Document No. DOC-77985-3 | UltraCMOS® RFIC Solutions
Page 4 of 12
©2010-2018 Peregrine Semiconductor Corp. All rights reserved.
PE42540
Product Specification
Exceeding absolute maximum ratings may cause
permanent damage. Operation should be
restricted to the limits in the Operating Ranges
table. Operation between operating range
maximum and absolute maximum for extended
periods may reduce reliability.
Electrostatic Discharge (ESD) Precautions
When handling this UltraCMOS device, observe
the same precautions that you would use with
other ESD-sensitive devices. Although this device
contains circuitry to protect it from damage due to
ESD, precautions should be taken to avoid
exceeding the specified rating.
Latch-Up Immunity
Unlike conventional CMOS devices, UltraCMOS
devices are immune to latch-up.
Switching Frequency
The PE42540 has a maximum 25 kHz switching
rate when the internal negative voltage generator
is used (pin 31 = GND). The rate at which the
PE42540 can be switched is only limited to the
switching time (Table 1) if an external negative
supply is provided at (pin 31 = VSS_EXT).
Table 5. Truth Table
State V1 V2
RF1 on 0 0
RF2 on 1 0
RF3 on 0 1
RF4 on 1 1
Spurious Performance
The typical spurious performance of the PE42540
is –144 dBm when VSS_EXT = 0V (pin 31 = GND).
If further improvement is desired, the internal
negative voltage generator can be disabled by
setting VSS_EXT = –VDD.
Moisture Sensitivity Level
The moisture sensitivity level rating for the
PE42540 in the 32-lead 5 × 5 mm LGA package
is MSL3.
Optional External Vss
For proper operation, the VSS_EXT pin must be
grounded or tied to the Vss voltage specified in
Table 3. When the VSS_EXT pin is grounded, FETs
in the switch are biased with an internal voltage
generator. For applications that require the lowest
possible spur performance, VSS_EXT can be
applied externally to bypass the internal negative
voltage generator.
Table 4. Absolute Maximum Ratings
Parameter Min Max Unit
Maximum junction temperature +150 °C
Storage temperature range, TST –60 +150 °C
Supply voltage, VDD –0.3 4 V
Control voltage (V1, V2) 4 V
PIN thru path2 (50Ω, RF power in)
9 kHz – 1 GHz
1 GHz – 8 GHz
(85 °C, VSS_EXT = –3.0V)
(85 °C, VSS_EXT = 0.0V)
(85 °C, VSS_EXT = –3.5V)
Fig. 4–6
30
30
28
27.5
dBm
Max power into termination (50Ω)
9 kHz ≤ 6 MHz1
6 MHz–8 GHz
Fig. 4–6
20
dBm
ESD voltage HBM2
RFC
All pins
2000
1000
V
V
ESD voltage CDM3, all pins 450 V
ESD voltage MM4, all pins 100 V
Notes: 1. Do not exceed 20 dBm.
2. Human body model (MIL-STD 883 Method 3015).
3. Charged device model (JEDEC JESD22–C101).
4. Machine model (JEDEC JESD22-A115-A).