©2010-2018 Peregrine Semiconductor Corp. All rights reserved.
Page 1 of 12
Document No. DOC-77985-3 | www.psemi.com
Features
HaRP™ technology enhanced
Fast settling time
Eliminates gate and phase lag
No drift in insertion loss and phase
High linearity: 58 dBm IIP3
Low insertion loss: 0.8 dB @ 3 GHz,
1.0 dB @ 6 GHz and 1.2 dB @ 8 GHz
High isolation: 45 dB @ 3 GHz,
39 dB @ 6 GHz and 31 dB @ 8 GHz
Maximum power handling: 30 dBm @
8 GHz
High ESD tolerance of 2 kV HBM on
RFC and 1 kV HBM on all other pins
PE42540
UltraCMOS® SP4T RF Switch
10 Hz8 GHz
The PE42540 is a HaRP™ technology-enhanced
absorptive SP4T RF switch developed on UltraCMOS®
process technology. This switch is designed specifically
to support the requirements of the test equipment and
ATE market. It comprises four symmetric RF ports and
has very high isolation. An on-chip CMOS decode logic
facilitates a two-pin low voltage CMOS control interface
and an optional external VSS feature. High ESD
tolerance and no blocking capacitor requirements make
this the ultimate in integration and ruggedness.
The PE42540 is manufactured on Peregrine’s
UltraCMOS process, a patented variation of silicon-on-
insulator (SOI) technology on a sapphire substrate,
offering the performance of GaAs with the economy
and integration of conventional CMOS.
Figure 1. Functional Diagram
RF4
RF1
RF3
CMOS Control/
Driver and ESD
VDD V1
ESD
RF2
V2
ESD
50
ESD
50
ESD
50
ESD
50
VssEXT
RFC
Figure 2. Package Type
32-lead 5 × 5 mm LGA
Product Description
Product Specification
71-0067
Document No. DOC-77985-3 | UltraCMOS® RFIC Solutions
Page 2 of 12
©2010-2018 Peregrine Semiconductor Corp. All rights reserved.
PE42540
Product Specification
Table 1. Electrical Specifications @ +25°C, VDD = 3.3V, VSS_EXT = 0V (ZS = ZL = 50Ω)
Parameter Condition Min Typ Max Unit
Operating frequency 10 Hz1 8 GHz
RFCRFX insertion loss
10 Hz9 kHz
3000 MHz
6000 MHz
7500 MHz
8000 MHz
0.7
0.8
1.0
1.1
1.2
1.0
1.1
1.3
1.5
1.6
dB
dB
dB
dB
dB
RFXRFX isolation
10 Hz9 kHz
3000 MHz
6000 MHz
7500 MHz
8000 MHz
70
40
34
27
25
80
45
39
32
31
dB
dB
dB
dB
dB
RFCRFX isolation
10 Hz9 kHz
3000 MHz
6000 MHz
7500 MHz
8000 MHz
74
40
28
24
21
84
45
33
29
27
dB
dB
dB
dB
dB
Return loss (RFC to active port)
10 Hz9 kHz
3000 MHz
6000 MHz
7500 MHz
8000 MHz
24
23
18
14
13
dB
dB
dB
dB
dB
Return loss (terminated port)
10 Hz9 kHz
3000 MHz
6000 MHz
7500 MHz
8000 MHz
35
18
13
11
10
dB
dB
dB
dB
dB
Settling time 50% CTRL to 0.05 dB final value (40 to +85 °C) rising edge
50% CTRL to 0.05 dB final value (40 to +85 °C) falling edge 14
15
18
45
μs
μs
Switching time (TSW) 50% CTRL to 90% or 10% RF 5 8 μs
P1dB1 input 1 dB compression
point RFXRFC All bands @ 1:1 VSWR, 100% duty cycle 31 33 dBm
Input IP3 8000 MHz 58 dBm
Input IP2 8000 MHz 100 dBm
Note 1: Maximum operating PIN (50Ω) is shown in Table 3. Please refer to Figure 4, Figure 5 and Figure 6 when operating the part at low frequency.
©2010-2018 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-77985-3 | www.psemi.com
PE42540
Page 3 of 12
Product Specification
Figure 3. Pin Configuration (Top View)
Pin # Pin Name Description
1, 3-6, 8,
9-12, 14-17,
19-22, 24-26,
28, 32
GND Ground
2 RF42 RF I/O
7 RF22 RF I/O
13 RFC2 RF common
18 RF12 RF I/O
23 RF32 RF I/O
27 VDD Supply
29 V1 Switch control input, CMOS logic level
30 V2 Switch control input, CMOS logic level
31 VSS_EXT1 External VSS negative voltage
Paddle GND Exposed solder pad: Ground for
proper operation
Table 2. Pin Descriptions
Notes: 1. Use VSS_EXT (pin 31, VSS_EXT = VDD) to bypass and disable internal
negative voltage generator. Connect VSS_EXT (pin 31) to GND
(VSS_EXT = 0V) to enable internal negative voltage generator.
2. All RF pins must be DC blocked with an external series capacitor
or held at 0 VDC.
Table 3. Operating Ranges
Parameter Min Typ Max Unit
Supply voltage, VDD 3.0 3.3 3.55 V
Negative power supply voltage1,
VSS_EXT 3.6 3.3 3.0 V
Negative supply current, Iss 10 40 µA
Power supply current, IDD
VDD = 3.3V, VSS_EXT = 0V,
Temp = +85 °C
90 160 µA
Power supply current, IDD
VDD = 3.6V, VSS_EXT used 50 µA
Control voltage high (V1, V2) 1.2 1.5 VDD V
Control voltage low (V1, V2) 0 0 0.4 V
Control current, ICTRL 1 µA
PIN thru path2 (50Ω, RF power in)
9 kHz 1 GHz
1 GHz 8 GHz
(85 °C, VSS_EXT = 3.0V)
(85 °C, VSS_EXT = 0.0V)
(85 °C, VSS_EXT = 3.5V)
Fig. 46
30
30
28
27.5
dBm
Max power into termination (50Ω)
9 kHz ≤ 6 MHz2,3
6 MHz8 GHz2,3
Fig. 46
20
dBm
Max power, hot switching (50Ω)
9 kHz ≤ 6 MHz2,3
6 MHz8 GHz2,3
Fig. 46
20
dBm
Operating temperature range, TOP 40 +85 °C
Notes: 1. Applies only when external VSS power supply is used. Otherwise,
VSS_EXT = 0.
2. 100% duty cycle (40 to +85 °C, 1:1 VSWR).
3. Do not exceed 20 dBm.
8
7
6
5
4
3
2
1 24
23
22
21
20
19
18
17
32 31 30 29 28 27 26 25
161514131211109
Exposed Pad
GND
RF2
RF4
GND
GND
GND
GND
GND
GND
RF1
RF3
GND
GND
GND
GND
GND
GND
GND
GND
GND
GND
RFC
GND
GND
GND
GND
VSS_EXT
V2
V1
GND
VDD
GND
Pin 1 Dot
Marking
Document No. DOC-77985-3 | UltraCMOS® RFIC Solutions
Page 4 of 12
©2010-2018 Peregrine Semiconductor Corp. All rights reserved.
PE42540
Product Specification
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be
restricted to the limits in the Operating Ranges
table. Operation between operating range
maximum and absolute maximum for extended
periods may reduce reliability.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Latch-Up Immunity
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Switching Frequency
The PE42540 has a maximum 25 kHz switching
rate when the internal negative voltage generator
is used (pin 31 = GND). The rate at which the
PE42540 can be switched is only limited to the
switching time (Table 1) if an external negative
supply is provided at (pin 31 = VSS_EXT).
Table 5. Truth Table
State V1 V2
RF1 on 0 0
RF2 on 1 0
RF3 on 0 1
RF4 on 1 1
Spurious Performance
The typical spurious performance of the PE42540
is 144 dBm when VSS_EXT = 0V (pin 31 = GND).
If further improvement is desired, the internal
negative voltage generator can be disabled by
setting VSS_EXT = VDD.
Moisture Sensitivity Level
The moisture sensitivity level rating for the
PE42540 in the 32-lead 5 × 5 mm LGA package
is MSL3.
Optional External Vss
For proper operation, the VSS_EXT pin must be
grounded or tied to the Vss voltage specified in
Table 3. When the VSS_EXT pin is grounded, FETs
in the switch are biased with an internal voltage
generator. For applications that require the lowest
possible spur performance, VSS_EXT can be
applied externally to bypass the internal negative
voltage generator.
Table 4. Absolute Maximum Ratings
Parameter Min Max Unit
Maximum junction temperature +150 °C
Storage temperature range, TST 60 +150 °C
Supply voltage, VDD 0.3 4 V
Control voltage (V1, V2) 4 V
PIN thru path2 (50Ω, RF power in)
9 kHz 1 GHz
1 GHz 8 GHz
(85 °C, VSS_EXT = 3.0V)
(85 °C, VSS_EXT = 0.0V)
(85 °C, VSS_EXT = 3.5V)
Fig. 46
30
30
28
27.5
dBm
Max power into termination (50Ω)
9 kHz ≤ 6 MHz1
6 MHz8 GHz
Fig. 46
20
dBm
ESD voltage HBM2
RFC
All pins
2000
1000
V
V
ESD voltage CDM3, all pins 450 V
ESD voltage MM4, all pins 100 V
Notes: 1. Do not exceed 20 dBm.
2. Human body model (MIL-STD 883 Method 3015).
3. Charged device model (JEDEC JESD22C101).
4. Machine model (JEDEC JESD22-A115-A).
©2010-2018 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-77985-3 | www.psemi.com
PE42540
Page 5 of 12
Product Specification
VDD VSS_EXT Minimum Peak
Voltage at RF Port
Maximum Peak
Voltage at RF Port
3.0 0.0 0.2 1.2
3.0 3.0 0.6 1.6
3.3 3.3 0.3 1.3
3.5 3.5 0.1 1.1
3.6 3.6 0.0 1.0
Low Frequency Operation
Table 6 shows the minimum and maximum
voltage limits when operating the device under
various VDD and VSS_EXT voltage conditions below
9 kHz. Refer to Figures 4, 5 and 6 to determine
the maximum operating power over the frequency
range of the device.
Maximum Operating Power vs Frequency
Figures 4, 5 and 6 show the power limit of the
device will increase with frequency. As the
frequency increases, the contours and maximum
power limit will increase as shown in the curves.
Table 6. Instantaneous RF Voltage Limits for
Operation Below 9 kHz
Thermal Data
Psi-JT (JT), junction top-of-package, is a thermal
metric to estimate junction temperature of a de-
vice on the customer application PCB (JEDEC
JESD512).
JT = (TJ TT)/P
where
JT = junction-to-top of package characterization
parameter, °C/W
TJ = die junction temperature, °C
TT = package temperature (top surface, in the
center), °C
P = power dissipated by device, Watts
Table 7. Thermal Data for PE42540
Parameter Typ Unit
JT 79 °C/W
JA, junction-to-ambient thermal resistance
128 °C/W
Document No. DOC-77985-3 | UltraCMOS® RFIC Solutions
Page 6 of 12
©2010-2018 Peregrine Semiconductor Corp. All rights reserved.
PE42540
Product Specification
-15
-10
-5
0
5
10
15
20
25
30
35
0 1 10 100 1,000 10,000 100,000 1,000,000
Input Power (dBm)
Frequency (kHz)
VssEXT = -3.0V, VDD = +3.0V
VssEXT = 0.0V, VDD +3.0V
VssEXT= -3.5V, VDD=+3.5V
-15
-10
-5
0
5
10
15
20
25
30
35
0 1 10 100 1,000 10,000 100,000 1,000,000
Input Power (dBm)
Frequency (kHz)
VssEXT = -3.0V, VDD = +3.0V
VssEXT = 0.0V, VDD +3.0V
VssEXT= -3.5V, VDD=+3.5V
-15
-10
-5
0
5
10
15
20
25
30
35
0 1 10 100 1,000 10,000 100,000 1,000,000
Input Power (dBm)
Frequency (kHz)
VssEXT = -3.0V, VDD = +3.0V
VssEXT = 0.0V, VDD +3.0V
VssEXT= -3.5V, VDD=+3.5V
Figure 5. Maximum Operating Power vs Frequency (Tambient = +50 oC)
Figure 4. Maximum Operating Power vs Frequency (Tambient = +25 oC)
Figure 6. Maximum Operating Power vs Frequency (Tambient = +85 oC)
©2010-2018 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-77985-3 | www.psemi.com
PE42540
Page 7 of 12
Product Specification
Frequency (Hz) Frequency (Hz)
Frequency (Hz)
Frequency (Hz)
Frequency (Hz) Frequency (Hz)
Figure 7. Insertion Loss vs VDD
(Temp = +25°C, VSS_EXT = 0)
Figure 8. Insertion Loss vs Temp
(VDD = 3.3V, VSS_EXT = 0)
Figure 10. Isolation: RFXRFX vs VDD
(Temp = +25 °C, VSS_EXT = 0)
Figure 9. Insertion Loss
(Temp = +25 °C, VDD = 3.3V, VSS_EXT = 0)
Figure 12. Isolation: RFXRFC vs VDD
(Temp = +25 °C, VSS_EXT = 0)
Figure 11. Isolation: RFXRFX vs Temp
(VDD = 3.3V, VSS_EXT = 0)
Document No. DOC-77985-3 | UltraCMOS® RFIC Solutions
Page 8 of 12
©2010-2018 Peregrine Semiconductor Corp. All rights reserved.
PE42540
Product Specification
Figure 13. Isolation: RFXRFC vs Temp
(VDD = 3.3V, VSS_EXT = 0)
Frequency (Hz)
Figure 14. Active Port Return Loss vs VDD
(Temp = +25 °C, VSS_EXT = 0)
Frequency (Hz)
Frequency (Hz)
Frequency (Hz) Frequency (Hz)
Frequency (Hz)
Figure 15. Active Port Return Loss vs Temp
(VDD = 3.3V, VSS_EXT = 0)
Figure 17. Terminated Port Return Loss vs Temp
(VDD = 3.3V, VSS_EXT = 0)
Figure 16. Terminated Port Return Loss vs VDD
(Temp = +25 °C, VSS_EXT = 0)
Figure 18. RFC Port Return Loss vs VDD
(Temp = +25 °C, VSS_EXT = 0)
©2010-2018 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-77985-3 | www.psemi.com
PE42540
Page 9 of 12
Product Specification
0
20
40
60
80
100
120
10.0E+3 100.0E+3 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9
Linearity [dBm]
Frequency [Hz]
PE42540 Linearity Performance
Nominal IIP3
[dBm]
Nominal IIP2
[dBm]
Figure 20. Linearity Performance
(Temp = +25 °C, VDD = 3.3V, VSS_EXT = 0)
Frequency (Hz)
Linearity (dBm)
Figure 19. RFC Port Return Loss vs Temp
(VDD = 3.3V, VSS_EXT = 0)
Frequency (Hz)
1.0E+10
Document No. DOC-77985-3 | UltraCMOS® RFIC Solutions
Page 10 of 12
©2010-2018 Peregrine Semiconductor Corp. All rights reserved.
PE42540
Product Specification
Figure 22. Evaluation Board Schematic
DOC-32927
Figure 21. Evaluation Board Layout
PRT-28605
Evaluation Kit
The SP4T switch evaluation board was designed to
ease customer evaluation of Peregrine’s PE42540.
The RF common port is connected through a 50Ω
transmission line via the top SMA connector, J1.
RF1, RF2, RF3 and RF4 are connected through
50Ω transmission lines via SMA connectors J2, J4,
J3 and J5, respectively. A through 50Ω transmission
is available via SMA connectors J6 and J7. This
transmission line can be used to estimate the loss of
the PCB over the environmental conditions being
evaluated.
R1 1M
0603
R5 0
0402
J8
PZC36DABN
HEADER14
1
1
3
3
5
5
7
7
22
44
66
88
10 10
12 12
14 14
13
13
9
9
11
11
C6
0.1 µF
0402
J2
142-0761-881
1
2
R2 1M
0603
J1
142-0761-881
1
2
J7
142-0761-881
1
2
C2
22 pF
0402
J5
142-0761-881
1
2
R6 0
0402
J6
142-0761-881
1
2
U1
PE42540
GND
1
RF2 7
GND
3
GND
4
GND
6GND
5
RFC 13
GND
8
GND
9
GND
10
RF4 2
GND
12
GND
16
RF1
18
RF3
23
GND
11
VDD 27
GND
14
V1 29
V2 30
VSS 31
GND
15
GND
17
GND
20
GND
21
GND
22
GND
24
GND
25
GND
26
GND
28
GND
19
GND
32
C1
22 pF
0402
C5
0.1 µF
0402
C4
22 pF
0402
R4 0
0402
J4
142-0761-881
1
2
C3
22 pF
0402
R3 0
0402
J3
142-0761-881
1
2
RF3
RF1
RF4
RF2
©2010-2018 Peregrine Semiconductor Corp. All rights reserved. Document No. DOC-77985-3 | www.psemi.com
PE42540
Page 11 of 12
Product Specification
Figure 23. Package Drawing
Figure 24. Marking Specifications
42540
YYWW
ZZZZZZZ
YYWW = Date Code
ZZZZZZZ = Assembly lot code (maximum seven characters)
DOC-65743
Third Angle
Projection
Unless otherwise specified
dimensions are in millimeters
decima l
x.x ± 0.1
x.xx ± 0.05
x.xxx ± 0.030
Interpret dimensions and tolerance
per asme y14.5 – 1994
angular
± 1°
Document No. DOC-77985-3 | UltraCMOS® RFIC Solutions
Page 12 of 12
©2010-2018 Peregrine Semiconductor Corp. All rights reserved.
PE42540
Product Specification
Device Orientation in Tape
Top of
Device
Pin 1
Direction of Feed
Notes: (I) Measured from centerline of sprocket hole to
centerline of pocket.
(II) Cumulative tolerance of 10 sprocket holes is ± 0.20.
(III) Measured from centerline of sprocket hole to
centerline of pocket.
ALL DIMENSIONS IN MILLIMETERS UNLESS OTHERWISE STATED.
Ao = 5.30 ± 0.1 mm
Bo = 5.30 ± 0.1 mm
Ko = 1.30 ± 0.1 mm
F = 5.50 ± 0.1 mm
P1 = 8.00 ± 0.1 mm
W = 12.00 ± 0.3 mm
Figure 25. Tape and Reel Drawing
Table 8. Ordering Codes for PE42540
Order Code Description Package Shipping Method
PE42540F-Z PE42540 SP4T RF switch Green 32-lead 5 × 5 mm LGA 3000 units/T&R
EK42540-07 PE42540 Evaluation kit Evaluation kit 1/Box
No p aten t ri g ht s o r li ce nse s t o a n y ci rcui ts d escri be d i n thi s da ta sh ee t are i mpli ed or gran te d to any thi rd p a rt y.
P ere gri n e’ s pro duct s are n ot desi gn ed o r i nt end ed for use i n de vi ces or sy st ems i n te nd e d f or surgi cal i mpl ant,
or i n ot he r a ppli cati ons i nte nd ed t o sup po rt or sust ai n li fe, o r i n a ny a ppli ca ti o n i n wh i ch t h e fail ure of th e
P ere gri n e prod uct co u l d crea te a si t uati o n i n whi ch p erso na l i nj ury or d eath mi g ht o ccu r. P e reg ri n e assu mes no
liability fo r dam age s, i n cl udi ng co nseq uen ti al o r i n ci de ntal dama ge s, ari si ng out of th e use of i t s pro du ct s i n
su ch a ppli cati ons.
The P e reg ri n e nam e, l o g o, Ul t ra CM OS a nd U TS i a re re gi st ere d t rad ema rks a nd HaRP , Mu l ti Swi t ch a nd DuNE
are t ra de m arks of Pereg ri n e S emi co nd uct or Co rp. P ereg ri ne pro duct s are p rote ct ed und er on e o r mo re of th e
foll owi ng U. S . P at ent s: h tt p:/ / p at e nt s. p se mi. co m .
Sales Contact and Information
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