SAMSUNG ELECTRONICS INC IRFRO20/22/24/25 IRFU020/22/24/25 BYE D MM 7964142 0012320 307 MSMGK N-CHANNEL POWER MOSFETS FEATURES Lower Rps (on) Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability PRODUCT SUMMARY D-PACK IRFRO20/012 IRFRO24/025 I-PACK Part Number Vos Ros(on) lo IRFRO20/U020 50V 0100 15A IRFRO22/U022 50V 0.120 14A IRFRO24/U024 60V 0100 15A IRFU020/012 IRFRO25/U025 60V 0.120 14A IRFU024/025 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRFRO2O | IRFRO22 | IRFRO24 | IRFRO25 Unit IRFUO20 | IRFUO22 | IRFU024 | IRFU025 Drain-Source Voltage (1) Voss 50 60 Vde Drain-Gate Voltage (Ras=1.0M0Q)(1) Vocr 50 60 Vde Gate-Source Voltage Ves +20 Vdc Continuous Drain Current Tc=25C Ib 15 14 15 14 Adc Continuous Drain Current Tc=100C Ib 9.6 87 9.6 8.7 Adc Drain CurrentPulsed (3) lpm 60 56 60 56 Adc Gate CurrentPulsed lam #1.5 Adc Single Pulsed Avalance Energy (4) Eas 95 mJ Avalanche Current las 16 A | Total Power Dissipation at Tc=25C Po 42 Watts Derate above 25C 0.33 W/C Operating and Storage _ Junction Temperature Range Ty, Tstg 58 to 150 c Maximum Lead Temp. for Soldering T 300 C Purposes, 1/8" from case for 5 seconds L Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300us, Duty Cycle<2% (3) Repetitive rating: Pulse with limited by max junction temperature (4) L=100pH, Vag=25V, Rg=250), Starting T3=25C 285 em ELECTRONICSSAMSUNG ELECTRONICS INC b4YE D MM 7964L42 0012321 243 MESNGK IRFRO20/22/24/25 N-CHANNEL ELECTRICAL CHARACTERISTICS (1=25C uniess otherwise specified) Symbol Characteristic Min| Typ | Max |Units Test Conditions Drain-Source Breakdown Voltage BVpss | IRFRO24/025, IRFU024/025 60 | - Ve | Ves=0OV, Ip=250pA IRFRO20/022, IRFU020/022 50| - Vv Vesin) | Gate Threshold Voltage 2.0) 4.0 Vs| Vps=Ves, Ilp=250pnA less | Gate-Source Leakage Forward | | 100 | nA | Ves=20V less | Gate-Source Leakage Reverse | |-100] nA | Vas=-20V lnss_| Zero Gate Voltage Drain Current | | 250 | wA | Vos=Max. Rating, Ves=OV | |1000 Vos=0.8 Max Riting, Ves=OV, T,=125C Injen) | On-State Drain-Source Current (2) Vps21.8V, Ves=10V IRFRO20/024, IRFU020/024 15) - A IRFRO22/025, IRFU022/025 14], - Rosjon) | Static Drain-Source IRFRO20/024, IRFU020/024 |0.08/ 0.10 | 0 | Ves=10V, Ip=8.7A IRFRO22/025, IRFU022/025 } 4,012; a Ots Forward Transconductance (2) 3.6/ - U_ | Vos250V, Ilp=8.7A Ciss | Input Capacitance |635/ pF | Ves=OV Coss | Output Capacitance |}218) pF | Vos=25V Crsgs_| Reverse Transfer Capacitance |}105; pF | f=1.0MHz t Turn-On Delay Time |7.3]; ns 2-2 ese Vo0=0.5 BVpss, In=15A, Zo= 1801 tr Rise Time |17.8| | ns | (MOSFET switching times are essentially tao) | Turn-Off Delay Time |20.4; ns_ | independent of operating temperature) tr Fall Time |14.5) ns Total Gate Charge |38.5/ Qe (Gate-Source Pius Gate-Drain) nc Ves=10V, Ilp=15A, Vps=0.8Max. Rating Qgs_ | Gate-Source Charge |a.75| nc (Gate charge is essentially independent of operating temperature.) Qga | Gate-Drain (Miller) Charge {17.8) nc THERMAL RESISTANCE Rinc Junction-to-Case MAX 3.0 K/W Rincs Case-to-Sink TYP 1.7 K/W | Mounting surface fiat smooth, and greased Rina Junction-to-Ambient MAX 110 K/W | Free Air Operation Notes: (1) Ty=25C to 150C (2) Pulse test: Pulse width<300ys, Duty Cycle<2% (3) Repetitive rating: Pulse width limited by max. junction temperature ELECTRONICSSAMSUNG ELECTRONICS INC BYE D MM 7964142 0012322 18T MBSMGK IRFRO20/22/24/25 P-CHANNEL ' SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic Min| Typ | Max |Units Test Conditions Continuous Source Current Modified MOSFET D Is -{t- 16 A (Body Diode) integral reverse ~ Se ae -f- 4 . G ism | Pulse Source Current (3) } | 60 | a | P-Niuncton rectifier Sf Vsp | Diode Forward Voltage -|j- 14 v Tc =25C, Is=15A,. Ves=O0V pe ar es tre Reverse Recovery Time | | 310 | ns T)=25C, IF=15A, diedt=100A' nS Notes: (1) Ty=25C to 150C (2) Pulse test Pulse width<300us, Duty Cycle<2% (3) Repetitive rating Pulse with limited by max junction temperature rT T T bol 8] % Lov To | T gous Pulse Test ro t fob bor Ll \ Ma = | ' _ Aor ' 1 g wi x a Ww Ss a < = ~ 4 = 30 z - w z ae w ec ec | oc 8 3 z z 20 5 Fs s 7 a} + 10 ~ | 4 4 | Ven = av : 8 10 20 30 40 50 60 2 4 6 8 70 12 74 Vos ORAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. GATE-TO-SOURCE VOLTAGE (VOLTS) Typical Output Characteristics Typical Transfer Characteristics D 7 v T qT T 100 . 2 ETT YS + + to y PT rrie.y BOys Pulse Test 10V ov I IRFROZO Ltt : ns toa 4 Lo Of. fo... oP ESTsS Ri SsTEsesRS J _ av 02. g \ N Toes a 6 ' @ : . Y ~ NA hoo,s iw IRFRO20 | a ; : | = RFRO22 y 3 ry zp Sa 4 $ = - Nios J ~ 12) e OF ims z ne ae Dobe = : 71 OPERATION IN THIS AREA . pod = f 'SLUMITED BY A l > o Yors : , , : z 4 z & Ve, =6V 2 < B31 of q 5 So s at 4 * f ; tae OSE edetG eee 7 4 5V o an am Ty=150'C a a : Single Pulse **' y I t 01 jt 1 9 2 3 5 ot 05 10 5 10 30100 Vos DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos. DRAIN-TO-SOURCE VOLTAGE (VOLTS) Typical Saturation Characteristics Maximum Safe Operating Area 287 ELECTRONICSSAMSUNG ELECTRONICS INC BYE D MM 7964142 0012323 O1b MBSNGK IRFRO20/22/24/25 N-CHANNEL IRFU020/22/24/25 POWER MOSFETS o a o 1 uty Factor Date o 1 2 Per Unit Base=Rex,=1 67 Deg CW 3 Ta Te = Pow Ziuc ( ZmnscavRinsc, NORMALIZED EFFECTIVE TRANSIENT THERMAL IMPEDANCE {PER UNIT) oO oo 10 5 2 5 107 2 5 10" 2 5 1 2 ti SQUARE WAVE PULSE DURATION (SECONDS} Maximum Effective Transient Thermal Impedance Junction- to-Case Vs. Pulse Duration 10% 2 ipa, REVERSE DRAIN CURRENT (AMPERES) Grs, TRANSCONDUCTANCE (SIEMENS) tp DRAIN CURRENT (AMPERES) Vso, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Typical Transcounductance Vs. Drain Current Typical Source-Drain Diode Forward Voltage 115 24 {NORMALIZED) 085 BVpss. DRAIN-TO-SOURCE BREAKDOWN VOLTAGE Rosion), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) Qo 75 -75 -50 -25 0 26 S50 7 Ty, JUNCTION TEMPERATURE (C) Ty, JUNCTION TEMPERATURE (C) Breakdown Voltage Vs. Temperature Normalized On-Resistance Vs. Temperature : ELECTRONICSSAMSUNG ELECTRONICS INC BYE D MM 79641442 9012324 TS2 MSMGK IRFRO20/22/24/25 N-CHANNEL IRFU020/22/24/25 POWER MOSFETS Vas=0V f= 1MHz Cus=Cgs+Cgd. Cds Cou=cga | | _ Cas Cgd 1 Coss=Cds + gs+Cod =Cds + Cgd bone C, CAPACITANCE (pF) Vos, GATE-TO-SOURCE VOLTAGE (VOLTS) Vps, DRAIN-TO-SOURCE VOLTAGE (VOLTS) ; Qg, TOTAL GATE CHARGE (nC) Typical Capacitance Vs. Drain to Source Voltage Typical Gate Charge Vs. Gate-To-Source Voltage IRFRO22/25 Ros ton DRAIN-TO-SOURCE ON RESISTANCE (OHMS) Ip, DRAIN CURRENT (AMPERES) 1 Ip, DRAIN CURRENT (AMPERES) Ta, AMBIENT TEMPERATURE (C} Typical On-Resistance Vs. Drain Current Maximum Drain Current Vs. Case Temperature 150 Pp, POWER DISSIPATION (WATTS) Tc, CASE TEMPERATURE (C) Power Vs. Temperature Derating Curve ELECTRONICS