G*SiC(R) Technology XThinTM LEDs CxxxXT290-S0100-A Features * Applications XThinTM Performance - 12.0 mW min. * Thin 115m Chip * Low Forward Voltage - * Cellular Phone LCD Backlighting * Digital Camera Flash For Mobile Appliance * Mobile Phone Key Pads 3.2 Typical at 20mA White LEDs Blue LEDs * Single Wire Bond Structure * Automotive Dashboard Lighting * Class II ESD Rating * LED Video Displays * Audio Product Display Lighting Description Cree's XThinTM LEDs are the next generation of solid state LED emitters that combine highly efficient InGaN materials with Cree's proprietary G*SiC(R) substrate to deliver superior price performance for high intensity LEDs. These LED chips have a geometrically enhanced Epi-down design to maximize light extraction efficiency, and require only a single wire bond connection. These vertically structured LED chips are approximately 115 microns in height and require a low forward voltage. Cree's XT chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V ESD. Applications for XThin include next generation mobile appliances for use in their LCD backlights and digital camera flash where brightness, sub-miniaturization, and low power consumption are required. CxxxXT290-S0100-A Chip Diagram Top View Bottom View G * SiC(R) LED Chip 300 x 300 m Top Area 200 x 200 m Bond Pad 105m Dia. CPR3BV Rev.(c) Cree, Inc. 2003 All Rights Reserved Die Cross Section Junction Area 248 x 248 m Cathode (-) Backside Metallization 210 x 210 m SiC Substrate h = 115 m InGaN Anode (+) G*SiC(R) Technology XThinTM LEDs CxxxXT290-S0100-A Maximum Ratings at TA = 25C Notes 1&3 DC Forward Current Peak Forward Current (1/10 duty cycle @ 1kHz) LED Junction Temperature Reverse Voltage Operating Temperature Range Storage Temperature Range Electrostatic Discharge Threshold (HBM) Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Note 2 CxxxXT290-S0100-A 30mA 100mA 125C 5V -40C to +100C -40C to +100C 1000V Class 2 Typical Electrical/Optical Characteristics at TA = 25C, If = 20mA Note 3 Part number Forward Voltage (Vf, V) Reverse Current [I(Vr=5V), A] Min Typ Max Max C460XT290-S0100-A 2.7 3.2 3.7 10 C470XT290-S0100-A 2.7 3.2 3.7 10 Mechanical Specifications Description P-N Junction Area (m) Top Area (m) Bottom Area (Substrate) (m) Chip Thickness (m) Au Bond Pad Diameter (m) Au Bond Pad Thickness (m) Back Contact Metal Area (m) Back Contact Metal Thickness (m) (Au/Sn) Note 4 CxxxXT290-S0100-A Dimension 248 x 248 200 x 200 300 x 300 115 105 1.2 210 x 210 1.7 Tolerance 25 25 25 15 -5, +15 0.5 25 0.3 Notes: 1) Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy) for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller. The forward currents (DC and Peak) are not limited by the G *SiC die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125C is a limit of the T-1 3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325C (< 5 seconds). See Cree XBright Applications Note for more assembly process information. 2) Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding the ability of Products to withstand ESD. 3) All Products conform to the listed minimum and maximum specifications for electrical and optical characteristics, when assembled and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances Products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E. 4) Back contact metal is 80%/20% Au/Sn by weight, with target eutectic melting temperature of approximately 282C. See XBright Applications Note for detailed packaging recommendations. 5) Caution: To avoid leakage currents and achieve maximum output efficiency, die attach material must not contact the side of the chip. See Cree XBright Applications Note for more information. CPR3BV Rev.(c) Cree, Inc. 2003 All Rights Reserved G*SiC(R) Technology XThinTM LEDs CxxxXT290-S0100-A Standard Bins for XT290: Radiant Flux All LED chips are sorted onto die sheets according to the bins shown below. All radiant flux and all dominant wavelength values shown and specified are at If = 20mA. C460XT290-0105-A C460XT290-0106-A C460XT290-0107-A C460XT290-0108-A C460XT290-S0100-A C460XT290-0101-A C460XT290-0102-A C460XT290-0103-A C460XT290-0104-A Sorted Die Kits may contain any or all bins shown to the left. 15.0mW 12.0mW Radiant Flux 455nm 457.5nm 460nm Dominant Wavelength 462.5nm 465nm C470XT290-0105-A C470XT290-0106-A C470XT290-0107-A C470XT290-0108-A C470XT290-S0100-A C470XT290-0101-A C470XT290-0102-A C470XT290-0103-A C470XT290-0104-A Sorted Die Kits may contain any or all bins shown to the left. 15.0mW 12.0mW 465nm 467.5nm CPR3BV Rev.(c) Cree, Inc. 2003 All Rights Reserved 470nm Dominant Wavelength 472.5nm 475nm G*SiC(R) Technology XThinTM LEDs CxxxXT290-S0100-A Characteristic Curves: These are representative measurements for the XThin product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. Wavelength Shift vs Forward Current 30 10.0 25 8.0 20 6.0 Shift (nm) If (mA) Forward Current vs. Forward Voltage 15 4.0 10 2.0 5 0.0 0 -2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 Vf (V) 10 15 20 25 If(mA) Relative Intensity vs Forward Current Relative Intensity vs Peak Wavelength 100 140 120 80 Relative Intensity (%) % Intensity 100 80 60 60 40 40 20 20 0 0 5 10 15 If(mA) CPR3BV Rev.(c) Cree, Inc. 2003 All Rights Reserved 20 25 30 400 500 W avelength (nm) 600 30