LL103A ... LL103C Silicon Schottky Barrier Diode for general purpose applications The LL.103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward Voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications. Other uses are for click suppression, efficient full wave bridges in telephone subsets, and as blocking diodes in rechargeable low voltage battery systems. This diode is also available in DO-35 case with type designation SD103A, B, C. These diodes are delivered taped. Details see Taping. Absolute Maximum Ratings (T, = 25 C) p< 3.540.194 Cathode Mark Hoh 0.05 ef T rn cn 2 1.451 Glass case JMiniMELF Weight approx. 0.05g Dimensions in mm Symbol Value Unit Peak Reverse Voltage LL103A Venu 40 V LL103B Verm 30 Vv LL103C Vern 20 Vv Power Dissipation Pir 400 ?) mW (Infinite Heatsink) Tc = 3/8 from body derates at 4 mW/C to 0 at 125 C Junction Temperature T, 125 C Storage Temperature Range Ts -55 to+ 175 C Single Cycle Surge lesen 15 A 60 Hz sinewave 1) Valid provided that electrodes are kept at ambient temperature. SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )LL103A ... LL103C Characteristics at T, =25 C Symbol Min. Typ. Max. Unit Leakage Current atV, =30V LL103A h - - 5 pA atV, =20V LL103B ln - - 5 pA atV,=10V LL103C I, - - 5 pA Forward Voltage Drop at l.=20mA V. : - 0.37 Vv at |. = 200 mA V, - - 0.6 V Junction Capacitance ot - 50 - pF atV,=0OV,f = 1MHz Reverse Recovery Time t - 10 - ns at |. =|, = 5 mA to 200 mA, recover to 0.1 |, Typical variation of fwd. current Typical high current forward vs. fwd. voltage for primary conduction conduction curve through the Schottky barrier tp = 300 us, duty cycle = 2% mA LL103 A 103 5 LL103 y 2 L Ip 10 / I; 4 7 10 / 3 / 197 1 / yr A Pa 107 0 0 0.5 1Vv 0 05 1 15V SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )LL103A ... LL103C Typical non repetitive forward surge current versus pulse width Rectangular pulse Typical variation of reverse current at various temperatures A LL103 MA LL103 50 103 Tamb=125 C [eee I 100 F Ip 102 a LO = 30 75S { | 10 + = 50C be 20 a i a IN 1 < 3 i 10 25 C Lo 0 3 7 107} 10 107 10' 1 10 102 10ms 0 10 8=62006 30's 4CSTV _* tp __+ \p Blocking voltage deration Typical capacitance versus temperature at various versus reverse voltage average forward currents V LL103 pF LL103 50 100 5 Ve 40 Crot * 10OmA 3 2 30 I-=400mA 200mA 10 N 7 20 5 4 3 10 x 2 0 1 0 100 200 C 0 10 20 30 40 50 Vv Tamb SEMTECH ELECTRONICS LTD. ( wholly owned subsidiary of AGMEY TECHNOLOGY LTO. )