2N3055A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N3055A is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO3 MAXIMUM RATINGS IC 15 A IB 7.0 A VCE 60 V PDISS 115 W @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC JC 1.52 OC/W CHARACTERISTICS SYMBOL BVCEO ICEV ICEO IEBO hFE VCE(SAT) VBE(ON) Cob ft Is/b td tr ts tf NONE O TC = 25 C TEST CONDITIONS IC = 200 mA VCE = 100 V VCE = 30 V VEB = 7.0 V VCE = 2.0 V VCE = 4.0 V IC = 4.0 A IC = 10 A IC = 15 A VCE = 4.0 V VCB = 10 V VCE = 4.0 V VCE = 60 V IC = 4.0 A IC = 4.0 A IC = 4.0 A IC = 4.0 A MINIMUM TYPICAL VBE = -1.5 V O TC = 25 C O TC = 150 C 10 20 5.0 IC = 4.0 A IC = 4.0 A IC = 10 A IB = 0.4 A IB = 3.3 A IB = 7.0 A IC = 4.0 A f = 1.0 MHz f = 1.0 MHz IC = 1.0 A t = 500 mS (NONREPETITIVE) IB1 = IB2 = 0.4 A IB1 = IB2 = 0.4 A IB1 = IB2 = 0.4 A IB1 = IB2 = 0.4 A 0.7 60 0.8 1.95 * MAXIMUM UNITS V 60 5.0 30 700 5.0 70 70 mA A mA --- 1.1 3.0 5.0 1.8 600 6.0 V V pF MHz A S S S S 0.5 4.0 3.0 6.0 *** !