 50 100 -50 150 0 50 100 150 o Tch [ C] o Tch [ C] Typical capacitances C=f(VDS):VGS=0V,f=1MHz Typical gate charge characteristic VGS=f(Qg):ID=15A,Tch=25C 10n 40 400 Vcc=400V 300 200 20 e m m 15 150 100V 100 10 50 0 0 20 40 60 ot N 80 100 o c e r 120 140 160 n sig ew n for C [F] 25 VGS [V] VDS [V] 1n 250 250V . de 0V 35 10 c= 0V c V 25 V 0 30 40 350 Ciss Coss nd Crss 100p 5 10p 0 180 10 -2 10 -1 10 Qg [nC] 0 10 1 10 2 VDS [V] Forward characteristic of reverse of diode Avalanche energy derating IF=f(VSD):80s Pulse test,VGS=0V Eas=f(starting Tch):Vcc=50V,IAV=15A 200 10 1 150 o 10 10 10 0 Eas [mJ] IF [A] Tch=25 C typ. 100 -1 50 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 50 100 150 o VSD [V] Starting Tch [ C] http://store.iiic.cc/ 3 2SK2643-01 1 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T 10 0 Zthch-c [K/W] 10 D=0.5 0.2 0.1 -1 10 0.05 t D= 0 t T T 0.02 0.01 -2 10 -5 10 -4 -3 10 10 -2 10 -1 10 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4