DMN601K
Document number: DS30652 Rev. 5 - 2 1 of 5
www.diodes.com March 2012
© Diodes Incorporated
DMN601K
NEW PRODUCT
N-CHANNEL ENHAN CEMENT MODE MOSFET
Features
• Low On-Resistance: RDS(ON)
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Notes 3 & 4)
• ESD Protected Up To 2kV
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN601K-7 SOT23 3000/Tape & Reel
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.`s “Green” Policy can be found on our website at http://www.diodes.com
3. Product manufactured with Date Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Date Code Key
Year 2005 2006 2007 2008 2009 2010 2011 2011 2012 2013 2014 2015 2016 2017
Code S T U V W X Y Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View Top View
Pin Out Configuration
D
GS
Source
Gate
Drain
ESD PROTECTED TO 2kV
Equivalent Circuit
K = SAT (Shanghai Assembly / Test site)
C = CAT (Chengdu Assembly / Test site)
7K = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: S = 2005)
M = Month (ex: 9 = September)
K7K
YM
C7K
YM
DMN601K
Document number: DS30652 Rev. 5 - 2 2 of 5
www.diodes.com March 2012
© Diodes Incorporated
DMN601K
NEW PRODUCT
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS ±20 V
Drain Current (Note 5) Continuous
Pulsed (Note 6) ID 300
800 mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Value Units
Total Power Dissipation (Note 5) PD 350 mW
Thermal Resistance, Junction to Ambient R
θ
JA 357 °C/W
Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 10μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 μA VDS = 60V, VGS = 0V
Gate-Source Leakage IGSS ⎯ ⎯ ±10 μA VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS
(
th
)
1.0 1.6 2.5 V
VDS = 10V, ID =1mA
Static Drain-Source On-Resistance RDS (ON) ⎯
⎯
⎯
⎯
2.0
3.0 Ω VGS = 10V, ID = 0.5A
VGS = 5V, ID = 0.05A
Forward Transfer Admittance |Yfs| 80 ⎯ ⎯ ms VDS = 10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ ⎯ 50 pF
VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ ⎯ 25 pF
Reverse Transfer Capacitance Crss ⎯ ⎯ 5.0 pF
Notes: 5. Device mounted on FR-4 PCB.
6. Pulse width ≤10μS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
DMN601K
Document number: DS30652 Rev. 5 - 2 3 of 5
www.diodes.com March 2012
© Diodes Incorporated
DMN601K
NEW PRODUCT
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOL TAGE (V)
Fig. 1 Typical Output Characteristics
DS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
V , GATE-SOURCE VOLT AGE (V)
Fig. 2 Typical Transfer Characteristics
GS
T , CHANNEL TEMPERATURE (°C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ch
0
0.5
1
1.5
2
-50 -25 02550
75 100 125 150
0.1
I DRAIN CURRENT (A)
Fig . 4 Stati c Drain-Sou r ce O n-Re sistance vs. Drai n Curr ent
D,
1
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
1
I , DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance
vs. Drain Current
D
10
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
0
V GATE SOURCE VOLTAGE (V)
Fig. 6 St atic Drain-Source On-Resistance
vs. G ate- Source Voltag e
GS,
R , STA T IC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
DMN601K
Document number: DS30652 Rev. 5 - 2 4 of 5
www.diodes.com March 2012
© Diodes Incorporated
DMN601K
NEW PRODUCT
0
Tch, CHANNEL TEMPERATURE ( C)
Fig. 7
°
S tatic Drain-Source On-S tate Resistance
vs . Channel Temperature
R , STATIC DRAIN-SOURCE
ON-RESISTANCE ( )
DS(ON)
Ω
I , REVERSE DRAIN CURRENT (A)
DR
1
I , REVERSE DRAIN CURRENT (A)
DR
1
I , DRAIN CURRENT (A)
D
Fig .10 Fo r ward Tr ansfer Admi ttance vs . D r ai n Cu rrent
|
Y
|, F
O
R
WA
R
D
T
R
ANSFE
R
ADMI
T
T
AN
C
E (S)
fs
Package Outline Dimensions
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.903 1.10 1.00
K1 - - 0.400
L 0.45 0.61 0.55
M 0.085 0.18 0.11
α 0° 8° -
All Dimensions in mm
A
M
JL
D
F
BC
H
K
G
K1
DMN601K
Document number: DS30652 Rev. 5 - 2 5 of 5
www.diodes.com March 2012
© Diodes Incorporated
DMN601K
NEW PRODUCT
Suggested Pad Layout
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the e xpress
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
