C460XT290-0108-A - Cree, Inc.

G•SiC® Technology

XThin™ LEDs

CxxxXT290-S0100-A

Features Applications

• XThin™ Performance

– 12.0 mW min.

• Thin 115µm Chip

• Low Forward Voltage

– 3.2 Typical at 20mA

• Single Wire Bond Structure

• Class II ESD Rating

• Cellular Phone LCD Backlighting

• Digital Camera Flash For Mobile Appliance

• Mobile Phone Key Pads

◊

White LEDs

Blue LEDs

• Automotive Dashboard Lighting

• LED Video Displays

• Audio Product Display Lighting

Description

Cree's XThin™ LEDs are the next generation of solid state LED emitters that combine highly efficient

InGaN materials with Cree's proprietary G•SiC® substrate to deliver superior price performance for

high intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize

light extraction efficiency, and require only a single wire bond connection. These vertically structured

LED chips are approximately 115 microns in height and require a low forward voltage. Cree's XT chips

are tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD.

Applications for XThin include next generation mobile appliances for use in their LCD backlights and

digital camera flash where brightness, sub-miniaturization, and low power consumption are required.

CxxxXT290-S0100-A Chip Diagram

300 x 300 µm

•SiC® LED Chip

Top Area

200 x 200 µm Cathode (-)

h = 115

µm

Backside

Metallization

210 x 210 µm Anode (+)

InGaN

SiC Substrate

Bottom View Die Cross Section

Junction Area

248 x 248 µm

Bond Pad

105µm Dia.

Top View

CPR3BV Rev.-

G•SiC® Technology

XThin™ LEDs

CxxxXT290-S0100-A

Maximum Ratings at TA = 25°C Notes 1&3 CxxxXT290-S0100-A

DC Forward Current 30mA

Peak Forward Current (1/10 duty cycle @ 1kHz) 100mA

LED Junction Temperature 125°C

Reverse Voltage 5 V

Operating Temperature Range -40°C to +100°C

Storage Temperature Range -40°C to +100°C

Electrostatic Discharge Threshold (HBM) Note 2 1000V

Electrostatic Discharge Classification (MIL-STD-883E) Note 2 Class 2

Typical Electrical/Optical Characteristics at TA = 25°C, If = 20mA Note 3

Part number

Forward Voltage (Vf, V)

Reverse Current

[I(Vr=5V), µA]

Min Typ Max Max

C460XT290-S0100-A 2.7 3.2 3.7 10

C470XT290-S0100-A 2.7 3.2 3.7 10

Mechanical Specifications CxxxXT290-S0100-A

Description Dimension Tolerance

P-N Junction Area (µm) 248 x 248 ± 25

Top Area (µm) 200 x 200 ± 25

Bottom Area (Substrate) (µm) 300 x 300 ± 25

Chip Thickness (µm) 115 ± 15

Au Bond Pad Diameter (µm) 105 -5, +15

Au Bond Pad Thickness (µm) 1.2 ± 0.5

Back Contact Metal Area (µm) 210 x 210 ± 25

Back Contact Metal Thickness (µm) (Au/Sn) Note 4 1.7 ± 0.3

Notes:

1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol

OS4000 epoxy) for characterization. Seller makes no representations regarding ratings for packages other than the T-1

3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G •SiC die but by the effect of

the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package;

junction temperature should be characterized in a specific package to determine limitations. Assembly processing

temperature must not exceed 325°C (< 5 seconds). See Cree XBright Applications Note for more assembly process

information.

2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test

(RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other

assurances regarding the ability of Products to withstand ESD.

3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when

assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents.

Typical values given are the averag e values expected by Seller in large quantities and are provided for information only.

Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps

in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.

4) Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282°C. See

XBright Applications Note for detailed packaging recommendations.

5) Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the

side of the chip. See Cree XBright Applications Note for more information.

CPR3BV Rev.-

G•SiC® Technology

XThin™ LEDs

CxxxXT290-S0100-A

Standard Bins for XT290:

All LED chips are sorted onto die sheets according to the bins shown below. All radiant flux and all

dominant wavelength values shown and specified are at If = 20mA.

C460XT290-S0100-A

C470XT290-S0100-A

C460XT290-0108-A

C470XT290-0108-A

C460XT290-0103-A

C460XT290-0105-A C460XT290-0106-A C460XT290-0107-A

C470XT290-0106-A C470XT290-0107-A

C460XT290-0101-A Sorted Die Kits may contain any or all

ins shown to the left.

C460XT290-0104-A

470nm 472.5nm

Dominant Wavelength 462.5nm

C470XT290-0102-A C470XT290-0103-A C470XT290-0104-A

457.5nm

C460XT290-0102-A

460nm

15.0mW

12.0mW

455nm

Radiant FluxRadiant Flux

15.0mW

12.0mW

465nm

C470XT290-0101-A

C470XT290-0105-A

467.5nm

465nm

Sort ed Die Kits may cont ai n any or all

ins shown to the left.

Dominant Wavelength 475nm

CPR3BV Rev.-

G•SiC® Technology

XThin™ LEDs

CxxxXT290-S0100-A

Characteristic Curves:

These are representative measurements for the XThin product. Actual curves will vary slightly for the

various radiant flux and dominant wavelength bins.

Forward Current vs. Forwa rd V olt age

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Vf (V)

If (mA)

Wavelength Shift vs Forward Current

-2.0

0.0

2.0

4.0

6.0

8.0

10.0

0 5 10 15 20 25 30

If(mA)

Shift (nm)

Relative Intensity vs Forward Current

100

120

140

0 5 10 15 20 25 30

If(mA)

% Intensity

Relative Intensity vs Peak Wa velength

Relative Intensity (%)

Wavelength (nm)

400 500 600

100