_- Te ee eae nenemaoes 3875081 G E SOLID STATE O1 d jsazsoa1 0018344 4 D T-39-11 Standard Power MOSFETs File Number 1586 2N6755, 2N6756 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode _HANNEL ENHANCEMENT mone Power Field-Effect Transistors 0 12A and 14A, 60V - 100V Tos(on) = 0.18 Q and 0.25 2 Features: 6 a = SOA is power-dissipation limited a B Nanosecond switching speeds @ Linear transfer characteristics 3 " High input impedance 9208-23741 = Majority carrier device TERMINAL DIAGRAM The 2N6755 and 2N6756 are n-channel enhancement- mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching TERMINAL DESIGNATION converters, motor drivers, relay drivers, and drivers for pRaIN high-power bipolar switching transistors requiring high SOURCE (FLANGE) speed and low gate-drive power. These types can be oper- ated directly from integrated circuits. , These types are supplied in the JEDEC TO-204AA steel package. GATE 928-37801 JEDEC TO-204AA Absolute Maximum Ratings Oran ~ Source Voltage Voltages Oran Current Gate ~ Source Voltage 420 Dissipation 75 (See Fig 11) 1 11) ~55 to 180 Storage Tempersture Range to 180 327 Seype J sa7soa1 oovesas o ff ~ t-39-11 Standard Power MOSFETs 2N6755, 2N6756 Electrical Characteristics @ To = 25C (Unless Otherwise Specified) . . Parameter Typ Min. | Typ. Max. Unite Test Conditions BYoss Dran ~ Source Braakdonn Voltage | 2NG755. 60 - - v Vgsg 50 ING756 109 = - v tgs 1OmA : YGsith] Gate Threshold Voliage aut | 20 [ = 40 Vv [os* Vos. lp oi mA lassr Gate - Body Leakage Forward AUG = > 100 [nA | Vag + 20 * 7 > "Gssn Gete Body Leakage Reverse aut = = 100" | nA | Vgge-20V--- _ pss Ze10 Gate Voltage Orain Current ALL - ot 10 | mA |} Vog Mam, Rating. Veg 3 0 . . = O27 [40 [mA | Vs = Max. Roving, Vag 0, Tg = 12606 Vosion} Stale Orain Source On-State 26755 - - 30 Vj Vas * 10V, 15 = 127A Voltege , 2Ne756 | - =| 282] v [Vos t0v.ip- 14a Fosion) State Dremn-Source OrrSiete ano7ss | - | a20 | 028 | a | Vgg= 10V, ip = BA Revatence @ 2g7s6 | - | at | 018 | | Vgget0v.tp? Ga Floston} Static mo On-State ane7ss | - ~ | oa: | 8 [vgs + 10V, ty - BA, Te = 128C were | = = [oa | 9 | Vag 10V,1p 9A. Te = 125C ey Forward Trantconductance (9) ALL { 4o* {86 [120] Stu [Vos t8V, Ip aa Cs Input Capacitance ALL 450 600 B00" pF Vg "0, Vg * 25v, f* LOMME Coys Oulnut Capacitance aut [| 150 [ 300 | soo | oF sen Fug. 10 Coss Reverse Transfer Capacitance ALL 50 100 150 pF Sefton) Tumn-On Delsey Tune ALL - - a0* na Voo 2 36V. tp 1 9A, 2, + 159 Rise Time ALL = = 75 me | (See Fuge, 13 aod 14) fata Turn-Olt Daley Teme ALL = = 40 m4 | (MOSFET witching times are essentially 1 Fall Tume ALL vo - ase ts independent of oparating temperatura) Thermal Resistance Aine dunction-te Cae ALL - - vere | oCew FAincs Cate to-Sink ALL - 01 ~ *C/W | Mounting surface ilet, smooth, and greased, Bunga function to-Ambient ALL = = 30 | eCAW | Free Ai Operation Body-Drain Diode Ratings and Characteristics Source Current = = . = = showing the integral reverse BN junction rectifier, tr Reverse = 300 = dlgfdt = JEOEC cegueered values (1) Putts Test Pulse Width 300 usec, Outy Cycle < 2% VARY tg TO OBTAIN REQUIRED PEAK I Vos* ao | Fig. 1 Clamped Inductive Test Circuit Fig. 2 Clamped inductive Waveforms Ey #0 58Vps5 Vo 0 758Vgse Vog* 15 = a Ip, DRAIN CURRENT (AMPERES) Ip, ORAtN CURRENT (AMPERES) as, Tye a 10 a cu 40 w a 2 4 t 19 Vos. DAAIN TO SOURCE VOLTAGE (VOLTSI Vas. GATE 10 SOUACE VOLTAGE (VOLTS) Fig. 3 Typical Output Characteristics Fig. 4 - Typical Transfer Characteristics 328"3875081 G E SOLID STATE O1 DE ff 3a7s0a1 OOL836b 2 i - T-39-11 Standard Power MOSFETS ip, OAAIN CUARENT (AMPERES) tty. TRANSCOMDUCT ANCE (SIEMENS Fig. ws 8 2 a g 3 2 2 = Ze Ss a 5 os g ea Sa < a2 A 2s 3 Fs a z= 4 = v & : ~-f- a _ Vege Vv ty - 9A 40 G an ct] 120 160 Ty, JUNCTION TEMPERATURE (C) Fig. 9Normalized Typical On-Resistance Vs. Temperature Fig. 7 on os w 16 10 Vas, OAAIN TG SOURCE VOLTAGE IVOLTS) Fig. S Typical Saturation Charactaristics (2N6755, ig. ORAIN CURRENT (AMPERES) s 19 it a 6 Ip, OAAIN CURAENT {AMPERES} Typica! Transconductance Vs. Drain Currant ig, ORAtM CUMRENT (AMPERES) 2N6755, 2N6756 q o oe 2 6 20 Vos. QAAIM 70 SOURCE VOLTAGE [VOLTS) * Fig. 6 Typical Saturation Characteristics (2N6756} co) o a ~ o os 4050 10 20 so 100 200 Vos ORAIM TO SOURCE VOLTAGE (VOLTS) Fig. 8 Maximum Safe Operating Area 1200 0 19 Fr) Fr) a 30 Vos, DRAIN TO SOURCE VOLTAGE (VOLTS) 10 Typical Capacitance Vs. Drain-to-Source Voltage 329~ 3875081 G & SOLID STATE Ol Standard Power MOSFETs pe J se750a1 0018387 yo Te39-11 2N6755, 2N6756 w 0 Pp, POWER DISSIPATION IwaTTs) Q an a a 0 100 7000 10 Te, CASE TEMPERATURE (C) Fig. 11 - Power Vs. Temparature Derating Curve Yoo = 4V PAF =ftHe tyttes Yo TO SCOPE Fig. 13 Switching Time Tast Circuit Ig, SOURCE CURRENT (AMPERES) Vso, SOURCE-10 DRAIR VOLTAGE (VOLTS? Fig. 12 Typical Body-Drain Diode Forward Voltage s PULSE WIDTH =| wh S0% 10% INPUT PULSE ~ FALL TiME ry 1% 90% Y6S ton} IHPUT.Y, Vos on INPUT PULSE 'd (on}- E {a (oth Y0S (0th) amr " OUTPUT. Vb (on) = |.tor ba Neff Fig. 14 Switching Time Waveforms