TOSHIBA TLP814 TOSHIBA PHOTO-INTERRUPTER INFRARED LED + PHOTOTRANSISTOR TLP814 MOTOR ROTATION AND IRIS DETECTION FOR CAMERAS TRACK DETECTION IN MICRO FLOPPY DISK DRIVE @ Very small package High resolution : Slit width = 0.4mm e Gap : 1.5mm e Current transfer ratio : I/Ip = 2% (min) Can be mounted directly on PCB using the stand off of lead. TOSHIBA 11-13H1 Weight : 0.1 g (typ.) MAXIMUM RATINGS (Ta = 25C) CHARACTERISTIC SYMBOL | RATING | UNIT Forward Current If 50 mA | Forward Current Derating ca] Alf/ 0. mA / | (Ta > 25C) B/*C 0.67 re Reverse Voltage VR 5 Vv os Collector-Emitter Voltage VCEO 35 Vv | Emitter-Collector Voltage VECO 5 Vv 5D Collector Power Dissipation Pc 75 mW | Collector Power Dissipation B _ 9, f | Derating (Ta > 25C) ape /C 1 mW /C A | Collector Current Ic 20 mA Operating Temperature Range Topr 25~85 C Storage Temperature Range Tstg 40~100 C 2002-04-04TOSHIBA TLP814 OPTICAL AND ELECTRICAL CHARACTERISTICS (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION Min | Typ. | Max | UNIT Q Forward Voltage VE Ip = 10mA 1.00] 1.15] 130] V Fi | Reverse Current IR VR=5V 10} pA Peak Emission Wavelength AP Ip =5mA 940) nm 4 F Dark Current Ip (cro) | Vcr = 20 V, Ip = 0 | | oa] pA A S Peak Sensitivity Wavelength Ap 800} nm S Current Transfer Ratio Ic/Ip |Vcrk=0.6V, Ip=5mA 2 5} % Collector-Emitter Saturation 4 = = By Voltage VCE (sat) | Ir = 8mA, Ic = 0.1mA 0.1 04) V | Rise Ti t = = 50}; & | Rise ime r Voc 5V,I = 0.2mA, ys Fall Time tf Ry, =1k0 (Note) 50; (Note) : ty, t Test circuit ry J Le I Vv F _. | - cc - 0% VOUT te Vout ----t 10% gRL, td te tr f ts PRECAUTIONS The following points must be borne in mind. 1. Soldering temperature : 260C max Soldering time : 5s max (Soldering must be performed 1.5mm under the package body.) 2. Ensure that no residual flux or chemicals adhere to the light-emitting and light-receiving surfaces. ENVIRONMENT O The device should not be exposed to corrosive gases, such as hydrogen sulfide gas and a sea breeze. The device should not be exposed to dust. The device should not be exposed to direct sunlight. In essence, the device should not be subjected to any load which may result in deformation or performance deterioration. CIRCUIT DESIGN Conversion efficiency falls over time due to the current which flows in the infrared LED. When designing a circuit, take into account this change in conversion efficiency over time. The ratio of fluctuation in conversion efficiency to fluctuation in infrared LED optical output is 1:1. Ic/Ip(t) Po) Ic/Ip(0) PQ (0) 2 2002-04-04TOSHIBA TLP814 PACKAGE DIMENSIONS 11-13H1 Unit : mm fly 420.2 3.8 +0.2 cN +0.15 > : 1.5 0 0.40.1 +0.1 fg 259 Center of sensor 3.740.2 520.2 tt t bt A pg 0.2 max 0.15+0.1 | (3.04) (2.54) Cross section between A and A 6x1 | 1 H H 4 ( ) : Reference value Weight : 0.1 (typ.) PIN CONNECTION 1 4 2 3 1. Anode 2. Cathode 3. Emitter 4. Collector 3 2002-04-04TOSHIBA TLP814 Ip Ta Pc Ta he a zo a5 az oe S3 S a Bo Op, Bm a= a a ae oS =a SE a Be a AP <8 qo a < oA 3 < 0 20 40 60 80 100 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) AMBIENT TEMPERATURE Ta (C) If VE (typ.) Ic/IF Ip (typ.) Ta = 25C Ta = 75C FORWARD CURRENT Ip (mA) CURRENT TRANSFER RATIO IC/IF (%)} 1 3 10 30 100 0.8 0.9 1.0 1.1 1.2 1.3 1.4 FORWARD CURRENT Ip (mA) FORWARD VOLTAGE Vp (V) Ic - IF (typ.) 1 Ta = 25C 5 3 Ic VCE (typ.) 0.5 0.3 0.1 COLLECTOR CURRENT Ic (mA) 0.03 COLLECTOR CURRENT Ic (mA) 0.01 0 2 4 6 8 10 1 3 10 30 100 300 1000 FORWARD CURRENT Ip mA) COLLECTOR-EMITTER VOLTAGE VcE (V) 4 2002-04-04TOSHIBA TLP814 RELATIVE COLLECTOR CURRENT Ic COLLECTOR-EMITTER SATURATION VOLTAGE Vcr (sat) (VY) RELATIVE Ic Ta (typ.) Ip=5mA 0.2 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) VCE (sat) Ta (typ.) 0.1 2 Qo 2 -40 -20 0 20 40 60 80 100 AMBIENT TEMPERATURE Ta (C) DARK CURRENT Ip(cEo) (A) SWITCHING TIME (ys) Ip (cro) - Ta (typ.) 20 40 60 80 100 120 AMBIENT TEMPERATURE Ta (C) SWITCHING CHARACTERISTICS (NON SATURATED OPERATION) _ (typ.) Ta = 25C tf REPETITIVE FREQUENCY = 1 kHz ty DUTY = 50% VouT=1V 0.3 0.5 1 3. 5 10 30 50 LOAD RESISTANCE Ry, (kQ) 2002-04-04SWITCHING CHARACTERISTICS DETECTION POSITION (SATURATED OPERATION) (typ.) CHARACTERISTICS (1) (typ.) Ta=25C te e +944 Voo=5V Zo. d_t VouT2=4.6V & | Ip=8mA 8 JK = | 5 S 08 | = 8 \ SHUTTER Z ; = oa % > g : | 5 5 q ei S = =~ 0 w -16 -0.8 0 0.8 16 RELATIVE COLLECTOR CURRENT ta 1 3 5 10 30 50 100 300 500 LOAD RESISTANCE Ry, (Q) DETECTION POSITION CHARACTERISTICS (2) (typ.) 1.2 SHUTTER ata 1 0 04 08 12 16 2.0 2.4 28 3.2 DISTANCE d (mm) DISTANCE d (mm) SWITCHING TIME TEST CIRCUIT Ip Vcc VOUT af eT te iy 90% VOUT RL 10% ta tf || ts 2002-04-04TOSHIBA TLP814 RESTRICTIONS ON PRODUCT USE 000707EAC @ TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. @ The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. @ Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. @ The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. @ The information contained herein is subject to change without notice. 7 2002-04-04