4-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
FSL110D, FSL110R UNITS
Drain to Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DS 100 V
Drain to Gate Voltage (RGS = 20kΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 100 V
Continuous Drain Current
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID3.5 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID2.5 A
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM 10.5 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS ±20 V
Maximum Power Dissipation
TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT15 W
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT6W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.12 W/oC
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS 10.5 A
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IS3.5 A
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 10.5 A
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 100 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS,
ID = 1mA TC = -55oC - - 5.0 V
TC = 25oC 1.5 - 4.0 V
TC = 125oC 0.5 - - V
Zero Gate Voltage Drain Current IDSS VDS = 80V,
VGS = 0V TC = 25oC--25µA
TC = 125oC - - 250 µA
Gate to Source Leakage Current IGSS VGS = ±20V TC = 25oC - - 100 nA
TC = 125oC - 200 nA
Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 3.5A - 2.21 V
Drain to Source On Resistance rDS(ON)12 ID = 2.5A,
VGS = 12V TC = 25oC - 0.520 0.600 Ω
TC = 125oC - - 0.960 Ω
Turn-On Delay Time td(ON) VDD = 50V, ID = 3.5A,
RL = 14.3Ω, VGS 12V,
RGS = 7.5Ω
- - 30 ns
Rise Time tr- - 60 ns
Turn-Off Delay Time td(OFF) - - 30 ns
Fall Time tf- - 55 ns
Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 50V,
ID = 3.5A - - 15 nC
Gate Charge at 12V Qg(12) VGS = 0V to 12V - 7.6 8.5 nC
Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - 0.62 nC
Gate Charge Source Qgs - 2.2 2.8 nC
Gate Charge Drain Qgd - 4.3 4.9 nC
Plateau Voltage V(PLATEAU) ID = 3.5A, VDS = 15V - 8 - V
Input Capacitance CISS VDS = 25V, VGS = 0V,
f = 1MHz - 155 - pF
Output Capacitance COSS -70-pF
Reverse Transfer Capacitance CRSS -20-pF
Thermal Resistance Junction to Case RθJC - - 8.3 oC/W
Thermal Resistance Junction to Ambient RθJA - - 175 oC/W
FSL110D, FSL110R